2N5400
2N5401
SILICON
PNP TRANSISTORS
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N5400 and
2N5401 are silicon PNP transistors designed for
high voltage amplifier applications.
MARKING: FULL PART NUMBER
MAXIMUM RATINGS: (TA=25°C unless otherwise noted)
SYMBOL 2N5400 2N5401 UNITS
Collector-Base Voltage VCBO 130 160 V
Collector-Emitter Voltage VCEO 120 150 V
Emitter-Base Voltage VEBO 5.0 V
Continuous Collector Current IC 600 mA
Power Dissipation PD 625 mW
Power Dissipation (TC=25°C) PD 1.5 W
Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C
Thermal Resistance JA 200 °C/W
Thermal Resistance JC 83.3 °C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
2N5400 2N5401
SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNITS
ICBO V
CB=100V - 100 - - nA
ICBO V
CB=100V, TA=100°C - 100 - - μA
ICBO V
CB=120V - - - 50 nA
ICBO V
CB=120V, TA=100°C - - - 50 μA
IEBO V
EB=3.0V - 50 - 50 nA
BVCBO I
C=100μA 130 - 160 - V
BVCEO I
C=1.0mA 120 - 150 - V
BVEBO I
E=10μA 5.0 - 5.0 - V
VCE(SAT) I
C=10mA, IB=1.0mA - 0.2 - 0.2 V
VCE(SAT) I
C=50mA, IB=5.0mA - 0.5 - 0.5 V
VBE(SAT) I
C=10mA, IB=1.0mA - 1.0 - 1.0 V
VBE(SAT) I
C=50mA, IB=5.0mA - 1.0 - 1.0 V
hFE V
CE=5.0V, IC=1.0mA 30 - 50 -
hFE V
CE=5.0V, IC=10mA 40 240 60 240
hFE V
CE=5.0V, IC=50mA 40 - 50 -
fT V
CE=10V, IC=10mA, f=100MHz 100 400 100 300 MHz
Cob V
CB=10V, IE=0, f=1.0MHz - 6.0 - 6.0 pF
hfe V
CE=10V, IC=1.0mA, f=1.0kHz 30 200 40 200
NF VCE=5.0V, IC=250μA, RS=1.0kΩ,
f=10Hz to 15.7kHz - 8.0 - 8.0 dB
TO-92 CASE
R1 (5-December 2014)
www.centralsemi.com