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8-Ch/Dual 4-Ch High-Performance CMOS Analog Multiplexers
DESCRIPTION
The DG408 is an 8 channel single-ended analog multiplexer
designed to connect one of eight inputs to a common output
as determined by a 3-bit binary address (A0, A1, A2). The
DG409 is a dual 4 channel differential analog multiplexer
designed to connect one of four differential inputs to a
common dual output as determined by its 2-bit binary
address (A0, A1). Break-before-make switching action
protects against momentary crosstalk between adjacent
channels.
An on channel conducts current equally well in both
directions. In the off state each channel blocks voltages up
to the power supply rails. An enable (EN) function allows the
user to reset the multiplexer/demultiplexer to all switches off
for stacking several devices. All control inputs, address (Ax)
and enable (EN) are TTL compatible over the full specified
operating temperature range.
Applications for the DG408, DG409 include high speed data
acquisition, audio signal switching and routing, ATE
systems, and avionics. High performance and low power
dissipation make them ideal for battery operated and
remote instrumentation applications.
Designed in the 44 V silicon-gate CMOS process, the
absolute maximum voltage rating is extended to 44 V.
Additionally, single supply operation is also allowed. An
epitaxial layer prevents latchup.
For additional information please see Technical Article
TA201.
FEATURES
• Low on-resistance - RDS(on): 100
• Low charge injection - Q: 20 pC
• Fast transition time - tTRANS: 160 ns
• Low power - ISUPPLY: 10 μA
• Single supply capability
• 44 V supply max. rating
• TTL compatible logic
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
Note
*
This datasheet provides information about parts that are
RoHS-compliant and/or parts that are non-RoHS-compliant. For
example, parts with lead (Pb) terminations are not RoHS-compliant.
Please see the information/tables in this datasheet for details.
BENEFITS
• Reduced switching errors
• Reduced glitching
• Improved data throughput
• Reduced power consumption
• Increased ruggedness
• Wide supply ranges
- Single supply: +5 V to 36 V
- Dual supplies: ± 5 V to ± 20 V
APPLICATIONS
• Data acquisition systems
• Audio signal routing
• ATE systems
• Battery powered systems
• Single supply systems
• Medical instrumentation
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
Available
Available
S3
A0
S6
D
S4
A1
S8
S7
EN
Dual-In-Line,
SOIC and TSSOP
A2
V- GND
S1V+
S2S5
Decoders/Drivers
1
2
3
4
5
6
7
16
15
14
13
12
11
10
Top View
89
DG408
Dual-In-Line,
SOIC and TSSOP
9
A0
Da
A1
Db
EN GND
V- V+
S1a S1b
S2a S2b
S3a S3b
S4a S4b
Decoders/Drivers
1
2
3
4
5
6
7
16
15
14
13
12
11
10
Top View
8
DG409
DG408, DG409
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Notes
• Logic “0” = VAL 0.8 V
• Logic “1” = VAH 2.4 V
•X = Do not care
Note
• -T1 indicates Tape and Reel, -E3 indicates Lead-Free and RoHS Compliant, NO -E3 indicates standard Tin/Lead finish.
Notes
a. Signals on SX, DX or INX exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
b. All leads soldered or welded to PC board.
c. Derate 6 mW/°C above 75 °C.
d. Derate 7.6 mW/°C above 75 °C.
e. Also applies when V- = GND.
TRUTH TABLE (DG408)
A2A1A0EN ON SWITCH
XXX0None
0001 1
0011 2
0101 3
0111 4
1001 5
1011 6
1101 7
1111 8
TRUTH TABLE (DG409)
A1A0EN ON SWITCH
XX0None
0011
0112
1013
1114
ORDERING INFORMATION (Commercial)
PART CONFIGURATION TEMP. RANGE PACKAGE ORDERING PART NUMBER
DG408 8:1 x 1 -40 °C to 85 °C
16-pin plastic DIP DG408DJ
DG408DJ-E3
16-pin SOIC
DG408DY
DG408DY-E3
DG408DY-T1
DG408DY-T1-E3
16-pin TSSOP DG408DQ-E3
DG408DQ-T1-E3
DG409 4:1 x 2 -40 °C to 85 °C
16-pin plastic DIP DG409DJ
DG409DJ-E3
16-pin SOIC
DG409DY
DG409DY-E3
DG409DY-T1
DG409DY-T1-E3
16-pin TSSOP DG409DQ-E3
DG409DQ-T1-E3
ABSOLUTE MAXIMUM RATINGS
PARAMETER LIMIT UNIT
Voltages Referenced to V- V+ to V- e 44
V
GND to V- -25
Digital Inputsa, VS, VD
(V-) - 2 to (V+) + 2
or 20 mA, whichever occurs first
Current (any terminal) 30 mA
Peak Current, S or D (pulsed at 1 ms, 10 % duty cycle max.) 100
Storage Temperature (DJ, DY suffix) -65 to 125 °C
Power Dissipation (Package) b 16-pin plastic DIP c 450 mW
16-pin narrow SOIC and TSSOP d 600
DG408, DG409
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SPECIFICATIONS a
PARAMETER SYMBOL
TEST CONDITIONS UNLESS
OTHERWISE SPECIFIED
TEMP. b TYP. c
D SUFFIX
-40 °C to 85 °C
UNIT
V+ = 15 V, V- = -15 V
MIN. d MAX. d
VAL = 0.8 V, VAH = 2.4 Vf
Analog Switch
Analog Signal Range e VANALOG Full - -15 15 V
Drain-Source
On-Resistance RDS(on) VD = ± 10 V, IS = -10 mA Room 40 - 100
Full - - 125
RDS(on) Matching Between
Channels g RDS(on) VD = ± 10 V Room - - 15
Source Off Leakage Current IS(off) VS = ± 10 V,
VD = ± 10 V, VEN = 0 V
Room - -0.5 0.5
nA
Full - -5 5
DG408
Drain Off Leakage
Current ID(off)
VD = ± 10 V,
VS = ± 10 V,
VEN = 0 V
Room - -1 1
DG408 Full - -20 20
DG409 Room - -1 1
DG409 Full - -10 10
DG408
Drain On Leakage
Current ID(on)
VS = VD = ± 10 V
sequence each
switch on
Room - -1 1
DG408 Full - -20 20
DG409 Room - -1 1
DG409 Full - -10 10
Digital Control
Logic High Input Voltage VINH Full - 2.4 - V
Logic Low Input Voltage VINL Full - - 0.8
Logic High Input Current IAH VA = 2.4 V, 15 V Full - -10 10 μA
Logic Low Input Current IAL VEN = 0 V, 2.4 V, VA = 0 V Full - -10 10
Logic Input Capacitance Cin f = 1 MHz Room 8 - - pF
Dynamic Characteristics
Transition Time tTRANS see figure 2 Full 160 - 250
ns
Break-Before-Make Interval tOPEN see figure 4 Room - 10 -
Enable Turn-On Time tON(EN) see figure 3
Room 115 - 150
Full - - -
Enable Turn-Off Time tOFF(EN) Room 105 - 150
Charge Injection Q CL = 10 nF, VS = 0 V Room 20 - - pC
Off Isolation h OIRR VEN = 0 V, RL = 1 k,
f = 1 MHz Room -75 - -
pF
Source Off Capacitance CS(off) VEN = 0 V, VS = 0 V,
f = 1 MHz Room 3 - -
DG408 Drain Off
Capacitance CD(off) VEN = 0 V,
VD = 0 V,
f = 1 MHz
Room 26 - -
DG409 Room 14 - -
DG408 Drain On
Capacitance CD(on) Room 37 - -
DG409 Room 25 - -
Power Supplies
Positive Supply Current I+ VEN = VA = 0 V or 5 V Full 10 - 75 μA
Negative Supply Current I- Full 1 -75 -
Positive Supply Current I+ VEN = VA = 0 V or 5 V
Room 0.2 - 0.5 mA
Full - - 2
Negative Supply Current I- Full - -500 - μA
DG408, DG409
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Notes
a. Refer to PROCESS OPTION FLOWCHART.
b. Room = 25 °C, Full = as determined by the operating temperature suffix.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this datasheet.
e. Guaranteed by design, not subject to production test.
f. VIN = input voltage to perform proper function.
g. RDS(on) = RDS(on) max. - RDS(on) min.
h. Worst case isolation occurs on channel 4 due to proximity to the drain pin.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONSa (Single Supply)
PARAMETER SYMBOL
TEST CONDITIONS UNLESS
OTHERWISE SPECIFIED
TEMP. b TYP. c
D SUFFIX
-40 °C to 85 °C
UNIT
V+ = 12 V, V- = 0 V
MIN. d MAX. d
VAL = 0.8 V, VAH = 2.4 Vf
Analog Switch
Drain-Source
On-Resistance e,f RDS(on) VD = 3 V, 10 V, IS = -1 mA Room 90 - -
Dynamic Characteristics
Switching Time of
Multiplexer e tTRANS V
S1 = 8 V, VS8 = 0 V, VIN = 2.4 V Room 180 - -
ns
Enable Turn-On Time e tON(EN) VINH = 2.4 V, VINL = 0 V,
VS1 = 5 V Room 180 - -
Enable Turn-Off Time e tOFF(EN) Room 120 - -
Charge Injection e QC
L = 1 nF, VS = 0 V, RS = 0 Room 5 - - pC
DG408, DG409
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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Source/Drain Capacitance vs. Analog Voltage
Drain Leakage Current vs. Source/Drain Voltage
Input Switching Threshold vs. Supply Voltage
Drain Leakage Current vs. Source/Drain Voltage
(Single 12 V Supply)
Source Leakage Current vs. Source Voltage
Negative Supply Current vs. Switching Frequency
(pF) C
S, D
V
AN AL O G
- Analog Voltage (V)
0 15 - 15
0
20
40
80
60
V+ = 15 V
V- = - 15 V
C
D( of f)
C
S( o f f )
- 10 - 5 5 1 0
C
D( on)
DG408 I
D( on)
, I
D( of f)
(pA)
I
D
V
D
or V
S
- Drain or Source V oltage (V)
0 15 - 15
- 140
- 60
20
100
60
- 20
- 100
V+ = 15 V
V- = - 15 V
V
S
= - V
D
for I
D(off)
V
D
= V
S ( open)
for I
D( on)
DG409 I
D( of f)
- 10 - 5 5 1 0
DG409 I
D( on)
(V)
TH
V
+ V
SUPPLY
(V)
12 2048 16
0.0
0.5
2.0
1.5
1.0
V
AN AL O G
- Analog Voltage (V)
(pA)
I
D
12 0 10 6 2 4 8
- 60
- 40
- 20
60
40
0
20
DG408 I
D( of f)
DG409 I
D( of f)
DG409 I
D( on)
DG408 I
D( on)
V
S
= 0 V for I
D( of f)
V
S
= V
D
for I
D( on)
V
S
- Source V oltage (V)
0 15 - 15
- 10
0
10
20
15
5
- 5
V+ = 15 V
V- = - 15 V
V+ = 12 V
V- = 0 V
- 10 - 5 5 1 0
I
S(off)
(pA)
Switching Frequency (Hz)
10K 10M1 0 0 1K 100K 1M
V
SU PPL Y
= ± 15 V
- 100 mA
- 1 mA
- 100 µA
- 10 µA
- 1 µA
- 0.1 µA
- 10 mA
V
EN
= 2.4 V
V
EN
= 0 V or 5 V
I-
DG408, DG409
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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Positive Supply Current vs. Switching Frequency
Positive Supply Current vs. Temperature (DG408)
RDS(on) vs. VD and Supply
ISUPPLY vs. Temperature
Charge Injection vs. Analog Voltage
RDS(on) vs. VD and Supply (Single Supply)
Switching Frequency (Hz)
10K 10M1 0 0 1K 100K 1 M
V
SU PPL Y
= 15 V
100 mA
10 mA
1 mA
100 µA
10 µA
V
EN
= 2.4 V
V
EN
= 0 V or 5 V
I+
R
DS(on)
(Ω)
V
D
- Drain V oltage (V)
0
40
100
60
80
120
20
- 20 - 12 - 8 - 4 0 4 8 1 2 1 6 2 0 - 16
± 5 V
± 8 V
± 10 V
± 12 V
± 20 V ± 15 V
I+, I-
Temperature (°C)
125 - 55 85 45 5
V
SU PPL Y
= ± 15 V
VA = 0 V
VEN = 0 V
I+
- (I-)
100 µA
1 µA
100 nA
10 nA
1 nA
100 pA
10 pA
10 µA
- 35 - 15 25 65 105
Q (pC)
V
S
- Source V oltage (V)
- 10
30
50
90
70
40
0
80
60
20
10
0 15- 15 - 10 - 5 5 1 0
V+ = 15 V
V- = - 15 V
V+ = 12 V
V- = 0 V
C
L
= 10 000 pF
V
IN
= 5 Vp-p
VD - Drain Voltage (V)
220
0
40
100
60
140
160
80
120
20
4 8 12 16 20
V+ = 7.5 V
10 V
12 V
15 V 20 V
22 V
V- = 0 V
RDS(on) (Ω)
DG408, DG409
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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
RDS(on) vs. VD and Temperature
Off Isolation and Crosstalk vs. Frequency
Switching Time vs. Bipolar Supply
RDS(on) vs. VD and Temperature (Single Supply)
Insertion Loss vs. Frequency
Switching Time vs. Single Supply
RDS(on) (Ω)
VD - Drain Voltage (V)
0 15 - 15
0
40
60
80
50
10
70
30
20
V+ = 15 V
V- = - 15 V
125 °C
85 °C
25 °C
- 55 °C
- 10 - 5 5 1 0
- 40 °C
0 °C
dB
f - Frequency (Hz)
10K 10M
- 30
- 70
- 90
- 50
1 0 0 1K 100K 1M
- 110
100M
- 130
-
5
V+ = 15 V
V- = - 15 V
R
L
= 1 kΩ
Of f-Isolation
Crosstalk
t
(
ns
)
V
SU
PPL Y
(V)
± 10 ± 12 ± 14 ± 16 ± 18 ± 20 ± 22
60
80
100
120
140
tOFF(EN)
tON(EN)
tTRANS
RDS(on) ()
VD - Drain Voltage (V)
4 0
10
30
50
70
90
110
130
V+ = 12 V
V- = 0 V
- 55 °C
- 40 °C
0 °C
125 °C
85 °C
25 °C
2681012
LOSS (dB)
f - Frequency (Hz)
10M
- 5
- 2
1
- 1
0
- 4
- 3
- 6
V+ = 15 V
V- = - 15 V
Ref. 1 V
RMS
R
L
= 50 Ω
R
L
= 1 kΩ
1 0 1 0 0 1K 10K 100K 1 M 100M
t (ns)
V
SUPPLY
(V)
158
100
150
225
175
200
250
125
91214131110
275
t
TRANS
t
OFF(EN)
t
ON(EN)
DG408, DG409
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SCHEMATIC DIAGRAM (Typical Channel)
Fig. 1
TEST CIRCUITS
Fig. 2 - Transition Time
EN
A0
S1
D
V+
Sn
V-
Decode/
Drive
Level
Shift
V-
V+
VREF
AX
GND
V+
A1
A0
A2
A1
A0
+ 15 V
- 15 V
EN
V+
V-GND
D
35 pF
VO
S1
S2 - S7
S8
50 Ω 300 Ω
± 10 V
± 10 V
+ 15 V
- 15 V
EN
V+
V-GND
35 pF
VO
S1
S1a - S4a, Da
S4b
50 Ω 300 Ω
± 10 V
± 10 V
Db
Logic
Input
Switch
Output
VS8
VO
tTRANS
tr < 20 ns
tf < 20 ns
S8 ONS1 ON
tTRANS
0 V
VS1
50 %
90 %
90 %
3 V
0 V
DG408
DG409
DG408, DG409
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TEST CIRCUITS
Fig. 3 - Enable Switching Time
Fig. 4 - Break-Before-Make Interval
Logic
Input
Switch
Output
VO
tr < 20 ns
tf < 20 ns
3 V
0 V
0 V
tOFF(EN)
tON(EN)
50 %
90 %
10 %
VO
EN
S1
S2 - S8
A0
A1
A2
50 Ω1 kΩ
VO
V+
GND V- D
- 5 V
35 pF
- 15 V
+ 15 V
S1b
S1a - S4a, Da
S2b - S4b
Db
EN
A0
A1
50 Ω1 kΩ
VO
V+
GND V-
- 5 V
35 pF
- 15 V
+ 15 V
DG408
DG409
50 %
80 %
Logic
Input
Switch
Output
VO
VS
tOPEN
tr < 20 ns
tf < 20 ns
0 V
3 V
0 V
EN V+
GND V-
+ 5 V
35 pF
- 15 V
+ 15 V
+ 2.4 V
A2Db, D
All S and Da
300 Ω
VO
50 Ω
A1
A0DG408
DG409
DG408, DG409
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TEST CIRCUITS
Fig. 5 - Charge Injection
Fig. 6 - Off Isolation
Fig. 8 - Insertion Loss
Fig. 7 - Crosstalk
Fig. 9 - Source Drain Capacitance
A0
EN
A1
A2
VO
V+
GND V-
D
- 15 V
+ 15 V
Rg
SX
CL
10 nF
Channel
Select
3 V
0 V
OFF ON
Logic
Input
Switch
Output
ΔVO
ΔVO is the measured voltage due to charge transfer
error Q, when the channel turns off.
Q = CL x ΔVO
OFF
RL
1 kΩ
VO
V+
GND V-
- 15 V
+ 15 V
A2
D
A1
A0
S8
SX
VS
EN
Rg = 50 Ω
Off Isolation = 20 log
VOUT
VIN
VIN
RL
1 kΩ
A2
VO
D
Rg = 50 Ω
Insertion Loss = 20 log
VOUT
A1
VIN
A0
VSS1
V+
GND V-
- 15 V
+ 15 V
EN
RL
1 kΩ
VO
V+
GND V-
- 15 V
+ 15 V
A2
D
A1
A0
S8
SX
VS
EN
Rg = 50 Ω
Crosstalk = 20 log
VOUT
VIN
VIN S1
f = 1 MHz
S1
D
EN
+ 15 V
- 15 V
GND
V+
V-
Meter
HP4192A
Impedance
Analyzer
or Equivalent
S8
A1
A2
A0
Channel
Select
DG408, DG409
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APPLICATION HINTS
Overvoltage Protection
A very convenient form of overvoltage protection consists of
adding two small signal diodes (1N4148, 1N914 type) in
series with the supply pins (see figure 10). This arrangement
effectively blocks the flow of reverse currents. It also floats
the supply pin above or below the normal V+ or V- value. In
this case the overvoltage signal actually becomes the power
supply of the IC. From the point of view of the chip, nothing
has changed, as long as the difference VS - (V-) does not
exceed + 44 V. The addition of these diodes will reduce the
analog signal range to 1 V below V+ and 1 V above V-, but it
preserves the low channel resistance and low leakage
characteristics.
Fig. 10 - Overvoltage Protection Using Blocking Diodes
Fig. 11
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1N4148
DG408
D
V-
V+
1N4148
SX
Vg
EN
A
0
A
1
+ 15 V
(MUX On-Off Control)
Analog
Inputs
(Outputs)
Clock
In
NC
Enable In
Analog
Output
(Input)
+ 15 V - 15 V
DG408
D
EN
GND
DM7493
V+ V-
NC
GND
+ 15 V
Analog
Inputs
(Outputs)
Analog
Outputs
(Inputs)
+ 15 V - 15 V
DG409
GNDV+ V-
Differential Differential
Clock
In
NC
GND
+ 15 V
NC
6
Reset Enable
J
K
CLK
J
K
CLK
CLEAR CLEAR
Q
S
5
S
7
S
6
S
8
S
1
S
3
S
2
S
4
S
1a
S
3a
S
2a
S
4a
S
1b
S
3b
S
2b
S
4b
D
a
D
b
A
0
A
1
A
2
B
IN
A
IN
r
01
r
02
Q
B
Q
C
Q
D
Q
A
1/2 MM74C73 1/2 MM74C73
Q
Q
Q
8-Channel Sequential Multiplexer/Demultiplexer Differential 4-Channel Sequential Multiplexer/Demultiplexer
All Leads
0.101 mm
0.004 IN
E
HC
D
e B A1 LĬ
4312 8756
131416 15 91012 11
Package Information
Vishay Siliconix
Document Number: 71194
02-Jul-01 www.vishay.com
1
SOIC (NARROW): 16ĆLEAD
JEDEC Part Number: MS-012
MILLIMETERS INCHES
Dim Min Max Min Max
A1.35 1.75 0.053 0.069
A10.10 0.20 0.004 0.008
B0.38 0.51 0.015 0.020
C0.18 0.23 0.007 0.009
D9.80 10.00 0.385 0.393
E3.80 4.00 0.149 0.157
e1.27 BS C 0.050 BSC
H5.80 6.20 0.228 0.244
L0.50 0.93 0.020 0.037
Ĭ0_8_0_8_
ECN: S-03946—Rev. F, 09-Jul-01
DWG: 5300
E1E
Q1
A
L
A1
e1B
B1
S
CeA
D
15°
MAX
12345678
16 15 14 13 12 11 10 9
Package Information
Vishay Siliconix
Document Number: 71261
06-Jul-01 www.vishay.com
1
PDIP: 16ĆLEAD
MILLIMETERS INCHES
Dim Min Max Min Max
A3.81 5.08 0.150 0.200
A10.38 1.27 0.015 0.050
B0.38 0.51 0.015 0.020
B10.89 1.65 0.035 0.065
C0.20 0.30 0.008 0.012
D18.93 21.33 0.745 0.840
E7.62 8.26 0.300 0.325
E15.59 7.11 0.220 0.280
e12.29 2.79 0.090 0.110
eA7.37 7.87 0.290 0.310
L2.79 3.81 0.110 0.150
Q11.27 2.03 0.050 0.080
S0.38 1.52 .015 0.060
ECN: S-03946—Rev. D, 09-Jul-01
DWG: 5482
Vishay Siliconix
Package Information
Document Number: 74417
23-Oct-06
www.vishay.com
1
Symbols
DIMENSIONS IN MILLIMETERS
Min Nom Max
A - 1.10 1.20
A1 0.05 0.10 0.15
A2 - 1.00 1.05
B 0.22 0.28 0.38
C - 0.127 -
D 4.90 5.00 5.10
E 6.10 6.40 6.70
E1 4.30 4.40 4.50
e-0.65-
L 0.50 0.60 0.70
L1 0.90 1.00 1.10
y--0.10
θ10°3°6°
ECN: S-61920-Rev. D, 23-Oct-06
DWG: 5624
TSSOP: 16-LEAD
PAD Pattern
www.vishay.com Vishay Siliconix
Revision: 02-Sep-11 1Document Number: 63550
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
RECOMMENDED MINIMUM PAD FOR TSSOP-16
0.281
(7.15)
Recommended Minimum Pads
Dimensions in inches (mm)
0.171
(4.35)
0.055
(1.40)
0.012
(0.30)
0.026
(0.65)
0.014
(0.35)
0.193
(4.90)
Application Note 826
Vishay Siliconix
www.vishay.com Document Number: 72608
24 Revision: 21-Jan-08
APPLICATION NOTE
RECOMMENDED MINIMUM PADS FOR SO-16
RECOMMENDED MINIMUM PADS FOR SO-16
0.246
(6.248)
Recommended Minimum Pads
Dimensions in Inches/(mm)
0.152
(3.861)
0.047
(1.194)
0.028
(0.711)
0.050
(1.270)
0.022
(0.559)
0.372
(9.449)
Return to Index
Return to Index
Legal Disclaimer Notice
www.vishay.com Vishay
Revision: 08-Feb-17 1Document Number: 91000
Disclaimer
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