F 0950A
InGaAs-Infrarot-Lumineszenzdiode (950 nm, High Power)
InGaAs Infrared Emitting Diode (950 nm, High Power)
Vorläufige Daten / Preliminary Data
2002-02-21 1
Wesentliche Merkmale
• Typ. Gesamtleistung: 28 mW @ 100 mA im
TOPLED® Gehäuse
•Chipgröße 300 x 300 µm2
•Wellenlänge der Strahlung 950 nm
•InGaAs-LED mit sehr hohem Wirkungsgrad
•Gleichstrom- oder Impulsbetrieb möglich
•Hohe Zuverlässigkeit
•Hohe Impulsbelastbarkeit
•Sehr kurze Schaltzeiten
Anwendungen)
•Schnelle Datenübertragung mit
Übertragungsraten bis 100 Mbaud (IR Tastatur,
Joystick, Multimedia)
•Analoge und digitale Hi-Fi Audio- und
Videosignalübertragung
•Batteriebetriebene Geräte (g eringe
Stromaufnahme)
•Anwendungen mit hohen Zrverlässigkeits-
ansprüchen bzw. erhöhten Anforderungen
•Alarm- und Sicherungssysteme
•IR-Freiraumübertragung
Typ
Type Bestellnummer
Ordering Code Gehäuse
Package
F 0950A Q67220-C1262 Infrarot emittierender Hochleistungschip, Oberseite
Kathodenanschluß
Infrared emitting high power die, top side cathode
connection
Features
•Typ. total radiant power: 28 mW @ 100 mA in
TOPLED® package
•Chip size 300 x 300 µm2
•Peak wavelength of 950 nm
•Very highly efficient InGaAs LED
•DC or pulsed operations are possible
•High reliability
•High pulse handling capability
•Very short switching times
Applications
•High data transmission rate up to 100 Mbaud
(IR keyboard, Hoystick, Multimedia)
•Analog and digi tal Hi-Fi audio an d vi deo s ignal
transmission
•Low power consumption (battery)
equipment
•Suitable for professional and high-reliability
applications
•Alarm and safety equipment
•IR free air transmission
2002-02-21 2
F 0950A
Elektrische Werte (gemessen auf TO18-Bodenplatte ohne Verguss, TA = 25 °C)
Electrical values (measured on TO18 header without resin, TA = 25 °C)
Bezeichnung
Parameter Symbol
Symbol Wert1)
Value1) Einheit
Unit
min. typ. max.
Wellenlänge der Strahlung
Wavelength at peak emission
IF = 10 mA
λpeak 950 nm
Spektrale Bandbreite bei 50% von Imax,
IF = 10 mA
Spectral bandwidth at 50% of Imax
∆λ 55 nm
Sperrspannung
reverse voltage
IR = 10 µA
VR520 V
Schaltzeiten, Ie von 10% a uf 90% und von 90% auf
10%, bei IF = 100 mA, RL = 50 Ω
Switching time s, Ie from 10% to 90% and from
90% to 10%, IF = 100 mA, RL = 50 Ω
tr, tf16 18 ns
Durchlaβspannung
Forward voltage
IF = 100 mA, tp = 20 ms VF1.5 1.8 V
Gesamtstrahlfluß4)
radiant power4)
IF = 100mA, t = 20 ms
Φe11 14 mW
Temperaturkoeffizient2)von λ
Temperature coefficient2)of λ
IF = 100 mA;
TCλ0.2 nm/K
Temperaturkoeffizient2) von VF
Temperature coefficient2) of VF
IF = 100 mA;
TCV-1.5 mV/K
F 0950A
2002-02-21 3
Mechanische Werte
Mechanical values
Bezeichnung
Parameter Symbol
Symbol Wert1)
Value1) Einheit
Unit
min. typ. max.
Chipkantenlänge (x-Richtun g)
Length of chip edge (x-direction) Lx0.28 0.3 0.32 mm
Chipkantenlänge (y-Richtun g)
Length of chip edge (y-direction) Ly0.28 0.3 0.32 mm
Durchmesser des Wafers
Diameter of the wafer D50.8 mm
Chiphöhe
Die height H185 µm
Bondpaddurchmesser
Diameter of bondpad d115 µm
Bezeichnung
Parameter Wert
Value
Vorderseitenmetallisierung
Metallization frontside Aluminium
Aluminum
Rückseitenmetallisierung
Metallization backside Goldlegierung
Gold alloy
Trennverfahren
Dicing Sägen
Sawing
Verbindung Chip - Träger
Die bonding Kleben
Epoxy Bonding
2002-02-21 4
F 0950A
Grenzwerte3) (TA 0= 25 °C)
Maximum Ratings3)
Bezeichnung
Parameter Symbol
Symbol Wert
Value Einheit
Unit
Maximaler Betriebstemperaturbereich
Maximum operating temperature range Top - 40...+100 °C
Maximaler Lagertemperaturbereich
Maximum storage temperatur range Tstg - 40...+100 °C
Maximaler Durchlaßstrom
Maximum forward current IF100 mA
Maximaler Stoßstrom
maximum surge current
tp = 10 µs, D = 0.005
IS2A
Maximale Sperrschichttemperatur
Maximum junction temperature Tj125 °C
F 0950A
2002-02-21 5
Relative Spectral Emission2) Irel = f (λ)
TA = 25 °C
Forward Current2) , IF= f (VF),
Single pulse, tp = 20 µs, TA = 25 °C
Radiant Intensity2)
TA = 25 °C
Single pulse, tP = 20 µs
Permissible Pulse Handling Capability2) IF = f (tP)
duty cycle D = parame t er, TA = 25 °C
OHF00777
nm800
Ιerel
λ
0
850 900 950 1000 1100
20
40
60
80
100
OHF00784
10
-3
V
mA
0
Ι
F
V
F
0.5 1 1.5 2 2.5 3 3.5 4.5
10
-2
10
-1
10
0
10
1
10
2
10
3
10
4
Ιe
Ιe 100 mA = f (IF)
e
e (100 mA)
mA
OHF00809
F
Ι
ΙΙ
10 40
10 10 110 23
10
10
-3
10
-2
10
10
-1
0
10
2
OHF00040
10-5
F
I
T
P
t
=
D
P
t
T
p
t
F
I
0.005
0.01
0.02
0.05
D
10-4 10-3 10-2 10-1 100101 2
10s
0.1
0.2
0.5
1
=
-1
10
5
1
10
100
5
A
2002-02-21 6
F 0950A
Maßzeichnung
Chip Outlines
Maße werden als typische1) Wer te wie folgt an gegeben: mm (in ch) / Dimensions are specified as typical1) values as
follows: mm (inch).
GMOY6046
0.185 (0.0073)
0.115 (0.0045)
n-contact
p-contact
0.3 (0.0118)
F 0950A
2002-02-21 7
Published by OSRAM Opto Semiconductors GmbH
Wernerwerkstrasse 2, D-93049 Regensburg
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detaile d sp ec if ic at ion.
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Critical components5), may only be used in life-support devices or systems6) with the express written approval of
OSRAM OS.
1) Typical (refered to as typ.) data are defined as long-term production mean values and are only given for information.
This is not a spe cified value. For final e lectrical te sting a spot check with sufficient st atistical accura cy is carr ied out.
Minimum and maximum values( refered to as min. and max.) refer to the limits of the sample measurement.
2) Based on data measured in OSRAM Opto Semiconductor’s TO PLED® pac ka ge. T hey represent typical1) data.
3) Maximum ratings are strongly package dependent and may differ between different packages. The values given
represent the chip in an OSRAM OS TOPLED® pa ckage and are on ly valid for this package.
4) Value is refe renc ed to the vendor’s measurement syst em ( co rrelation to custom er produc t( s) is requ ired).
5)A critical component is a component used in a life-support device or system whose fail ure can reasonably be expected
to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system.
6)Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain
and sust ain human life. If th ey fail , it is reasonable t o as su m e th at the health of the us er m ay be endangered.
