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Dear Customer,
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In data sheets and application notes which still contain NXP or Philips Semiconductors references, use
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Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on
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- © Nexperia B.V. (year). All rights reserved.
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1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23
(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
technology.
1.2 Features and benefits
AEC-Q101 qualified
Logic-level compatible
Trench MOSFET technology
Very fast switching
1.3 Applications
High-speed line driver
Low-side loadswitch
Relay driver
Switching circuits
1.4 Quick reference data
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.
2N7002P
60 V, 360 mA N-channel Trench MOSFET
Rev. 02 — 29 July 2010 Product data sheet
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VDS drain-source
voltage Tamb =25°C --60V
VGS gate-source
voltage -20 - 20 V
IDdrain current VGS =10V; T
amb =25°C [1] --360mA
Static characteristics
RDSon drain-source
on-state
resistance
VGS =10V; I
D=500mA;
Tj= 25 °C; pulsed; tp≤300 µs;
δ≤0.01
-11.6Ω
2N7002P All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 02 — 29 July 2010 2 of 15
NXP Semiconductors 2N7002P
60 V, 360 mA N-channel Trench MOSFET
2. Pinning information
3. Ordering information
4. Marking
[1] % = -: made in Hong Kong; % = p: made in Hong Kong; % = t: made in Malaysia; % = W: made in China
5. Limiting values
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.
Tabl e 2. Pinning information
Pin Symbol Description Simplified outline Graphi c sy mbol
1 G gate
SOT23 (TO-236AB)
2Ssource
3 D drain
12
3
S
D
G
m
bb076
Table 3. Ordering information
Type number Package
Name Description Version
2N7002P TO-236AB plastic surface-mounted package; 3 leads SOT23
Table 4. Marking codes
Type number Marking code[1]
2N7002P LW%
Table 5. Limiting values
In accordance with the Absolute Maxi mum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage Tamb =25°C - 60 V
VGS gate-source voltage -20 20 V
IDdrain current VGS =10V; T
amb =25°C [1] - 360 mA
VGS =10V; T
amb = 100 °C [1] - 280 mA
IDM peak drain current Tamb = 25 °C; single pulse; tp≤10 µs - 1.2 A
Ptot total power dissipation Tamb =25°C [2] - 350 mW
[1] - 420 mW
Tsp =25°C - 1140 mW
Tjjunction temperature - 150 °C
Tamb ambient temperature -55 150 °C
Tstg storage temperature -65 150 °C
Source-drain diode
ISsource current Tamb =25°C [1] - 360 mA
2N7002P All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 02 — 29 July 2010 3 of 15
NXP Semiconductors 2N7002P
60 V, 360 mA N-channel Trench MOSFET
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Fig 1. Normalized total power dissipation as a
function of ambient temperature Fig 2. Norma lized continuous drain current as a
function of ambient temperature
IDM = single pulse
(1) tp = 100 μs
(2) tp = 1 ms
(3) tp = 10 ms
(4) tp = 100 ms
(5) DC; Tsp = 25 °C
(6) DC; Tamb = 25 °C; drain mounting pad 1 cm2
Fig 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source
voltage
Tamb (°C)
−75 17512525 75−25
017aaa001
40
80
120
Pder
(%)
0
Tamb (°C)
−75 17512525 75−25
017aaa002
40
80
120
Ider
(%)
0
017aaa014
10
−1
10
−2
1
10
I
D
(A)
10
−3
V
DS
(V)
10
−1
10
2
101
(1)
(2)
(3)
(4)
(5)
(6)
2N7002P All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 02 — 29 July 2010 4 of 15
NXP Semiconductors 2N7002P
60 V, 360 mA N-channel Trench MOSFET
6. Thermal characteristics
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Rth(j-a) thermal resistance
from junction to
ambient
in free air [1] - 310 370 K/W
[2] - 260 300 K/W
Rth(j-sp) thermal resistance
from junction to solder
point
--115K/W
FR4 PCB, standard footprint
Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
FR4 PCB, mounting pad for drain 1 cm2
Fig 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
017aaa015
t
p
(s)
10
−3
10
2
10
3
10110
−2
10
−1
10
2
10
10
3
Z
th(j-a)
(K/W)
1
duty cycle = 1
0.75
0.5 0.33
0.25 0.2
0.1 0.05
0.02
0.01
0
017aaa016
t
p
(s)
10
−3
10
2
10
3
10110
−2
10
−1
10
2
10
10
3
Z
th(j-a)
(K/W)
1
duty cycle = 1
0.75
0.5 0.33
0.25 0.2
0.1 0.05
0.02
0.01
0
2N7002P All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 02 — 29 July 2010 5 of 15
NXP Semiconductors 2N7002P
60 V, 360 mA N-channel Trench MOSFET
7. Characteristics
Table 7. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
V(BR)DSS drain-source
breakdown voltage ID=10µA; V
GS =0V; T
j=25°C 60--V
VGSth gate-source threshold
voltage ID=250µA; V
DS =V
GS; Tj= 25 °C 1.1 1.75 2.4 V
IDSS drain leakage current VDS =60V; V
GS =0V; T
j=25°C --1µA
VDS =60V; V
GS =0V; T
j=150°C --10µA
IGSS gate leakage current VGS =20V; V
DS =0V; T
j= 25 °C - - 100 nA
VGS =-20V; V
DS =0V; T
j= 25 °C - - 100 nA
RDSon drain-source on-state
resistance VGS =5V; I
D= 50 mA; pulsed;
tp≤300 µs; δ≤0.01 ; Tj=25°C -1.32Ω
VGS =10V; I
D= 500 mA; pulsed;
tp≤300 µs; δ≤0.01 ; Tj=25°C -11.6Ω
gfs forward
transconductance VDS =10V; I
D= 200 mA; pulsed;
tp≤300 µs; δ≤0.01 ; Tj=25°C - 400 - mS
Dynamic characteristics
QG(tot) total gate charge ID=300mA; V
DS =30V; V
GS =4.5V;
Tj=25°C -0.60.8nC
QGS gate-source charge - 0.2 - nC
QGD gate-drain charge - 0.2 - nC
Ciss input capacitance VGS =0V; V
DS =10V; f=1MHz;
Tj=25°C - 3050pF
Coss output capacitance - 7 - pF
Crss reverse transfer
capacitance -4-pF
td(on) turn-on delay time VDS =50V; R
L= 250 Ω; VGS =10V;
RG(ext) =6Ω; Tj=25°C - 36ns
trrise time - 4 - ns
td(off) turn-off delay time - 10 20 ns
tffall time -5-ns
Source-drain diode
VSD source-drain voltage IS=115mA; V
GS =0V; T
j= 25 °C 0.47 0.75 1.1 V
2N7002P All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 02 — 29 July 2010 6 of 15
NXP Semiconductors 2N7002P
60 V, 360 mA N-channel Trench MOSFET
Tamb = 25 °C Tamb = 25 °C; VDS = 5 V
(1) minimum values
(2) typical values
(3) maximum values
Fig 6. Outp ut characteristics: dra in current as a
function of drain-source volta ge; typ ical values Fig 7. Sub-threshold drain current as a function of
gate-source voltage
Tamb = 25 °C
(1) VGS = 3.25 V
(2) VGS = 3.5 V
(3) VGS = 4 V
(4) VGS = 5 V
(5) VGS = 10 V
ID = 500 mA
(1) Tamb = 150 °C
(2) Tamb = 25 °C
Fig 8. Drain-source on-state resistance as a function
of drain current; typical values Fig 9. Drain-source on-state resistance as a function
of gate-source voltage; typical value s
VDS (V)
0.0 4.03.01.0 2.0
017aaa017
0.4
0.5
0.3
0.2
0.1
0.6
0.7
ID
(A)
0.0
3.5 V
VGS = 4.0 V
3.0 V
2.75 V
2.5 V
3.25 V
017aaa018
V
GS
(V)
0321
10
−4
10
−5
10
−3
I
D
(A)
10
−6
(2)(1) (3)
ID (A)
0.0 1.00.80.4 0.60.2
017aaa019
5.0
2.5
7.5
10.0
RDSon
(Ω)
0.0
(2)
(1)
(3) (4)
(5)
VGS (V)
0.0 10.08.04.0 6.02.0
017aaa020
2.0
4.0
6.0
RDSon
(Ω)
0.0
(1)
(2)
2N7002P All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 02 — 29 July 2010 7 of 15
NXP Semiconductors 2N7002P
60 V, 360 mA N-channel Trench MOSFET
VDS > ID × RDSon
(1) Tamb = 25 °C
(2) Tamb = 150 °C
Fig 10. Transfer characteristics: drain current as a
function of gate-source voltage; typical values Fig 11. Normalized drain-source on-state resistance as
a function of ambient temperature; typical
values
ID = 0.25 mA; VDS = VGS
(1) maximum values
(2) typical values
(3) minimum values
f = 1 MHz; VGS = 0 V
(1) Ciss
(2) Coss
(3) Crss
Fig 12. Gate-source threshold voltage as a function of
ambient temperature Fig 13. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
VGS (V)
0.0 5.04.02.0 3.01.0
017aaa021
0.4
0.6
0.2
0.8
1.0
ID
(A)
0.0
(1) (2)
(2) (1)
Tamb (°C)
−60 180120060
017aaa022
1.2
0.6
1.8
2.4
a
0.0
Tamb (°C)
−60 180120060
017aaa023
1.0
2.0
3.0
VGS(th)
(V)
0.0
(2)
(1)
(3)
017aaa024
VDS (V)
10−1102
101
10
102
C
(pF)
1
(2)
(1)
(3)
2N7002P All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 02 — 29 July 2010 8 of 15
NXP Semiconductors 2N7002P
60 V, 360 mA N-channel Trench MOSFET
ID = 300 mA; VDS = 30 V; Tamb = 25 °C
Fig 14. Gate-source voltage as a function of gate
charge; typical values Fig 15. Gate charge waveform definitions
VGS = 0 V
(1) Tamb = 150 °C
(2) Tamb = 25 °C
Fig 16. Source current as a functio n of so urce-drain voltage; typical va lues
QG (nC)
0.0 0.80.60.2 0.4
017aaa025
2.0
3.0
1.0
4.0
5.0
VGS
(V)
0.0
003aaa508
VGS
VGS(th)
QGS1 QGS2
QGD
VDS
QG(tot)
ID
QGS
V
GS(pl)
VSD (V)
0.0 1.20.80.4
017aaa026
0.4
0.8
1.2
IS
(A)
0.0
(1) (2)
2N7002P All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 02 — 29 July 2010 9 of 15
NXP Semiconductors 2N7002P
60 V, 360 mA N-channel Trench MOSFET
8. Test information
Fig 17. Duty cycle definition
t1
t2
P
t
006aaa812
duty cycle δ =
t1
t2
2N7002P All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 02 — 29 July 2010 10 of 15
NXP Semiconductors 2N7002P
60 V, 360 mA N-channel Trench MOSFET
9. Package outline
Fig 18. Package outline SOT23 (TO-236AB)
UNIT A1
max. bpcDE e1HELpQwv
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
04-11-04
06-03-16
IEC JEDEC JEITA
mm 0.1 0.48
0.38 0.15
0.09 3.0
2.8 1.4
1.2 0.95
e
1.9 2.5
2.1 0.55
0.45 0.1
0.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15
SOT23 TO-236AB
bp
D
e1
e
A
A1
Lp
Q
detail X
HE
E
wM
vMA
B
AB
0 1 2 mm
scale
A
1.1
0.9
c
X
12
3
Plastic surface-mounted package; 3 leads SOT2
3
2N7002P All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 02 — 29 July 2010 11 of 15
NXP Semiconductors 2N7002P
60 V, 360 mA N-channel Trench MOSFET
10. Soldering
Fig 19. Reflow soldering footprint for SOT23 (TO-236AB)
Fig 20. Wave soldering footprint for SOT23 (TO-236AB)
solder lands
solder resist
occupied are
a
solder paste
sot023_
fr
0.5
(3×)
0.6
(3×)
0.6
(3×)
0.7
(3×)
3
1
3.3
2.9
1.7
1.9
2
Dimensions in mm
solder lands
solder resist
occupied are
a
preferred transport direction during soldering
sot023_
fw
2.8
4.5
1.4
4
.6
1.4
(2×)
1.2
(2×)
2.2
2.6
Dimensions in mm
2N7002P All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 02 — 29 July 2010 12 of 15
NXP Semiconductors 2N7002P
60 V, 360 mA N-channel Trench MOSFET
11. Revision history
Table 8. Revision history
Document ID Release date Data sheet status Change notice Supersedes
2N7002P v.2 20100729 Product data sheet - 2N7002P_1
Modifications: •Correction of thermal values.
•Correction of various characteristics values including related graphs.
2N7002P_1 20100419 Product data sheet - -
2N7002P All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 02 — 29 July 2010 13 of 15
NXP Semiconductors 2N7002P
60 V, 360 mA N-channel Trench MOSFET
12. Legal information
12.1 Data sheet status
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term 'short data sheet' is explained in section "Definitions".
[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product
status information is available on the Internet at URL http://www.nxp.com.
12.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warrant ies as to t he accuracy or completeness of
information included herein and shall have no liab ility for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and tit le. A short data sh eet is intended
for quick reference only and shou ld not b e relied u pon to cont ain det ailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall pre va il.
Product specifica t io n — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to off er functions and qualities beyond those described in the
Product data sheet.
12.3 Disclaimers
Limited warranty and liability — Information in this document is be lieved to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warrant ies, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information.
In no event shall NXP Semiconductors be liable for any indirect, incidenta l ,
punitive, special or consequ ential damages (including - wit hout limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconduct ors’ aggregate and cumulat ive liability toward s
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semicondu ctors.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all informa tion supplied prior
to the publication hereof .
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in perso nal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liab ility for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for il lustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and ope ration of their applications
and products using NXP Semiconductors product s, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suit able and fit for the custome r’s applications and
products planned, as well as fo r the planned application and use of
customer’s third party customer(s). Custo mers should provide appropriate
design and operating safeguards to minimize the risks associated with t heir
applications and products.
NXP Semiconductors does not accept any liabili ty related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party custo m er(s). Customer is responsible for doing all necessary
testing for the customer’s applications and pro ducts using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by cust omer’s third party
customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individua l agreement. In case an individual
agreement is concluded only the ter ms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
Document status[1][2] Product status[3] Definition
Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] dat a sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This doc ument contains the product specification.
2N7002P All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 02 — 29 July 2010 14 of 15
NXP Semiconductors 2N7002P
60 V, 360 mA N-channel Trench MOSFET
No offer to sell or license — Nothing in this document may b e interpreted or
construed as an of fer to se ll product s that is op en for accept ance or the grant ,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Export control — This document as well as the item(s) descri bed herein may
be subject to export control regulat i ons. Export might require a prior
authorization from national authorities.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
12.4 Trademarks
Notice: All refe renced brands, produc t names, service names and trademarks
are the property of their respective ow ners.
Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV,
FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE,
ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse,
QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET,
TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V.
HD Radio and HD Radio logo — are trademarks of iBiquity Digital
Corporation.
13. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
NXP Semiconductors 2N7002P
60 V, 360 mA N-channel Trench MOSFET
© NXP B.V. 2010. All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 29 July 2010
Document identi fier: 2N7002 P
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
14. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1
1.1 General description . . . . . . . . . . . . . . . . . . . . . .1
1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . .1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . .1
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . .2
3 Ordering information. . . . . . . . . . . . . . . . . . . . . .2
4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .2
6 Thermal characteristics . . . . . . . . . . . . . . . . . . .4
7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . .5
8 Test information. . . . . . . . . . . . . . . . . . . . . . . . . .9
9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . .10
10 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11
11 Revision history. . . . . . . . . . . . . . . . . . . . . . . . .12
12 Legal information. . . . . . . . . . . . . . . . . . . . . . . .13
12.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . .13
12.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
12.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . .13
12.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .14
13 Contact information. . . . . . . . . . . . . . . . . . . . . .14
