TOSHIBA 29A1162 Transistor Unit in mm Silicon PNP Epitaxial Type (PCT Process) 9 59:3 Audio Frequency General Purpose 1. 520 $3 a0 <+__r} oe =g: . . . +o Amplifier Applications tH u N n 2 . : o Features So) 7 CL 7 om High Voltage and High Current. aoc a 3 | - Vogo = -80V (Min.), Ig = -150MA (Max.) * otrn e Excellent Np Linearity T - Neg (-0.1mA/heg (-2mA) = 0.95 (Typ.) my e High Hee ot os - hee = 70 ~ 400 b * Low Noise: NF = 1dB (Typ.), 10dB (Max.) f ' ) t a * Complementary to 2SC2712 j { T J Absolute Maximum Ratings (Ta = 25C) ef 1. EMITTER CHARACTERISTIC SYMBOL | RATING | UNIT 2. COLLECTOR Collector-Base Voltage Vepo 60 Vv 3. BASE Collector-Emitter Voltage Voeo -50 V JEDEC TO-236MOD Emilter-Base Voltage Vepo 5 y EIAJ - Collector Current le -150 mA Base Current lg -30 mA TOSHIBA 2-3F1A Collector Power Dissipation Ps 150 mw Weight: 0.012g Junction Temperature T 125 oof Storage Temperature Range Txtg -55 ~ 125 oof Electrical Characteristics (Ta = 25C) CHARACTERISTIC SYMBOL TEST CONDITION MIN. | TYP. MAX. | UNIT Collector Cut-off Current lepo Vog = ~50V, Ip = 0 - - 01 pA Emitter Cut-off Current lepg Veg = BV, Ic =0 - - 01 pA DE Current Gain Nee tNotey | Voce =-6V. Io = -2mA 70 - 400 Collector-Emitter Vogisay | Ip = -100mA, - -0.1 0.3 V Saturation Voltage lg = -10mA Transition Frequency in Veg =-10V, Ip =-1mA 80 - - MHz Collector Output Capacitance Cop Veg = -10V. tp =0, - 4 ? pF f=1MHz Marking os Type Name Noise Figure NF | Vop=-6V [Ig= -0.1mA - 10 10 aB a, bre Rank f= 1kiz, R= 10k22 |. O Note: hep Classification 0: 70 ~ 140, : 120 ~ 240 TOSHIBA AMERICA ELECTRONIC COMPONENTS, INC. 4 a2SA1162 Discrete Semiconductors COLLECTOR POWER DISSIPATION P. (mi) 64 lo Yee COMMON EMITTER i > Ta = 25% # < z Y & B g 2 < > x a 3 9 5 a 8 99S COLLECTOR-EMITTER VOLTAGE Vo, (V) 3 ES Vce(sot) 'c go> g 3 COMMON EMITTER # gy IoAg 10 > z. ee 5 a3 Ew a> Ot 3-45 -t -3-5 -10 100-300 COLLECTOR CURRENT Ip (mA) fr - Ic 2 F wm a z COMMON EMITTER - -_ oa seo Vog = -10V a - To = 250 & a : : a had # nO . a a E a i a3 1 3 a ee COLLECTOR CURRENT Ip (mA) Ta Pe 0 3 AMBIENT TEMPERATURE To (C) 50 7% 100 125 lc rE Oi -DS-O5 -1 3-5 ~-10) -W-0 COLLECTOR CURRENT Ic (mA) 'c COMMON EMITTER Igfg =10 Ta = 25T VBE(sat) Bi = 03-05 +1 3 -10 COLLECTOR CURRENT I (ma) lg pe COMMON EMITTER Vog = ~8V 0 02 BASE-EMITTER VOLTAGE Var (V) ~be DB O08 10 ala TOSHIBA AMERICA ELECTRONIC COMPONENTS, INC.