BYY57A / BYY58A
50A Silicon Power Rectifier Diode
Part no.
Description
The BYY57A/58A are hermetically sealed 50A-
diodes, which are available in different reverse
voltage classes up to 800V.
The diodes can be delivered with limited forward
voltage and reverse current differences for
parallel connecting in rectifier stacks and back-
off-diodes
Features
• Forward current 50A
• Reverse voltage 75V – 800V
• Hermetic press-fit package
• Available in different modifications of the
package
Applications
• Power supplies
• Rectifier diode in car generators
• Rectifier bridges/stacks
• Back-off-diodes
Pinout details
BYY57A: 1 – cathode; 2 - anode
BYY58A: 1 – anode; 2 - cathode
Typical application circuit
Six pulse
bridge
connection ~ ~ ~
3 x BYY57A-700 3 x BYY58A-700
+ -
1
2
Ordering information
Device Quantity per box Options
BYY57A-75; …; BYY57A-800 500
BYY58A-75; …; BYY58A-800 500
The package quantities for the different package
modifications are included in
“PressFitPackageModifications.pdf”
Device marking
Devices are identified by type. Colour of marking: BYY57A- black, BYY58A – red
422........................................……. date code 422 = 2004 week 22
ZETEX
BYY57...……………………………... diode type
A400 ……………………………….. 50A diode / repetitive peak reverse voltage VRRM (in V) 400
Issue 2 – November 2006 1 www.zetex.com
© Zetex Semiconductors plc 2006
BYY57A / BYY58A
Absolute maximum ratings (at Tamb = 25°C unless otherwise stated)
Parameter Symbol Unit Test condition
BYY57A-75 BYY58A-75 75
BYY57A-100 BYY58A-100 100
BYY57A-150 BYY58A-150 150
BYY57A-200 BYY58A-200 200
BYY57A-300 BYY58A-300 300
BYY57A-400 BYY58A-400 400
BYY57A-500 BYY58A-500 500
BYY57A-600 BYY58A-600 600
BYY57A-700 BYY58A-700 700
Repetitive
peak
reverse
voltage
BYY57A-800 BYY58A-800
VRRM
800
V Tc = 150°C
Forward current, arithmetic value IFAV 50 A
900 half-sine wave,
≤ 10 ms
Surge forward current IFSM
800
A TJ = 175°C half-sine
wave, ≤ 10 ms
4050 half-sine wave,
≤ 10 ms
Maximum rated value ∫i²dt
3200
A²s TJ = 175°C half-sine
wave, ≤ 10 ms
Repetitive peak forward current IFRM=π*IFAV 157 A f = >15 Hz
Effective forward current IFRMS 78 A
Junction temperature TJmax 200 °C
Storage temperature range Tstg - 50 to + 175 °C
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BYY57A / BYY58A
Thermal resistance
Parameter Symbol Value Unit
Junction to case RθJC 0.8 °C/W
Thermal characteristics
Forw ard current derating diagram
200°C
164°C
0
10
20
30
40
50
60
-50 0 50 100 150 200 250
TC (°C)
IF (A)
Electrical characteristics (at Tamb = 25°C unless otherwise stated)
Forward voltage characteristic
0
5
10
15
20
25
30
35
40
45
50
55
0,75 0,8 0,85 0,9 0,95 1 1,05
VF (V)
IF (A)
Issue 2 – November 2006 3 www.zetex.com
© Zetex Semiconductors plc 2006
BYY57A / BYY58A
Electrical characteristics (at Tamb = 25°C unless otherwise stated)
Parameter Symbol Min. Typ. Max. Unit Test contitions
Forward
voltage
BYY57A-75...800
BYY58A-75...800 VF- 1.05 1.15 V
IF = 50 A,
measuring time
10ms (half-sine
wave)
BYY57A-75...800
BYY58A-75...800 VF-
0.810
- V
IF = 20 A,
measuring time
10ms (half-sine
wave),TJ = 150°
Forward
voltage
(information
values) BYY57A-75...800
BYY58A-75...800 VF- - 1.2 V IF = 75 A
BYY57A-75...150
BYY58A-75...150 - - 3
BYY57A-200...800
BYY58A-200...800
IRRM
- - 1.5
mA TJ = 150°C, at
VRRM
BYY57A-75...400
BYY58A-75...400 - - 0.25
Reverse
current
BYY57A-500...800
BYY58A-500...800
IRRM
- - 0.1
mA at VRRM
Threshold voltage (information
value) V(FO) - 0.66 - V TJ = 175°C
Slope resistance (information
value) rF- 4.5 - mΩ T
J = 175°C
Options: Electrical characteristics for parallel connecting
(at Tamb = 25°C unless otherwise stated)
Option Parameter Symbol Min. Typ. Max. Unit Test contitions
1 Forward voltage
difference in one
category of forward
voltage
∆VF- - 0.05 V IF = 50 A, measuring
time 10ms (half-sine
wave)
2 Reverse current in one
category of forward
voltage (only for
BYY57A-300…800 and
BYY58A-300…800)
IR- - 0.01 mA at VRRM
Issue 2 – November 2006 4 www.zetex.com
© Zetex Semiconductors plc 2006
BYY57A / BYY58A
Packaging details
Package dimensions
Dimensions in millimeters are control dimensions, dimensions in inches are approximate
DIM Millimeters Inches
MIN TYP MAX MIN TYP MAX
A 15,00 15,50 16,00 0,591 0,610 0,630
A1 5,90 6,10 6,30 0,232 0,240 0,248
A2 2,10 2,30 2,50 0,083 0,091 0,098
b 3,50 3,80 4,10 0,138 0,150 0,161
D 15,50 15,70 15,90 0,610 0,618 0,626
D1 12,75 12,80 12,85 0,502 0,504 0,506
D2 12,30 12,50 12,70 0,484 0,492 0,500
L 3,00 3,50 4,00 0,118 0,138 0,157
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Zetex Semiconductors plc
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