Approved | Checked | Designed DEVELOPMENT SPECIFICATION Tentative PAN: LNJ406K5YUX we T Y Pp E | Amber Light Emitting Diode APPLICATION | Indicators MA TERI A L | GaAsP OU T LIN E |Attached ABSOLUTE P Tp Tene Vp Topr Tstg MAX IMUM 60 60 20 4 -25~+85 -30~+100 R A T IN G5 m mA mA Cc Cc CONDITION|/!Ta=25+3 C Test Specification Item Symbol} Condition Typ anit Unit Min Max Forward Voltage| Vs T,=10 mA 2.0 2.6 V Reverse Leakage Current Ip Vez 4 10} pA Luminous Intensity} Io, T,-=10 mA + DC 1.0 0.4 med Peak Emission Wavelength | Ap T,-=10 mA + DC 590 nm Spectral Line Half Width | 44 1,-=10 mA DC 30 nm % + The Condition of I, is duty 10 %, Pulse width 1 ms Please contact the Panasonic local office if you design at low current (below 1mA DC) or pulse current operation and have any questions. NOTE 1. Compositions of the lead --- Cu/Ni/Au plating 2, Soldering conditions. Refer to Handling note. % Care should be taken that soldering is done within 3-days after opening the dry package and reel. 4, Package:Light yellow diffusion type. 5.Circuit to operate LED. x RASA S) wah (A)Recommended circuit. . [| HAAS ae | s- (B) The difference of brightness /\/\\/-hH eb between the LED could be found due to the V, characteristics (A) (B) of each LED. Oot. 27, 2001 Panasonic KAGOSHIMA MATSUSHITA ELECTRONICS CO. , LTD KB-H-022-0188Aoproved|Checked| Designed] DEVELOPMENT SPECIFICATION a Tentative at P/N: LNJASBKSYUX lo - Ta =a 100 se E ~ > 50 ~ . 500 30 . c 300 r + c c 113) 10 i o o 100 2 o 0 & 50 3 = D . 2 30 a 2 > ; 7 I Oo es 10 LL o -20 Q 29 40 60 80 100 Forward Voltage Ve (V) Ambient Temperature Ta ('C) lo - I, lp 7 Ta 25 5.0 < _ 3.0 = 20 wu Lo) u 1.9 - _ 15 > @.5 c _ oO 1 c t- 2 > 10 c O 0.1 UD > ao 2 0.05 o c > 5 z 3 3 QO - LL a.o1 0 a 1 3 5 id 30 50 100 0 20 A0 60 BO 100 Forward Current J, (mA) Ambient Temperature Ta (C) Oct.27.2e00)1 Panasonic KAGOSHIMA MATSUSHITA ELECTRONICS CoO.. LTD. KB-H-022-0:8BApproved|Checked|Designed wv DEVELOPMENT SPECIFICATION Tentative P/N: LNJACGBEKSYUX _ t20 oa > 7 100 a3] c o c &a w 2 o 60 co Ee => | 40 Qo > w 2g ath) ao 0 Relative Luminous Intensity Wavelength Characteristics ipz=eOmA Ta=e25t IL | | Hi t\ \ / \ 4 Nw 550 600 650 700 Wavelength (nm) Derective Characteristics 90 oo 8680 60 AD Oct.27.2001 Panasonic KAGOSHIMA MATSUSHITA ELECTRONICS CO.. LTD KB-H-d22-03 8BApproved] Checked |Des i gned ) DEVELOPMENT SPECIFICATION (OUTLINE) { P/N: wn 7 io ran 5 5 a, co o ! | o = \ oi - + CG, Gzo.2 ole ~al|2 CATHODE ANODE gor ANG W (NOTE) 1.Unit:mm 2.Tolerance unless specified is t0.e. 3.Measurement of the Package doesn t gete projection. 4.Corner of the package is R Q.2max. 5 Projection s tolerance of the package include is R O.2max.. Oct.e7.e001 PRIN ITAA RARE IIT TA COONEY 1 TES KR AR