TIP3055 NPN SILICON POWER TRANSISTOR Designed for Complementary Use with the TIP2955 Series 90 W at 25C Case Temperature 15 A Continuous Collector Current Customer-Specified Selections Available SOT-93 PACKAGE (TOP VIEW) B 1 C 2 E 3 Pin 2 is in electrical contact with the mounting base. MDTRAAA absolute maximum ratings at 25C case temperature (unless otherwise noted) RATING SYMBOL VALUE Collector-base voltage (IE = 0) VCBO 100 V Collector-emitter voltage (IB = 0) (see Note 1) VCER 70 V Emitter-base voltage VEBO 7 V IC 15 A IB 7 A Continuous collector current Continuous base current E T E L O S B O UNIT Continuous device dissipation at (or below) 25C case temperature (see Note 2) Ptot 90 W Continuous device dissipation at (or below) 25C free air temperature (see Note 3) Ptot 3.5 W 1/2LIC2 62.5 mJ Tj -65 to +150 C Tstg -65 to +150 C TL 260 C Unclamped inductive load energy (see Note 4) Operating junction temperature range Storage temperature range Lead temperature 3.2 mm from case for 10 seconds NOTES: 1. 2. 3. 4. This value applies when the base-emitter resistance RBE = 100 . Derate linearly to 150C case temperature at the rate of 0.72 W/C. Derate linearly to 150C free air temperature at the rate of 28 mW/C. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = 0.4 A, RBE = 100 , VBE(off) = 0, RS = 0.1 , VCC = 10 V. DECEMBER 1970 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 1 TIP3055 NPN SILICON POWER TRANSISTOR electrical characteristics at 25C case temperature PARAMETER V(BR)CEO ICER ICEO ICEV IEBO hFE V CE(sat) VBE hfe |hfe | Collector-emitter breakdown voltage Collector-emitter cut-off current Collector cut-off current Voltage between base and emitter Emitter cut-off current TEST CONDITIONS IC = 30 mA IB = 0 VCE = 70 V RBE = 100 VCE = 30 V IB = 0 VCE = 100 V VEB = 7V MIN (see Note 5) 60 mA VBE = -1.5 V 5 mA IC = 0 5 mA VCE = 4V IC = 4A 4V IC = 1 0A 20 (see Notes 5 and 6) IB = 0.4 A IC = 4A saturation voltage IB = 3.3 A IC = 1 0A 4V IC = 4A VCE = 10 V IC = 0.5 A f = 1 kHz 15 VCE = 10 V IC = 0.5 A f = 1 MHz 3 current transfer ratio Small signal forward current transfer ratio 70 5 Collector-emitter Small signal forward V 0.7 VCE = VCE = UNIT mA transfer ratio voltage MAX 1 Forward current Base-emitter TYP 1.1 (see Notes 5 and 6) 3 (see Notes 5 and 6) 1.8 E T E L O S B O V V NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 s, duty cycle 2%. 6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. thermal characteristics MAX UNIT RJC Junction to case thermal resistance PARAMETER MIN TYP 1.39 C/W RJA Junction to free air thermal resistance 35.7 C/W MAX UNIT resistive-load-switching characteristics at 25C case temperature PARAMETER ton Turn-on time toff Turn-off time TEST CONDITIONS MIN IC = 6 A IB(on) = 0.6 A IB(off) = -0.6 A VBE(off) = -4 V RL = 5 tp = 20 s, dc 2% 0.6 s 1 s Voltage and current values shown are nominal; exact values vary slightly with transistor parameters. 2 TYP DECEMBER 1970 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. TIP3055 NPN SILICON POWER TRANSISTOR TYPICAL CHARACTERISTICS TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT TCS637AD 1000 hFE - DC Current Gain VCE = 4 V TC = 25C tp = 300 s, duty cycle < 2% 100 E T E L O S B O 10 0*01 0*1 1*0 10 IC - Collector Current - A Figure 1. MAXIMUM SAFE OPERATING REGIONS MAXIMUM FORWARD-BIAS SAFE OPERATING AREA IC - Collector Current - A 100 SAS637AB tp = 300 s, d = 0.1 = 10% tp = 1 ms, d = 0.1 = 10% tp = 10 ms, d = 0.1 = 10% DC Operation 10 1*0 0*1 1*0 10 100 1000 VCE - Collector-Emitter Voltage - V Figure 2. DECEMBER 1970 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 3 TIP3055 NPN SILICON POWER TRANSISTOR THERMAL INFORMATION MAXIMUM POWER DISSIPATION vs CASE TEMPERATURE TIS637AB Ptot - Maximum Power Dissipation - W 100 80 60 40 20 E T E L O S B O 0 0 25 50 75 100 125 150 TC - Case Temperature - C Figure 3. 4 DECEMBER 1970 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice.