Order this document by MBR3100/D SEMICONDUCTOR TECHNICAL DATA . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low-voltage, high-frequency inverters, free wheeling diodes, and polarity protection diodes. * * * * * * * * Motorola Preferred Device Low Reverse Current Low Stored Charge, Majority Carrier Conduction Low Power Loss/High Efficiency Highly Stable Oxide Passivated Junction Guard-Ring for Stress Protection Low Forward Voltage 150C Operating Junction Temperature High Surge Capacity SCHOTTKY BARRIER RECTIFIER 3.0 AMPERES 100 VOLTS Mechanical Characteristics: * Case: Epoxy, Molded * Weight: 1.1 gram (approximately) * Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable * Lead and Mounting Surface Temperature for Soldering Purposes: 220C Max. for 10 Seconds, 1/16 from case * Shipped in plastic bags, 5,000 per bag * Available Tape and Reeled, 1500 per reel, by adding a "RL'' suffix to the part number * Polarity: Cathode indicated by Polarity Band * Marking: B3100 CASE 267-03 PLASTIC MAXIMUM RATINGS Rating Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current, TA = 100C (RJA = 28C/W, P.C. Board Mounting, see Note 1) Non-Repetitive Peak Surge Current (Surge applied at rated load conditions, half wave, single phase, 60 Hz) Operating and Storage Junction Temperature Range (Reverse Voltage applied) Voltage Rate of Change (Rated VR) Symbol MBR3100 Unit VRRM VRWM VR 100 V IO 3.0 A IFSM 150 A TJ, Tstg *65 to +150 C dv/dt 10 V/ns Symbol Max Unit RJA 28 C/W Max Unit THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient (see Note 1, Mounting Method 3) ELECTRICAL CHARACTERISTICS (TL = 25C unless otherwise noted) Symbol Characteristic Maximum Instantaneous Forward Voltage* (iF = 3 Amps, TL = 25C) (iF = 3 Amps, TL = 100C) vF Maximum Instantaneous Reverse Current @ Rated dc Voltage* (TL = 25C) (TL = 100C) iR *Pulse Test: Pulse Width = 300 s, Duty Cycle V 0.79 0.69 v 2.0%. mA 0.6 20 Preferred devices are Motorola recommended choices for future use and best overall value. Rectifier Device Data Motorola, Inc. 1999 1 50 30 20 1 0.5 I , REVERSE CURRENT (mA) R i , INSTANTANEOUS FORWARD CURRENT (AMPS) F MBR3100 TJ = 150C 10 100C 5 3 2 25C 1 0.5 0.3 0.2 TJ = 150C 0.2 0.1 125C 0.05 0.02 0.01 100C 0.005 0.002 0.001 0.0005 0.1 25C 0.0002 0.05 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 vF, INSTANTANEOUS VOLTAGE (VOLTS) 0.0001 0 10 20 30 40 50 60 80 70 VR REVERSE VOLTAGE (VOLTS) 90 100 Figure 2. Typical Reverse Current* Figure 1. Typical Forward Voltage 8 P , AVERAGE POWER DISSIPATION (WATTS) F (AV) I F (AV) , AVERAGE FORWARD CURRENT (AMPS) *The curves shown are typical for the highest voltage device in the voltage grouping. Typical reverse current for lower voltage selections can be estimated from these curves if VR is sufficient below rated VR. 7 6 5 dc 4 SQUARE WAVE 3 2 1 0 20 40 60 80 100 120 140 160 TA, AMBIENT TEMPERATURE (C) 180 4 3.5 3 2.5 SQUARE WAVE 2 1.5 1 0.5 0 Figure 3. Current Derating (Mounting method #3 per note 1) dc 1.0 2.0 3.0 4.0 IF (AV), AVERAGE FORWARD CURRENT (AMPS) 5.0 Figure 4. Power Dissipation 400 C, CAPACITANCE (pF) 300 200 TJ = 25C f = 1 MHz 100 80 50 40 0 20 40 60 80 VR, REVERSE VOLTAGE (VOLTS) Figure 5. Typical Capacitance 2 Rectifier Device Data MBR3100 NOTE 1 -- MOUNTING DATA Data shown for thermal resistance junction-to-ambient (RJA) for the mountings shown is to be used as typical guideline values for preliminary engineering, or in case the tie point temperature cannot be measured. TYPICAL VALUES FOR RJA IN STILL AIR Mounting Method Lead Length, L (in) 1/8 1/4 1/2 3/4 RJA 1 50 51 53 55 C/W 2 58 59 61 63 C/W C/W 28 3 Mounting Method 1 P.C. Board where available copper surface is small. L L EEEEEEEEEEE EEEEEEEEEEE Mounting Method 2 Vector Push-In Terminals T-28 EEEEEEEEEEEEE EEEEEEEEEEEEE L L Mounting Method 3 EE EE EE EE EE EE EE EE Rectifier Device Data P.C. Board with 2-1/2" X 2-1/2" copper surface. L = 1/2" Board Ground Plane 3 MBR3100 PACKAGE DIMENSIONS B NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. D 1 K DIM A B D K A INCHES MIN MAX 0.370 0.380 0.190 0.210 0.048 0.052 1.000 --- MILLIMETERS MIN MAX 9.40 9.65 4.83 5.33 1.22 1.32 25.40 --- STYLE 1: PIN 1. CATHODE 2. ANODE K 2 CASE 267-03 ISSUE C Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. 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