1Rectifier Device Data
. . . employing the Schottky Barrier principle in a large area metal–to–silicon power
diode. State–of–the–art geometry features epitaxial construction with oxide passiva-
tion and metal overlap contact. Ideally suited for use as rectifiers in low–voltage,
high–frequency inverters, free wheeling diodes, and polarity protection diodes.
•Low Reverse Current
•Low Stored Charge, Majority Carrier Conduction
•Low Power Loss/High Efficiency
•Highly Stable Oxide Passivated Junction
•Guard–Ring for Stress Protection
•Low Forward Voltage
•150°C Operating Junction Temperature
•High Surge Capacity
Mechanical Characteristics:
•Case: Epoxy, Molded
•Weight: 1.1 gram (approximately)
•Finish: All External Surfaces Corrosion Resistant and Terminal Leads are
Readily Solderable
•Lead and Mounting Surface Temperature for Soldering Purposes: 220°C Max. for
10 Seconds, 1/16″ from case
•Shipped in plastic bags, 5,000 per bag
•Available Tape and Reeled, 1500 per reel, by adding a “RL’’ suffix to the part
number
•Polarity: Cathode indicated by Polarity Band
•Marking: B3100
MAXIMUM RATINGS
Rating Symbol MBR3100 Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
100 V
Average Rectified Forward Current, TA = 100°C
(RθJA = 28°C/W, P.C. Board Mounting, see Note 1) IO3.0 A
Non–Repetitive Peak Surge Current (Surge applied at rated load
conditions, half wave, single phase, 60 Hz) IFSM 150 A
Operating and Storage Junction Temperature Range
(Reverse Voltage applied) TJ, Tstg
*
65 to +150 °C
Voltage Rate of Change (Rated VR) dv/dt 10 V/ns
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Ambient
(see Note 1, Mounting Method 3) RθJA 28 °C/W
ELECTRICAL CHARACTERISTICS (TL = 25°C unless otherwise noted)
Characteristic Symbol Max Unit
Maximum Instantaneous Forward Voltage*
(iF = 3 Amps, TL = 25°C)
(iF = 3 Amps, TL = 100°C)
vF 0.79
0.69
V
Maximum Instantaneous Reverse Current @ Rated dc Voltage*
(TL = 25°C)
(TL = 100°C)
iR0.6
20
mA
*Pulse Test: Pulse Width = 300 µs, Duty Cycle
v
2.0%.
Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola, Inc. 1999
Order this document
by MBR3100/D
SEMICONDUCTOR TECHNICAL DATA
SCHOTTKY BARRIER
RECTIFIER
3.0 AMPERES
100 VOLTS
CASE 267–03
PLASTIC
Motorola Preferred Device
MBR3100
2Rectifier Device Data
VR, REVERSE VOLTAGE (VOL TS)
IF (AV), AVERAGE FORWARD CURRENT (AMPS)
0 2.01.0 3.0 4.0 5.0
0.5
1
1.5
2
2.5
P , AVERAGE POWER DISSIPATION (WATTS)
F (AV)
020 6040 80
300
400
C, CAPACITANCE (pF)
200
40
80
50
100
TA, AMBIENT TEMPERATURE (
°
C)
20 1006040 80
4
2
0
dc
120 140 160 180
I , AVERAGE FORWARD CURRENT (AMPS)
F (AV)
VR REVERSE VOLTAGE (VOL TS)
02010 30 40
0.001
0.002
0.005
0.01
0.05
0.02
0.1
0.5
0.2
1
Figure 1. Typical Forward Voltage
vF, INSTANTANEOUS VOLTAGE (VOLTS)
0.20.1 0.3 0.4 0.5
5
0.2
0.1
3
2
1
0.70.6 0.8 0.9
0.3
0.05
0.5
I , REVERSE CURRENT (mA)
R
i , INSTANTANEOUS FORWARD CURRENT (AMPS)
F
Figure 2. Typical Reverse Current*
Figure 3. Current Derating
(Mounting method #3 per note 1) Figure 4. Power Dissipation
Figure 5. Typical Capacitance
25
°
C
100
°
C
TJ = 150
°
C
50
30
20
10
1 1.2 1.31.1 50 60 80 90 100
0.0001
0.0002
0.0005 25
°
C
70
100
°
C
TJ = 150
°
C
125
°
C
1
3
5
6
7
8
3
3.5
4
dc
TJ = 25
°
C
f = 1 MHz
*The curves shown are typical for the highest voltage device in the
voltage grouping. T ypical reverse current for lower voltage selections
can be estimated from these curves if VR is sufficient below rated VR.
SQUARE
WAVE
SQUARE
WAVE
MBR3100
3Rectifier Device Data
TYPICAL VALUES FOR RθJA IN STILL AIR
Data shown for thermal resistance junction–to–ambient (RθJA)
for the mountings shown is to be used as typical guideline values
for preliminary engineering, or in case the tie point temperature
cannot be measured.
1
2
3
Mounting
Method
Lead Length, L (in)
1/8 1/4 1/2 3/4 RθJA
50 51 53 55 °C/W
°C/W
°C/W
58 59 61 63
28
NOTE 1 — MOUNTING DATA
ÉÉÉÉÉÉÉÉÉÉÉ
ÉÉÉÉÉÉÉÉÉÉÉ
ÉÉÉÉÉÉÉÉÉÉÉÉÉ
ÉÉÉÉÉÉÉÉÉÉÉÉÉ
ÉÉ
ÉÉ
ÉÉ
ÉÉ
ÉÉ
ÉÉ
ÉÉ
ÉÉ
Mounting Method 1
P.C. Board where available
copper surface is small.
L L
L
Mounting Method 2
Vector Push–In
Terminals T–28
L
Mounting Method 3
P.C. Board with
2–1/2” X 2–1/2”
copper surface.
L = 1/2”
Board Ground Plane
MBR3100
4Rectifier Device Data
PACKAGE DIMENSIONS
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
STYLE 1:
PIN 1. CATHODE
2. ANODE
1
2
K
A
K
D
B
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.370 0.380 9.40 9.65
B0.190 0.210 4.83 5.33
D0.048 0.052 1.22 1.32
K1.000 ––– 25.40 –––
CASE 267–03
ISSUE C
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MBR3100/D
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