CORE DRIVERS TABLE9 NPN SILICON PLANAR HIGH SPEED CORE DRIVER TRANSISTORS The devices shown in this table are designed for use in fast, medium and high voltage, high current core driving applications where the high speed at high current capability is of prime importance. Max VCE(sat) hre Switching Times Max at at (Max) at_ Prot Type |/VcB|Vceo} Ic at Tamb| Package Ic Ip |Min} Max] Ic | ton | togf Io | =25C Vv Vio] mA v mA | mA mA | ns ns mA mw BSX59 70 45 |}1000} 0:3 | 150 | 15 | 25 | | 500 | 35 60 | 500 800 TO-39 BSX60 70 30 | 1000! 0-3 | 150 | 15 | 30 90 | 500 | 40 70 | 500 800 TO-39 BSX61 70 45 }1000| 0-5 | 150 | 15 | 25 | | 500 | 50 | 100 ; 500 800 TO-39 2N3261 40 15 | 500/ 0-35) 100 | 10 | 40 | 150 10 | 13 16 | 100 300 TO-18 2N3512 | 60 35] | 0-4/150]7-5}10| | 500 {| 30 45 | 150 800 TO-39 2N3724 | 50 30 } 500 | 0-2 | 100 | 10 | 60 | 150 | 100 | 35 60 | 500 800 TO-39 2N3725 | 80 40 | 500 | 0-26] 100 | 10 | 60 | 150 | 100 | 35 60 | 500 800 TO-39 DARLINGTONS TABLE10 NPN SILICON HIGH CURRENT DARLINGTON TRANSISTORS The devices shown in this table are designed for applications requiring very high current gain. The monolithic construction has the inherent advantages of fast switching times, low saturation voltages and low leakage currents. This table should be referred to in conjunction with the LF Power Transistor Product Guide which contains full details of the available range of Darlington Transistors. Max VcE(sat) hre Max Cobo |Max IcBpo Max at at at 1 MHz at Prot Type |Vcsp|/VcEo! Ic at Tamb | Package lc | Ig | Min }Max] Ic VcoB Ves} =256C v VIA Vv A | mA A pF | V [pA] V Ww BD320A | 80 60 1) 16 1 1) 1K | | 0-5 6 10 | 1 60 5 TO-39 BD320B | 80 60 1) 16 1) 5K | | 0-5 6 10 |1 60 5 TO-39 BD320C | 80 60 1|16 1 1! 10K; | 0-5 6 10 | 1 60 5 TO-39 BD321A | 80 60 2)/17 2 2) 1K | 1 8:5 | 10/1 60 5 TO-39 BD321B | 80 60 2/|17 2 2] SK | 1 85} 10/1 60 5 TO--39 BD321C | 80 60 2/17 2 2| 10K | 1 85 | 10] 1 60 5 TO-39 BD322A | 80 60 1) 16 1 1) 1K | ] 0-5 6 10 | 1 60 75 TO-39 BD322B | 80 60 1/16 1 1) 5K |} /] 0-5 6 10 | 1 60 75 TO-39 BD322C | 80 60 1116 1 1] 10K | /] 0-5 6 10/1 60 75 TO-39 BD323A | 80 60 2|17 2 2) 1K | 1 85 | 10 / 1 60 10 TO-39 BD323B | 80 60 2)17 2 2| 5K | 1 85 | 10) 1 60 10 TO-39 BD323C ; 80 60 2,17 2 2] 10K | 1 85 | 10/1 60 10 TO-39 2N6383 | 40 40 | 10 3 10 |100) 1K |;20K) 5 200 ; 10 | 1* | 40 100 TO-3 2N6384 | 60 60 | 10 3 10 |100| 1K |20K|) 5 200 | 10 | 1* | 60 100 TO-3 2N6385 | 80 80 | 10 3 10 }100} 1K |20K} 5 200 | 10 | 1* | 80 100 TO-3 * Refers to lcEo (in mA) 17CORE DRIVERS TABLE 9 NPN SILICON PLANAR HIGH SPEED CORE DRIVER TRANSISTORS The devices shown in this table are designed for use in fast, medium and high voltage, high current core driving applications where the high speed at high current capability is of prime importance. Max VCE(sat) nrE Switching Times Max at at (Max) at Prot Type VesIVcEO! Ic at Tamb| Package le Ip |Min}] Max] ic | ton | tof le | =25C Vv Vi} mA Vv mA | mA mA | ns ns mA mW BSX59 70 45 |1000/ 0-3 | 150 | 15 | 25 | | 500 | 35 60 | 500 800 TO39 BSX60 70 30 | 1000] 0-3 | 150 | 15 | 30 90 | 500 | 40 70 | 500 800 TO39 BSX61 70 45 11000] 0-5 | 150 | 15 | 25 | | 500 | 50 | 100 | 500 800 TO39 2N3261 40 15 | 500; 0-35) 100 | 10 | 40 | 150 10 | 13 16 | 100 300 TO18 2N3512 | 60 35 | | 0-4] 150| 7-5] 10] | 500; 30 45 | 150 800 TO39 2N3724 | 50 30 | 500 | 0-2 | 100 | 10 | 60 } 150 | 100 | 35 60 | 500 800 TO39 2N3725 | 80 50 | 500 | 0-26] 100 | 10 | 60] 150} 100 | 35 60 | 500 800 TO39 DARLINGTONS TABLE10 NPN SILICON HIGH CURRENT DARLINGTON TRANSISTORS The devices shown in this table are designed for applications requiring very high current gain. The monolithic construction has the inherent advantages of fast switching times, low saturation voltages and low leakage currents. This table should be referred to in conjunction with the LF Power Transistor Product Guide which contains full details of the available range of Darlington Transistors. Max VcE(sat) FE Max Cobo (Max IcBo Max at at at 1 MHz at Prot Type |VcB}]VcEo} Ic at Tamb | Package Ic | Ip | Min |Max] Ic Ves Ves] =25C Vv Vv A Vv A | mA A pF V [pA] V WwW BD320A | 80 60 1)16 1 1} 1K | | 0-5 6 10} 1 60 5 TO39 BD320B | 80 60 1/|16 1 1) 5K | 10-5 6 10 | 1 60 5 TO39 BD320C } 80 60 1|16 1 1} 10K |} |] 0-5 6 10) 1 60 5 TO39 BD321A | 80 60 2; 17 2 2) 1K | 1 85 | 10) 1 60 5 TO39 BD321B | 80 60 2/17 2 2| 5K | 1 865 | 10 | 1 60 5 TO39 BD321C} 80 60 2/17 2 2, 10K | 1 85 | 10] 1 60 5 TO39 BD322A { 80 60 1|16 1 1) 1K | | 0-5 6 10 | 1 60 756 TO39 BD322B} 80} 60 1/16 1 1) 5K |}1]0-5] 6 10/1 60 | 75 TO39 BD322C| 80} 60 1/16] 1 1] 10K} ] 0-5 6 10} 1 60} 75 TO39 BD323A | 80 60 2/17 2 2, 1K | 1 8:5 | 10 | 1 60 10 TO39 BD323B | 80 60 2/17 2 2} 5K | 1 8:5 | 10 | 1 60 10 TO39 BD323C | 80 60 2)17 2 2] 10K | 1 865 | 10] 1 60 10 TO039 2N6383 | 40 40 | 10 3 10 |100] 1K |20K; 5 200 | 10 | 1* | 40 100 TO3 2N6384 | 60 60 | 10 3 10 |100)] 1K |20K; 5 200 | 10 | 1* | 60 100 TO3 2N6385 | 80 80 | 10 3 10 |100] 1K |20K] 5 200 | 10 | 1* | 80 100 TO3 * Refersto ICE (in MA) V7