BD646, BD648, BD650, BD652 PNP SILICON POWER DARLINGTONS Designed for Complementary Use with BD645, BD647, BD649 and BD651 62.5 W at 25C Case Temperature 8 A Continuous Collector Current Minimum hFE of 750 at 3V, 3 A TO-220 PACKAGE (TOP VIEW) B 1 C 2 E 3 Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25C case temperature (unless otherwise noted) RATING Collector-base voltage (IE = 0) Collector-emitter voltage (IB = 0) SYMBOL BD646 -80 BD648 -100 BD650 V CBO -140 BD646 -60 BD648 BD650 VCEO Continuous collector current Peak collector current (see Note 1) Continuous base current Continuous device dissipation at (or below) 25C case temperature (see Note 2) Continuous device dissipation at (or below) 25C free air temperature (see Note 3) Unclamped inductive load energy (see Note 4) Operating junction temperature range Storage temperature range Lead temperature 3.2 mm from case for 10 seconds NOTES: 1. 2. 3. 4. UNIT V -120 BD652 -80 V -100 -120 BD652 Emitter-base voltage VALUE VEBO -5 IC -8 V A ICM -12 A IB -0.3 A Ptot 62.5 W Ptot 2 W 1/2LIC2 50 mJ C Tj -65 to +150 Tstg -65 to +150 C TL 260 C This value applies for tp 0.3 ms, duty cycle 10%. Derate linearly to 150C case temperature at the rate of 0.4 W/C. Derate linearly to 150C free air temperature at the rate of 16 mW/C. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = -5 mA, RBE = 100 , VBE(off) = 0, RS = 0.1 , VCC = -20 V. MAY 1993 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 1 BD646, BD648, BD650, BD652 PNP SILICON POWER DARLINGTONS electrical characteristics at 25C case temperature (unless otherwise noted) PARAMETER TEST CONDITIONS MIN BD646 V(BR)CEO ICEO ICBO IEBO hFE VCE(sat) VBE(sat) VBE(on) Collector-emitter MAX BD648 -80 BD650 -100 BD652 -120 IC = -30 mA IB = 0 VCE = -30 V IB = 0 BD646 -0.5 Collector-emitter VCE = -40 V IB = 0 BD648 -0.5 cut-off current VCE = -50 V IB = 0 BD650 -0.5 breakdown voltage (see Note 5) TYP V VCE = -60 V IB = 0 BD652 -0.5 VCB = -60 V IE = 0 BD646 -0.2 VCB = -80 V IE = 0 BD648 -0.2 VCB = -100 V IE = 0 BD650 -0.2 Collector cut-off VCB = -120 V IE = 0 BD652 -0.2 current VCB = -40 V IE = 0 TC = 150C BD646 -2.0 VCB = -50 V IE = 0 TC = 150C BD648 -2.0 VCB = -60 V IE = 0 TC = 150C BD650 -2.0 VCB = -70 V IE = 0 TC = 150C BD652 -2.0 VEB = -5 V IC = 0 (see Notes 5 and 6) VCE = -3 V IC = -3 A Emitter cut-off current Forward current transfer ratio (see Notes 5 and 6) UNIT -60 -5 mA mA mA 750 -2 Collector-emitter IB = -12 mA IC = -3 A saturation voltage IB = -50 mA IC = -5 A IB = -50 mA IC = -5 A (see Notes 5 and 6) -3 V IC = -3 A (see Notes 5 and 6) -2.5 V Base-emitter saturation voltage Base-emitter voltage VCE = -3 V (see Notes 5 and 6) -2.5 V NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 s, duty cycle 2%. 6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. thermal characteristics MAX UNIT RJC Junction to case thermal resistance PARAMETER MIN 2.0 C/W RJA Junction to free air thermal resistance 62.5 C/W 2 TYP MAY 1993 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. BD646, BD648, BD650, BD652 PNP SILICON POWER DARLINGTONS TYPICAL CHARACTERISTICS TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT VCE(sat) - Collector-Emitter Saturation Voltage - V TCS135AD 50000 hFE - Typical DC Current Gain COLLECTOR-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT TC = -40C TC = 25C TC = 100C 10000 1000 VCE = -3 V tp = 300 s, duty cycle < 2% 100 -0*5 -1*0 -10 TCS135AB -2*0 tp = 300 s, duty cycle < 2% IB = I C / 100 -1*5 -1*0 TC = -40C TC = 25C TC = 100C -0*5 -0*5 IC - Collector Current - A -1*0 -10 IC - Collector Current - A Figure 1. Figure 2. BASE-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT TCS135AC VBE(sat) - Base-Emitter Saturation Voltage - V -3*0 -2*5 TC = -40C TC = 25C TC = 100C -2*0 -1*5 -1*0 IB = IC / 100 tp = 300 s, duty cycle < 2% -0*5 -0*5 -1*0 -10 IC - Collector Current - A Figure 3. MAY 1993 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 3 BD646, BD648, BD650, BD652 PNP SILICON POWER DARLINGTONS MAXIMUM SAFE OPERATING REGIONS MAXIMUM FORWARD-BIAS SAFE OPERATING AREA IC - Collector Current - A -10 SAS135AC -1*0 -0*1 BD646 BD648 BD650 BD652 -0.01 -1*0 -10 -100 -1000 VCE - Collector-Emitter Voltage - V Figure 4. THERMAL INFORMATION MAXIMUM POWER DISSIPATION vs CASE TEMPERATURE TIS130AC Ptot - Maximum Power Dissipation - W 80 70 60 50 40 30 20 10 0 0 25 50 75 100 125 150 TC - Case Temperature - C Figure 5. 4 MAY 1993 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice.