December 2009 Doc ID 5309 Rev 5 1/11
11
TIP122FP
TIP127FP
Complementary power Darlington transistors
Features
■Low collector-emitter saturation voltage
■Complementary NPN - PNP transistors
■TO-220FP isolated package UL compliant
Application
■General purpose linear and switching
Description
The devices are manufactured in planar
technology with “base island” layout and
monolithic Darlington configuration. The resulting
transistors show exceptional high gain
performance coupled with very low saturation
voltage.
Figure 1. Internal schematic diagrams
TO-220FP
12
3
NPN: R1 = 7 kΩPNP: R1 = 16 kΩ
R2 = 60 Ω
R2 = 70 Ω
Table 1. Device summary
Order codes Marking Polarity Package Packaging
TIP122FP TIP122FP NPN TO-220FP Tube
TIP127FP TIP127FP PNP
www.st.com
Electrical ratings TIP122FP, TIP127FP
2/11 Doc ID 5309 Rev 5
1 Electrical ratings
Note: For PNP types voltage and current values are negative.
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
VCBO Collector-base voltage (IE = 0) 100 V
VCEO Collector-emitter voltage (IB = 0) 100 V
VEBO Emitter-base voltage (IC = 0) 5 V
ICCollector current 5 A
ICM Collector peak current 8 A
IBBase current 0.12 A
PTOT
Total dissipation at Tc ≤ 25 °C
Tamb ≤ 25 °C
30
2W
TSTG Storage temperature -65 to 150 °C
TJMax. operating junction temperature 150
Table 3. Thermal data
Symbol Parameter Value Unit
RthJC Thermal resistance junction-case max. 4.2 °C/W
RthJA Thermal resistance junction-ambient max. 62.5
TIP122FP, TIP127FP Electrical characteristics
Doc ID 5309 Rev 5 3/11
2 Electrical characteristics
Tcase = 25 °C unless otherwise specified.
Note: For PNP types voltage and current values are negative.
Table 4. Electrical characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
ICEO
Collector cut-off current
(IB = 0) VCE = 50 V 0.5 mA
ICBO
Collector cut-off current
(IB = 0) VCE = 100 V 0.2 mA
IEBO
Emitter cut-off current
(IC = 0) VEB = 5 V 2 mA
VCEO(sus)(1)
1. Pulse test: pulse duration ≤ 300 µs, duty cycle ≤ 2 %.
Collector-emitter
sustaining voltage
(IB = 0)
IC = 30 mA 100 V
VCE(sat)(1) Collector-emitter
saturation voltage
IC = 3 A IB = 12 mA
IC = 5 A IB = 20 mA
2
4
V
V
VBE(on)(1) Base-emitter on voltage IC = 3 A VCE = 3 V 2.5 V
hFE(1) DC current gain IC = 0.5 A VCE = 3 V
IC = 3 A VCE = 3 V
1000
1000
Electrical characteristics TIP122FP, TIP127FP
4/11 Doc ID 5309 Rev 5
2.1 Electrical characteristics (curves)
Figure 2. Safe operating area Figure 3. Derating curve
Figure 4. DC current gain for NPN type Figure 5. DC current gain for PNP type
Figure 6. Collector-emitter saturation voltage
for NPN type
Figure 7. Collector-emitter saturation voltage
for PNP type
hFE
1000
100
10
0.01 Ic(A)
0.1 1
VCE= 3 V
Tj= -40 °C
Tj= 25 °C
Tj=125 °C
AM00696v1 hFE
1000
100
10
-0.01 Ic(A)
-0.1 -1
Tj= -40 °C
Tj= 25 °C
Tj=125 °C
VCE= -3 V
AM00697v1
VCE(sat)
1
0.6
0.2
0.1 Ic(A)
1
hFE= 250
Tj= -40 °C
Tj= 25 °C
Tj=125 °C
(V)
1.4
AM00698v1 VCE(sat)
-1
-0.6
-0.2
-0.1 Ic(A)
-1
hFE= 250
Tj= -40 °C
Tj= 25 °C
Tj=125 °C
(V)
-1.4
AM00699v1
TIP122FP, TIP127FP Electrical characteristics
Doc ID 5309 Rev 5 5/11
Figure 8. Base-emitter saturation voltage for
NPN type
Figure 9. Base-emitter saturation voltage for
PNP type
Figure 10. Base-emitter on voltage for NPN
type
Figure 11. Base-emitter on voltage for PNP
type
Figure 12. Switching time on resistive load for
NPN type (on)
Figure 13. Switching time on resistive load for
PNP type (on)
VBE(sat)
1.5
1.0
0.5
0.1 Ic(A)
1
hFE= 250
Tj= -40 °C
Tj= 25 °C
Tj=125 °C
(V)
2.0
AM00700v1 VBE(sat)
-1.5
-1.0
-0.5
-0.1 Ic(A)
-1
hFE= 250
Tj= -40 °C
Tj= 25 °C
Tj=125 °C
(V)
-2.0
AM03261v1
VBE(on)
1.5
1.0
0.5
0.1 Ic(A)
1
VCE= 3 V
Tj= -40 °C
Tj= 25 °C
Tj=125 °C
(V)
2.0
AM03262v1 VBE(on)
-1.5
-1.0
-0.5
- 0.1 Ic(A)
-1
Tj= -40 °C
Tj= 25 °C
Tj=125 °C
(V)
-2.0 VCE= -3 V
AM03263v1
t(ns)
100
10
0 Ic(A)
2
Delay time
Rise time
1 3 5
4
Vcc= 30 V
hFE=250
Vbeo= - 5 V
Ibon= - Ibo
AM03264v1
t(ns)
100
10
0 Ic(A)
-2
Delay time
Rise time
-1 -3 -5
-4
Vcc= -30 V
hFE=250
Vbeo= 5 V
-Ibon= Ibo
AM03265v1
Electrical characteristics TIP122FP, TIP127FP
6/11 Doc ID 5309 Rev 5
Figure 14. Switching time on resistive load for
NPN type (off)
Figure 15. Switching time on resistive load for
PNP type (off)
Figure 16. Capacitances for NPN type Figure 17. Capacitances for PNP type
t(ns)
1000
100
0 Ic(A)
2
Storage time
Fall time
1 3 5
4
Vcc= 30 V
hFE=250
Vbeo= - 5 V
Ibon= - Ibo
AM03266v1
t(ns)
1000
100
0 Ic(A)
-2
Storage time
Fall time
-1 -3 -5
-4
Vcc= -30 V
hFE=250
Vbeo= 5 V
-Ibon= Ibo
AM03267v1
C(pF)
100
10
0.01 VR(V)
1
0.1 10
F= 0.1 MHz
CCB
CEB
AM03269v1
C(pF)
100
10
0.01 VR(V)
1
0.1 10
F= 0.1 MHz
CCB
CEB
AM03268v1
TIP122FP, TIP127FP Test circuits
Doc ID 5309 Rev 5 7/11
3 Test circuits
Figure 18. Resistive load switching for NPN type
1. Fast electronic switch
2. Non-inductive resistor
Figure 19. Resistive load switching for PNP type
1. Fast electronic switch
2. Non-inductive resistor
Package mechanical data TIP122FP, TIP127FP
8/11 Doc ID 5309 Rev 5
4 Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
TIP122FP, TIP127FP Package mechanical data
Doc ID 5309 Rev 5 9/11
Figure 20. TO-220FP drawing
Table 5. TO-220FP mechanical data
Dim.
mm
Min. Typ. Max.
A4.4 4.6
B2.5 2.7
D 2.5 2.75
E0.45 0.7
F0.75 1
F1 1.15 1.70
F2 1.15 1.70
G4.95 5.2
G1 2.4 2.7
H 10 10.4
L2 16
L3 28.6 30.6
L4 9.8 10.6
L5 2.9 3.6
L6 15.9 16.4
L7 9 9.3
Dia 3 3.2
7012510_Rev_K
A
B
H
Dia
L7
D
E
L6 L5
L2
L3
L4
F1 F2
F
G
G1
TIP122FP, TIP127FP
Doc ID 5309 Rev 5 11/11
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