1. Product profile
1.1 General description
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a very small
SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package.
NPN complement: PBSS4160U.
1.2 Features
nLow collector-emitter saturation voltage VCEsat
nHigh collector current capability IC and ICM
nHigh collector current gain (hFE) at high IC
nHigh efficiency due to less heat generation
nSmaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
nHigh voltage DC-to-DC conversion
nHigh voltage MOSFET gate driving
nHigh voltage motor control
nHigh voltage power switches (e.g. motors, fans)
nAutomotive applications
1.4 Quick reference data
[1] Device mounted on a ceramic PCB, Al2O3, standard footprint.
[2] Pulse test: tp≤300 µs; δ≤0.02.
PBSS5160U
60 V, 1 A PNP low VCEsat (BISS) transistor
Rev. 04 — 2 October 2008 Product data sheet
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VCEO collector-emitter voltage open base - - −60 V
ICcollector current [1] --−1A
ICM peak collector current single pulse;
tp≤1ms --−2A
RCEsat collector-emitter saturation
resistance IC=−1A;
IB=−100 mA [2] - 255 340 mΩ
PBSS5160U_4 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 04 — 2 October 2008 2 of 14
NXP Semiconductors PBSS5160U
60 V, 1 A PNP low VCEsat (BISS) transistor
2. Pinning information
3. Ordering information
4. Marking
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
5. Limiting values
Table 2. Pinning
Pin Description Simplified outline Graphic symbol
1 base
2 emitter
3 collector
12
3
sym013
3
2
1
Table 3. Ordering information
Type number Package
Name Description Version
PBSS5160U SC-70 plastic surface-mounted package; 3 leads SOT323
Table 4. Marking codes
Type number Marking code[1]
PBSS5160U 53*
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VCBO collector-base voltage open emitter - −80 V
VCEO collector-emitter voltage open base - −60 V
VEBO emitter-base voltage open collector - −5V
ICcollector current [1] -−0.7 A
[2] -−0.86 A
[3] -−1A
ICM peak collector current single pulse;
tp≤1ms -−2A
IBbase current - −300 mA
IBM peak base current single pulse;
tp≤1ms -−1A
PBSS5160U_4 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 04 — 2 October 2008 3 of 14
NXP Semiconductors PBSS5160U
60 V, 1 A PNP low VCEsat (BISS) transistor
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
[3] Device mounted on a ceramic PCB, Al2O3, standard footprint.
Ptot total power dissipation Tamb ≤25 °C[1] - 250 mW
[2] - 350 mW
[3] - 415 mW
Tjjunction temperature - 150 °C
Tamb ambient temperature −65 +150 °C
Tstg storage temperature −65 +150 °C
(1) Ceramic PCB, Al2O3, standard footprint
(2) FR4 PCB, mounting pad for collector 1 cm2
(3) FR4 PCB, standard footprint
Fig 1. Power derating curves
Table 5. Limiting values
…continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
006aaa501
Tamb (°C)
0 16012040 80
0.2
0.3
0.1
0.4
0.5
Ptot
(W)
0
(3)
(2)
(1)
PBSS5160U_4 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 04 — 2 October 2008 4 of 14
NXP Semiconductors PBSS5160U
60 V, 1 A PNP low VCEsat (BISS) transistor
6. Thermal characteristics
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
[3] Device mounted on a ceramic PCB, Al2O3, standard footprint.
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Rth(j-a) thermal resistance from
junction to ambient in free air [1] - - 500 K/W
[2] - - 357 K/W
[3] - - 301 K/W
Rth(j-sp) thermal resistance from
junction to solder point - - 150 K/W
FR4 PCB, standard footprint
Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
006aaa502
10−51010−2
10−4102
10−1tp (s)
10−3103
1
102
10
103
Zth(j-a)
(K/W)
1
0.10
0.05
0.02
0.01
0
δ = 1
0.75
0.50 0.33
0.20
PBSS5160U_4 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 04 — 2 October 2008 5 of 14
NXP Semiconductors PBSS5160U
60 V, 1 A PNP low VCEsat (BISS) transistor
FR4 PCB, mounting pad for collector 1 cm2
Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
Ceramic PCB, Al2O3, standard footprint
Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
006aaa503
10−51010−2
10−4102
10−1tp (s)
10−3103
1
102
10
103
Zth(j-a)
(K/W)
1
0.20
0.10
0.05
0.02
0.01
0
δ = 1
0.75
0.50 0.33
006aaa504
10−51010−2
10−4102
10−1tp (s)
10−3103
1
102
10
103
Zth(j-a)
(K/W)
1
0.20
0.10
0.05
0.02
0.01
0
δ = 1 0.75
0.50 0.33
PBSS5160U_4 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 04 — 2 October 2008 6 of 14
NXP Semiconductors PBSS5160U
60 V, 1 A PNP low VCEsat (BISS) transistor
7. Characteristics
[1] Pulse test: tp≤300 µs; δ≤0.02.
Table 7. Characteristics
T
amb
=25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
ICBO collector-base cut-off
current VCB =−60 V; IE=0A - - −100 nA
VCB =−60 V; IE=0A;
Tj= 150 °C--−50 µA
ICES collector-emitter cut-off
current VCE =−60 V; VBE =0V - - −100 nA
IEBO emitter-base cut-off
current VEB =−5 V; IC=0A - - −100 nA
hFE DC current gain VCE =−5 V; IC=−1 mA 200 350 -
VCE =−5 V; IC=−500 mA [1] 150 250 -
VCE =−5 V; IC=−1A [1] 100 160 -
VCEsat collector-emitter
saturation voltage IC=−100 mA; IB=−1mA - −110 −175 mV
IC=−500 mA; IB=−50 mA - −135 −180 mV
IC=−1 A; IB=−100 mA [1] -−255 −340 mV
VBEsat base-emitter saturation
voltage IC=−1 A; IB=−50 mA - −0.95 −1.1 V
RCEsat collector-emitter
saturation resistance IC=−1 A; IB=−100 mA [1] - 255 340 mΩ
VBEon base-emitter turn-on
voltage IC=−1 A; VCE =−5V - −0.82 −0.9 V
tddelay time IC=−0.5 A; IBon =−25 mA;
IBoff =25mA -11-ns
trrise time - 30 - ns
ton turn-on time - 41 - ns
tsstorage time - 205 - ns
tffall time - 55 - ns
toff turn-off time - 260 - ns
fTtransition frequency VCE =−10 V; IC=−50 mA;
f = 100 MHz 150 185 - MHz
Cccollector capacitance VCB =−10 V; IE=i
e=0A;
f=1MHz - 9 15 pF
PBSS5160U_4 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 04 — 2 October 2008 7 of 14
NXP Semiconductors PBSS5160U
60 V, 1 A PNP low VCEsat (BISS) transistor
VCE =−5V
(1) Tamb = 100 °C
(2) Tamb =25°C
(3) Tamb =−55 °C
Tamb =25°C
Fig 5. DC current gain as a function of collector
current; typical values Fig 6. Collector current as a function of
collector-emitter voltage; typical values
VCE =−5V
(1) Tamb =−55 °C
(2) Tamb =25°C
(3) Tamb = 100 °C
IC/IB=20
(1) Tamb =−55 °C
(2) Tamb =25°C
(3) Tamb = 100 °C
Fig 7. Base-emitter voltage as a function of collector
current; typical values Fig 8. Base-emitter saturation voltage as a function
of collector current; typical values
006aaa474
200
400
600
hFE
0
IC (mA)
−10−1−104
−103
−1−102
−10
(1)
(2)
(3)
006aaa478
VCE (V)
0−5−3−1−2−4
−0.8
−1.2
−0.4
−1.6
−2.0
IC
(A)
0.0
IB (mA) = −35.0
−31.5
−28.0
−24.5
−21.0 −17.5
−14.0
−10.5
−7.0
−3.5
006aaa476
−0.6
−0.4
−0.8
−1.0
VBE
(V)
−0.2
IC (mA)
−10−1−104
−103
−1−102
−10
(1)
(2)
(3)
006aaa477
−0.5
−0.7
−0.3
−0.9
−1.1
VBEsat
(V)
−0.1
IC (mA)
−10−1−104
−103
−1−102
−10
(1)
(2)
(3)
PBSS5160U_4 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 04 — 2 October 2008 8 of 14
NXP Semiconductors PBSS5160U
60 V, 1 A PNP low VCEsat (BISS) transistor
IC/IB=20
(1) Tamb = 100 °C
(2) Tamb =25°C
(3) Tamb =−55 °C
Tamb =25°C
(1) IC/IB= 100
(2) IC/IB=50
(3) IC/IB=10
Fig 9. Collector-emitter saturation voltage as a
function of collector current; typical values Fig 10. Collector-emitter saturation voltage as a
function of collector current; typical values
IC/IB=20
(1) Tamb = 100 °C
(2) Tamb =25°C
(3) Tamb =−55 °C
Tamb =25°C
(1) IC/IB= 100
(2) IC/IB=50
(3) IC/IB=10
Fig 11. Collector-emitter saturation resistance as a
function of collector current; typical values Fig 12. Collector-emitter saturation resistance as a
function of collector current; typical values
006aaa475
IC (mA)
−10−1−104
−103
−1−102
−10
−10−1
−1
VCEsat
(V)
−10−2
(1)
(2)
(3)
006aaa480
IC (mA)
−10−1−104
−103
−1−102
−10
−10−1
−1
VCEsat
(V)
−10−2
(1)
(2)
(3)
006aaa479
IC (mA)
−10−1−104
−103
−1−102
−10
1
10
102
103
RCEsat
(Ω)
10−1
(1)
(2)
(3)
006aaa481
IC (mA)
−10−1−104
−103
−1−102
−10
1
10
102
103
RCEsat
(Ω)
10−1
(1)
(2)
(3)
PBSS5160U_4 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 04 — 2 October 2008 9 of 14
NXP Semiconductors PBSS5160U
60 V, 1 A PNP low VCEsat (BISS) transistor
8. Test information
Fig 13. BISS transistor switching time definition
IC=−0.5 A; IBon =−25 mA; IBoff = 25 mA; R1 = open; R2 = 100 Ω; RB= 300 Ω; RC=20Ω
Fig 14. Test circuit for switching times
006aaa266
−IBon (100 %)
−IB
input pulse
(idealized waveform)
−IBoff
90 %
10 %
−IC (100 %)
−IC
tdton
90 %
10 %
tr
output pulse
(idealized waveform)
tf
t
ts
toff
RC
R2
R1
DUT
mgd624
Vo
RB(probe)
450 Ω
(probe)
450 Ω
oscilloscope oscilloscope
VBB
VI
VCC
PBSS5160U_4 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 04 — 2 October 2008 10 of 14
NXP Semiconductors PBSS5160U
60 V, 1 A PNP low VCEsat (BISS) transistor
9. Package outline
10. Packing information
[1] For further information and the availability of packing methods, see Section 14.
Fig 15. Package outline SOT323 (SC-70)
04-11-04Dimensions in mm
0.45
0.15
1.1
0.8
2.2
1.8
2.2
2.0 1.35
1.15
1.3
0.4
0.3 0.25
0.10
12
3
Table 8. Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.
[1]
Type number Package Description Packing quantity
3000 10000
PBSS5160U SOT323 4 mm pitch, 8 mm tape and reel -115 -135
PBSS5160U_4 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 04 — 2 October 2008 11 of 14
NXP Semiconductors PBSS5160U
60 V, 1 A PNP low VCEsat (BISS) transistor
11. Soldering
Fig 16. Reflow soldering footprint SOT323 (SC-70)
Fig 17. Wave soldering footprint SOT323 (SC-70)
solder lands
solder resist
occupied area
solder paste
sot323_fr
2.65
2.35 0.6
(3×)
0.5
(3×)
0.55
(3×)
1.325
1.85
1.3
3
2
1
Dimensions in mm
sot323_fw
3.65 2.1
1.425
(3×)
4.6
09
(2×)
2.575
1.8
solder lands
solder resist
occupied area
preferred transport
direction during soldering
Dimensions in mm
PBSS5160U_4 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 04 — 2 October 2008 12 of 14
NXP Semiconductors PBSS5160U
60 V, 1 A PNP low VCEsat (BISS) transistor
12. Revision history
Table 9. Revision history
Document ID Release date Data sheet status Change notice Supersedes
PBSS5160U_4 20081002 Product data sheet - PBSS5160U_3
Modifications: •The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
•Legal texts have been adapted to the new company name where appropriate.
•Figure 9: amended
•Section 13 “Legal information”: updated
PBSS5160U_3 20050811 Product data sheet - PBSS5160U_2
PBSS5160U_2 20040809 Objective data sheet - PBSS5160U_1
PBSS5160U_1 20040503 Objective data sheet - -
PBSS5160U_4 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 04 — 2 October 2008 13 of 14
NXP Semiconductors PBSS5160U
60 V, 1 A PNP low VCEsat (BISS) transistor
13. Legal information
13.1 Data sheet status
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
13.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
13.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
13.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
14. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Document status[1][2] Product status[3] Definition
Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.
NXP Semiconductors PBSS5160U
60 V, 1 A PNP low VCEsat (BISS) transistor
© NXP B.V. 2008. All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 2 October 2008
Document identifier: PBSS5160U_4
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
15. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2
4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
6 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4
7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 6
8 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 9
9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10
10 Packing information. . . . . . . . . . . . . . . . . . . . . 10
11 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
12 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 12
13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 13
13.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 13
13.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
13.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 13
13.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 13
14 Contact information. . . . . . . . . . . . . . . . . . . . . 13
15 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
