TIP3055
NPN SILICON POWER TRANSISTOR
1
DECEMBER 1970 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
●Designed for Complementary Use with the
TIP2955 Series
●90 W at 25°C Case Temperature
●15 A Continuous Collector Current
●Customer-Specified Selections Available
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
NOTES: 1. This value applies when the base-emitter resistance RBE = 100 Ω.
2. Derate linearly to 150°C case temperature at the rate of 0.72 W/°C.
3. Derate linearly to 150°C free air temperature at the rate of 28 mW/°C.
4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = 0.4 A, RBE = 100 Ω,
VBE(off) = 0, RS = 0.1 Ω, VCC = 10 V.
RATING SYMBOL VALUE UNIT
Collector-base voltage (IE = 0) VCBO 100 V
Collector-emitter voltage (IB = 0) (see Note 1) VCER 70 V
Emitter-base voltage VEBO 7V
Continuous collector current IC15 A
Continuous base current IB7A
Continuous device dissipation at (or below) 25°C case temperature (see Note 2) Ptot 90 W
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3) Ptot 3.5 W
Unclamped inductive load energy (see Note 4) ½LIC262.5 mJ
Operating junction temperature range Tj-65 to +150 °C
Storage temperature range Tstg -65 to +150 °C
Lead temperature 3.2 mm from case for 10 seconds TL260 °C
SOT-93 PACKAGE
(TOP VIEW)
Pin 2 is in electrical contact with the mounting base.
MDTRAAA
B
C
E
1
2
3
OBSOLETE
TIP3055
NPN SILICON POWER TRANSISTOR
2
DECEMBER 1970 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
† Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
electrical characteristics at 25°C case temperature
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
V(BR)CEO
Collector-emitter
breakdown voltage IC = 30 mA IB = 0 (see Note 5) 60 V
ICER
Collector-emitter
cut-off current VCE = 70 V R
BE =100 Ω 1mA
ICEO
Collector cut-off
current VCE = 30 V I
B=0 0.7 mA
ICEV
Voltage between
base and emitter VCE = 100 V VBE = -1.5 V 5 mA
IEBO
Emitter cut-off
current VEB = 7 V I
C=0 5 mA
hFE
Forward current
transfer ratio
VCE = 4 V
VCE = 4 V
IC= 4A
IC= 1 0A (see Notes 5 and 6) 20
5
70
VCE(sat)
Collector-emitter
saturation voltage
IB = 0.4 A
IB = 3.3 A
IC= 4A
IC= 1 0A (see Notes 5 and 6) 1.1
3V
VBE
Base-emitter
voltage VCE = 4 V IC= 4 A (see Notes 5 and 6) 1.8 V
hfe
Small signal forward
current transfer ratio VCE = 10 V IC= 0.5 A f = 1 kHz 15
|hfe|Small signal forward
current transfer ratio VCE = 10 V IC= 0.5 A f = 1 MHz 3
thermal characteristics
PARAMETER MIN TYP MAX UNIT
RθJC Junction to case thermal resistance 1.39 °C/W
RθJA Junction to free air thermal resistance 35.7 °C/W
resistive-load-switching characteristics at 25°C case temperature
PARAMETER TEST CONDITIONS †MIN TYP MAX UNIT
ton Tu r n -o n t im e IC = 6 A
VBE(off) = -4 V
IB(on) = 0.6 A
RL = 5 Ω
IB(off) = -0.6 A
tp = 20 µs, dc ≤ 2%
0.6 µs
toff Turn-off time 1µs
OBSOLETE
TIP3055
NPN SILICON POWER TRANSISTOR
3
DECEMBER 1970 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
TYPICAL CHARACTERISTICS
Figure 1.
MAXIMUM SAFE OPERATING REGIONS
Figure 2.
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
IC - Collector Current - A
0·01 0·1 1·0 10
hFE - DC Current Gain
10
100
1000 TCS637AD
VCE = 4 V
TC = 25°C
tp = 300 µs, duty cycle < 2%
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
VCE - Collector-Emitter Voltage - V
1·0 10 100 1000
IC - Collector Current - A
0·1
1·0
10
100 SAS637AB
tp = 300 µs,
d = 0.1 = 10%
tp = 1 ms,
d = 0.1 = 10%
tp = 10 ms,
d = 0.1 = 10%
DC Operation
OBSOLETE
TIP3055
NPN SILICON POWER TRANSISTOR
4
DECEMBER 1970 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
THERMAL INFORMATION
Figure 3.
MAXIMUM POWER DISSIPATION
vs
CASE TEMPERATURE
TC - Case Temperature - °C
0 25 50 75 100 125 150
Ptot - Maximum Power Dissipation - W
0
20
40
60
80
100 TIS637AB
OBSOLETE
