InGaAs-Infrarot-Lumineszenzdiode (950 nm, High Power) InGaAs Infrared Emitting Diode (950 nm, High Power) F 0950A Vorlaufige Daten / Preliminary Data Wesentliche Merkmale Features * Typ. Gesamtleistung: 28 mW @ 100 mA im TOPLED(R) Gehause * Chipgroe 300 x 300 m2 * Wellenlange der Strahlung 950 nm * InGaAs-LED mit sehr hohem Wirkungsgrad * Gleichstrom- oder Impulsbetrieb moglich * Hohe Zuverlassigkeit * Hohe Impulsbelastbarkeit * Sehr kurze Schaltzeiten * Typ. total radiant power: 28 mW @ 100 mA in TOPLED(R) package * Chip size 300 x 300 m2 * Peak wavelength of 950 nm * Very highly efficient InGaAs LED * DC or pulsed operations are possible * High reliability * High pulse handling capability * Very short switching times Anwendungen) Applications * Schnelle Datenubertragung mit Ubertragungsraten bis 100 Mbaud (IR Tastatur, Joystick, Multimedia) * Analoge und digitale Hi-Fi Audio- und Videosignalubertragung * Batteriebetriebene Gerate (geringe Stromaufnahme) * Anwendungen mit hohen Zrverlassigkeitsanspruchen bzw. erhohten Anforderungen * Alarm- und Sicherungssysteme * IR-Freiraumubertragung * High data transmission rate up to 100 Mbaud (IR keyboard, Hoystick, Multimedia) * Analog and digital Hi-Fi audio and video signal transmission * Low power consumption (battery) equipment * Suitable for professional and high-reliability applications * Alarm and safety equipment * IR free air transmission Typ Type Bestellnummer Ordering Code Gehause Package F 0950A Q67220-C1262 Infrarot emittierender Hochleistungschip, Oberseite Kathodenanschlu Infrared emitting high power die, top side cathode connection 2002-02-21 1 F 0950A Elektrische Werte (gemessen auf TO18-Bodenplatte ohne Verguss, TA = 25 C) Electrical values (measured on TO18 header without resin, TA = 25 C) Bezeichnung Parameter Wert1) Value1) Symbol Symbol min. typ. Einheit Unit max. Wellenlange der Strahlung Wavelength at peak emission IF = 10 mA peak 950 nm Spektrale Bandbreite bei 50% von Imax, IF = 10 mA Spectral bandwidth at 50% of Imax 55 nm Sperrspannung reverse voltage IR = 10 A VR 5 20 V 16 18 ns Schaltzeiten, Ie von 10% auf 90% und von 90% auf tr, tf 10%, bei IF = 100 mA, RL = 50 Switching times, Ie from 10% to 90% and from 90% to 10%, IF = 100 mA, RL = 50 Durchlaspannung Forward voltage IF = 100 mA, tp = 20 ms VF TC 0.2 nm/K TCV -1.5 mV/K Temperaturkoeffizient2)von Temperature coefficient2)of IF = 100 mA; Temperaturkoeffizient2) von VF Temperature coefficient2) of VF IF = 100 mA; 2 V mW e 11 1.8 14 Gesamtstrahlflu4) radiant power4) IF = 100mA, t = 20 ms 2002-02-21 1.5 F 0950A Mechanische Werte Mechanical values Bezeichnung Parameter Wert1) Value1) Symbol Symbol Einheit Unit min. typ. max. Chipkantenlange (x-Richtung) Length of chip edge (x-direction) Lx 0.28 0.3 0.32 mm Chipkantenlange (y-Richtung) Length of chip edge (y-direction) Ly 0.28 0.3 0.32 mm Durchmesser des Wafers Diameter of the wafer D 50.8 mm Chiphohe Die height H 185 m Bondpaddurchmesser Diameter of bondpad d 115 m Bezeichnung Parameter Wert Value Vorderseitenmetallisierung Metallization frontside Aluminium Aluminum Ruckseitenmetallisierung Metallization backside Goldlegierung Gold alloy Trennverfahren Dicing Sagen Sawing Verbindung Chip - Trager Die bonding Kleben Epoxy Bonding 2002-02-21 3 F 0950A Grenzwerte3) (TA 0= 25 C) Maximum Ratings3) Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit Maximaler Betriebstemperaturbereich Maximum operating temperature range Top - 40...+100 C Maximaler Lagertemperaturbereich Maximum storage temperatur range Tstg - 40...+100 C Maximaler Durchlastrom Maximum forward current IF 100 mA Maximaler Stostrom maximum surge current tp = 10 s, D = 0.005 IS 2 A Maximale Sperrschichttemperatur Maximum junction temperature Tj 125 C 2002-02-21 4 F 0950A Relative Spectral Emission2) Irel = f () Radiant Intensity2) TA = 25 C TA = 25 C e = f (IF ) e 100 mA Single pulse, tP = 20 s OHF00777 100 erel e e (100 mA) 80 60 10 0 40 10 -1 20 10 -2 0 OHF00809 10 2 800 850 900 950 1000 10 -3 10 0 nm 1100 10 1 10 2 10 3 mA 10 4 F Forward Current2) , IF= f (VF), Single pulse, tp = 20 s, TA = 25 C F OHF00784 10 4 mA 10 Permissible Pulse Handling Capability2) IF = f (tP) duty cycle D = parameter, TA = 25 C IF 101 A 5 3 10 2 tP D= T tP IF T D= 10 1 100 10 0 5 10 OHF00040 -1 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1 10 -2 10 -3 0 0.5 1 1.5 2 2.5 3 3.5 10-1 -5 10 10-4 10-3 10-2 10-1 100 101 s 10 2 V 4.5 VF 2002-02-21 tp 5 F 0950A n-contact 0.185 (0.0073) 0.3 (0.0118) 0.115 (0.0045) Mazeichnung Chip Outlines p-contact GMOY6046 Mae werden als typische1) Werte wie folgt angegeben: mm (inch) / Dimensions are specified as typical1) values as follows: mm (inch). 2002-02-21 6 F 0950A Published by OSRAM Opto Semiconductors GmbH Wernerwerkstrasse 2, D-93049 Regensburg (c) All Rights Reserved. Attention please! The information generally describes the type of component and shall not be considered as assured characteristics or detailed specification. Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our sales organization. Packing Please use the recycling operators known to you. We can also help you - get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You will have to bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorized by us for such purpose! Critical components5), may only be used in life-support devices or systems6) with the express written approval of OSRAM OS. 1) Typical (refered to as typ.) data are defined as long-term production mean values and are only given for information. This is not a specified value. For final electrical testing a spot check with sufficient statistical accuracy is carried out. Minimum and maximum values( refered to as min. and max.) refer to the limits of the sample measurement. 2) Based on data measured in OSRAM Opto Semiconductor's TOPLED(R) package. They represent typical1) data. 3) Maximum ratings are strongly package dependent and may differ between different packages. The values given represent the chip in an OSRAM OS TOPLED(R) package and are only valid for this package. 4) Value is referenced to the vendor's measurement system (correlation to customer product(s) is required). 5) A critical component is a component used in a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 6) Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered. 2002-02-21 7