Phitips Semiconductors Product specification eee e renee renner ee ee anes General purpose controlled avalanche paca. (double) diodes BAS29; BAS31; BAS35 FEATURES PINNING Small plastic SMD package PIN DESCRIPTION Switching speed: max. 50 ns BAS29 BAS31 BAS35 General application 1 anode anode cathode (k1) Continuous reverse voltage: 2 not connected cathode cathode (k2) max. 90 V - a 3 cathode common connection | common anode Repetitive peak reverse voltage: max. 110 V Repetitive peak forward current: max. 600 mA Repetitive peak reverse current: max. 600 mA. APPLICATIONS * General purpose switching in e.g. 2 4 1 surface mounted circuits. I = 3 DESCRIPTION |__| General purpose switching diodes fabricated in planar technology, and a. Simplified outline. . BAS31 diode. encapsulated in smail rectangular plastic SMD SOT23 packages. : . n 2 The BAS29 consists of a single diode. 2 ie 1 2 ~(i->)- 1 The BAS31 has two diodes in series. The BAS35 has two diodes with a 3 common anode. 3 3 b. BAS29 diode. d. BAS35 diode. MAM233 MARKING MARKING TYPE NUMBER CODE BAS29 L20 1 L21 BASS Fig.1 Simplified outline (SOT23) and symbols. BAS35 L22 1996 Sep 10 1-119Philips Semiconductors Product specification General purpose controlled avalanche (double) diodes BAS29; BAS31 ; BAS35 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL | PARAMETER CONDITIONS | MIN. | MAX. UNIT Per diode VarM repetitive peak reverse voltage - 110 Vv Va continuous reverse voltage ~ 90 Vv Ir continuous forward current single diode loaded; see Fig.2; - 250 mA note 1 double diode loaded; see Fig.2; - 150 mA note t lerm repetitive peak forward current - 600 mA lesm non-repetitive peak forward current | square wave; Tj = 25 C prior to surge; see Fig.4 t=1ps - 10 A t= 100 us - 4 A t=1s - 0.75 1A Prot total power dissipation Tamb = 25 C; note 1 - 250 mw lnpM repetitive peak reverse current - 600 mA Eram repetitive peak reverse energy tp 2 50 ts; f < 20 Hz; Tj = 25 C - 5.0 | mJ Tetg storage temperature ~65 +150 C Tj junction temperature - 150 67C Note 1. Device mounted:on an FR4 printed-circuit board. 1996 Sep 10Philips Semiconductors Product specification General purpose controlled avalanche (double) diodes BAS29: BAS31; BAS35 ELECTRICAL CHARACTERISTICS T; = 25 C; unless otherwise specified. SYMBOL | PARAMETER CONDITIONS | MIN, | MAX. | UNIT Per diode Ve forward voltage see Fig.3 ip =10mA - 750 mV le = 50 mA - 840 mV le = 100 mA - 900 mV I- = 200 mA - 10 |V Ip = 400 mA - 1.25 |V Im reverse current see Fig.5 VR =90V - 100 nA Vr = 90 V; Tj = 150C - 100 pA Vier)R reverse avalanche breakdown Ip= 1 mA 120 170 Vv voltage Cy diode capacitance f= 1 MHz; Vp = 0; see Fig.6 - 35 pF try reverse recovery time when switched from |; = 30 mA to - 50 ns Ip = 30 mA; R, = 100; measured at I; = 3 mA; see Fig.7 THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE | UNIT Rth j-tp thermal resistance from junction to tie-point 360 KW Rin j-a thermal resistance from junction to ambient | note 1 500 KAW Note 1. Device mounted on an FR4 printed-circuit board. 1996 Sep 10 1-121Philips Semiconductors Product specification General purpose controlled avalanche . BAS29; BAS31; BAS35 (double) diodes , , GRAPHICAL DATA 300 600 ir iF (mA) (mA) 200 400 100 200 0 0 Q 160 Tamb (C) 200 0 1 VE) 2 Device mounted on an FR4 printed-circuit board. (1) T= 150 C; typical values. (1) Single diode loaded. (2) T; = 25 C; typical values. (2) Double diode loaded. (3) T= 25 C; maximum vatues. Fig.2 Maximum permissible continuous forward Fig.3 Forward current as a function of current as a function of ambient temperature. forward voltage. 102 MBH327 IFSM (A) 10 1 to? 2 3 4 1 10 10 10 tp (us) 10 Based on square wave currents. Tj = 25 C prior to surge. Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration. 1996 Sep 10 1-122Philips Semiconductors Product specification General purpose controlled avalanche _ (double) diodes BAS29; BAS31; BAS35 102 ly (HA) 10-1 10-2 9 100 T, Cc) 200 (1) Vp = 90 V; maximum vatues. (2) Vp = 90 V; typical values. Fig.5 Reverse current as a function of junction temperature. VR WV) f= 1 MHz; Tj = 25C. Fig.6 Diode capacitance as a function of reverse voltage; typical values. { = 50 t Rg=500 L J SAMPLING TT TTT OSCILLOSCOPE VaVatipxRg R= 50 0 : MGAgBT (1) Ig=3mA. t tle ter t fo ) input signal output signal Fig.7 Reverse recovery voltage test circuit and waveforms. 1996 Sep 10 1-123