Selection Guide RF-Transistors and MMICs MOS Field-Effect Transistors. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Dual-Gate GaAs FETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 GaAs FETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 AIGaAs/GaAs HEMTs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 GaAs Power FETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 GaAs Broadband Amplifiers. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Low-Noise Preamplifiers for Mobile Communications (PCN, DECT, GSM) . . . . . . . . . . . . . 4 Integrated Power Amplifiers for Mobile Communications . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Integrated Multi Mode and Dual Band Power Amplifiers for Mobile Communications. . . . . . 5 Variable Gain Amplifiers for Mobile Communications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Mixer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 RF-SPDT Switch . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 RF Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 SIEGET25-RF-BIPOLAR-Transistors. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 SIEGET45-RF-BIPOLAR-Transistors. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 RF-Dual Transistor Arrays . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Si MMICs Broadband Amplifiers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Si MMICs in SIEGET25-Technology . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Active Bias Controller. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Bipolar-Transistor Characteristic Curves . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 AF-Transistors General Purpose Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Double Transistor Arrays . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Double Transistors. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Low-Noise Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Digital Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Double Digital Transistors Array . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Switching Transistors. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 Darlington Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 High-Voltage Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 RF-Diodes Varactor (Tuning) Diodes. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 Varactor (Tuning) Diodes Characteristic Curves . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 PIN Diodes (General Purpose, Switching) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 Electrostatic-Discharge-Protection Diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 AF-Schottky Diodes/RF-Schottky Diodes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29 Schottky Detector Diodes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32 Schottky-Diodes Characteristic Curves . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32 AF-Diodes General Purpose, Switching and Rectifier Diodes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33 Diode Arrays . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34 AF-Low-Leakage Diodes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34 Bridge Rectifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34 Leaded Components . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35 Semiconductor Group 1 1998-11-01 Selection Guide RF-Transistors and MMICs MOS Field-Effect Transistors Type Characteristics (TA = 25 C) Maximum Ratings Package VDS ID Ptot Gps F VDS ID f gfs V mA mW dB dB V mA MHz mS BF 998 12 30 200 20 1.00 8 10 800 24 SOT-143 BF 998W 12 30 200 20 1.00 8 10 800 24 SOT-343 BF 1005 8 25 200 18 1.40 5 10 800 24 SOT-143 BF 1005S 8 25 200 19 1.60 5 12 800 30 SOT-143 BF 1009 12 25 200 20 1.00 9 13 800 24 SOT-143 BF 1009S 12 25 200 22 1.40 9 12 800 30 SOT-143 BF 1012 16 25 200 20 1.00 12 10 800 24 SOT-143 BF 1012S 16 25 200 22 1.40 12 12 800 30 SOT-143 BF 2000 12 30 200 22 1.1 5 10 800 24 SOT-143 BF 2000W 12 30 200 22 1.1 5 10 800 24 SOT-343 BF 2030 14 40 200 2.0 5 10 800 31 SOT-143 BF 2030W 14 40 200 2.0 5 10 800 31 SOT-343 BF 2040 14 40 200 2.0 5 15 800 45 SOT-143 BF 2040W 14 40 200 2.0 5 15 800 45 SOT-343 BF 543 20 30 200 22 1.00 10 4 200 12 SOT-23 BF 999 20 30 200 25 1.00 10 10 200 16 SOT-23 Tetrode Triode New type Dual-Gate GaAs FETs Type Characteristics (TA = 25 C) Description CF 739 Dual-Gate GaAs FET CF 750 Biased Dual Gate GaAs FET for frequencies from 400 MHz to 3 GHz Semiconductor Group Package IDS VDS f F Gps mA V GHz dB dB 10 2.5 - 6 1.8 1.8 17 SOT-143 3.8 1.8 1.9 10 SOT-143 2 2 1998-11-01 Selection Guide GaAs FETs Type Characteristics (TA = 25 C) Description Package IDS VDS f gm F Ga mA V GHz mS dB dB CFY 30 Low Noise, High Gain GaAs FET 15 3.5 4 30 1.4 11.5 SOT-143 CFY 35-20 Low Noise, High Gain GaAs FET 10 2.5 12 30 1.9 8.5 MW-4 CFY 35-23 Low Noise, High Gain GaAs FET 10 2.5 12 30 2.2 8.5 MW-4 AIGaAs/GaAs HEMTs Type Characteristics (TA = 25 C) Description Package IDS VDS f gm F Ga mA V GHz mS dB dB CFY 77-08 Low Noise, High Gain HEMT 15 for front end amplifiers up to 20 GHz 2 12 65 0.7 10.5 MW-4 CFY 77-10 Low Noise, High Gain HEMT 15 for front end amplifiers up to 20 GHz 2 12 65 0.9 10 MW-4 GaAs Power FETs Type Characteristics (TA = 25 C) Description Package IDS VDS f Gp P-1dB mA V GHz dB dBm CLY 2 Power Ampl. for frequencies 180 up to 3 GHz 3 1.8 14.5 23.5 MW-6 CLY 5 Power Ampl. for frequencies 350 up to 2.5 GHz 3 1.8 9.5 26.5 SOT-223 CLY 10 Power Ampl. for frequencies 700 up to 2.5 GHz 3 1.8 8 28.5 SOT-223 CLY 15* Power Ampl. for frequencies 1400 up to 2.5 GHz 3 1.8 6 31.5 SOT-223 * Pulsed operation Semiconductor Group 3 1998-11-01 Selection Guide GaAs Broadband Amplifiers Type Characteristics (TA = 25 C) VDS = 4.5 V Description ID f mA G dB F P- 1 dB dB dB dBm G MHz Package 60 200 ... 1000 800 ... 1800 10.0 8.5 0.4 1.1 3.0 3.0 16 16 SOT-143 Two stage MMIC amplifier 160 200 ... 1800 15.0 3.0 4.8 19 MW-7 Two stage MMIC amplifier 130 200 ... 1800 2500 19.0 15.0 2.0 - 3.5 - 17.5 - MW-6 CGY 50 Single stage MMIC amplifier 100 MHz to 3 GHz CGY 52 CGY 62 Low Noise Preamplifiers for Mobile Communications Type Characteristics (TA = 25 C) VDS = 3 V Description Package ID f Gp F IP3INPUT P- 1 dB mA MHz dB dB dBm dBm CGY 59 Single stage MMIC amplifier 100 MHz to 3 GHz 6 950 1850 16.5 12.0 1.3 1.7 -4 1 5 4 MW-6 CGY 60 6 Single stage MMIC amplifier 100 MHz to 3 GHz with internal match to 50 at 1.7 ... 2 GHz 950 1850 15.5 12.5 1.35 1.9 - 3.0 0 5 5 MW-6 Integrated Power Amplifiers for Mobile Communications Type Characteristics (TA = 25 C) Description Package ID VD f Gp POut A V GHz dB dBm Two stage PA for GSM applications 1.8 3.5 0.9 25.5 35.5 MW-16 Two stage PA for GSM or AMPS applications 1.2 3.6 0.9 23.6 33.6 MW-12 PA for GSM900 applications 1.8 3.5 0.9 35.5 35.5 MW-16 CGY 180 PA for DECT and PCS applications 0.45 3.0 1.89 27 27 MW-12 CGY 181 PA for PCN/PCS applications 1.2 3.6 1.75 15.5 31.5 MW-12 Four stage PA for PCN applications 1.67 3.5 1.8 34 34 MW-16 CGY 195 PA for DECT applications 0.45 3.0 1.89 18 27 SCT-595 CGY 196 PA for DECT applications 0.11 3.0 1.89 32 26 SCT-598 CGY 93P CGY 94 CGY 96 CGY 184 All power amplifiers in pulsed operation mode New type Semiconductor Group 4 1998-11-01 Selection Guide Integrated Multi Mode and Dual Band Power Amplifiers for Mobile Communications Type CGY 81 CGY 191 CGY 0819 CGY 0918 CGY 98 Description Characteristics (TA = 25 C) Mode/Band Package Iop VD f Gp POut PAE A V MHz dB dBm % AMPS - 3.5 824 - 849 24 31.5 55 CDMA - 3.5 824 - 849 28 28 35 TDMA - 3.5 824 - 849 27 30 40 CDMA [PCS] - 3.5 1850 - 1910 24 29 40 TDMA [PCS] - 3.5 1850 - 1910 24 29 40 - 3.5 824 - 849 24 31.5 55 - 3.5 824 - 849 28 28 35 - 3.5 824 - 849 27 30 40 CDMA [PCS] - 3.5 1850 - 1910 24 29 40 TDMA [PCS] - 3.5 1850 - 1910 24 29 40 GSM 1.6 3.5 880 - 915 25 35 55 PCN 1.4 3.5 1710 - 1785 24 34 45 GSM Broadband PA; Matchable for GSM / PCN PCN 1.6 3.5 880 - 915 23 35 55 1.6 3.5 1710 - 1785 19 34 45 Tri mode PA for AMPS/ CDMA / TDMA Dual mode PA for CDMA /TDMA Dual Band Tri Mode AMPS PA for AMPS/ CDMA CDMA /TDMA TDMA Dual Band PA for GSM /PCN MW-16 MW-16 MW-16 MW-16 SCT-595 New type Variable Gain Amplifiers for Mobile Communications Type Characteristics (TA = 25 C) Description Package ID VDS f G V GHz dB G dB P- 1dB mA 45 45 3 3 0.9 1.8 22 20 55 55 14 14 MW-6 CGY 121A Variable gain amplifier for 45 GSM/PCN/CDMA applications 45 3 3 0.9 1.8 19 17.5 53 53 14 14 MW-6 CGY 121B Variable gain amplifier for 70 GSM/PCN/CDMA applications 70 3 3 0.9 1.8 21.5 19.5 55 55 16 16 MW-6 CGY 120 Variable gain amplifier for GSM/PCN applications dBm New type Semiconductor Group 5 1998-11-01 Selection Guide Mixer Type Characteristics (TA = 25 C) Description Iop VD mA V Frequency Range GC MHz dB Package IP3INPUT FSSB PLO dBm dB dBm CF 750 General purpose dual gate 2.5 GaAs FET mixer 3.8 fRF, LO, IF 2000 15 -5 4.5 -3 SOT-143 CMY 91 Mixer with integrated IF amplifilter 2.5 3 fIF 200 fRF 2500 9.5 0 8 -3 MW-6 CMY 200 Ultralinear downconverter 1200 MHz to 40 MHz 50 5 fIF = 30 ... 100 8 fLO = 1000 ... 1400 21.5 8 -5 MW-6 CMY 210 Ultralinear broadband mixer 7 with integrated LO-buffer 3 fLO = 500 ... 2500 - 6.0 23 fRF, fIF 2500 6.0 0 MW-6 Linear mixer with integrated 2.5 LO-buffer 3 fLO = 500 ... 2500 - 6.5 17.5 fRF, fIF < 3500 6.5 0 MW-6 CMY 211 New type RF-SPDT Switch Type Characteristics (TA = 25 C) Description f Insertion Loss Isolation dB P- 1dB dBm dB GHz CSY 240 Package RF-SPDT switch for mobile 0.9 communication applications 1.8 0.3 0.5 28 22 30 MW-6 New type RF Transistors Type N = NPN P = PNP Characteristics (TA = 25 C) Maximum Ratings VCE0 IC Ptot fT V mA mW F Gma Gms IC VCE f GHz dB mA V MHz dB IC VCE f mA V MHz Package Chip Code BF 517 N 15 25 280 2.50 3.5 2 5 800 11.0 14 5 800 SOT-23 17 BF 569 P 35 30 280 0.95 4.5 3 10 800 12.5 3 10 800 SOT-23 23 BF 660 P 30 25 280 0.70 - - - - 9.2 3 10 800 SOT-23 24 BF 660W P 30 25 280 0.70 - - - - 9.2 3 10 800 SOT-323 24 BF 770A N 12 50 300 6.00 2 5 8 900 13.5 30 8 900 SOT-23 15 BF 771 N 12 80 580 8.00 1.3 10 8 900 14.5 30 8 900 SOT-23 6 BF 771W N 12 80 580 8.00 1.3 10 8 900 15.5 30 8 900 SOT-323 6 BF 772 N 12 80 580 8.00 1.3 10 8 900 17.5 30 8 900 SOT-143 6 BF 775 N 15 30 280 5.00 1.8 2 6 900 15.0 15 8 900 SOT-23 13 Not for new design Semiconductor Group 6 1998-11-01 Selection Guide RF Transistors (cont'd) Characteristics (TA = 25 C) Maximum Ratings Type N = NPN P = PNP VCE0 IC Ptot fT F V mA mW GHz dB Gma Gms IC VCE f mA V MHz dB IC VCE f mA V MHz Package Chip Code BF 775A N 16 30 280 5.80 1.45 5 8 900 16.0 15 8 900 SOT-23 14 BF 775W N 15 30 280 5.00 1.8 2 6 900 15.5 15 8 900 SOT-323 13 BF 799 N 20 35 280 1.10 3.0 5 10 100 11.2 5 10 800 SOT-23 18 BF 799W N 20 35 280 1.10 3.0 5 10 100 11.2 5 10 800 SOT-323 18 BF 840 N 40 25 280 0.38 1.7 1 10 0.1 - - - - SOT-23 19 BF 841 N 40 25 280 0.38 1.7 1 10 0.1 - - - - SOT-23 19 N 15 100 1000 5.50 2.5 20 8 900 13.5 70 8 900 SOT-223 16 BFG 135A N 15 150 1000 6.00 2.0 30 8 900 14.0 100 8 900 SOT-223 8 BFG 193 N 12 80 600 8.00 1.3 10 8 900 15.5 30 8 900 SOT-223 6 BFG 194 P 15 100 1000 5.00 2.8 20 8 900 11.0 70 8 900 SOT-223 22 BFG 196 N 12 100 800 7.50 1.5 20 8 900 14.0 50 8 900 SOT-223 7 BFG 235 N 15 300 2000 5.50 2.7 60 8 900 12.0 200 8 900 SOT-223 9 BFP 81 N 16 30 280 5.80 1.45 5 8 900 21.0 15 8 900 SOT-143 14 BFP 93A N 12 50 300 6.00 2.0 5 8 900 18.0 30 8 900 SOT-143 15 BFP 136W N 12 150 1000 5.50 3.3 30 5 1800 9.5 5 1800 SOT-343 8 BFP 180 N 8 4 30 7.00 2.25 1 5 1800 12.0 1 5 1800 SOT-143 1 BFP 180W N 8 4 30 7.00 2.25 1 5 1800 11.5 1 5 1800 SOT-343 1 BFP 181 N 12 20 175 8.00 1.8 2 8 1800 16.5 5 8 1800 SOT-143 3 BFP 181R N 12 20 175 8.00 1.8 2 8 1800 16.5 5 8 1800 SOT-143R 3 BFP 181W N 12 20 175 8.00 1.8 2 8 1800 16.5 5 8 1800 SOT-343 3 BFP 182 N 12 35 250 8.00 1.9 3 8 1800 15.0 10 8 1800 SOT-143 4 BFP 182R N 12 35 250 8.00 1.9 3 8 1800 15.0 10 8 1800 SOT-143R 4 BFP 182W N 12 35 250 8.00 1.9 3 8 1800 15.5 10 8 1800 SOT-343 4 BFP 183 N 12 65 250 8.00 2.0 5 8 1800 14.0 15 8 1800 SOT-143 5 BFP 183R N 12 65 250 8.00 2.0 5 8 1800 14.0 15 8 1800 SOT-143R 5 BFP 183W N 12 65 450 8.00 2.0 5 8 1800 14.5 15 8 1800 SOT-343 5 BFP 193 N 12 80 580 8.00 2.1 10 8 1800 11.5 30 8 1800 SOT-143 6 BFP 193W N 12 80 580 8.00 2.1 10 8 1800 13.0 30 8 1800 SOT-343 6 BFP 194 P 15 100 700 5.00 2.8 20 8 900 12.0 70 8 900 22 BFP 196 N 12 100 700 7.50 2.5 20 8 1800 10.0 50 8 1800 SOT-143 7 BFP 196W N 12 100 700 7.50 2.5 20 8 1800 11.5 50 8 1800 SOT-343 7 BFP 280 N 8 10 80 7.50 2.0 1.5 5 1800 15.0 3 5 1800 SOT-143 2 BFP 280W N 8 10 80 7.50 2.0 1.5 5 1800 15.0 3 5 1800 SOT-343 2 BFG 19S 80 SOT-143 Not for new design Semiconductor Group 7 1998-11-01 Selection Guide RF Transistors (cont'd) Characteristics (TA = 25 C) Maximum Ratings Type N = NPN P = PNP VCE0 IC Ptot fT F V mA mW GHz dB Gma Gms IC VCE f mA V MHz dB 20 8 900 Package Chip Code IC VCE f mA V MHz 11.5 70 8 900 SOT-89 16 BFQ 19S N 15 75 1000 5.50 2.5 BFQ 81 N 16 30 280 5.80 1.45 5 8 900 16.0 15 8 900 SOT-23 14 BFQ 193 N 12 80 600 7.50 1.3 10 8 900 14.0 30 8 900 SOT-89 6 BFR 35AP N 15 30 280 5.00 1.8 2 6 900 15.0 15 8 900 SOT-23 13 BFR 92P N 15 30 280 5.00 1.8 2 6 900 15.0 15 8 900 SOT-23 13 BFR 92W N 15 30 280 5.00 1.8 2 6 900 15.5 15 8 900 SOT-323 13 BFR 93A N 12 50 300 6.00 2.0 5 8 900 13.5 30 8 900 SOT-23 15 BFR 93AW N 12 50 300 6.00 2.0 5 8 900 15.0 30 8 900 SOT-323 15 BFR 106 N 15 100 700 5.00 2.5 20 8 900 12.5 70 8 900 SOT-23 16 BFR 180 N 8 4 30 7.00 2.1 1 5 900 13.5 1 5 900 SOT-23 1 BFR 180W N 8 4 30 7.00 2.1 1 5 900 13.5 1 5 900 SOT-323 1 BFR 181 N 12 20 175 8.00 1.45 2 8 900 18.0 5 8 900 SOT-23 3 BFR 181W N 12 20 175 8.00 1.45 2 8 900 18.5 5 8 900 SOT-323 3 BFR 182 N 12 35 250 8.00 1.2 3 8 900 17.5 10 8 900 SOT-23 4 BFR 182W N 12 35 250 8.00 1.2 3 8 900 19.0 10 8 900 SOT-323 4 BFR 183 N 12 65 450 8.00 1.2 5 8 900 16.5 15 8 900 SOT-23 5 BFR 183W N 12 65 450 8.00 1.2 5 8 900 18.0 15 8 900 SOT-323 5 BFR 193 N 12 80 580 8.00 1.3 10 8 900 14.5 30 8 900 SOT-23 6 BFR 193W N 12 80 580 8.00 1.3 10 8 900 15.5 30 8 900 SOT-323 6 BFR 194 P 15 100 700 5.00 2.8 20 8 900 10.0 70 8 900 SOT-23 22 BFR 280 N 8 10 80 7.50 1.5 1.5 5 900 17.0 3 5 900 SOT-23 2 BFR 280W N 8 10 80 7.50 1.5 1.5 5 900 17.0 3 5 900 SOT-323 2 BFS 17P N 15 25 280 2.50 3.5 2 5 800 11.0 14 5 800 SOT-23 17 BFS 17W N 15 25 280 2.50 3.5 2 5 800 11.0 14 5 800 SOT-323 17 BFT 92 P 15 25 200 5.00 2.0 2 8 900 13.5 15 8 900 SOT-23 20 BFT 92W P 15 25 200 5.00 2.0 2 8 900 14.0 15 8 900 SOT-323 20 BFT 93 P 12 35 300 5.50 2.7 2 8 900 11.5 30 8 900 SOT-23 21 Not for new design Semiconductor Group 8 1998-11-01 Selection Guide SIEGET(R)25-RF-BIPOLAR-Transistors Type N = NPN P = PNP Characteristics (TA = 25 C) Maximum Ratings VCE0 IC Ptot fT Fmin V mA mW GHz dB BFP 405 N 4.5 12 55 25 BFP 420 N 4.5 35 160 BFP 450 N 4.5 100 450 BFP 490 N 4.5 600 1000 17.5 - Gma Gms Package Chip Code IC VCE f IC VCE f mA V MHz dB mA V MHz 1.15 2 2 1800 22 5 2 1800 SOT-343 10 25 1.05 5 2 1800 20 20 2 1800 SOT-343 11 24 1.25 10 2 1800 14 50 2 1800 SOT-343 12 - 1800 9.5 200 2 1800 SCT-595 - - New type SIEGET(R)45-RF-BIPOLAR-Transistors Type N = NPN P = PNP BFP 520 Characteristics (TA = 25 C) Maximum Ratings VCE0 IC Ptot fT Fmin V mA mW GHz dB N 2.5 40 100 45 Gma Gms Package Chip Code IC VCE f IC VCE f mA V MHz dB mA V MHz 2 1800 23 20 2 1800 SOT-343 - 0.95 2 New type RF-Dual Transistor Arrays Characteristics (TA = 25 C) Maximum Ratings Type N = NPN P = PNP VCE0 IC Ptot fT V mA mW Fmin Gma Gms Package Chip Code IC VCE f IC VCE f GHz dB mA V MHz dB mA V MHz 1.5 5 900 18 3 5 900 SOT-363 2 5 8 900 SOT-363 3 BFS 480 N 8 10 80 7.50 1.5 BFS 481 N 12 20 175 8.00 1.45 2 8 900 19 BFS 482 N 12 20 250 8.00 1.2 3 8 900 19.5 10 8 900 SOT-363 4 BFS 483 N 12 65 450 8.00 1.2 5 8 900 19 15 8 900 SOT-363 5 BFS 17S N 15 25 280 2.50 3.5 2 5 800 11.0 14 5 800 SOT-363 17 Semiconductor Group 9 1998-11-01 Selection Guide Si MMlCs Broadband Amplifiers Type Characteristics (TA = 25 C; VD = 4.7 V; ZO = 50 ) Maximum Ratings Package ID Ptot NF dB MHz Gain dB NF dB f mW Gain dB f mA BGA 310 60 250 10 6.0 100 9 6.5 1000 SOT-143 BGA 312 60 250 12 5.5 100 11 6.0 1000 SOT-143 BGA 318 60 250 18 3.5 100 16 4.0 1000 SOT-143 Characteristics (TA = 25 C; VD = 3.0 V; ZO = 50 ) Package MHz Si MMICs in SIEGET(R)25 Technology Type N = NPN P = PNP Maximum Ratings ID Ptot NF dB MHz Gain dB NF dB f mW Gain dB f mA BGA 420 15 90 19 1.9 100 13 2.2 1800 SOT-343 BGA 425 25 150 27 1.9 100 18.5 2.2 1800 SOT-363 BGA 427 25 150 27 1.9 100 18.5 2.2 1800 SOT-343 MHz New type Active Bias Controller Stabilizing bias current for RF transistors, NPN transistors (IC up to 250 mA) and FETs Type Maximum Ratings VCC DC Characteristics with stabilized NPN transistors: Relative Change of IC / IC vs hFE vs VS IC / IC vs TA Package V BCR 400R 15 0.08 x hFE / hFE 0.15 x VS / VS 0.2% / K SOT-143 BCR 400W 15 0.08 x hFE / hFE 0.15 x VS / VS 0.2% / K SOT-343 Semiconductor Group 10 1998-11-01 Selection Guide Bipolar-Transistor Characteristic Curves The curve numbers refer to the chip codes in the preceding tables. Transition frequency fT vs. collector current IC NPN Types Semiconductor Group 11 1998-11-01 Selection Guide NPN Types PNP Types Semiconductor Group 12 1998-11-01 Selection Guide AF-Transistors General Purpose Transistors Type N = NPN P = PNP Characteristics (TA = 25 C) Maximum Ratings VCE0 ICM Ptot fT V mW MHz nA mA ICB0 Package VCB0 hFE IC VCE VCEsat IC IB V mA V mA mA V BC 807 P 45 1000 330 200 100 25 100 - 630* 100 1 0.70 500 50 SOT-23 BC 807W P 45 1000 250 200 100 25 100 - 630* 100 1 0.70 500 50 SOT-323 BC 808 P 25 1000 330 200 100 25 100 - 630* 100 1 0.70 500 50 SOT-23 BC 808W P 25 1000 250 200 100 25 100 - 630* 100 1 0.70 500 50 SOT-323 BC 817 N 45 1000 330 170 100 25 100 - 630* 100 1 0.70 500 50 SOT-23 BC 817W N 45 1000 250 170 100 25 100 - 630* 100 1 0.70 500 50 SOT-323 BC 818 N 25 1000 330 170 100 25 100 - 630* 100 1 0.70 500 50 SOT-23 BC 818W N 25 1000 250 170 100 25 100 - 630* 100 1 0.70 500 50 SOT-323 BC 846 N 65 200 330 250 15 30 110 - 450* 2 5 0.60 100 5 SOT-23 BC 846W N 65 200 250 250 15 30 110 - 450* 2 5 0.60 100 5 SOT-323 BC 847 N 45 200 330 250 15 30 110 - 800* 2 5 0.60 100 5 SOT-23 BC 847W N 45 200 250 250 15 30 110 - 800* 2 5 0.60 100 5 SOT-323 BC 848 N 30 200 330 250 15 30 110 - 800* 2 5 0.60 100 5 SOT-23 BC 848W N 30 200 250 250 15 30 110 - 800* 2 5 0.60 100 5 SOT-323 BC 856 P 65 200 330 250 15 30 125 - 475* 2 5 0.60 100 5 SOT-23 BC 856W P 65 200 250 250 15 30 125 - 475* 2 5 0.60 100 5 SOT-323 BC 857 P 45 200 330 250 15 30 125 - 800* 2 5 0.60 100 5 SOT-23 BC 857W P 45 200 250 250 15 30 125 - 800* 2 5 0.60 100 5 SOT-323 BC 858 P 30 200 330 250 15 30 125 - 800* 2 5 0.60 100 5 SOT-23 BC 858W P 30 200 250 250 15 30 125 - 800* 2 5 0.60 100 5 SOT-323 BCP 51 P 45 1500 1500 125 100 30 40 - 250* 150 2 0.50 500 50 SOT-223 P 45 1500 1000 125 < 100 30 40 - 250* 150 2 < 0.50 500 50 SCT-595 P 60 1500 1500 125 100 30 40 - 250* 150 2 0.50 500 50 SOT-223 P 60 1500 1000 125 < 100 30 40 - 250* 150 2 < 0.50 500 50 SCT-595 P 80 1500 1500 125 100 30 40 - 250* 150 2 0.50 500 50 SOT-223 P 80 1500 1000 125 < 100 30 40 - 250* 150 2 < 0.50 500 50 SCT-595 N 45 1500 1500 100 100 30 40 - 250* 150 2 0.50 500 50 SOT-223 N 45 1700 1000 100 < 100 30 40 - 250* 150 2 < 0.50 500 50 SCT-595 N 60 1500 1500 100 100 30 40 - 250* 150 2 0.50 500 50 SOT-223 N 60 1700 1500 100 < 100 30 40 - 250* 150 2 < 0.50 500 50 SCT-595 N 80 1500 1500 100 100 30 40 - 250* 150 2 0.50 500 50 SOT-223 N 80 1700 1500 100 < 100 30 40 - 250* 150 2 < 0.50 500 50 SCT-595 BCP 51M BCP 52 BCP 52M BCP 53 BCP 53M BCP 54 BCP 54M BCP 55 BCP 55M BCP 56 BCP 56M New type Semiconductor Group 13 1998-11-01 Selection Guide General Purpose Transistors (cont'd) Type N = NPN P = PNP Characteristics (TA = 25 C) Maximum Ratings VCE0 ICM Ptot fT V mW MHz nA mA ICB0 Package VCB0 hFE IC VCE VCEsat IC IB V mA V mA mA V BCP 68 N 20 2000 1500 100 100 25 85 - 400* 500 1 0.50 1000 100 SOT-223 BCP 69 P 20 2000 1500 100 100 25 85 - 400* 500 1 0.50 1000 100 SOT-223 BCP 70M P 32 3000 1700 100 100 30 85 - 475* 500 1 0.4 2000 200 SCT-595 BCP 71M P - 3000 1700 - - - - - - SCT-595 BCP 72M P 10 3000 1700 100 100 8 85 - 475* 500 1 0.3 2000 200 BCW 60 N 32 200 330 250 20 32 120 - 630* 2 5 0.25 10 0.25 SOT-23 BCW 61 P 32 200 330 250 20 32 120 - 630* 2 5 0.25 10 0.25 SOT-23 BCW 65 N 32 1000 330 170 20 32 100 - 630* 100 1 0.70 500 50 SOT-23 BCW 66 N 45 1000 330 170 20 45 100 - 630* 100 1 0.70 500 50 SOT-23 BCW 67 P 32 1000 330 200 20 32 100 - 630* 100 1 0.70 500 50 SOT-23 BCW 68 P 45 1000 330 200 20 45 100 - 630* 100 1 0.70 500 50 SOT-23 BCX 41 N 125 1000 330 100 100 100 63 100 1 0.90 300 30 SOT-23 BCX 42 P 125 1000 330 150 100 100 63 100 1 0.90 300 30 SOT-23 BCX 51 P 45 1500 1000 125 100 30 40 - 250* 150 2 0.50 500 50 SOT-89 BCX 52 P 60 1500 1000 125 100 30 40 - 250* 150 2 0.50 500 50 SOT-89 BCX 53 P 80 1500 1000 125 100 30 40 - 250* 150 2 0.50 500 50 SOT-89 BCX 54 N 45 1500 1000 100 100 30 40 - 250* 150 2 0.50 500 50 SOT-89 BCX 55 N 60 1500 1000 100 100 30 40 - 250* 150 2 0.50 500 50 SOT-89 BCX 56 N 80 1500 1000 100 100 30 40 - 250* 150 2 0.50 500 50 SOT-89 BCX 68 N 20 2000 1000 100 100 25 85 - 400* 500 1 0.50 1000 100 SOT-89 BCX 69 P 20 2000 1000 100 100 25 85 - 400* 500 1 0.50 1000 100 SOT-89 BCX 70 N 45 200 330 250 20 45 120 - 630* 2 5 0.25 10 0.25 SOT-23 BCX 71 P 45 200 330 250 20 45 120 - 630* 2 5 0.25 10 0.25 SOT-23 BDP 947 N 45 5000 1500 100 100 45 40 - 475 500 1 0.8 2000 200 SOT-223 BDP 948 P 45 5000 1500 100 100 45 40 - 475 500 1 0.8 2000 200 SOT-223 BDP 949 N 60 5000 1500 100 100 60 40 - 475 500 1 0.8 2000 200 SOT-223 BDP 950 P 60 5000 1500 100 100 60 40 - 475 500 1 0.8 2000 200 SOT-223 BDP 951 N 80 5000 1500 100 100 80 40 - 475 500 1 0.8 2000 200 SOT-223 BDP 952 P 80 5000 1500 100 100 80 40 - 475 500 1 0.8 2000 200 SOT-223 BDP 953 N 100 5000 1500 100 100 100 40 - 475 500 1 0.8 2000 200 SOT-223 BDP 954 P 100 5000 1500 100 100 100 40 - 475 500 1 0.8 2000 200 SOT-223 BDP 955 N 120 5000 1500 100 100 120 40 - 475 500 1 0.8 2000 200 SOT-223 BDP 956 P 120 5000 1500 100 100 120 40 - 475 500 1 0.8 2000 200 SOT-223 SMBTA 05 N 60 100 60 100 100 1 0.25 100 500 330 100 - - - 10 SCT-595 SOT-23 New type Semiconductor Group 14 1998-11-01 Selection Guide General Purpose Transistors (cont'd) Characteristics (TA = 25 C) Maximum Ratings Type N = NPN P = PNP VCE0 ICM Ptot fT V mA mW MHz nA N 80 500 330 100 100 80 100 100 1 0.25 100 10 SOT-23 SMBTA 06M N 80 500 330 100 100 80 100 100 1 0.25 100 10 SCT-595 0.25 10 1 SOT-23 SMBTA 06 ICB0 Package VCB0 hFE IC VCE VCEsat IC IB V mA V mA mA V SMBTA 20 N 40 200 330 125 100 30 40 - 400 5 SMBTA 55 P 60 500 330 100 100 60 100 100 1 0.25 100 10 SOT-23 SMBTA 56 P 80 500 330 100 100 80 100 100 1 0.25 100 10 SOT-23 SMBTA 56M P 80 500 330 100 100 80 100 100 1 0.25 100 10 SCT-595 200 330 125 100 30 40 - 400 5 0.25 10 1 SOT-23 SMBTA 70 P 40 10 10 * Available in hFE subgroups New type Type N = NPN P = PNP Characteristics (TA = 25 C) Maximum Ratings VCE0 ICM Ptot fT V mW MHz nA mA ICB0 Package VCB0 hFE IC VCE VCEsat IC IB V mA V V mA mA Double Transistor Arrays BC 846PN N/P 65 200 330 250 15 30 110 - 450* 2 5 0.60 100 5 SOT-363 BC 846S 65 200 330 250 15 30 110 - 450* 2 5 0.60 100 5 SOT-363 BC 847PN N/P 45 200 250 250 15 30 290 2 5 0.60 100 5 SOT-363 BC 847S N 45 200 250 250 15 30 290 2 5 0.60 100 5 SOT-363 BC 856S P 65 200 330 250 15 30 125 - 475* 2 5 0.60 100 5 SOT-363 BC 857S P 45 200 250 250 15 30 290 2 5 0.60 100 5 SOT-363 SMBT 3904S N 40 200 250 300 50 30 100 - 300 10 1 0.30 50 5 SOT-363 SMBT 3904PN N/P 40 200 250 250 50 30 100 - 300 10 1 0.4 50 5 SOT-363 SMBT 3906S P 200 250 250 50 30 100 - 300 10 1 0.4 50 5 SOT-363 N 40 New type Semiconductor Group 15 1998-11-01 Selection Guide Type N = NPN P = PNP Characteristics (TA = 25 C) Maximum Ratings VCE0 ICM Ptot fT V mW MHz nA mA ICB0 Package VCB0 hFE IC VCE VCEsat IC IB V mA V V mA mA Double Transistors BCV 61 N 30 200 300 250 15 30 110 - 800* 2 5 0.60 100 5 SOT-143 BCV 62 P 30 200 300 250 15 30 125 - 800* 2 5 0.65 100 5 SOT-143 Low-Noise Transistors BC 849 N 30 200 330 250 15 30 200 - 800* 2 5 0.25 10 0.5 SOT-23 BC 849W N 30 200 250 250 15 30 200 - 800* 2 5 0 25 10 0.5 SOT-323 BC 850 N 45 200 330 250 15 30 200 - 800* 2 5 0.25 10 0.5 SOT-23 BC 850W N 45 200 250 250 15 30 200 - 800* 2 5 0.25 10 0.5 SOT-323 BC 859 P 30 200 330 250 15 30 125 - 800* 2 5 0.3 10 0.5 SOT-23 BC 859W P 30 200 250 250 15 30 125 - 800* 2 5 0.3 10 0.5 SOT-323 BC 860 P 45 200 330 250 15 30 220 - 800* 2 5 0.3 10 0.5 SOT-23 BC 860W P 45 200 250 250 15 30 220 - 800* 2 5 0.3 10 0.5 SOT-323 BCW 60FF,FN N 32 200 330 250 20 32 250 - 630* 2 5 0.25 10 0.25 SOT-23 BCW 61FF,FN P 32 200 330 250 20 32 250 - 630* 2 5 0.25 10 0.25 SOT-23 SMBT 5086 P 50 50 330 40 50 35 150 10 5 0.30 10 1 SOT-23 SMBT 5087 P 50 50 330 40 50 35 250 10 5 0.30 10 1 SOT-23 SMBT 6428 N 50 200 330 100 10 30 250 10 5 0.2 10 0.5 SOT-23 SMBT 6429 N 45 200 330 100 10 30 500 10 5 0.2 10 0.5 SOT-23 * Available in hFE subgroups Semiconductor Group 16 1998-11-01 Selection Guide Digital Transistors Type N = NPN P = PNP Maximum Ratings VCE0 Vi (on) IC V Ptot Characteristics (TA = 25 C) Resistance Value R1 hFE (min.) Vi (on) min Package R2 fT 100 mA/ 5V V mA mW k k MHz IC = 5 mA 2 mA/ 10 mA/5 V VCE = 5 V 0.3 V Vi (off) max BCR 108 N 50 10 100 200 2.2 47.0 170 70 0.5 0.8 SOT-23 BCR 108W N 50 10 100 250 2.2 47.0 170 70 0.5 0.8 SOT-323 BCR 112 N 50 15 100 200 4.7 4.7 140 20 1.0 1.5 SOT-23 BCR 116 N 50 15 100 200 4.7 47.0 160 70 0.5 0.8 SOT-23 BCR 116 W N 50 15 100 250 4.7 47.0 160 70 0.5 0.8 SOT-323 BCR 119 N 50 15 100 200 4.7 - 150 120 0.5 0.8 SOT-23 BCR 133 N 50 20 100 330 10.0 10.0 130 30 1.0 1.5 SOT-23 BCR 133W N 50 20 100 250 10.0 10.0 130 30 1.0 1.5 SOT-323 BCR 135 N 50 20 100 200 10.0 47.0 150 70 0.5 1.0 SOT -23 BCR 135W N 50 20 100 250 10.0 47.0 150 70 0.5 1.0 SOT-323 BCR 141 N 50 30 100 200 22.0 22.0 130 50 1.0 1.5 SOT-23 BCR 141W N 50 30 100 250 22.0 22.0 130 50 1.0 1.5 SOT-323 BCR 142 N 50 30 100 200 22.0 47.0 150 70 1.5 1.2 SOT-23 BCR 142W N 50 30 100 250 22.0 47.0 150 70 1.5 1.2 SOT-323 BCR 146 N 50 50 70 200 47.0 22.0 150 50 1.5 2.6 SOT-23 BCR 146W N 50 50 70 250 47.0 22.0 150 50 1.5 2.6 SOT-323 BCR 148 N 50 50 70 200 47.0 47.0 100 70 1.0 1.5 SOT-23 BCR 148W N 50 50 70 250 47.0 47.0 100 70 1.0 1.5 SOT-323 BCR 158 P 50 10 100 200 2.2 47.0 200 70 0.5 0.8 SOT-23 BCR 158W P 50 10 100 250 2.2 47.0 200 70 0.5 0.8 SOT-323 BCR 162 P 50 15 100 200 4.7 4.7 200 20 1.0 1.5 SOT-23 BCR 166 P 50 15 100 200 4.7 47.0 160 70 0.5 0.8 SOT-23 BCR 166W P 50 15 100 250 4.7 47.0 160 70 0.5 0.8 SOT-323 BCR 169 P 50 15 100 200 4.7 - 200 120 0.5 0.8 SOT-23 BCR 183 P 50 20 100 200 10.0 10.0 200 30 1.0 1.5 SOT-23 BCR 185 P 50 20 100 200 10.0 47.0 200 70 0.5 1.0 SOT-23 BCR 185W P 50 20 100 250 10.0 47.0 200 70 0.5 1.0 SOT-323 BCR 191 P 50 30 100 200 22.0 22.0 200 50 1.0 1.5 SOT-23 BCR 192 P 50 30 100 330 22.0 47.0 200 70 1.5 1.2 SOT-23 BCR 196 P 50 50 70 200 47.0 22.0 150 50 1.5 2.6 SOT-23 BCR 196W P 50 50 70 200 47.0 22.0 150 50 1.5 2.6 SOT-323 BCR 198 P 50 50 70 200 47.0 47.0 190 70 1.0 1.5 SOT-23 BCR 198W P 50 50 70 250 47.0 47.0 190 70 1.0 1.5 SOT-323 BCR 503 N 50 12 500 330 2.2 2.2 100 40 1.0 1.5 SOT-23 Semiconductor Group 17 1998-11-01 Selection Guide Digital Transistors (cont'd) Type N = NPN P = PNP Maximum Ratings VCE0 Vi (on) IC V Ptot Characteristics (TA = 25 C) Resistance Value R1 hFE (min.) Vi (on) min Package R2 fT 100 mA/ 5V V mA mW k k MHz IC = 5 mA 2 mA/ 10 mA/5 V VCE = 5 V 0.3 V Vi (off) max BCR 505 N 50 12 500 330 2.2 10.0 100 70 0.5 1.0 SOT-23 BCR 512 N 50 30 500 330 4.7 4.7 100 60 1.0 1.5 SOT-23 BCR 519 N 50 30 500 330 4.7 - 100 120 0.5 0.8 SOT-23 BCR 521 N 50 10 500 330 1.0 1.0 100 20 1.0 1.5 SOT-23 BCR 523 N 50 12 500 330 1.0 10.0 100 70 0.4 1.0 SOT-23 BCR 533 N 50 40 500 330 10.0 10.0 100 70 1.1 1.5 SOT-23 BCR 553 P 50 12 500 330 2.2 2.2 150 40 1.0 1.5 SOT-23 BCR 555 P 50 12 500 330 2.2 10.0 100 70 0.5 1.0 SOT-23 BCR 562 P 50 30 500 330 4.7 4.7 150 60 1.0 1.5 SOT-23 BCR 569 P 50 30 500 330 4.7 - 150 120 0.5 0.8 SOT-23 BCR 571 P 50 10 500 330 1.0 1.0 150 20 1 1.5 SOT-23 BCR 573 P 50 12 500 330 1.0 10.0 100 70 0.7 1.0 SOT-23 BCR 583 P 50 40 500 330 10.0 10.0 150 70 1.1 1.5 SOT-23 Semiconductor Group 18 1998-11-01 Selection Guide Double Digital Transistors Array Type N = NPN P = PNP Maximum Ratings VCE0 Vi (on) V IC V mA Ptot Characteristics (TA = 25 C) Resistance Value R1 mW k Package R2 fT/MHz k 10 mA /5 V hFE (min.) Vi (on) min Vi (off) max IC = 5 mA 2 mA/ 100 A/ VCE = 5 V 0.3 V 5 V BCR 08 PN N/P 50 10 100 250 2.2 47.0 170 70 0.5 0.8 SOT-363 BCR 10 PN N/P 50 25 100 250 10.0 10.0 130 30 1.0 1.5 SOT-363 BCR 22 PN N/P 50 30 100 250 22.0 22.0 130 50 1.0 1.5 SOT-363 BCR 35 PN N/P 50 20 100 250 10 47.0 150 70 0.5 1.0 SOT-363 BCR 48 PN N/P 50 50/10 100 250 2.2/47 47/47 100 70 1 1.5 SOT-363 BCR 108 S N 50 10 100 250 2.2 47.0 170 70 0.5 0.8 SOT-363 BCR 119 S N 50 15 100 250 4.7 - 150 120 0.5 0.8 SOT-363 BCR 133 S N 50 20 100 250 10.0 10.0 130 30 1.0 1.5 SOT-363 BCR 135 S N 50 20 100 250 10.0 47.0 150 70 0.5 1.0 SOT-363 BCR 141 S N 50 30 100 250 22.0 22.0 130 50 1.0 1.5 SOT-363 BCR 148 S N 50 50 100 250 47.0 47.0 100 70 1.0 1.5 SOT-363 BCR 169 S P 50 15 100 250 4.7 - 200 120 0.5 0.8 SOT-363 BCR 183 S P 50 20 100 250 10.0 10.0 200 30 1.0 1.5 SOT-363 BCR 185 S P 50 20 100 250 10.0 47.0 200 70 0.5 1.0 SOT-363 BCR 191S P 50 30 100 250 22.0 22.0 200 50 1.0 1.5 SOT-363 BCR 198 S P 50 50 100 250 47.0 47.0 190 70 1.0 1.5 SOT-363 Semiconductor Group 19 1998-11-01 Selection Guide Switching Transistors Type N = NPN P = PNP Characteristics (TA = 25 C) Maximum Ratings VCE0 ICM Ptot fT V mW MHz nA mA ICB0 Package VCB0 hFE IC VCE VCEsat IC IB V mA V V mA mA BSS 63 P 100 1000 330 150 100 80 30 10 5 0.25 25 2.50 SOT-23 BSS 64 N 80 1000 330 100 100 80 80 10 1 0.70 4 0.40 SOT-23 BSS 79 N 40 1000 330 250 10 60 40 - 300* 150 10 1.30 500 50 SOT-23 BSS 80 P 40 1000 330 250 10 50 40 - 300* 150 10 1.60 500 50 SOT-23 BSS 81 N 35 1000 330 250 10 60 40 - 300* 150 10 1.30 500 50 SOT-23 BSS 82 P 60 1000 330 250 10 50 40 - 300* 150 10 1.60 500 50 SOT-23 PZT 2222 N 30 600 1500 200 20 50 100 - 300 150 10 0.40 150 15 SOT-223 PZT 2222A N 40 600 1500 200 10 50 100 - 300 150 10 0.30 150 15 SOT-223 PZT 2907 P 40 600 1500 200 20 50 100 - 300 150 10 0.40 150 15 SOT-223 PZT 2907A P 60 600 1500 200 10 50 100 - 300 150 10 0.40 150 15 SOT-223 PZT 3904 N 40 200 1500 300 50 30 100 - 300 10 1 0.30 50 5 SOT-223 PZT 3906 P 40 200 1500 250 50 30 100 - 300 10 1 0.40 50 5 SOT-223 SMBT 2222 N 30 600 330 250 10 50 100 - 300 150 10 0.40 150 15 SOT-23 SMBT 2222A N 40 600 330 300 10 60 100 - 300 150 10 0.30 150 15 SOT-23 SMBT 2907 P 40 600 330 200 20 50 100 - 300 150 10 0.40 150 15 SOT-23 SMBT 2907A P 60 600 330 200 10 50 100 - 300 150 10 0.40 150 15 SOT-23 SMBT 3904 N 40 200 330 300 50 30 100 - 300 10 1 0.30 50 5 SOT-23 SMBT 3906 P 40 200 330 250 50 30 100 - 300 10 1 0.40 50 5 SOT-23 SMBT 4124 N 25 200 330 300 50 20 120 - 360 2 1 0.30 50 5 SOT-23 SMBT 4126 P 25 200 330 250 50 20 120 - 360 2 1 0.40 50 5 SOT-23 SXT 2222A N 40 600 1000 300 10 60 100 - 300 150 10 0.30 150 15 SOT-89 SXT 2907A P 60 600 1000 200 10 60 100 - 300 150 10 0.40 150 15 SOT-89 SXT 3904 N 40 200 1000 300 50 30 100 - 300 10 1 0.30 50 5 SOT-89 SXT 3906 P 40 200 1000 250 50 30 100 - 300 10 1 0.40 50 5 SOT-89 Semiconductor Group 20 1998-11-01 Selection Guide Darlington Transistors Type N = NPN P = PNP Characteristics (TA = 25 C) Maximum Ratings Package VCE0 ICM Ptot fT ICB0 VCB0 hFE IC VCE VCEsat IC IB V mA mW MHz nA V mA V V mA mA BCP 28 P 30 800 1500 200 100 30 20000 100 5 1.0 100 0.1 SOT-223 BCP 29 N 30 800 1500 200 100 30 20000 100 5 1.0 100 0.1 SOT-223 BCP 48 P 60 800 1500 200 100 60 10000 100 5 1.0 100 0.1 SOT-223 BCP 49 N 60 800 1500 200 100 60 10000 100 5 1.0 100 0.1 SOT-223 BCV 26 P 30 800 360 200 100 30 20000 100 5 1.0 100 0.1 SOT-23 BCV 27 N 30 800 360 170 100 30 20000 100 5 1.0 100 0.1 SOT-23 BCV 28 P 30 800 1000 200 100 30 20000 100 5 1.0 100 0.1 SOT-89 BCV 29 N 30 800 1000 150 100 30 20000 100 5 1.0 100 0.1 SOT89 BCV 46 P 60 800 360 200 100 60 10000 100 5 1.0 100 0.1 SOT-23 BCV 47 N 60 800 360 170 100 60 10000 100 5 1.0 100 0.1 SOT23 BCV 48 P 60 800 1000 200 100 60 10000 100 5 1.0 100 0.1 SOT-89 BCV 49 N 60 800 1000 150 100 60 10000 100 5 1.0 100 0.1 SOT-89 BSP 50 N 45 2000 1500 200 100 60 2000 500 10 1.8 1000 1.0 SOT-223 BSP 51 N 60 2000 1500 200 100 80 2000 500 10 1.8 1000 1 0 SOT-223 BSP 52 N 80 2000 1500 200 100 90 2000 500 10 1.8 1000 1.0 SOT-223 BSP 60 P 45 2000 1500 200 100 60 2000 500 10 1.8 1000 1.0 SOT-223 BSP 61 P 60 2000 1500 200 100 80 2000 500 10 1.8 1000 1.0 SOT-223 BSP 62 P 80 2000 1500 200 100 90 2000 500 10 1.8 1000 1.0 SOT223 PZTA 13 N 30 500 1500 125 100 30 10000 100 5 1.5 100 0.1 SOT-223 PZTA 14 N 30 500 1500 125 100 30 20000 100 5 1.5 100 0.1 SOT223 PZTA 63 P 30 800 1500 125 100 30 10000 100 5 1.5 100 0.1 SOT-223 PZTA 64 P 30 800 1500 125 100 30 20000 100 5 1.5 100 0.1 SOT-223 SMBTA 13 N 30 500 330 125 100 30 10000 100 5 1.5 100 0.1 SOT-23 SMBTA 14 N 30 500 330 125 100 30 20000 100 5 1.5 100 0.1 SOT-23 SMBTA 63 P 30 800 330 125 100 30 10000 100 5 1.5 100 0.1 SOT-23 SMBTA 64 P 30 800 330 125 100 30 20000 100 5 1.5 100 0.1 SOT-23 SMBT 6427 N 40 800 360 130 50 20000 100 5 1.5 500 0.5 SOT-23 Semiconductor Group 30 21 1998-11-01 Selection Guide High-Voltage Transistors Type N = NPN P = PNP Characteristics (TA = 25 C) Maximum Ratings VCE0 ICM Ptot fT V mA mW MHz nA VCB0 hFE IC VCE VCEsat IC IB V mA V V mA mA BF 622 N 250 100 1000 100 100 200 50 25 20 0.5 10 1 SOT-89 BF 623 P 250 100 1000 100 100 200 50 25 20 0.5 10 1 SOT-89 BF 720 N 300 100 1500 100 10 200 50 25 20 0.6 30 5 SOT-223 BF 721 P 300 100 1500 100 10 200 50 25 20 0.6 30 5 SOT-223 BF 722 N 250 100 1500 100 10 200 50 25 20 0.6 30 5 SOT-223 BF 723 P 250 100 1500 100 10 200 50 25 20 0.6 30 5 SOT-223 BFN 16 N 250 500 1000 70 100 200 40 30 10 0.4 20 2 SOT-89 BFN 17 P 250 500 1000 100 100 200 40 30 10 0.4 20 2 SOT-89 BFN 18 N 300 500 1000 70 100 250 30 30 10 0.5 20 2 SOT-89 BFN 19 P 300 500 1000 100 100 250 30 30 10 0.5 20 2 SOT-89 BFN 20 N 300 100 1000 100 100 250 40 25 20 0.5 10 1 SOT-89 BFN 21 P 300 100 1000 100 100 250 40 25 20 0.5 10 1 SOT-89 BFN 22 N 250 100 360 100 100 200 50 25 20 0.5 10 1 SOT-23 BFN 23 P 250 100 360 100 100 200 50 25 20 0.5 10 1 SOT-23 BFN 24 N 250 500 360 70 100 200 40 30 10 0.4 20 2 SOT-23 BFN 25 P 250 500 360 100 100 200 40 30 10 0.4 20 2 SOT-23 BFN 26 N 300 500 360 70 100 250 30 30 10 0.5 20 2 SOT-23 BFN 27 P 300 500 360 100 100 250 30 30 10 0.5 20 2 SOT-23 BFN 36 N 250 500 1500 70 100 200 40 30 10 0.4 20 2 SOT-223 BFN 37 P 250 500 1500 100 100 200 40 30 10 0.4 20 2 SOT-223 BFN 38 N 300 500 1500 70 100 250 30 30 10 0.5 20 2 SOT-223 BFN 39 P 300 500 1500 100 100 250 30 30 10 0.5 20 2 SOT-223 PZTA 42 N 300 500 1500 70 100 200 40 30 10 0.5 20 2 SOT-223 PZTA 43 N 200 500 1500 70 100 160 40 30 10 0.4 20 2 SOT-223 PZTA 92 P 300 500 1500 100 250 200 25 30 10 0.5 20 2 SOT-223 PZTA 93 P 200 500 1500 100 250 160 25 30 10 0.4 20 2 SOT-223 SMBTA 42 N 300 500 360 70 100 200 40 30 10 0.5 20 2 SOT-23 N 300 500 1000 70 100 200 40 30 10 0.5 20 2 SCT-595 SMBTA 43 N 200 500 360 70 100 160 40 30 10 0.4 20 2 SOT-23 SMBTA 92 P 300 500 360 100 250 200 25 30 10 0.5 20 2 SOT-23 P 300 500 1000 100 250 200 25 30 10 0.5 20 2 SCT-595 SMBTA 42M SMBTA 92M ICB0 Package New type Semiconductor Group 22 1998-11-01 Selection Guide High-Voltage Transistors (cont'd) Type N = NPN P = PNP Characteristics (TA = 25 C) Maximum Ratings VCE0 ICM Ptot fT V mA mW MHz nA ICB0 SMBTA 93 P 200 500 360 100 250 160 SXTA 42 N 300 500 1000 70 100 SXTA 43 N 200 500 1000 70 SXTA 92 P 300 500 1000 SXTA 93 P 200 500 1000 Package VCB0 hFE IC VCE VCEsat IC IB V mA V V mA mA 25 30 10 0.4 20 2 SOT-23 200 40 30 10 0.5 20 2 SOT-89 100 160 40 30 10 0.4 20 2 SOT-89 100 250 200 25 30 10 0.5 20 2 SOT-89 100 250 160 25 30 10 0.4 20 2 SOT-89 New type Semiconductor Group 23 1998-11-01 Selection Guide RF-Diodes Varactor (Tuning) Diodes Type Characteristics (TA = 25 C) Maximum Ratings VR IF CT V mA pF BB 439 30 20 29 BB 535 30 20 BB 545 30 BB 555 at VR V CT VR pF V 3 5.0 25 18.7 1 2.1 20 20 1 30 20 18.7 BB 565 30 20 BB 639 30 BB 639 C CRatio Package Chip Code (see below) IR VR nA V 5.8 20 28 SOD-323 Q 28 8.9 10 30 SOD-323 A 2.0 28 10.0 10 30 SOD-323 C 1 2.1 28 8.9 10 30 SCD-80 A 20 1 2.0 28 10.0 10 30 SCD-80 C 20 38.3 1 2.65 28 14.5 10 30 SOD-323 K 30 20 39 1 2.55 28 15.3 10 30 SOD-323 B BB 644 30 20 41.8 1 2.55 28 16.4 10 30 SOD-323 - BB 659 30 20 38.3 1 2.65 28 14.5 10 30 SCD-80 K BB 659C 30 20 39 1 2.55 28 15.3 10 30 SCD-80 B BB 640 30 20 69 1 3.05 28 22.6 10 30 SOD-323 N BB 664 30 20 41.8 1 2.55 28 16.4 10 30 SCD-80 - BB 669 30 20 56.5 1 2.7 28 20.9 10 30 SOD-323 - BB 689 30 20 56.5 1 2.7 28 20.9 10 30 SCD-80 - BB 804 (Dual) 20 50 44.75 2 26.15 8 1.71 20 16 SOT-23 E BB 814 (Dual) 20 50 44.75 2 20.8 8 2.15 20 16 SOT-23 O BB 833 30 20 9.3 1 0.75 28 12.4 20 30 SOD-323 F BB 835 30 20 9.1 1 0.62 28 14.7 10 30 SOD-323 G BB 857 30 20 6.6 1 0.54 28 12.2 10 30 SCD-80 - BB 914 (Dual) 20 50 43.75 2 18.7 8 2.34 20 16 SOT-23 P BBY 51 (Dual) 7 20 5.30 1 3.10 4 1.75 10 6 SOT-23 H BBY 51-02W 7 20 5.30 1 3.10 4 1.75 10 6 SCD-80 H BBY 51-03 W 7 20 5.30 1 3.10 4 1.75 10 6 SOD-323 H BBY 51-07 (Dual) 7 20 5.30 1 3.10 4 1.75 10 6 SOT-143 H BBY 52 (Dual) 7 20 1.75 1 1.25 4 1.40 10 6 SOT-23 I BBY 52-02W 7 20 1.75 1 1.25 4 1.40 10 6 SCD-80 I BBY 52-03 W 7 20 1.75 1 1.25 4 1.40 10 6 SOD-323 I BBY 53 (Dual) 6 20 5.30 1 2.40 3 2.20 10 4 SOT-23 L BBY 53-02W 6 20 5.30 1 2.40 3 2.20 10 4 SCD-80 L BBY 53-03 W 6 20 5.30 1 2.40 3 2.20 10 4 SOD-323 L BBY 55-02W 16 20 15 2 6 10 2.5 3 15 SCD-80 H BBY 55-03W 16 20 15 2 6 10 2.5 3 15 SOD-323 H New type Semiconductor Group 24 1998-11-01 Selection Guide Varactor (Tuning) Diodes Type Characteristics (TA = 25 C) Maximum Ratings VR IF CT V mA pF BBY 56-02W 8 20 41 BBY 56-03W 8 20 BBY 57-02W 16 BBY 57-03W at VR V CT VR pF V 1 17.5 3 41 1 17.5 20 17.5 1 16 20 17.5 BBY 58-02W 16 20 BBY 58-03W 16 20 CRatio Package Chip Code (see below) IR VR nA V 2.34 10 8 SCD-80 H 3 2.34 10 8 SOD-323 H 4.73 4 3.7 10 16 SCD-80 H 1 4.73 4 3.7 10 16 SOD-323 H 18.3 1 6.0 4 3.0 10 16 SCD-80 H 18.3 1 6.0 4 3.0 10 16 SOD-323 H New type Varactor (Tuning) Diodes Characteristic Curves The curve numbers refer to the chip codes in the preceding table. Diodes Capacitance CT vs. Reverse Voltage VR Semiconductor Group 25 1998-11-01 Selection Guide PIN Diodes (General Purpose, Switching) Type Characteristics (TA = 25 C) Maximum Ratings Package Chip Code VR IF V mA rf rf CT L IF = 10 A IF = 10 mA VR = 0 V IF = 10 mA f = 100 MHz f = 100 MHz f = 100 MHz IR = 6/3 mA BA 592 35 100 10 0.4 1.20 pF 120 ns SOD-323 P1 BA 595 50 50 1.5 k 4.5 0.23 pF 1.6 s SOD-323 P9 BA 597 50 100 2.3 k 4.5 0.32 pF 2.3 s SOD-323 P5 BA 885 50 50 1,5 4.5 0.23 pF 1,6 s SOT-23 P9 BA 892 35 100 10 0.4 1.20 pF 120 ns SCD-80 P1 BAR 14-1 (Dual) 100 100 2.5 k 8 0.2 pF 1 s SOT-23 P4 BAR 15-1 (Dual) 100 100 2.5 k 8 0.2 pF 1 s SOT-23 P4 BAR 16-1 (Dual) 100 100 2.5 k 8 0.2 pF 1 s SOT-23 P4 BAR 17 100 100 1 k 3.5 0.37 pF 3.3 s SOT-23 P6 BAR 60 (Triple) 100 100 2.5 k 7 0.2 pF 1 s SOT-143 P4 BAR 61 (Triple) 100 100 2.5 k 7 0.2 pF 1 s SOT-143 P4 35 100 70 1 0.3 pF 100 ns SOT-23 P2 BAR 63-04 (Dual) 35 100 70 1 0.3 pF 100 ns SOT-23 P2 BAR 63-05 (Dual) 35 100 70 1 0.3 pF 100 ns SOT-23 P2 BAR 63-06 (Dual) 35 100 70 1 0.3 pF 100 ns SOT-23 P2 BAR 63-02W 35 100 70 1 0.3 pF 100 ns SCD-80 P2 BAR 63-03W 35 100 70 1 0.3 pF 100 ns SOD-323 P2 BAR 63-04W (Dual) 35 100 70 1 0.3 pF 100 ns SOT-323 P2 BAR 63-05W (Dual) 35 100 70 1 0.3 pF 100 ns SOT-323 P2 BAR 63-06W (Dual) 35 100 70 1 0.3 pF 100 ns SOT-323 P2 200 100 600 2 0.3 pF 1.4 s SOT-23 P7 BAR 64-04 (Dual) 200 100 600 2 0.3 pF 1.4 s SOT-23 P7 BAR 64-05 (Dual) 200 100 600 2 0.3 pF 1,4 s SOT-23 P7 BAR 64-06 (Dual) 200 100 600 2 0.3 pF 1.4 s SOT-23 P7 BAR 64-07 (Dual) 200 100 600 2 0.3 pF 1.4 s SOT-143 P7 BAR 64-02W 200 100 600 2 0.3 pF 1.4 s SCD-80 P7 BAR 64-03W 200 100 600 2 0.3 pF 1.4 s SOD-323 P7 BAR 64-04W (Dual) 200 100 600 2 0.3 pF 1.4 s SOT-323 P7 BAR 64-05W (Dual) 200 100 600 2 0.3 pF 1,4 s SOT-323 P7 BAR 64-06W (Dual) 200 100 600 2 0.3 pF 1.4 s SOT-323 P7 BAR 65-02W 30 100 6 0.56 0.6 pF 80 ns SCD-80 P3 BAR 65-03W 30 100 6 0.56 0.6 pF 80 ns SOD-323 P3 BAR 65-07 30 100 6 0.56 0.6 pF 80 ns SOT-143 P3 BAR 63 BAR 64 New type Semiconductor Group 26 1998-11-01 Selection Guide PIN Diodes (General Purpose, Switching) Type Characteristics (TA = 25 C) Maximum Ratings Package Chip Code VR IF V mA rf rf CT L IF = 10 A IF = 10 mA VR = 0 V IF = 10 mA f = 100 MHz f = 100 MHz f = 100 MHz IR = 6/3 mA BAR 80 35 100 10 0.4 1.2 pF 120 ns MW-4 P1 BAR 81 30 100 6 0.56 0.6 pF 80 ns MW-4 P3 BAR 81W 30 100 6 0.56 0.6 pF 80 ns SOT-343 P3 BAT 18 35 100 10 0.4 1.2 pF 120 ns SOT-23 P1 BAT 18-04 (Dual) 35 100 10 0.4 1.2 pF 120 ns SOT-23 P1 BAT 18-05 (Dual) 35 100 10 0.4 1.2 pF 120 ns SOT-23 P1 BAT 18-06 (Dual) 35 100 10 0.4 1.2 pF 120 ns SOT-23 P1 Package Chip Code SOT-23 - New type Electrostatic-Discharge-Protection Diode Type BAR 66 Characteristics (TA = 25 C) Maximum Ratings VR IF V mA rf rf CT L IF = 10 A IF = 10 mA VR = 0 V IF = 10 mA f = 100 MHz f = 100 MHz f = 100 MHz IR = 6/3 mA 200 85 (Dual) 150 Semiconductor Group 0.95 27 0.3 pF 700 ns 1998-11-01 Selection Guide PIN Diodes Characteristic Curves The curve numbers refer to the chip codes in the preceding tables. Forward Resistance rf vs. Forward Current If Semiconductor Group 28 1998-11-01 Selection Guide AF-Schottky Diodes/RF-Schottky Diodes Type Characteristics (TA = 25 C) Maximum Ratings BAS 40 Package Chip Code VR IF CT VF at IF VF at IF V mA pF mV mA mV mA 40 120 3.2 310 1 720 40 SOT-23 S9 BAS 40-04 (Dual) 40 120 3.2 310 1 720 40 SOT-23 S9 BAS 40-04W (Dual) 40 120 3.2 310 1 720 40 SOT-323 S9 BAS 40-05 (Dual) 40 120 3.2 310 1 720 40 SOT-23 S9 BAS 40-05W (Dual) 40 120 3.2 310 1 720 40 SOT-323 S9 BAS 40-06 (Dual) 40 120 3.2 310 1 720 40 SOT-23 S9 BAS 40-06W (Dual) 40 120 3.2 310 1 720 40 SOT-323 S9 BAS 40-07 (Dual) 40 120 3.2 310 1 720 40 SOT-143 S9 BAS 40-07W (Dual) 40 120 3.2 310 1 720 40 SOT-343 S9 70 70 1.5 380 1 690 10 SOT-23 S10 70 70 1.5 380 1 690 10 SOT-23 S10 (Quad) 70 70 1.5 380 1 690 10 SOT-363 S10 BAS 70-04W (Dual) 70 70 1.5 380 1 690 10 SOT-323 S10 BAS 70-05 (Dual) 70 70 1.5 380 1 690 10 SOT-23 S10 BAS 70-05W (Dual) 70 70 1.5 380 1 690 10 SOT-323 S10 BAS 70-06 (Dual) 70 70 1.5 380 1 690 10 SOT-23 S10 (Quad) 70 70 1.5 380 1 690 10 SOT-363 S10 BAS 70-06W (Dual) 70 70 1.5 380 1 690 10 SOT-323 S10 BAS 70-07 (Dual) 70 70 1.5 380 1 690 10 SOT-143 S10 BAS 70-07W (Dual) 70 70 1.5 380 1 690 10 SOT-343 S10 25 100 0.95 385 1 800 35 SOT-23 S11 BAS 70 BAS 70-04 BAS 70-04S BAS 70-06S (Dual) BAS 125 BAS 125-04 (Dual) 25 100 0.95 385 1 800 35 SOT-23 S11 BAS 125-05 (Dual) 25 100 0.95 385 1 800 35 SOT-23 S11 BAS 125-06 (Dual) 25 100 0.95 385 1 800 35 SOT-23 S11 BAS 125-07 (Dual) 25 100 0.95 385 1 800 35 SOT-143 S11 25 100 0.95 385 1 800 35 SOT-323 S11 BAS 125W BAS 125-04W (Dual) 25 100 0.95 385 1 800 35 SOT-323 S11 BAS 125-05W (Dual) 25 100 0.95 385 1 800 35 SOT-323 S11 BAS 125-06W (Dual) 25 100 0.95 385 1 800 35 SOT-323 S11 BAS 125-07W (Dual) 25 100 0.95 385 1 800 35 SOT-343 S11 40 120 3.2 385 1 800 35 SOD-323 S9 BAS 140W New type Semiconductor Group 29 1998-11-01 Selection Guide AF-Schottky Diodes/RF-Schottky Diodes (cont'd) Type Characteristics (TA = 25 C) Maximum Ratings Package Chip Code VR IF CT VF at IF VF at IF V mA pF mV mA mV mA BAS 170W 70 70 1.5 385 1 800 35 SOD-323 S10 BAT 14-03W 4 90 0.22 430 1 550 10 SOD-323 S1 BAT 14-099 (Dual) 4 90 0.22 430 1 550 10 SOT-143 S1 BAT 14-099R (Quad) - 90 0.38 400 1 480 10 SOT-143 S1 4 110 0.21 230 1 320 10 SOD-323 S2 BAT 15-03W BAT 15-099 (Dual) 4 110 0.21 230 1 320 10 SOT-143 S2 BAT 15-099R (Quad) - 110 0.37 230 1 320 10 SOT-143 S2 BAT 17 4 130 0.55 340 1 425 10 SOT-23 S3 BAT 17W 4 130 0.55 340 1 425 10 SOT-323 S3 BAT 17-04 (Dual) 4 130 0.55 340 1 425 10 SOT-23 S3 BAT 17-04W (Dual) 4 130 0.55 340 1 425 10 SOT-323 S3 BAT 17-05W (Dual) 4 130 0.55 340 1 425 10 SOT-323 S3 BAT 17-06 (Dual) 4 130 0.55 340 1 425 10 SOT-23 S3 BAT 17-06W (Dual) 4 130 0.55 340 1 425 10 SOT-323 S3 BAT 17-07 (Dual) 4 130 0.55 340 1 425 10 SOT-143 S3 BAT 60A 10 3000 20 120 10 300 1000 SOD-323 - BAT 60B 10 3000 20 240 10 400 1000 SOD-323 - 30 250 4.0 385 10 570 100 SOT-23 S6 BAT 64 BAT 64-04 (Dual) 30 250 4.0 385 10 570 100 SOT-23 S6 BAT 64-04W (Dual) 30 250 4.0 385 10 570 100 SOT-323 S6 BAT 64-05 (Dual) 30 250 4.0 385 10 570 100 SOT-23 S6 BAT 64-05W (Dual) 30 250 4.0 385 10 570 100 SOT-323 S6 BAT 64-06 (Dual) 30 250 4.0 385 10 570 100 SOT-23 S6 BAT 64-06W (Dual) 30 250 4.0 385 10 570 100 SOT-323 S6 BAT 64-07 (Dual) 30 250 4.0 385 10 570 100 SOT-143 S6 BAT 64-07W (Dual) 30 250 4.0 385 10 570 100 SOT-343 S6 BAT 66-05 (Dual) 40 2000 33.0 280 10 470 1000 SOT-223 - 8 130 0.75 320 1 395 10 SOT-23 S7 BAT 68 New type Semiconductor Group 30 1998-11-01 Selection Guide AF-Schottky Diodes/RF-Schottky Diodes (cont'd) Type Characteristics (TA = 25 C) Maximum Ratings Package Chip Code VR IF CT VF at IF VF at IF V mA pF mV mA mV mA BAT 68W 8 130 0.75 320 1 395 10 SOT-323 S7 BAT 68-03W 8 130 0.75 320 1 395 10 SOD-323 S7 BAT 68-04 (Dual) 8 130 0.75 320 1 395 10 SOT-23 S7 BAT 68-04W (Dual) 8 130 0.75 320 1 395 10 SOT-323 S7 BAT 68-05 (Dual) 8 130 0.75 320 1 395 10 SOT-23 S7 BAT 68-05W (Dual) 8 130 0.75 320 1 395 10 SOT-323 S7 BAT 68-06 (Dual) 8 130 0.75 320 1 395 10 SOT-23 S7 BAT 68-06W (Dual) 8 130 0.75 320 1 395 10 SOT-323 S7 BAT 68-07 (Dual) 8 130 0.75 320 1 395 10 SOT-143 S7 BAT 68-07W (Dual) 8 130 0.75 320 1 395 10 SOT-343 S7 BAT 70-05 (Dual) 70 1500 48.8 260 10 520 1500 SOT-223 - BAT 114-099 (Dual) 4 90 0.22 580 1 680 10 SOT-143 S8 BAT 114-099R (Quad) - 90 0.22 580 1 680 10 SOT-143 S8 40 750 8.0 320 10 460 250 SOD-323 - 240 400 11.5 325 10 470 50 SOT-23 - BAT 165 BAT 240A (Dual) New type Semiconductor Group 31 1998-11-01 Selection Guide Schottky Detector Diodes Type Characteristics (TA = 25 C) Maximum Ratings VR IF CT V mA pF 40 20 0.4 0 0.53 2 160 BAT 62-02W 40 20 0.4 0 580 2 BAT 62-03W 40 20 0.4 0 0.53 BAT 62-07W 40 20 0.4 0 3 100 0.65 0.2 BAT 62 BAT 63 at VR V VF at IF RO at VF mA k V Package Chip Code IR at VR nA V 0 10 40 SOT-143 S4 225 0 10 40 SCD-80 S4 2 160 0 10 40 SOD-323 S4 580 2 225 0 10 40 SOT-343 S4 0.19 1 30 0 10 3 SOT-143 S5 V New type Schottky-Diodes Characteristic Curves The curve numbers refer to the chip codes in the preceding tables. Forward Current If vs. Forward Voltage Vf Semiconductor Group 32 1998-11-01 Selection Guide AF-Diodes General Purpose, Switching and Rectifier Diodes Type Characteristics (TA = 25 C) Maximum Ratings VR IF VBR V mA V IR A at VR V BAL 74 50 250 50 0.10 BAL 99 70 250 70 BAR 74 50 250 BAR 99 70 BAS 16 VF Package IF trr V mA ns 50 1.00 100 4.0 SOT-23 2.50 70 1.25 150 6.0 SOT-23 50 0.10 50 1.00 100 4.0 SOT-23 250 70 2.50 70 1.25 150 6.0 SOT-23 75 250 75 1.00 75 1.25 150 6.0 SOT-23 BAS 16-02W 75 250 75 1.00 75 1.25 150 6.0 SCD-80 BAS 16-03W 75 250 75 1.00 75 1.25 150 6.0 SOD-323 BAS 16W 75 250 75 1.00 75 1.25 150 6.0 SOT-323 BAS 19 100 250 120 0.10 120 1.25 200 50.0 SOT-23 BAS 20 150 250 200 0.10 200 1.25 200 50.0 SOT-23 BAS 21 200 250 250 0.10 250 1.25 200 50.0 SOT-23 at BAS 28 (Dual) 75 200 85 1.00 75 1.25 150 6.0 SOT-143 BAS 28W (Dual) 75 200 85 1.00 75 1.25 150 6.0 SOT-343 BAS 78A 50 1000 50 1.00 50 2.00 2000 1.0 s SOT-223 BAS 78B 100 1000 100 1.00 100 2.00 2000 1.0 s SOT-223 BAS 78C 200 1000 200 1.00 200 2.00 2000 1.0 s SOT-223 BAS 78D 400 1000 400 1.00 400 2.00 2000 1.0 s SOT-223 BAS 79A (Dual) 50 1000 50 1.00 50 2.00 2000 1.0 s SOT-223 BAS 79B (Dual) 100 1000 100 1.00 100 2.00 2000 1.0 s SOT-223 BAS 79C (Dual) 200 1000 200 1.00 200 2.00 2000 1.0 s SOT-223 BAS 79D (Dual) 400 1000 400 1.00 400 2.00 2000 1.0 s SOT-223 BAV 70 (Dual) 70 200 70 2.50 70 1.25 150 6.0 SOT-23 BAV 70W (Dual) 70 200 70 2.50 70 1.25 150 6.0 SOT-323 BAV 74 (Dual) 50 200 50 0.10 50 1.00 100 4.0 SOT-23 BAV 99 (Dual) 70 200 70 2.50 70 1.25 150 6.0 SOT-23 BAV 99W (Dual) 70 200 70 2.50 70 1.25 150 6.0 SOT-323 BAW 56 (Dual) 70 200 70 2.50 70 1.25 150 6.0 SOT-23 BAW 56W (Dual) 70 200 70 2.50 70 1.25 150 6.0 SOT-323 BAW 78A 50 1000 50 1.00 50 2.00 2000 1.0 s SOT-89 BAW 78B 100 1000 100 1.00 100 2.00 2000 1.0 s SOT-89 BAW 78C 200 1000 200 1.00 200 2.00 2000 1.0 s SOT-89 BAW 78D 400 1000 400 1.00 400 2.00 2000 1.0 s SOT-89 New type Semiconductor Group 33 1998-11-01 Selection Guide AF-Diodes General Purpose, Switching and Rectifier Diodes (cont'd) Type Characteristics (TA = 25 C) Maximum Ratings BAW 78M VR IF VBR V mA V IR A at VR V 400 1000 400 1.00 VF Package IF trr V mA ns 400 2.00 2000 1.0 s SCT-595 at BAW 79A (Dual) 50 1000 50 1.00 50 2.00 2000 1.0 s SOT-89 BAW 79B (Dual) 100 1000 100 1.00 100 2.00 2000 1.0 s SOT-89 BAW 79C (Dual) 200 1000 200 1.00 200 2.00 2000 1.0 s SOT-89 BAW 79D (Dual) 400 1000 400 1.00 400 2.00 2000 1.0 s SOT-89 BAW 100 (Dual) 75 200 70 2.50 70 1.25 150 6.0 SOT-143 BAW 101 (Dual) 300 250 300 0.15 250 1.30 100 1.0 s SOT-143 70 200 100 5.00 75 1.00 100 4.0 SOT-23 SMBD 914 SMBD 2835 (Dual) 30 200 75 0.10 30 1.20 100 6.0 SOT-23 SMBD 2836 (Dual) 50 200 75 0.10 50 1.20 100 6.0 SOT-23 SMBD 2837 (Dual) 30 200 75 0.10 30 1.20 100 6.0 SOT-23 SMBD 2838 (Dual) 50 200 75 0.10 50 1.20 100 6.0 SOT-23 70 250 70 0.10 50 1.10 100 10.0 SOT-23 SMBD 6050 SMBD 6100 (Dual) 70 200 70 0.10 50 1.10 100 15.0 SOT-23 SMBD 7000 (Dual) 100 200 100 0.50 100 1.10 100 15.0 SOT-23 New type Diode Arrays BAS 16S (Triple) 75 250 75 1.00 75 1.25 150 6.0 SOT-363 BAV 70 S (Quad) 70 200 1.5 2.5 70 1.25 150 6.0 SOT-363 BAV 99S (Quad) 70 200 70 2.50 70 1.25 150 6.0 SOT-363 BAW 56S (Quad) 70 200 70 2.50 70 1.25 150 6.0 SOT-363 75 250 75 5 (nA) 75 1.25 150 3.0 s SOT-23 New type Low Leakage Diodes BAS 116 BAW 156 (Dual) 70 200 70 5 (nA) 70 1.25 150 3.0 s SOT-23 BAV 170 (Dual) 70 200 70 5 (nA) 70 1.25 150 3.0 s SOT-23 BAV 199 (Dual) 70 200 70 5 (nA) 70 1.25 150 3.0 s SOT-23 (Bridge) 50 140 50 0.20 50 2.60 100 6.0 SOT-143 Bridge Rectifier BGX 50A Semiconductor Group 34 1998-11-01 Selection Guide For complete information and data sheets please contact us on our internet homepage http://www.siemens.de/semiconductor/products/35/35.htm Leaded Components Varactor Diodes (leaded) Type Characteristics (TA = 25 C) Maximum Ratings VR IF CT VR CT V mA pF V pF BB 112 12 50 440 - 520 1 16.50 - 29.00 8.5 18.00 BB 304 32 50 42 - 47.5 2 25.00 at at VR CRatio nA at VR V 50 10 TO-92a 1.65 - 1.75 20 30 TO-92b V 8.0 Package IR Not for new design Transistors (leaded) Characteristics (TA = 25 C) Maximum Ratings Type N = NPN P = PNP VCE0 IC Ptot fT ICB0 at VCB0 hFE at V mW MHz nA mA V IC Package VCE VCEsat at IC IB mA V V mA mA High-Voltage Transistors BF 420 N 300 50 830 100 10 200 50 25 20 20.0 25 - TO-92d BF 421 P 300 50 830 100 10 200 50 25 20 20.0 25 - TO-92d BF 422 N 250 50 830 100 10 200 50 25 20 20.0 25 - TO-92d BF 423 P 250 50 830 100 10 200 50 25 20 20.0 25 - TO-92d BFP 22 N 200 200 625 70 100 160 50 30 10 0.5 20 2 TO-92c BFP 23 P 200 200 625 70 100 160 50 30 10 0.4 20 2 TO-92c BFP 25 N 300 200 625 70 100 250 40 30 10 0.4 20 2 TO-92c BFP 26 P 300 200 625 70 100 250 40 30 10 0.5 20 2 TO-92c MPSA 42 N 300 500 625 70 100 200 40 30 10 0.5 20 2 TO-92c MPSA 43 N 200 500 625 70 100 160 40 30 10 0.4 20 2 TO-92c MPSA 92 P 300 500 625 70 100 200 25 30 10 0.5 20 2 TO-92c MPSA 93 P 200 500 625 70 100 160 30 30 10 0.4 20 2 TO-92c Not for new design Semiconductor Group 35 1998-11-01 Selection Guide Transistors (leaded) (cont'd) Characteristics (TA = 25 C) Maximum Ratings Type N = NPN P = PNP VCE0 IC Ptot fT ICB0 at VCB0 hFE at IC V mW MHz nA mA V mA V Package VCE VCEsat at IC IB V mA mA Darlington Transistors BC 516 P 30 500 625 200 100 30 30000 20 2 1.0 100 0.1 TO-92d BC 517 N 30 500 625 150 100 30 30000 20 2 1.0 100 0.1 TO-92d BC 617 N 40 500 625 150 100 40 20000 200 5 1.1 200 0.2 TO-92d BC 618 N 55 500 625 150 100 60 10000 200 5 1.1 200 0.2 TO-92d BC 875 N 45 1000 800 150 100 60 2000 500 10 1.3 500 0.5 TO-92d BC 876 P 45 1000 800 150 100 60 2000 500 10 1.3 500 0.5 TO-92d BC 877 N 60 1000 800 150 100 80 2000 500 10 1.3 500 0.5 TO-92d BC 878 P 60 1000 800 150 100 80 2000 500 10 1.3 500 0.5 TO-92d BC 879 N 80 1000 800 150 100 90 2000 500 10 1.3 500 0.5 TO-92d BC 880 P 80 1000 800 150 100 90 2000 500 10 1.3 500 0.5 TO-92d Not for new design RF-Transistors Type N = NPN P = PNP Characteristics (TA = 25 C) Maximum Ratings GPC Package VCE0 IC Ptot fT F IC VCE f IC VCE f V mA mW GHz dB mA V MHz dB mA V MHz BF 414 P 30 25 300 0.56 3.0 5 10 100 - - - - TO-92d BF 506 P 35 30 300 0.55 3.0 2 10 200 - - - - TO-92d BF 959 N 20 100 500 1.10 4.0 20 10 200 - - - - TO-92d Not for new design Semiconductor Group 36 1998-11-01 Selection Guide For complete information and data sheets please contact us on our internet homepage http://www.siemens.de/semiconductor/products/35/35.htm General Purpose and Switching Transistors Characteristics (TA = 25 C) Maximum Ratings Type N = NPN P = PNP VCB0 IC Ptot V mA mW MHz nA fT ICB0 at VCB0 hFE at V IC Package VCE VCEsat at IC mA V V mA IB mA BC 327 P 50 800 625 200 100 45 100 ... 630* 100 1 0.70 500 50.0 TO-92d BC 328 P 30 800 625 200 100 25 100 ... 630* 100 1 0.70 500 50.0 TO-92d BC 337 N 50 800 625 170 100 45 100 ... 630* 100 1 0.70 500 50.0 TO-92d BC 338 N 30 800 625 170 100 25 100 ... 630* 100 1 0.70 500 50.0 TO-92d BC 368 N 25 1000 800 100 100 25 85 ... 375 500 1 0.50 1000 100.0 TO-92d BC 369 P 25 1000 800 100 100 25 85 ... 375 500 1 0.50 1000 100.0 TO-92d BC 635 N 45 1000 800 100 100 30 40 ... 250 150 2 0.50 500 50.0 TO-92d BC 636 P 45 1000 800 100 100 30 40 ... 250 150 2 0.50 500 50.0 TO-92d BC 637 N 60 1000 800 100 100 30 40 ... 160 150 2 0.50 500 50.0 TO-92d BC 638 P 60 1000 800 100 100 30 40 ... 160 150 2 0.50 500 50.0 TO-92d BC 639 N 100 1000 800 100 100 30 40 ... 160 150 2 0.50 500 50.0 TO-92d BC 640 P 100 1000 800 100 100 30 40 ... 160 150 2 0.50 500 50.0 TO-92d BCX 12 N 125 800 625 100 100 100 63 100 1 1.00 500 50.0 TO-92d BCX 13 P 125 800 625 120 100 100 63 100 1 1.00 500 50.0 TO-92d BCX 58 N 32 100 500 200 20 32 120 ... 630* 2 5 0.50 100 2.50 TO-92d BCX 59 N 45 100 500 200 20 45 120 ... 630* 2 5 0.50 100 2.50 TO-92d BCX 78 P 32 100 500 250 20 32 120 ... 630* 2 5 0.60 100 2.50 TO-92d BCX 79 P 45 100 500 250 20 45 120 ... 630* 2 5 0.60 100 2.50 TO-92d Not for new design * Available in hFE subgroups. Semiconductor Group 37 1998-11-01