SIEMENS BAR 65-02W Silicon RF Switching Diode Preliminary data Low loss, low capacitance PIN-diode * Band switch for TV-tuners ; 2 * Series diode for mobile communications transmit-receive switch YPSOS1 7S. Type Marking | Ordering Code Pin Configuration Package BAR 65-03WM/blue |Q62702-A1047 t=c [2=A | SOD-323 Maximum Ratings Parameter Symbol Values Unit Diode reverse voltage Ve 30 Vv Forward current Ig 100 mA Operating temperature range Top -55...4+125 C Storage temperature Tstg - 55 ... + 150 Semiconductor Group 174 03.96SIEMENS BAR 65-03W Electrical Characteristics at T,=25C, unless otherwise specified Parameter Symbol Values Unit min. |typ. |max. DC characteristics Reverse current Ir nA Vea = 20V, Ta = 25C - - 20 Forward voltage Ve Vv fp = 100 mA - 0.93 1 AC characteristics Diode capacitance CT pF Va =1V, f=1MHz - 0.6 0.9 Vea =3V, f= 1 MHz - 0.57 0.8 Forward resistance i Q lp =5 mA, f= 100 MHz - 0.65 0.95 Ie = 10 mA, f= 100 MHz - 0.56 0.9 Series inductance Ly - 1.8 - nH Semiconductor Group 175 03.96SIEMENS BAR 65-03W Forward current / = f (VF) Forward resistance 4 = f/f) f= 100MHz 104 101 10 104 400 500 600 700 800 mV 1000 10 10 mA e | Diode capacitance Cy = f (Vp) Diode capacitance Cy = f (Vp) f= MHz f= 100MHz 1.0, ; 1.0 pF {_ 4 pF G, c, | 0.8 08 0.6 a ; 0.6 0.5 ~ a 05 pp + I | 04-4 ' 0.4 - | 03 a 0.3 ! | 02 i 0.2 L J 0 12 39 4 5 6 7 8 V 10 042 3 4 6 6 7 8 Vv 10 w Vp Ma Semiconductor Group 176 03.96