PROFET® BTS410E2
Data Sheet 1 2013-10-15
Smart High-Side Power Switch
Features
Overload protection
Current limitation
Short circuit protection
Thermal shutdown
Overvoltage protection (including load dump)
Fast demagnetization of inductive loads
Reverse battery protection
1
)
Undervoltage and overvoltage shutdown with
auto-restart and hysteresis
Open drain diagnostic output
Open load detection in ON-state
CMOS compatible input
Loss of ground and loss of Vbb protection
Electrostatic discharge (ESD) protection
Green Product (RoHS compliant)
AEC Qualified
Application
C compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads
All types of resistive, inductive and capacitve loads
Replaces electromechanical relays, fuses and discrete circuits
General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic
feedback, monolithically integrated in Smart SIPMOS
technology. Providing embedded protective functions.
1
) With external current limit (e.g. resistor RGND=150 ) in GND connection, resistors in series with IN and ST
connections, reverse load current limited by connected load.
Product Summary
Overvoltage protection
Vbb(AZ)
65
V
Operating voltage
Vbb(on)
4.7 ... 42
V
On-state resistance
RON
220
m
Load current (ISO)
IL(ISO)
1.8
A
Current limitation
IL(SCr)
5
A
+ V
bb
IN
ST
Signal GND
ESD
PROFET
OUT
GND
Logic
Voltage
sensor
Voltage
source
Open load
detection
Short circuit
detection
Charge pump
Level shifter
Temperature
sensor
Rectifier
Limit for
unclamped
ind. loads
Gate
protection
Current
limit
2
4
1
3
5
Load GND
Load
V
Logic
Overvoltage
protection
BTS410E2
Data Sheet 2 2013-10-15
Pin
Symbol
Function
1
GND
-
Logic ground
2
IN
I
Input, activates the power switch in case of logical high signal
3
Vbb
+
Positive power supply voltage,
the tab is shorted to this pin
4
ST
S
Diagnostic feedback, low on failure
5
OUT
(Load, L)
O
Output to the load
Maximum Ratings at Tj = 25 °C unless otherwise specified
Parameter
Symbol
Values
Unit
Supply voltage (overvoltage protection see page 3)
Vbb
65
V
Load dump protection2) VLoadDump = UA + Vs, UA = 13.5 V
RI3)= 2 , RL= 6.6 , td= 400 ms, IN= low or high
VLoad dump4)
100
V
Load current (Short circuit current, see page 4)
IL
self-limited
A
Operating temperature range
Storage temperature range
Tj
Tstg
-40 ...+150
-55 ...+150
°C
Power dissipation (DC), TC 25 °C
Ptot
50
W
Inductive load switch-off energy dissipation, single pulse
Vbb = 12V, Tj,start = 150°C, TC = 150°C const.
IL = 1.8 A, ZL = 2.3 H, 0 :
EAS
4.5
J
Electrostatic discharge capability (ESD) IN:
(Human Body Model) all other pins:
acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993
VESD
1
2
kV
Input voltage (DC)
VIN
-0.5 ... +6
V
Current through input pin (DC)
Current through status pin (DC)
see internal circuit diagrams page 6
IIN
IST
5.0
5.0
mA
Thermal Characteristics
Parameter and Conditions
Symbol
Values
Unit
min
typ
max
Thermal resistance chip - case:
junction - ambient (free air):
RthJC
RthJA
--
--
--
--
2.5
75
K/W
SMD version, device on PCB5):
--
35
--
2
) Supply voltages higher than Vbb(AZ) require an external current limit for the GND and status pins, e.g. with a
150 resistor in the GND connection and a 15 k resistor in series with the status pin. A resistor for the
protection of the input is integrated.
3
) RI = internal resistance of the load dump test pulse generator
4
) VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
5
) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70m thick) copper area for Vbb
connection. PCB is vertical without blown air.
BTS410E2
Data Sheet 3 2013-10-15
Electrical Characteristics
Parameter and Conditions
Symbol
Values
Unit
at Tj = 25 °C, Vbb = 12 V unless otherwise specified
min
typ
max
Load Switching Capabilities and Characteristics
On-state resistance (pin 3 to 5)
IL = 1.6 A Tj=25 °C:
Tj=150 °C:
RON
--
190
390
220
440
m
Nominal load current, ISO Norm (pin 3 to 5)
VON = 0.5 V, TC = 85 °C
IL(ISO)
1.6
1.8
--
A
Output current (pin 5) while GND disconnected or
GND pulled up, Vbb=30 V, VIN= 0, see diagram
page 7, Tj =-40...+150°C
IL(GNDhigh)
--
--
1
mA
Turn-on time IN to 90% VOUT:
Turn-off time IN to 10% VOUT:
RL = 12 , Tj =-40...+150°C
ton
toff
12
5
--
--
125
85
s
Slew rate on
10 to 30% VOUT, RL = 12 , Tj =-40...+150°C
dV /dton
--
--
3
V/s
Slew rate off
70 to 40% VOUT, RL = 12 , Tj =-40...+150°C
-dV/dtoff
--
--
6
V/s
Operating Parameters
Operating voltage 6) Tj =-40...+150°C:
Vbb(on)
4.7
--
42
V
Undervoltage shutdown Tj =25°C:
Tj =-40...+150°C:
Vbb(under)
2.9
2.7
--
--
4.5
4.7
V
Undervoltage restart Tj =-40...+150°C:
Vbb(u rst)
--
--
4.9
V
Undervoltage restart of charge pump
see diagram page 13
Vbb(ucp)
--
5.6
6.0
V
Undervoltage hysteresis
Vbb(under) = Vbb(u rst) - Vbb(under)
Vbb(under)
--
0.1
--
V
Overvoltage shutdown Tj =-40...+150°C:
Vbb(over)
42
--
52
V
Overvoltage restart Tj =-40...+150°C:
Vbb(o rst)
40
--
--
V
Overvoltage hysteresis Tj =-40...+150°C:
Vbb(over)
--
0.1
--
V
Overvoltage protection7) Tj =-40...+150°C:
Ibb=4 mA
Vbb(AZ)
65
70
--
V
Standby current (pin 3) Tj=-40...+25°C:
VIN=0 Tj= 150°C:
Ibb(off)
--
--
10
18
15
25
A
Leakage output current (included in Ibb(off))
VIN=0
IL(off)
--
--
20
A
6
) At supply voltage increase up to Vbb= 5.6 V typ without charge pump, VOUT Vbb - 2 V
7
) Meassured without load. See also VON(CL) in table of protection functions and circuit diagram page 7.
BTS410E2
Parameter and Conditions
Symbol
Values
Unit
at Tj = 25 °C, Vbb = 12 V unless otherwise specified
min
typ
max
Data Sheet 4 2013-10-15
Operating current (Pin 1)8), VIN=5 V,
Tj =-40...+150°C
IGND
--
1
2.1
mA
Protection Functions
9
)
Initial peak short circuit current limit (pin 3 to 5)10),
( max 450 s if VON > VON(SC) )
IL(SCp)
Tj =-40°C:
Tj =25°C:
Tj =+150°C:
9
--
4
--
12
--
23
--
15
A
Repetitive overload shutdown current limit
IL(SCr)
VON= 8 V, Tj = Tjt (see timing diagrams, page 11)
--
5
--
A
Short circuit shutdown delay after input pos. slope
VON > VON(SC), Tj =-40..+150°C:
min value valid only, if input "low" time exceeds 60 s
td(SC)
--
--
450
s
Output clamp (inductive load switch off)
at VOUT = Vbb - VON(CL) IL= 40 mA, Tj =-40..+150°C:
VON(CL)
61
68
73
V
IL= 1 A, Tj =-40..+150°C:
--
--
75
Short circuit shutdown detection voltage
(pin 3 to 5)
VON(SC)
--
8.5
--
V
Thermal overload trip temperature
Tjt
150
--
--
°C
Thermal hysteresis
Tjt
--
10
--
K
Reverse battery (pin 3 to 1) 11)
-Vbb
--
--
32
V
Diagnostic Characteristics
Open load detection current
(on-condition) Tj=-40 ..150°C:
IL (OL)
2
--
150
mA
8
) Add IST, if IST > 0, add IIN, if VIN>5.5 V
9
) Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not
designed for continuous repetitive operation.
10
) Short circuit current limit for max. duration of td(SC) max=450 s, prior to shutdown
11
) Requires 150 resistor in GND connection. The reverse load current through the intrinsic drain-source
diode has to be limited by the connected load. Note that the power dissipation is higher compared to normal
operating conditions due to the voltage drop across the intrinsic drain-source diode. The temperature
protection is not active during reverse current operation! Input and Status currents have to be limited (see
max. ratings page 2 and circuit page 7).
BTS410E2
Parameter and Conditions
Symbol
Values
Unit
at Tj = 25 °C, Vbb = 12 V unless otherwise specified
min
typ
max
Data Sheet 5 2013-10-15
Input and Status Feedback12)
Input turn-on threshold voltage Tj =-40..+150°C:
VIN(T+)
1.5
--
2.4
V
Input turn-off threshold voltage Tj =-40..+150°C:
VIN(T-)
1.0
--
--
V
Input threshold hysteresis
VIN(T)
--
0.5
--
V
Off state input current (pin 2), VIN = 0.4 V
IIN(off)
1
--
30
A
On state input current (pin 2), VIN = 5 V
IIN(on)
10
25
70
A
Status invalid after positive input slope
(short circuit) Tj=-40 ... +150°C:
td(ST SC)
--
--
450
s
Status invalid after positive input slope
(open load) Tj=-40 ... +150°C:
td(ST)
300
--
1400
s
Status output (open drain)
Zener limit voltage Tj =-40...+150°C, IST = +50 uA:
ST low voltage Tj =-40...+150°C, IST = +1.6 mA:
VST(high)
VST(low)
5.0
--
6
--
--
0.4
V
12
) If a ground resistor RGND is used, add the voltage drop across this resistor.
BTS410E2
Data Sheet 6 2013-10-15
Truth Table
Input-
Output
Status
level
level
412
B2
410
D2
410
E2/F2
410
G2
410
H2
Normal
operation
L
H
L
H
H
H
H
H
H
H
H
H
H
H
Open load
L
H
13)
H
L
H
H
L
H
L
H
L
L
H
Short circuit
to GND
L
H
L
L
H
L
H
L
H
L
H
H
H
L
Short circuit
to Vbb
L
H
H
H
L
H
H
H (L14))
H
H (L14))
H
H (L14))
L
H
Overtem-
perature
L
H
L
L
L
L
L
L
L
L
L
L
L
L
Under-
voltage
L
H
L
L
L15)
L15)
L15)
L15)
H
H
H
H
H
H
Overvoltage
L
H
L
L
L
L
L
L
H
H
H
H
H
H
L = "Low" Level X = don't care Z = high impedance, potential depends on external circuit
H = "High" Level Status signal after the time delay shown in the diagrams (see fig 5. page 12...13)
13
) Power Transistor off, high impedance, versions BTS 410H, BTS 412B: internal pull up current source for
open load detection.
14
) Low resistance short Vbb to output may be detected in ON-state by the no-load-detection
15
) No current sink capability during undervoltage shutdown
Terms
PROFET
V
IN
ST
OUT
GND
bb
VST
VIN
IST
IIN
Vbb
Ibb
IL
VOUT
IGND
VON
1
2
4
3
5
RGND
Input circuit (ESD protection)
IN
GND
I
R
ZD ZD I
I
I1 I2
ESD-
ZDI1 6 V typ., ESD zener diodes are not to be used as
voltage clamp at DC conditions. Operation in this mode
may result in a drift of the zener voltage (increase of up
to 1 V).
Status output
ST
GND
ESD-
ZD
+5V
RST(ON)
ESD-Zener diode: 6 V typ., max 5 mA;
RST(ON) < 250 at 1.6 mA, ESD zener diodes are not
to be used as voltage clamp at DC conditions.
Operation in this mode may result in a drift of the zener
voltage (increase of up to 1 V).
BTS410E2
Data Sheet 7 2013-10-15
Short circuit detection
Fault Condition: VON > 8.5 V typ.; IN high
Short circuit
detection
Logic
unit
+ Vbb
OUT
VON
Inductive and overvoltage output clamp
+ Vbb
OUT
GND PROFET
VZ
VON
VON clamped to 68 V typ.
Overvolt. and reverse batt. protection
+ Vbb
IN
ST
ST
R
IN
R
GND
GND
R
Signal GND
Logic
PROFET
VZ2
VZ1
VZ1 = 6.2 V typ., VZ2 = 70 V typ., RGND= 150 , RIN,
RST= 15 k
Open-load detection
ON-state diagnostic condition: VON < RON * IL(OL); IN
high
Open load
detection
Logic
unit
+ Vbb
OUT
ON VON
GND disconnect
PROFET
V
IN
ST
OUT
GND
bb
Vbb 1
2
4
3
5
VIN VST VGND
Any kind of load. In case of Input=high is VOUT VIN - VIN(T+) .
Due to VGND >0, no VST = low signal available.
GND disconnect with GND pull up
PROFET
V
IN
ST
OUT
GND
bb
Vbb
1
2
4
3
5
VGND
VIN VST
Any kind of load. If VGND > VIN - VIN(T+) device stays off
Due to VGND >0, no VST = low signal available.
BTS410E2
Data Sheet 8 2013-10-15
Vbb disconnect with energized inductive
load
PROFET
V
IN
ST
OUT
GND
bb
Vbb
1
2
4
3
5
high
Normal load current can be handled by the PROFET
itself.
Vbb disconnect with charged external
inductive load
PROFET
V
IN
ST
OUT
GND
bb
1
2
4
3
5
Vbb
high
S
D
If other external inductive loads L are connected to the PROFET,
additional elements like D are necessary.
Inductive Load switch-off energy
dissipation
PROFET
V
IN
ST
OUT
GND
bb
=
E
E
E
EAS
bb
L
R
ELoad
L
RL
{ZL
Energy stored in load inductance:
EL = 1/2·L·I2
L
While demagnetizing load inductance, the energy
dissipated in PROFET is
EAS= Ebb + EL - ER= VON(CL)·iL(t) dt,
with an approximate solution for RL 0 :
EAS= IL· L
2·RL·(Vbb + |VOUT(CL)|)· ln (1+ IL·RL
|VOUT(CL)| )
Maximum allowable load inductance for
a single switch off
L = f (IL ); Tj,start = 150°C,TC = 150°C const.,
Vbb = 12 V, RL = 0
L [mH]
1
10
100
1000
10000
1 2 3 4 5 6
IL [A]
BTS410E2
Data Sheet 9 2013-10-15
Typ. transient thermal impedance chip case
ZthJC = f(tp, D), D=tp/T
ZthJC [K/W]
0.01
0.1
1
10
1E-5 1E-4 1E-3 1E-2 1E-1 1E0 1E1
0
0.01
0.02
0.05
0.1
0.2
0.5
D=
tp [s]
BTS410E2
Data Sheet 10 2013-10-15
Options Overview
all versions: High-side switch, Input protection, ESD protection, load dump and
reverse battery protection with 150 in GND connection, protection against loss of
ground
Type BTS
412 B2
410D2
410E2
410F2
410G2
410H2
307
308
Logic version
B
D
E
F
G
H
Overtemperature protection with hysteresis
Tj >150 °C, latch function16)17)
Tj >150 °C, with auto-restart on cooling
X
X
X
X
X
X
X
X
Short circuit to GND protection
switches off when VON>3.5 V typ. and Vbb> 7 V
typ16) (when first turned on after approx. 150 s)
X
X
switches off when VON>8.5 V typ.16)
(when first turned on after approx. 150 s)
Achieved through overtemperature protection
X
X
X
X
X
X
Open load detection
in OFF-state with sensing current 30 A typ.
in ON-state with sensing voltage drop across
power transistor
X
X
X
X
X
X
X
X
Undervoltage shutdown with auto restart
X
X
X
X
X
X
X
X
Overvoltage shutdown with auto restart18)
X
X
X
X
X
X
-
X
Status feedback for
overtemperature
short circuit to GND
short to Vbb
open load
undervoltage
overvoltage
X
X
X
X
X
X
X
X
-19)
X
X
X
X
X
-19)
X
-
-
X
X
-19)
X
-
-
X
-
-19)
X
-
-
X
X
X
X
-
-
X
X
X
X
X
-
X
X
X
X
-
-
Status output type
CMOS
Open drain
X
X
X
X
X
X
X
X
Output negative voltage transient limit
(fast inductive load switch off)
to Vbb - VON(CL)
X
X
X
X
X
X
X
X
Load current limit
high level (can handle loads with high inrush currents)
low level (better protection of application)
X
X
X
X
X
X
X
X
Protection against loss of GND
X
X
X
X
X
X
X
X
16
) Latch except when Vbb -VOUT < VON(SC) after shutdown. In most cases VOUT = 0 V after shutdown (VOUT
0 V only if forced externally). So the device remains latched unless Vbb < VON(SC) (see page 4). No latch
between turn on and td(SC).
17
) With latch function. Reseted by a) Input low, b) Undervoltage
18
) No auto restart after overvoltage in case of short circuit
19
) Low resistance short Vbb to output may be detected in ON-state by the no-load-detection
BTS410E2
Data Sheet 11 2013-10-15
Timing diagrams
Figure 1a: Vbb turn on:
IN
V
OUT
t
V
bb
ST open drain
A
A
t
d(bb IN)
in case of too early VIN=high the device may not turn on (curve A)
td(bb IN) approx. 150 s
Figure 2a: Switching a lamp,
IN
ST
OUT
L
t
V
I
Figure 2b: Switching an inductive load
IN
ST
L
t
V
I
*)
OUT
t
d(ST)
I
L(OL)
*) if the time constant of load is too large, open-load-status may
occur
Figure 3a: Turn on into short circuit,
IN
ST
OUT
L
t
V
I
t
d(SC)
BTS410E2
Data Sheet 12 2013-10-15
td(SC) approx. -- s if Vbb - VOUT > 8.5 V typ.
Figure 3b: Turn on into overload,
IN
ST
L
t
I
L(SCr)
I
I
L(SCp)
Heating up may require several seconds,
Vbb - VOUT < 8.5 V typ.
Figure 3c: Short circuit while on:
IN
ST
OUT
L
t
V
I
**)
**) current peak approx. 20 s
Figure 4a: Overtemperature:
Reset if Tj <Tjt
IN
ST
OUT
J
t
V
T
Figure 5a: Open load: detection in ON-state, turn
on/off to open load
IN
ST
OUT
L
t
V
I
open
t
d(ST)
BTS410E2
Data Sheet 13 2013-10-15
Figure 5b: Open load: detection in ON-state, open
load occurs in on-state
IN
ST
OUT
L
t
V
I
open
normal
normal
t
d(ST OL1)
t
d(ST OL2)
td(ST OL1) = tbd s typ., td(ST OL2) = tbd s typ
Figure 6a: Undervoltage:
IN
V
OUT
t
V
bb
ST open drain
V
V
bb(under)
bb(u rst)
bb(u cp)
V
Figure 6b: Undervoltage restart of charge pump
bb(under)
V
V
bb(u rst)
V
bb(over)
V
bb(o rst)
V
bb(u cp)
off-state
on-state
V
ON(CL)
V
bb
V
on
off-state
charge pump starts at Vbb(ucp) =5.6 V typ.
Figure 7a: Overvoltage:
IN
V
OUT
t
V
bb
ST
ON(CL)
V
V
bb(over)
V
bb(o rst)
BTS410E2
Data Sheet 14 2013-10-15
Figure 9a: Overvoltage at short circuit shutdown:
IN
V
OUT
t
V
bb
ST
I
L
V
bb(o rst)
Output short to GND
short circuit shutdown
Overvoltage due to power line inductance. No overvoltage auto-
restart of PROFET after short circuit shutdown.
BTS410E2
Data Sheet 15 2013-10-15
Package and Ordering Code
All dimensions in mm
PG-TO263-5-2 Ordering code
BTS410E2 E3062A
SP001104816
Published by
Infineon Technologies AG,
D-81726 München
© Infineon Technologies AG 2013
All Rights Reserved.
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