SPECTRAL RESPONSIVITY
Wavelength (nm)
200 300 400 500 600 700 800 900 1000 1100
Voltage Output (V/µW)
Using Internal
1MΩ Resistor
Infrared
Ultraviolet
Blue
Green
Yellow
Red
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
Photodiode Responsivity (A/W)
OPT101
FEATURES
●SINGLE SUPPLY: +2.7 to +36V
●PHOTODIODE SIZE: 0.090 x 0.090 inch
●INTERNAL 1MΩ FEEDBACK RESISTOR
●HIGH RESPONSIVITY: 0.45A/W (650nm)
●BANDWIDTH: 14kHz at RF = 1MΩ
●LOW QUIESCENT CURRENT: 120µA
●AVAILABLE IN 8-PIN DIP AND 8-LEAD
SURFACE-MOUNT PACKAGES
MONOLITHIC PHOTODIODE AND
SINGLE-SUPPLY TRANSIMPEDANCE AMPLIFIER
1MΩ
OPT101
3pF
8pF
2
5
4
V+
λ
3
8
VB
7.5mV
1
DESCRIPTION
The OPT101 is a monolithic photodiode with on-chip
transimpedance amplifier. Output voltage increases linearly
with light intensity. The amplifier is designed for single or
dual power-supply operation, making it ideal for battery-
operated equipment.
The integrated combination of photodiode and
transimpedance amplifier on a single chip eliminates the
problems commonly encountered in discrete designs such as
leakage current errors, noise pick-up, and gain peaking due
to stray capacitance. The 0.09 x 0.09 inch photodiode is
operated in the photoconductive mode for excellent linearity
and low dark current.
The OPT101 operates from +2.7V to +36V supplies and
quiescent current is only 120µA. It is available in clear
plastic 8-pin DIP, and J-formed DIP for surface mounting.
Temperature range is 0°C to +70°C.
APPLICATIONS
●MEDICAL INSTRUMENTATION
●LABORATORY INSTRUMENTATION
●POSITION AND PROXIMITY SENSORS
●PHOTOGRAPHIC ANALYZERS
●BARCODE SCANNERS
●SMOKE DETECTORS
● CURRENCY CHANGERS
SBBS002A – JANUARY 1994 – REVISED OCTOBER 2003
www.ti.com
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
Copyright © 1994-2003, Texas Instruments Incorporated
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
All trademarks are the property of their respective owners.
OPT101
2SBBS002A
www.ti.com
SPECIFICATIONS
At TA = +25°C, VS = +2.7V to +36V, λ = 650nm, internal 1MΩ feedback resistor, and RL = 10kΩ, unless otherwise noted.
PHOTODIODE SPECIFICATIONS
TA = +25°C, VS = +2.7V to +36V unless otherwise noted.
Photodiode of OPT101P
PARAMETER CONDITIONS MIN TYP MAX UNITS
Photodiode Area (0.090 x 0.090in) 0.008 in2
(2.29 x 2.29mm) 5.2 mm2
Current Responsivity 650nm 0.45 A/W
650nm 865 µA/W/cm2
Dark Current VDIODE = 7.5mV 2.5 pA
vs Temperature Doubles every 7°C
Capacitance 1200 pF
OPT101P
PARAMETER CONDITIONS MIN TYP MAX UNITS
RESPONSIVITY
Photodiode Current 650nm 0.45 A/W
Voltage Output 650nm 0.45 V/µW
vs Temperature 100 ppm/°C
Unit to Unit Variation 650nm ±5%
Nonlinearity(1) FS Output = 24V ±0.01 % of FS
Photodiode Area (0.090 x 0.090in) 0.008 in2
(2.29 x 2.29mm) 5.2 mm2
DARK ERRORS, RTO(2)
Offset Voltage, Output +5 +7.5 +10 mV
vs Temperature ±10 µV/°C
vs Power Supply VS = +2.7V to +36V 10 100 µV/V
Voltage Noise, Dark, fB = 0.1Hz to 20kHz VS = +15V, VPIN3 = –15V 300 µVrms
TRANSIMPEDANCE GAIN
Resistor 1MΩ
Tolerance, P ±0.5 ±2%
W±0.5 %
vs Temperature ±50 ppm/°C
FREQUENCY RESPONSE
Bandwidth VOUT = 10Vp-p 14 kHz
Rise Fall Time, 10% to 90% VOUT = 10V Step 28 µs
Settling Time, 0.05% VOUT = 10V Step 160 µs
0.1% 80 µs
1% 70 µs
Overload Recovery 100%, Return to Linear Operation 50 µs
OUTPUT
Voltage Output, High (VS) – 1.3 (VS) – 1.15 V
Capacitive Load, Stable Operation 10 nF
Short-Circuit Current VS = 36V 15 mA
POWER SUPPLY
Operating Voltage Range +2.7 +36 V
Quiescent Current Dark, VPIN3 = 0V 120 240 µA
RL = ∞, VOUT = 10V 220 µA
TEMPERATURE RANGE
Specification 0 +70 °C
Operating 0 +70 °C
Storage –25 +85 °C
Thermal Resistance,
θ
JA 100 °C/W
NOTES: (1) Deviation in percent of full scale from best-fit straight line. (2) Referred to Output. Includes all error sources.
OPT101 3
SBBS002A www.ti.com
OP AMP SPECIFICATIONS
At TA = +25°C, VS = +2.7V to +36V, λ = 650nm, internal 1MΩ feedback resistor, and RL = 10kΩ, unless otherwise noted.
OPT101 Op Amp(1)
PARAMETER CONDITIONS MIN TYP MAX UNITS
INPUT
Offset Voltage ±0.5 mV
vs Temperature ±2.5 µV/°C
vs Power Supply 10 µV/V
Input Bias Current (–) Input 165 pA
vs Temperature (–) Input
Doubles every 10°C
Input Impedance
Differential 400 || 5 MΩ || pF
Common-Mode 250 || 35 GΩ || pF
Common-Mode Input Voltage Range Linear Operation 0 to [(VS) – 1] V
Common-Mode Rejection 90 dB
OPEN-LOOP GAIN
Open-loop Voltage Gain 90 dB
FREQUENCY RESPONSE
Gain-Bandwidth Product(2) 2MHz
Slew Rate 1V/µs
Settling Time 1% 5.8 µs
0.1% 7.7 µs
0.05% 8.0 µs
OUTPUT
Voltage Output, High (VS) – 1.3 (VS) – 1.15 V
Short-Circuit Current VS = +36V 15 mA
POWER SUPPLY
Operating Voltage Range +2.7 +36 V
Quiescent Current Dark, VPIN3 = 0V 120 240 µA
RL = ∞, VOUT = 10V 220 µA
NOTES: (1) Op amp specifications provided for information and comparison only. (2) Stable gains ≥ 10V/V.
OPT101
4SBBS002A
www.ti.com
MOISTURE SENSITIVITY
AND SOLDERING
Clear plastic does not contain the structural-enhancing fillers
used in black plastic molding compound. As a result, clear
plastic is more sensitive to environmental stress than black
plastic. This can cause difficulties if devices have been stored
in high humidity prior to soldering. The rapid heating during
soldering can stress wire bonds and cause failures. Prior to
soldering, it is recommended that plastic devices be baked-out
at +85°C for 24 hours.
The fire-retardant fillers used in black plastic are not compat-
ible with clear molding compound. The OPT101 plastic
packages cannot meet flammability test, UL-94.
PIN CONFIGURATIONS
Top View DIP
V
S
–In
–V
1MΩ Feedback
Common
NC
NC
Output
1
2
3
4
8
7
6
5
(1)
NOTE: (1) Photodiode location.
ABSOLUTE MAXIMUM RATINGS(1)
Supply Voltage (VS to
“Common”
or pin 3) ................................ 0 to +36V
Output Short-Circuit (to ground)............................................... Continuous
Operating Temperature .................................................... –25°C to +85°C
Storage Temperature........................................................ –25°C to +85°C
Junction Temperature ...................................................................... +85°C
Lead Temperature (soldering, 10s) ............................................... +300°C
(Vapor-Phase Soldering Not Recommended)
NOTE: (1) Stresses above these ratings may cause permanent damage.
Exposure to absolute maximum conditions for extended periods may degrade
device reliability. These are stress ratings only, and functional operation of the
device at these or any other conditions beyond those specified is not implied.
ELECTROSTATIC
DISCHARGE SENSITIVITY
This integrated circuit can be damaged by ESD. Texas
Instruments recommends that all integrated circuits be handled
with appropriate precautions. Failure to observe proper han-
dling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation
to complete device failure. Precision integrated circuits may
be more susceptible to damage because very small parametric
changes could cause the device not to meet its published
specifications.
SPECIFIED
PACKAGE TEMPERATURE PACKAGE ORDERING TRANSPORT
PRODUCT PACKAGE-LEAD DESIGNATOR RANGE MARKING NUMBER MEDIA, QUANTITY
OPT101P DIP-8 NTC –25°C to +85°C OPT101 OPT101P Rail, 50
OPT101P-J DIP-8, Surface Mount(2) DTL –25°C to +85°C OPT101 OPT101P-J Rail, 50
NOTES: (1) For the most current package and ordering information, see the Package Option Addendum at the end of this data sheet. (2) 8-pin DIP with J-formed
leads for surface mounting.
PACKAGE/ORDERING INFORMATION(1)
OPT101 5
SBBS002A www.ti.com
TYPICAL PERFORMANCE CURVES
At TA = +25°C, VS = +2.7V to +36V, λ = 650nm, internal 1MΩ feedback resistor, and RL = 10kΩ, unless otherwise noted.
VOLTAGE RESPONSIVITY vs RADIANT POWER
Radiant Power (µW)
Output Voltage (V)
0.01 0.1 10 100 1k1
10
1
0.1
0.01
0.001
R
F
= 1MΩ
RF = 100kΩ
RF = 10MΩ
λ = 650nm
R
F
= 50kΩ
RESPONSE vs INCIDENT ANGLE
Relative Response
Incident Angle (°)
0
1.0
0.8
0.6
0.4
0.2
0±20 ±40 ±60 ±80
θ
Y
θ
X
1.0
0.8
0.6
0.4
0.2
0
θ
Y
θ
XPlastic
DIP Package
DARK VOUT vs TEMPERATURE
Temperature (°C)
0 10203040506070
8
7.8
7.6
7.4
7.2
7
Output Voltage (mV)
VOLTAGE RESPONSIVITY vs IRRADIANCE
Irradiance (W/m2)
Output Voltage (V)
0.001 0.01 1 10 1000.1
10
1
0.1
0.01
0.001
RF = 1MΩ
RF = 100kΩ
RF = 10MΩ
λ = 650nm
R
F
= 50kΩ
VOLTAGE RESPONSIVITY vs FREQUENCY
Frequency (Hz)
100 1k 10k 100k
10
1
0.1
0.01
0.001
Responsivity (V/µW)
RF = 50kΩ, CEXT = 56pF
RF = 10MΩ
RF = 1MΩ
RF = 100kΩ, CEXT = 33pF
NORMALIZED SPECTRAL RESPONSIVITY
Wavelength (nm)
200 300 400 500 600 700 800 900 1000 1100
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
Normalized Current or Voltage Output
Ultraviolet
Blue
Green
Yellow
Red
70°C
25°C
Infrared
650nm
(0.45A/W)
OPT101
6SBBS002A
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TYPICAL PERFORMANCE CURVES (Cont.)
At TA = +25°C, VS = +2.7V to +36V, λ = 650nm, internal 1MΩ feedback resistor, and RL = 10kΩ, unless otherwise noted.
QUIESCENT CURRENT vs TEMPERATURE
Temperature (°C)
010203040 6050 70
300
275
250
225
200
175
150
125
100
75
50
Quiescent Current (µA)
V
S
= 15V, V
OUT
– V
PIN3
= 15V
V
S
= +15V, V
OUT
– V
PIN3
= 0V
V
S
= +5V, V
OUT
– V
PIN3
= 0V
V
S
= 5V, V
OUT
– V
PIN3
= 5V
QUIESCENT CURRENT vs (VOUT – VPIN3)
VOUT – VPIN3 (V)
0 5 10 15 20 25 30 35 40
300
250
200
150
100
50
0
Quiescent Current (µA)
VS = 2.7V
VS = 36VVS = 15V
SHORT CIRCUIT CURRENT vs V
S
V
S
(V)
0 5 10 15 20 25 30 35 40
20
18
16
14
12
10
8
6
4
2
0
Short Circuit Current (mA)
(I
BIAS
-I
DARK
) vs TEMPERATURE
Temperature (°C)
0 10203040506070
180
160
140
120
100
80
60
40
20
0
–20
–40
I
BIAS
-I
DARK
(pA)
1MΩ
OPT101
3pF
I
FEEDBACK
(I
BIAS
-I
DARK
)
λ
V
B
I
BIAS
8pF
I
DARK
NOISE EFFECTIVE POWER vs
MEASUREMENT BANDWIDTH, V
S
= +15, V
OUT
– V
PIN3
= 0
Bandwidth (Hz)
10 100 1k 10k 100k 1M
10
–7
10
–8
10
–9
10
–10
10
–11
10
–12
Noise Effective Power (W)
R
F
= 10MΩ
R
F
= 50k || 56pF
R
F
= 100k || 33pF
R
F
= 1MΩ
INTERNAL
OUTPUT NOISE VOLTAGE vs
MEASUREMENT BANDWIDTH, V
S
= +15, V
OUT
– V
PIN3
= 15V
Frequency (Hz)
10 100 1k 10k 100k 1M
1000
100
10
1
0.1
Noise Voltage (µVrms)
R
F
= 50kΩ || 56pF
R
F
= 10MΩR
F
= 1MΩ
INTERNAL
R
F
= 100kΩ || 33pF
OPT101 7
SBBS002A www.ti.com
TYPICAL PERFORMANCE CURVES (Cont.)
At TA = +25°C, VS = +2.7V to +36V, λ = 650nm, internal 1MΩ feedback resistor, and RL = 10kΩ, unless otherwise noted.
SMALL SIGNAL RESPONSE LARGE SIGNAL RESPONSE
SMALL SIGNAL RESPONSE (CLOAD = 10,000 pF)
(Pin 3 = 0V) SMALL SIGNAL RESPONSE (CLOAD = 10,000 pF)
(Pin 3 = –15V)
OPT101
8SBBS002A
www.ti.com
source to sink currents up to approximately 100µA. The
benefits of this current sink are shown in the typical
performance curves “Small Signal Response (CLOAD =
10,000pF)” which compare operation with pin 3 grounded
and connected to –15V.
Due to the architecture of this output stage current sink, there
is a slight increase in operating current when there is a voltage
between pin 3 and the output. Depending on the magnitude of
this voltage, the quiescent current will increase by
approximately 100µA as shown in the typical performance
curve "Quiescent Current vs (VOUT – VPIN3)".
APPLICATIONS INFORMATION
Figure 1 shows the basic connections required to operate the
OPT101. Applications with high-impedance power supplies
may require decoupling capacitors located close to the
device pins as shown. Output is 7.5mV dc with no light and
increases with increasing illumination.
Photodiode current, ID, is proportional to the radiant power, or
flux, (in watts) falling on the photodiode. At a wavelength of
650nm (visible red) the photodiode Responsivity, RI, is
approximately 0.45A/W. Responsivity at other wavelengths is
shown in the typical performance curve “Responsivity vs
Wavelength.”
FIGURE 1. Basic Circuit Connections.
The typical performance curve “Output Voltage vs Radiant
Power” shows the response throughout a wide range of
radiant power. The response curve “Output Voltage vs
Irradiance” is based on the photodiode area of 5.2mm2.
The OPT101’s voltage output is the product of the photodiode
current times the feedback resistor, (IDRF), plus a pedestal
voltage, VB, of approximately 7.5mV introduced for single
supply operation. The internal feedback resistor is laser trimmed
to 1MΩ. Using this resistor, the output voltage responsivity, RV,
is approximately 0.45V/µW at 650nm wavelength. Figure 1
shows the basic circuit connections for the OPT101 operating
with a single power supply and using the internal 1MΩ feedback
resistor for a response of 0.45V/µW at 650nm. Pin 3 is
connected to common in this configuration.
CAPACITIVE LOADING
The OPT101 is capable of driving load capacitances of 10nF
without instability. However, dynamic performance with
capacitive loads can be improved by applying a negative
bias voltage to Pin 3 (shown in Figure 2). This negative
power supply voltage allows the output to go negative in
response to the reactive effect of a capacitive load. An
internal JFET connected between pin 5 (output) and pin 3
allows the output to sink current. This current sink capability
can also be useful when driving the capacitive inputs of
some analog-to-digital converters which require the signal
NOISE PERFORMANCE
Noise performance of the OPT101 is determined by the op
amp characteristics, feedback components and photodiode
capacitance. The typical performance curve “Output Noise
Voltage vs Measurement Bandwidth” shows how the noise
varies with RF and measured bandwidth (0.1Hz to the
indicated frequency), when the output voltage minus the
voltage on pin 3 is greater than approximately 50mV. Below
this level, the output stage is powered down, and the effective
bandwidth is decreased. This reduces the noise to
approximately 1/3 the nominal noise value of 300µVrms, or
100µVrms. This enables a low level signal to be resolved.
Noise can be reduced by filtering the output with a cutoff
frequency equal to the signal bandwidth. This will improve
signal-to-noise ratio. Also, output noise increases in proportion
to the square root of the feedback resistance, while responsivity
increases linearly with feedback resistance. Best signal-to-noise
ratio is achieved with large feedback resistance. This comes
with the trade-off of decreased bandwidth.
The noise performance of the photodetector is sometimes
characterized by Noise Effective Power (NEP). This is the
radiant power that would produce an output signal equal to the
noise level. NEP has the units of radiant power (watts), or
Watts/√Hz to convey spectral information about the noise.
The typical performance curve “Noise Effective Power” vs
Measurement Bandwidth" illustrates the NEP for the OPT101.
FIGURE 2. Bipolar Power Supply Circuit Connections.
1MΩ
OPT101
3pF
2
5
4
V
S
= +2.7 to +36V
λ
3
8
V
B
8pF
1
Common
Dark output ≈ 7.5mV
Positive going output
with increased light
0.01 to 0.1µF
1MΩ
OPT101
3pF
2
5
4
V
S
λ
3
8
V
B
8pF
1
Common –V = –1V to (V
S
– 36V)
0.01 to 0.1µF
0.01 to 0.1µF
OPT101 9
SBBS002A www.ti.com
This capacitor eliminates gain peaking and prevents
instability. The value of CEXT can be determined from the
table in Figure 4. Values of RF, other than shown in the table,
can be interpolated.
(a)-
Series REXT
(b)-
External Feedback
REXT CEXT DC Gain Bandwidth
(MΩ) (pF) (x106V/A) (kHz)
150 2 8
225 3 6
5 10 6 2.5
10 5 11 1.3
50 —51 0.33
REXT CEXT DC Gain Bandwidth
(MΩ) (pF) (x106V/A) (kHz)
0.05(1) 56 0.05 58
0.1(1) 33 0.1 44
1—123
2—2 9.4
5—5 3.6
10 —10 1.8
50 —50 0.34
Note: (1) May require 1kΩ in series with pin 5 when driving
large capacitances.
FIGURE 4. Changing Responsivity with External Resistor.
FIGURE 3. Dark Error (Offset) Adjustment Circuit.
CHANGING RESPONSIVITY
An external resistor, REXT, can be connected to set a different
voltage responsivity. To increase the responsivity, this resistor
can be placed in series with the internal 1MΩ (Figure 4a), or
the external resistor can replace the internal resistor by not
connecting pin 4 (Figure 4b). The second configuration also
allows the circuit gain to be reduced below 106V/A by using
external resistors of less than 1MΩ.
Figure 4 includes tables showing the responsivity and
bandwidth. For values of RF less than 1MΩ, an external
capacitor, CEXT should be connected in parallel with RF.
DARK ERRORS
The dark errors in the specification table include all sources.
The dominant source of dark output voltage is the “pedestal”
voltage applied to the non-inverting input of the op amp.
This voltage is introduced to provide linear operation in the
absence of light falling on the photodiode. Photodiode dark
current is approximately 2.5pA and contributes virtually no
offset error at room temperature. The bias current of the op
amp's summing junction (– input) is approximately 165pA.
The dark current will be subtracted from the amplifier's bias
current, and this residual current will flow through the
feedback resistor creating an offset. The effects of temperature
on this difference current can be seen in the typical
performance curve “(IBIAS – IDARK) vs Temperature.” The
dark output voltage can be trimmed to zero with the optional
circuit shown in Figure 3. A low impedance offset driver (op
amp) should be used to drive pin 8 because this node has
signal-dependent currents.
+15V
–15V –15V
OPA177
1MΩ
OPT101
3pF
2
5
4
VS
λ
3
8
VB
8pF
1
Common –V
R1
500kΩ
1/2 REF200
100µA
VO
Adjust R1
for VO = 0V
with no light.
1MΩ
OPT101
3pF
2
5
4
V
S
λ
3
8
V
B
8pF
1
R
EXT
C
EXT
1MΩ
OPT101
3pF
2
5
4
VS
λ
3
8
VB
8pF
1
REXT
CEXT
OPT101
10 SBBS002A
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Applications using a feedback resistor significantly larger than
the internal 1MΩ resistor may require special consideration.
Input bias current of the op amp and dark current of the
photodiode increase significantly at higher temperatures. This
increase combined with the higher gain (RF > 1MΩ) can cause
the op amp output to be driven to ground at high temperatures.
Such applications may require a positive bias voltage applied to
pin 8 to ensure that the op amp output remains in the linear
operating region when the photodiode is not exposed to light.
Alternatively, a dual power supply can be used. The output may
be negative when sensing dark conditions.
LIGHT SOURCE POSITIONING
The OPT101 is tested with a light source that uniformly
illuminates the full area of the integrated circuit, including
the op amp. Although IC amplifiers are light-sensitive to
some degree, the OPT101 op amp circuitry is designed to
minimize this effect. Sensitive junctions are shielded with
metal, and the photodiode area is very large relative to the op
amp input circuitry.
If your light source is focused to a small area, be sure that it
is properly aimed to fall on the photodiode. A narrowly
focused beam falling on only the photodiode will provide
improved settling times compared to a source that uniformly
illuminates the full area of the die. If a narrowly focused light
source were to miss the photodiode area and fall only on the
op amp circuitry, the OPT101 would not perform properly.
The large 0.09" x 0.09" (2.29mm x 2.29mm) photodiode area
allows easy positioning of narrowly focused light sources.
The photodiode area is easily visible, as it appears very dark
compared to the surrounding active circuitry.
The incident angle of the light source also effects the apparent
sensitivity in uniform irradiance. For small incident angles, the
loss in sensitivity is simply due to the smaller effective light
gathering area of the photodiode (proportional to the cosine of
the angle). At a greater incident angle, light is diffracted and
scattered by the package. These effects are shown in the typical
performance curve “Responsivity vs Incident Angle.”
DYNAMIC RESPONSE
Using the internal 1MΩ resistor, the dynamic response of
the photodiode/op amp combination can be modeled as a
simple R • C circuit with a –3dB cutoff frequency of
approximately 14kHz. The R and C values are 1MΩ and
11pF respectively. By using external resistors, with less than
3pF parasitic capacitance, the frequency response can be
improved. An external 1MΩ resistor used in the configuration
shown in Figure 4b will create a 23kHz bandwidth with the
same 106V/A dc transimpedance gain. This yields a rise time
of approximately 15µs (10% to 90%). Dynamic response is
not limited by op amp slew rate. This is demonstrated by the
dynamic response oscilloscope photographs showing virtually
identical large-signal and small-signal response.
Dynamic response will vary with feedback resistor value as
shown in the typical performance curve “Responsivity vs
Frequency.” Rise time (10% to 90%) will vary according to
the –3dB bandwidth produced by a given feedback resistor
value:
t0.35
f
rC
=
where:
tr is the rise time (10% to 90%)
fC is the –3dB bandwidth
LINEARITY PERFORMANCE
The photodiode is operated in the photoconductive mode so
the current output of the photodiode is very linear with
radiant power throughout a wide range. Nonlinearity remains
below approximately 0.05% up to 100µA photodiode current.
The photodiode can produce output currents of 1mA or
greater with high radiant power, but nonlinearity increases
to several percent in this region.
This very linear performance at high radiant power assumes
that the full photodiode area is uniformly illuminated. If the
light source is focused to a small area of the photodiode,
nonlinearity will occur at lower radiant power.
FIGURE 5. Three-Wire Remote Light Measurement.
1MΩ
OPT101
3pF
0.01 to
0.1µF
21
5
4
λ
83
VB
8pF
+2.7 to
+36V
VOUT
OPT101 11
SBBS002A www.ti.com
FIGURE 6. Differential Light Measurement.
FIGURE 7. LED Output Regulation Circuit.
1MΩ
OPT101
5
4
3pF
+15V
10kΩ
OPA627
3.3nF
100kΩ
REF102 LED
IN4148
270Ω
+15V
4
6
2
+15V
7
–15V
4
10V
0.03µF11kΩ
LED
OPT101
Glass Microscope Slide
Approximately
92% light
available for application.
≈ 8%
V
B
8pF
2 1
2
3
6
38
1MΩ
OPT101
λ
V
B
V
01
1MΩ
OPT101
λ
V
B
V
02
100kΩ
LOG100
100kΩ
1nF
V
OUT
= K log
10
(V
02
/V
01
)
Log of Ratio Measurement
(Absorbance)
3pF
8pF
2
38
5
4
3pF
8pF
2
51
3
7
14
4
38
1+15V
1+15V
27
4
3
1
85
6
R
G
INA118 V
OUT
= (V
02
– V
01
) 1+
Difference Output
50kΩ
R
G
+15V
–15V
6
9
+15V
–15V
PACKAGING INFORMATION
Orderable Device Status (1) Package
Type Package
Drawing Pins Package
Qty Eco Plan (2) Lead/Ball Finish MSL Peak Temp (3)
OPT101P ACTIVE PDIP NTC 8 50 Green (RoHS &
no Sb/Br) CU NIPDAU N / A for Pkg Type
OPT101P-J ACTIVE SOP DTL 8 50 Green (RoHS &
no Sb/Br) CU NIPDAU Level-4-250C-72 HR
OPT101P-JG4 ACTIVE SOP DTL 8 50 Green (RoHS &
no Sb/Br) CU NIPDAU Level-4-250C-72 HR
OPT101PG4 ACTIVE PDIP NTC 8 50 Green (RoHS &
no Sb/Br) CU NIPDAU N / A for Pkg Type
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in
a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check
http://www.ti.com/productcontent for the latest availability information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements
for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered
at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and
package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS
compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame
retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material)
(3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder
temperature.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is
provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the
accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take
reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on
incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited
information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI
to Customer on an annual basis.
PACKAGE OPTION ADDENDUM
www.ti.com 16-Apr-2009
Addendum-Page 1
MECHANICAL DATA
MPDI059 – APRIL 2001
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
NTC (R-PDIP-T8) PLASTIC DUAL-IN-LINE
4202487/A 03/01
0.390 (9,91)
0.360 (9,14)
0.238 (6,05)
0.275 (6,99)
1
85
4
0.300 (7,62)
0.325 (8,26)
0.008 (0,20)
0.015 (0,38)
5.5°–8.5°0.100 (2,54)
0.120 (3,05)
0.120 (3,05)
0.135 (3,43)
0.015 (0,38) MIN
0.070 (1,78)
0.045 (1,14)
0.005 (0,13) MIN
4 PL
1/2 Lead
0.030 (0,762)
0.045 (1,143)
4 PL
0.014 (0,36)
0.022 (0,56)
Base Plane
Seating Plane
Index
Area
– C –
0.100 (2,54)
0.010 (0,25)
0.160 (4,06)
0.115 (2,92)
0.165 (4,19) MAX
0.300 (7,63)
0.430 (10,92)
MAX
0.060 (1,52)
MAX
Polished
Surface
C
M
Photodiode
Area
E
F
F
C
C
H
D
H
D
L
D
C
E
NOTES: A. All linear dimensions are in inches (millimeters).
B. This drawing is subject to change without notice.
C. Dimensions are measured with the package
seated in JEDEC seating plane gauge GS-3.
D. Dimensions do not include mold flash or protrusions.
Mold flash or protrusions shall not exceed 0.010 (0,25).
E. Dimensions measured with the leads constrained to be
perpendicular to Datum C.
F. Dimensions are measured at the lead tips with the
leads unconstrained.
G. Pointed or rounded lead tips are preferred to ease
insertion.
H. Maximum dimensions do not include dambar
protrusions. Dambar protrusions shall not exceed
0.010 (0,25).
I. Distance between leads including dambar protrusions
to be 0.005 (0,13) minumum.
J. A visual index feature must be located within the
cross–hatched area.
K. For automatic insertion, any raised irregularity on the
top surface (step, mesa, etc.) shall be symmetrical
about the lateral and longitudinal package centerlines.
L. Center of photodiode must be within 0.010 (0,25) of
center of photodiode area
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