Data Sheet Switching Diode DAN202UM lDimensions (Unit : mm) lApplications High speed switching lLand size figure (Unit : mm) 1.3 0.65 (1) 0.530.1 0.530.1 lConstruction Silicon epitaxial planer 0.8MIN 00.1 0.425 2.10.1 1.250.1 0.425 (3) 0.9MIN. Each lead has same dimensions lFeatures 1)Ultra small mold type. (UMD3F) 2)High reliability (2) 0.65 0.65 1.6 0.90.1 2.00.1 +0.1 0.32 -0.05 UMD3 0.130.05 1.30.1 lStructure ROHM : UMD3F JEDEC : SOT-323 JEITA : SC-70 dot (year week factory) lTaping dimensions (Unit : mm) 1.550.05 2.00.05 0.30.1 2.250.1 0 lAbsolute maximum ratings (Ta=25C) Parameter Symbol VRM Reverse voltage (repetitive peak) VR Reverse voltage (DC) IFM Forward current (single) Average rectified forward voltage (single) Io Isurge Surge current (t=1us) Power dissipation Pd Junction temperature Tj Storage temperature Tstg lElectrical characteristics (Ta=25C) Parameter Symbol VF Forward voltage 0.50.05 4.00.1 Limits 80 80 300 100 4 200 150 1.250.1 Unit V V mA mA A mW C C -55 to +150 Min. Typ. Max. Unit - - 1.2 V IF=100mA Conditions Reverse current IR - - 0.1 A VR=70V Capacitance between terminals Ct - - 3.5 pF Reverse recovery time trr - - 4 ns VR=6V , f=1MHz VR=6V , IF=5mA , RL=50 www.rohm.com (c) 2011 ROHM Co., Ltd. All rights reserved. 1/3 2.40.1 8.00.2 5.50.2 00.1 2.40.1 3.50.05 1.750.1 4.00.1 2011.12 - Rev.A Data Sheet DAN202UM 100000 100 Ta=150C Ta=125C Ta=150C REVERSE CURRENT:IR(nA) FORWARD CURRENT:IF(mA) 10 10000 Ta=75C 1 Ta=125C 0.1 Ta=25C 0.01 0.001 1000 Ta=75C 100 Ta=25C 10 1 0 0.1 100 200 300 400 500 600 700 800 900 1000 10 10 20 30 40 50 60 70 80 940 f=1MHz Ta=25C IF=100mA n=30pcs 930 FORWARD VOLTAGE:VF(mV) CAPACITANCE BETWEEN TERMINALS:Ct(pF) 0 REVERSE VOLTAGEVR(V) VR-IR CHARACTERISTICS FORWARD VOLTAGEVF(mV) VF-IF CHARACTERISTICS 1 920 910 900 890 AVE:899mV 880 870 0.1 0 5 10 15 860 20 VF DISPERSION MAP REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 3 Ta=25C VR=80V n=10pcs 40 30 AVE:14nA 20 CAPACITANCE BETWEEN TERMINALS:Ct(pF) REVERSE CURRENT:IR(nA) 50 Ta=25C VR=6V f=1MHz n=10pcs 2 1 AVE:0.7pF 10 0 0 IR DISPERSION MAP www.rohm.com (c) 2011 ROHM Co., Ltd. All rights reserved. Ct DISPERSION MAP 2/3 2011.12 - Rev.A Data Sheet DAN202UM 20 10 REVERSE RECOVERY TIME:trr(ns) PEAK SURGE FORWARD CURRENT:IFSM(A) 15 8.3ms 10 5 8 7 6 5 4 3 2 1 AVE:3.50A 0 Ta=25C VR=6V IF=5mA RL=50 n=10pcs 9 1cyc IFSM AVE:1.93ns 0 trr DISPERSION MAP IFSM DISPERSION MAP 5 100 IFSM 8.3ms 8.3ms PEAK SURGE FORWARD CURRENT:IFSM(A) PEAK SURGE FORWARD CURRENT:IFSM(A) IFSM 4 1cyc 3 2 1 0 1 10 10 1 100 1 10 100 TIME:t(ms) IFSM-t CHARACTERISTICS NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 1000 10 Mounted on epoxy board Rth(j-a) 100 9 ELECTROSTATIC DISCHARGE TEST ESD(KV) TRANSIENT THERMAL IMPEDANCE:Rth (C/W) t Rth(j-c) 10 8 7 6 5 4 AVE:2.54kV 3 2 AVE:0.97kV 1 1 0.001 0.01 0.1 1 10 100 0 1000 TIME:t(s) Rth-t CHARACTERISTICS www.rohm.com (c) 2011 ROHM Co., Ltd. All rights reserved. C=200pF R=0 C=100pF R=1.5k ESD DISPERSION MAP 3/3 2011.12 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com (c) 2011 ROHM Co., Ltd. All rights reserved. R1120A Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: ROHM Semiconductor: DAN202UMTL