© 2008 IXYS CORPORATION All rights reserved
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified) Min. Typ. Max.
BVCES IC= 250μA , VGE = 0V 330 V
VGE(th) IC= 250μA , VCE = VGE 3.0 5.0 V
ICES VCE = 330V 1 μA
VGE= 0V TJ = 125°C 200 μA
IGES VCE= 0V, VGE = ±20V ±200 nA
VCE(sat) VGE = 15V, IC = 45A 1.33 1.60 V
TJ = 125°C 1.31 V
IC = 90A 1.61 V
TJ = 125°C 1.71 V
Trench Gate High
Speed IGBT
For PDP Applications
Symbol Test Conditions Maximum Ratings
VCES TJ= 25°C to 150°C 330 V
VGEM ±30 V
IC25 TC= 25°C, IGBT chip capability 90 A
ICP TJ≤ 150°C, tp ≤ 1μs 360 A
IDP TJ≤ 150°C, tp ≤ 1μs60A
IC(RMS) Lead current limit 75 A
PCTC= 25°C 200 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
TL1.6mm (0.062 in.) from case for 10s 300 °C
TSOLD Plastic body for 10 seconds 260 °C
MdMounting torque 1.13/10 Nm/lb.in.
Weight TO-3P 5.5 g
DS99844A(05/08)
Features
•International standard package
•Low VCE(sat)
- for minimum on-state conduction
losses
•Fast switching
Applications
•PDP Screen Drivers
IXGQ90N33TB VCES = 330V
ICP = 360A
VCE(sat) ≤≤
≤≤
≤ 1.6V
TO-3P
(TAB)
GCE
G = Gate C = Collector
E = Emitter TAB = Collector
IXYS reserves the right to change limits, test conditions, and dimensions.
IXGQ90N33TB
TO-3P Outline
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Notes: 1. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
Symbol Test Conditions Characteristic Values
(TJ = 25°C unless otherwise specified) Min. Typ. Max.
gfs IC= 45A VCE = 10V, Note 1 45 76 S
Cies 2490 pF
Coes VCE = 25V, VGE = 0V, f = 1MHz 234 pF
Cres 19 pF
Qg69 nC
Qge IC= 0.5 • IC25, VGE = 15V, VCE = 0.5 • VCES 18 nC
Qgc 13 nC
td(on) 15 ns
tri 29 ns
td(off) 46 ns
tfi 166 ns
td(on) 13 ns
tri 26 ns
td(off) 52 ns
tfi 330 ns
RthJC 0.62 °C/W
RthCS 0.25 °C/W
Resistive load, TJ = 25°°
°°
°C
IC= 0.5 • IC25, VGE = 15V
VCE = 240V, RG = 5Ω
Resistive load, TJ = 125°°
°°
°C
IC= 0.5 • IC25, VGE = 15V
VCE = 240V, RG = 5Ω
© 2008 IXYS CORPORATION All rights reserved
IXGQ90N33TB
Fi g . 1. Outp u t C h ar acter i sti cs
@ 25ºC
0
10
20
30
40
50
60
70
80
90
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
V
CE
- Volts
I
C
- A mpere s
V
GE
= 15V
13V
11V 9V
7V
Fi g . 2. Exten d ed Outp u t C h aracter i sti cs
@ 25ºC
0
50
100
150
200
250
300
350
012345678910
V
CE
- Vo lts
I
C
- Amperes
V
GE
= 15V
13V
11V
7V
9V
Fig. 3. Output Characteristics
@ 125ºC
0
10
20
30
40
50
60
70
80
90
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
V
CE
- Vo lts
I
C
- A mpe res
V
GE
= 15V
13V
11V
5V
7V
9V
Fig. 4. Dependence of V
CE(sat)
on
Jun ctio n Temper atu re
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
V
CE(sat)
- Normalized
V
GE
= 15V
I
C
= 23A
I
C
= 90A
I
C
= 45A
Fig. 5. Collector-to-Emitter Voltage
vs. Gate-to -Emitter Vo l tag e
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5 6 7 8 9 101112131415
V
GE
- Vo lts
V
CE
- V o lts
I
C
= 180A
T
J
= 25ºC
90A
45A
Fig. 6. Input Admittance
0
10
20
30
40
50
60
70
80
90
100
110
120
4.2 4.6 5.0 5.4 5.8 6.2 6.6 7.0
V
GE
- Vo lts
I
C
- Amperes
T
J
= 125ºC
25ºC
- 40ºC
IXYS reserves the right to change limits, test conditions, and dimensions.
IXGQ90N33TB
Fig. 7. Transconductance
0
10
20
30
40
50
60
70
80
90
100
110
0 102030405060708090100110120
I
C
- Amperes
g
f s
-
Siemens
TJ
= - 40ºC
125ºC
25ºC
Fig. 8. Gate Charge
0
2
4
6
8
10
12
14
16
0 10203040506070
Q
G
- NanoCoulombs
V
GE
- V o lt s
VCE
= 165V
I C = 45A
I G = 10mA
Fig. 9. Reverse-Bias Safe Op erati ng Area
0
10
20
30
40
50
60
70
80
90
100
50 100 150 200 250 300 350
V
CE
- Vo lts
I
C
- A m p ere s
TJ
= 150ºC
RG = 5Ω
dV / dt < 10V / ns
Fig. 10. Capacitance
10
100
1,000
10,000
0 5 10 15 20 25 30 35 40
V
CE
- Volts
Capacitance - PicoFarads
f
= 1 MHz Cies
Coes
Cres
Fi g . 12. Maximum Transi en t Th er mal
Impedance
0.01
0.10
1.00
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- ºC / W
Fig. 11. Forward-Bias Safe Operating Area
1
10
100
1000
1 10 100 1000
V
CE
- Volts
I
C
- A mpe res
TJ
= 150ºC
TC = 25ºC
Single Pulse
VCE
(sat)
Limit
1µs
10µs
100µs
1ms
© 2008 IXYS CORPORATION All rights reserved IXYS REF: G_90N33TB(4G)5-27-08-B
IXGQ90N33TB
Fi g. 14. Resi stive Tur n -on R ise Time
vs. Coll ector Current
23
24
25
26
27
28
29
30
31
20 30 40 50 60 70 80 90
I
C
- Amperes
t
r
- Nanoseconds
R
G
= 5Ω
V
GE
= 15V
V
CE
= 24 0V
T
J
= 125ºC
T
J
= 25ºC
Fi g . 15. R esi sti ve Tur n -o n Swi tch i n g Times
vs. Gate R esi stance
10
20
30
40
50
60
70
4 6 8 101214161820
R
G
- Ohms
t
r
- Nanoseconds
11
13
15
17
19
21
23
t
d(on)
- Nanoseconds
t
r
t
d(on)
- - - -
T
J
= 125ºC, V
GE
= 15V
V
CE
= 240V
I
C
= 90A, 45A
Fi g . 16. R esi sti ve Tur n -o ff Swi tch in g Times
vs. Ju n cti o n Temper atu r e
60
100
140
180
220
260
300
340
380
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
f
- Nanoseconds
37
39
41
43
45
47
49
51
53
t
d(off)
- Nanoseconds
t
f
t
d(off)
- - - -
R
G
= 5Ω, V
GE
= 15V
V
CE
= 240V
I
C
= 45A
I
C
= 90A
Fi g . 17. R esi sti ve Tur n -o ff Swi tch in g Times
vs. Collector Cur rent
50
100
150
200
250
300
350
400
450
20 30 40 50 60 70 80 90
I
C
- Amperes
t
f
- Nanoseconds
34
38
42
46
50
54
58
62
66
t
d(off)
- Nanoseconds
T
J
= 125ºC
T
J
= 25ºC
t
f
t
d(off)
- - - -
R
G
= 5Ω, V
GE
= 15V
V
CE
= 240V
Fig . 13. R esistive Tu rn -on Ri se Time
vs. Ju n cti o n Temper atu r e
25
26
27
28
29
30
31
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Cen tig rade
t
r
- Nanoseconds
I
C
= 90A
R
G
= 5Ω
V
GE
= 15V
V
CE
= 240V
I
C
= 45A
Fig. 18. Resistive T urn-off Switching Ti mes
vs. Gate R esistan ce
240
260
280
300
320
340
360
380
400
4 6 8 101214161820
R
G
- Ohms
t
f
- Nanoseconds
40
50
60
70
80
90
100
110
120
t
d(off)
- Nanoseconds
I
C
= 45A
I
C
= 90A
t
r
t
d(on)
- - - -
T
J
= 125ºC, V
GE
= 15V
V
CE
= 240V
