OPTOELECTRONICS REFLECTIVE OBJECT SENSOR QRD1313 PIN 1 INDICATOR .083 (2.11) OPTICAL CENTERLINE SS IN - 240 (6.10) 120 (3.05) 4 _| L 173 (4.39) ! 183 (4.65) 1020 (0.51) SQ NOM 4PLCS -500 (12.7) | MIN 4 oLt .100 (2.54) tf } NOTE 4 }~.083 ( 2.11) 2 3 $T2173 NOTES: 1. PINS 2 AND 4 TYPICALLY 050" SHORTER THAN PINS 1 AND 3 2. DIMENSIONS ARE IN INCHES (mm). 3. TOLERANCE IS +.010 [.25] UNLESS OTHERWISE SPECIFIED. 4. THESE DIMENSIONS ARE CONTROLLED AT HOUSING SURFACE. The QRD1313 reflective sensors consists of an infrared emitting diode and an NPN silicon photodarlington mounted side by side in a black plastic housing. The on-axis radiation of the emitter and the on-axis response of the detector are both perpendicular to the face of the QRD1313. The photodarlington responds to radiation emitted from the diode only when a reflective object or surface is in the field of view of the detector. m@ Photodarlington output. = Unfocused for sensing diffused surfaces. = Low cost plastic housing. m Designed for paper path and other non-contact surface sensing.DPTOELECTAONICS REFLECTIVE OBJECT SENSOR Be ee Storage Temperature .0 cee eee ener ene eee e tn bebe e eet ete bn bene 40C to + 100C Operating Temperature 6.0.6 cen nee eee nena need reve teetenateee 40C to + 100C Soldering: Lead Temperature (Iron) 2.0... cee ene ented net e ener et eet ene tenn tetnenes 240C for 5 sec, (4 Lead Temperature (FIOW) 2.0.00. .00cnenee nee b detent teen eens 260C for 10 sec. 2 INPUT DIODE Continuous Forward Current 2.0.0.0 ce tenn en EERE DED E EERE ED EEE be ent d nbn en tee EEE nes 50 mA Reverse Voltage ...6 6.6 ee ete enter ened needed tree eens nbn ba neta 5.0 Volts Power Dissipation 0.0... ccc nee ene nn EEE nde nt ee tebe ene ene b tenes 100 mW OUTPUT DARLINGTON Collector-Emitter Voltage 0.0. n eee e renee Deere nee bebe beeen te tb ten eaeaes 15 Volts Emitter-Collector Voltage ... 2.0.6.6 needed ener nbc ete e btn en eee 5.0 Volts Power Dissipation 00... nL EE nner ened eee D Dede ened debe need tebe t eens 100 mw PARAMETER SYMBOL = . . TEST CONDITIONS INPUT DIODE Forward Voltage Ve 7=20mA Reverse Leakage Current la Va =2.0V OUTPUT DARLINGTON Collector-Emitter Breakdown |; = 100 nA, Ee = 0 Emitter-Collector Breakdown . |. = 100 nA, Ee = 0 Collector-Emitter Leakage Vee = 5.0 V, Ee =0 COUPLED On-State Collector Current |; = 20 MA, Vec = 5.0V, D = .050" ?) Crosstalk |; = 20 MA, Voc = 5.0V, Ee = 0" Saturation Voitage |; = 20 mA, |, = 2mA, D = .050"6 TES Derate power dissipation linearly 1.33 mW/C above 25C. . AMA flux is recommended. . Soldering iron ie" (1.6mm) minimum from housing. As long as leads are not under any stress or spring tension. Dis the distance from the sensor face to the reflective surface. . Crosstalk(lo) is the collector current measured with the indicated current on the input diode and with no reflective surface. . Measured using Eastman Kodak neutral white test card with 90% diffused reflecting as a reflecting surface. NOAA YP