1Rectifier Device Data
. . . employing the Schottky Barrier principle in a large area metal–to–silicon power
diode. State–of–the–art geometry features epitaxial construction with oxide passiva-
tion and metal overlap contact. Ideally suited for use as rectifiers in low–voltage,
high–frequency inverters, free wheeling diodes, and polarity protection diodes.
•Low Reverse Current
•Low Stored Charge, Majority Carrier Conduction
•Low Power Loss/High Efficiency
•Highly Stable Oxide Passivated Junction
•Guard–Ring for Stress Protection
•Low Forward Voltage
•150°C Operating Junction Temperature
•High Surge Capacity
Mechanical Characteristics:
•Case: Epoxy, Molded
•Weight: 1.1 gram (approximately)
•Finish: All External Surfaces Corrosion Resistant and Terminal Leads are
Readily Solderable
•Lead and Mounting Surface Temperature for Soldering Purposes: 220°C Max. for
10 Seconds, 1/16″ from case
•Shipped in plastic bags, 5,000 per bag
•Available Tape and Reeled, 1500 per reel, by adding a “RL’’ suffix to the part
number
•Polarity: Cathode indicated by Polarity Band
•Marking: B3100
MAXIMUM RATINGS
Rating Symbol MBR3100 Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
100 V
Average Rectified Forward Current, TA = 100°C
(RθJA = 28°C/W, P.C. Board Mounting, see Note 1) IO3.0 A
Non–Repetitive Peak Surge Current (Surge applied at rated load
conditions, half wave, single phase, 60 Hz) IFSM 150 A
Operating and Storage Junction Temperature Range
(Reverse Voltage applied) TJ, Tstg
*
65 to +150 °C
Voltage Rate of Change (Rated VR) dv/dt 10 V/ns
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Ambient
(see Note 1, Mounting Method 3) RθJA 28 °C/W
ELECTRICAL CHARACTERISTICS (TL = 25°C unless otherwise noted)
Characteristic Symbol Max Unit
Maximum Instantaneous Forward Voltage*
(iF = 3 Amps, TL = 25°C)
(iF = 3 Amps, TL = 100°C)
vF 0.79
0.69
V
Maximum Instantaneous Reverse Current @ Rated dc Voltage*
(TL = 25°C)
(TL = 100°C)
iR0.6
20
mA
*Pulse Test: Pulse Width = 300 µs, Duty Cycle
v
2.0%.
Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola, Inc. 1999
Order this document
by MBR3100/D
SEMICONDUCTOR TECHNICAL DATA
SCHOTTKY BARRIER
RECTIFIER
3.0 AMPERES
100 VOLTS
CASE 267–03
PLASTIC
Motorola Preferred Device