Selection Guide
Semiconductor Group 1 1998-11-01
RF-Transistors and MMICs
MOS Field-Effect Transistors. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Dual-Gate GaAs FETs. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
GaAs FETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
AIGaAs/GaAs HEMTs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
GaAs Power FETs. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3
GaAs Broadband Amplifiers. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Low-Noise Preamplifiers for Mobile Communications (PCN, DECT, GSM) . . . . . . . . . . . . . 4
Integrated Power Amplifiers for Mobile Communications . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Integrated Multi Mode and Dual Band Power Amplifiers for Mobile Communications. . . . . . 5
Variable Gain Amplifiers for Mobile Communications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Mixer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
RF-SPDT Switch . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
RF Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
SIEGET25-RF-BIPOLAR-Transistors. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
SIEGET45-RF-BIPOLAR-Transistors. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
RF-Dual Transistor Arrays. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Si MMICs Broadband Amplifiers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Si MMICs in SIEGET 25-Technology . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Active Bias Controller. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10
Bipolar-Transistor Characteristic Curves. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
AF-Transistors
General Purpose Transistors. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Double Transistor Arrays. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Double Transistors. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
Low-Noise Transistors. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Digital Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Double Digital Transistors Array . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Switching Transistors. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .20
Darlington Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17
High-Voltage Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
RF-Diodes
Varactor (Tuning) Diodes. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
Varactor (Tuning) Diodes Characteristic Curves . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
PIN Diode s (General Purpose, Switch ing) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
Electros tatic-Discharge-Prot ection Diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
AF-Schottky Diodes/RF-Schottky Diodes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
Schottky Detector Diodes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
Schottky-Diodes Characteristic Curves . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
AF-Diodes
General Purpose, Swit ching and Rectifier Diodes. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33
Diode Arrays . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34
AF-Low-Leakage Diodes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 4
Bridge Rect ifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34
Leaded Components . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35
Selection Guide
Semiconductor Group 2 1998-11-01
RF-Transistors and MMICs
MOS Field-Effect Transistors
Type Maximu m Ratings Charac teristics (TA = 25 °C) Package
VDS
VID
mA Ptot
mW Gps
dB F
dB VDS
VID
mA f
MHz gfs
mS
Tetrode
BF 998 12 30 200 20 1.00 8 10 800 24 SOT-143
BF 998W 12 30 200 20 1.00 810 800 24 SOT-343
BF 1005 8 25 200 18 1.40 5 10 800 24 SOT-143
BF 1005S 825 200 19 1.60 512 800 30 SOT-143
BF 1009 12 25 200 20 1.00 9 13 800 24 SOT-143
BF 1009S 12 25 200 22 1.40 912 800 30 SOT-143
BF 1012 16 25 200 20 1.00 12 10 800 24 SOT-143
BF 1012S 16 25 200 22 1.40 12 12 800 30 SOT-143
BF 2000 12 30 200 22 1.1 5 10 800 24 SOT-143
BF 2000W 12 30 200 22 1.1 510 800 24 SOT-343
BF 2030 14 40 200 2.0 5 10 800 31 SOT-143
BF 2030W 14 40 200 2.0 510 800 31 SOT-343
BF 2040 14 40 200 2.0 5 15 800 45 SOT-143
New type
BF 2040W 14 40 200 2.0 515 800 45 SOT-343
Triode
BF 543 20 30 200 22 1.00 10 4200 12 SOT-23
BF 999 20 30 200 25 1.00 10 10 200 16 SOT-23
Dual-Gate GaAs FETs
Type Description Characteristics (TA = 25 °C) Package
IDS
mA VDS
Vf
GHz F
dB Gps
dB
CF 739 Dual-Gat e GaAs FET 10 2.5 - 6 1.8 1.8 17 SOT-143
CF 750 Biased Dual Gate GaAs FET
for frequencies from 400 MHz
to 3 GHz
23.81.81.910SOT-143
Selection Guide
Semiconductor Group 3 1998-11-01
GaAs FETs
Type Description Characteristics (TA = 25 °C) Package
IDS
mA VDS
Vf
GHz gm
mS F
dB Ga
dB
CFY 30 Low Noise, High Gain GaAs
FET 15 3.5 430 1.4 11.5 SOT-143
CFY 35- 20 Low Noise, High Gain GaAs
FET 10 2.5 12 30 1.9 8.5 MW-4
CFY 35- 23 Low Noise, High Gain GaAs
FET 10 2.5 12 30 2.2 8.5 MW-4
AIGaAs/GaAs HEMTs
Type Description Characteristics (TA = 25 °C) Package
IDS
mA VDS
Vf
GHz gm
mS F
dB Ga
dB
CFY 77- 08 Low Noise, High Gain HEMT
for front end amplifiers up to
20 GHz
15 212 65 0.7 10.5 MW-4
CFY 77- 10 Low Noise, High Gain HEMT
for front end amplifiers up to
20 GHz
15 2 12 65 0.9 10 MW-4
GaAs Power FETs
Type Description Characteristics (TA = 25 °C) Package
IDS
mA VDS
Vf
GHz Gp
dB P-1dB
dBm
CLY 2 Power Ampl. for frequencies
up to 3 GHz 180 31.8 14.5 23.5 MW-6
CLY 5 Power Ampl. for frequencies
up to 2.5 GHz 350 3 1.8 9.5 26.5 SOT-223
CLY 10 Power Ampl. for frequencies
up to 2.5 GHz 700 31.8 828.5 SOT-223
CLY 15*
* Pulsed operation
Power Ampl. for frequencies
up to 2.5 GHz 1400 3 1.8 6 31.5 SOT-223
Selection Guide
Semiconductor Group 4 1998-11-01
GaAs Broadband Amplifiers
Type Descrip t ion Characteristics (TA = 25 °C)
VDS = 4.5 V Package
ID
mA f
MHz G
dB G
dB F
dB P– 1 dB
dBm
CGY 50 Sing le stage MMIC ampli fier
100 MHz to 3 GHz 60 200 1000
800 1800 10.0
8.5 0.4
1.1 3.0
3.0 16
16 SOT-143
CGY 52 Two stage MM I C am plif ier 160 200 1800 15.0 3.0 4.8 19 MW-7
CGY 62 Two stage MM I C am plif ier 130 200 1800
2500 19.0
15.0 2.0
3.5
17.5
MW-6
Low Noise Preamplifiers for Mobile Communications
Type Description Characteristics (TA = 25 °C)
VDS = 3 V Package
ID
mA f
MHz Gp
dB F
dB IP3INPUT
dBm P– 1 dB
dBm
CGY 59 Single stage MMIC amplifier
100 MHz to 3 GHz 6950
1850 16.5
12.0 1.3
1.7 – 4
15
4MW-6
CGY 60 Single stage MMIC amplifier
100 MHz to 3 GHz with internal
match t o 50 at 1.7 2 GHz
6 950
1850 15.5
12.5 1.35
1.9 – 3.0
0 5
5MW-6
Integrated Power Amplifiers for Mobile Communications
Type Description Characteristics (TA = 25 °C) Package
ID
AVD
Vf
GHz Gp
dB POut
dBm
CGY 93P Two stage PA for GSM
applications 1.8 3.5 0.9 25.5 35.5 MW-16
CGY 94 Two stage PA for GSM or
AMPS ap plic at ions 1.2 3.6 0.9 23.6 33.6 MW-12
CGY 96 PA for GSM900 application s 1.8 3.5 0.9 35.5 35.5 MW-16
All power amplifiers in pulsed operation mode
CGY 180 PA for DECT and PCS
applications 0.45 3.0 1.89 27 27 MW-12
CGY 181 PA for PCN/PC S appli cat io ns 1.2 3.6 1.75 15.5 31.5 MW-12
CGY 184 F our stage PA for PCN
applications 1.67 3.5 1.8 34 34 MW-16
CGY 195 P A fo r DE CT applications 0.45 3.0 1.89 18 27 SCT-595
New type
CGY 196 PA for DECT applicat ions 0.11 3.0 1.89 32 26 SCT-598
Selection Guide
Semiconductor Group 5 1998-11-01
Integrated Multi Mode and Dual Band Power Amplifiers for Mobile Communications
Type Description Mode/Band Characteristics (TA = 25 °C) Package
Iop
AVD
Vf
MHz Gp
dB POut
dBm PAE
%
CGY 81 Tri mode PA f or
AMPS / C D M A /
TDMA
AMPS 3.5 824 - 849 24 31.5 55 MW-16
CDMA 3.5 824 - 849 28 28 35
TDMA 3.5 824 - 849 27 30 40
CGY 191 Dual mode PA for
CDMA /TDMA C D MA [PCS] 3.5 1850 - 1910 24 29 40 MW-16
TDMA [PCS] 3.5 1850 - 191 0 24 29 40
CGY 0819 Dual Band Tri Mode
PA for AMPS/
CDMA /TDMA
AMPS 3.5 824 - 849 2 4 31.5 55 MW -16
CDMA 3.5 824 - 849 28 28 35
TDMA 3.5824 - 849 273040
CDMA [PCS] 3.5 185 0 - 1910 24 29 40
TDMA [PCS] 3.5 1850 - 191 0 24 29 40
CGY 0918 Dual Band PA for
GSM /PCN GSM 1.6 3.5 880 - 915 25 35 55 MW-16
PCN 1.4 3.5 1710 - 1785 24 34 45
New type
CGY 98 Broad band PA;
Matchable for GSM /
PCN
GSM 1.6 3.5 880 - 915 23 35 55 SCT-595
PCN 1.6 3.5 1710 - 1785 19 34 45
Variable Gain Amplifiers for Mobile Communications
Type Description Characteristics (TA = 25 °C) Package
ID
mA VDS
Vf
GHz G
dB G
dB P– 1dB
dBm
CGY 120 Va riable gain amplifier for
GSM/PC N applications 45
45 3
30.9
1.8 22
20 55
55 14
14 MW-6
CGY 121A Variable gain amplifier for
GSM/PC N/ C D M A applications 45
45 3
30.9
1.8 19
17.5 53
53 14
14 MW-6
New type
CGY 121B Variable gain amplifier for
GSM/PC N/ C D M A applications 70
70 3
30.9
1.8 21.5
19.5 55
55 16
16 MW-6
Selection Guide
Semiconductor Group 6 1998-11-01
Mixer
Type Description Characteristics (TA = 25 °C) Package
Iop
mA VD
VFrequency Range
MHz GC
dB IP3
INPUT
dBm FSSB
dB PLO
dBm
CF 750 General pu rpose dua l gate
GaAs FET mixer 2.5 3.8 fRF, LO, IF 2000 15 – 5 4.5 – 3 SOT-143
CMY 91 M ixer with integrated IF
amplifilter 2.5 3 fIF200
fRF2500 9.5 0 8 – 3 MW-6
CMY 200 Ult ralinear downco nv ert er
1200 MHz to 40 MHz 50 5fIF = 30 100
fLO = 1000 1400 821.5 8– 5 MW-6
CMY 210 Ultralinear broadband mixer
with integrated LO-buffer 73fLO = 500 ... 25 00
fRF, fIF2500 – 6.0 23 6.0 0 MW-6
CMY 211 Linear mixer with integrated
LO-buffer 2.5 3fLO = 500 … 2500
fRF, fIF < 3500 – 6.5 17.5 6.5 0MW-6
New type
RF-SPDT Switch
Type Description Cha racteristics (TA = 25 °C) Package
New type
f
GHz Ins ertion Lo s s
dB Isolation dB P– 1dB
dBm
CSY 240 RF-SPDT switch for mobile
communication applications 0.9
1.8 0.3
0.5 28
22 30 MW-6
RF Transistors
Type
N = NPN
P = PNP
Maximum
Ratings Characteristics (TA = 25 °C) Package Chip
Code
VCE0
VIC
mA Ptot
mW fT
GHz F
dB IC
mA VCE
Vf
MHz
Gma
Gms
dB IC
mA VCE
Vf
MHz
BF 517 N15 25 280 2.50 3.5 2 5 800 11.0 14 5800 SOT-23 17
BF 569 P 35 30 280 0.95 4.5 3 10 800 12.5 3 10 800 SOT-23 23
BF 660 P30 25 280 0.70 ––––9.2 310 800 SOT-23 24
BF 660W P 30 25 280 0.70 9.2 3 10 800 SOT-323 24
BF 770A N12 50 300 6.00 258900 13.5 30 8900 SOT-23 15
BF 771 N 12 80 580 8.00 1.3 10 8 900 14.5 30 8 900 SOT-23 6
BF 771W N12 80 580 8.00 1.3 10 8900 15.5 30 8900 SOT-323 6
BF 772 N 12 80 580 8.00 1.3 10 8 900 17.5 30 8 900 SOT-143 6
BF 775 N15 30 280 5.00 1.8 2 6 900 15.0 15 8900 SOT-23 13
Not for new design
Selection Guide
Semiconductor Group 7 1998-11-01
BF 775A N16 30 280 5.80 1.45 5 8 900 16.0 15 8900 SOT-23 14
BF 775W N 15 30 280 5.00 1.8 2 6 900 15.5 15 8 900 SOT-323 13
BF 799 N20 35 280 1.10 3.0 510 100 11.2 510 800 SOT-23 18
BF 799W N 20 35 280 1.10 3.0 5 10 100 11.2 5 10 800 SOT-323 18
BF 840 N40 25 280 0.38 1.7 110 0.1 ––––SOT-23 19
BF 841 N 40252800.381.71100.1––––SOT-2319
BFG 19S N15 100 1000 5.50 2.5 20 8900 13.5 70 8900 SOT-223 16
BFG 135A N 15 150 1000 6.00 2.0 30 8 900 14.0 100 8 900 SOT-223 8
BFG 193 N12 80 600 8.00 1.3 10 8900 15.5 30 8900 SOT-223 6
BFG 194 P 15 100 1000 5.00 2.8 20 8 900 11.0 70 8 900 SOT-223 22
BFG 196 N12 100 800 7.50 1.5 20 8900 14.0 50 8900 SOT-223 7
BFG 235 N 15 300 2000 5.50 2.7 60 8 900 12.0 200 8 900 SOT-223 9
BFP 81 N16 30 280 5.80 1.45 5 8 900 21.0 15 8900 SOT-143 14
BFP 93A N 12 50 300 6.00 2.0 5 8 900 18.0 30 8 900 SOT-143 15
BFP 136 W N12 150 1000 5.50 3.3 30 51800 9.5 80 51800 SOT-343 8
BFP 180 N 8 4 30 7.002.251 5 180012.01 5 1800SOT-143 1
BFP 180 W N8430 7.00 2.25 1 5 1800 11.5 1 5 1800 SOT-343 1
BFP 181 N 12 20 175 8.00 1.8 2 8 1800 16.5 5 8 1800 SOT-143 3
BFP 181 R N12 20 175 8.00 1.8 2 8 1800 16.5 5 8 1800 SOT-143R 3
BFP 181 W N 12 20 175 8.00 1.8 2 8 1800 16.5 5 8 1800 SOT-343 3
BFP 182 N12 35 250 8.00 1.9 3 8 1800 15.0 10 81800 SOT-143 4
BFP 182 R N 12 35 250 8.00 1.9 3 8 1800 15.0 10 8 1800 SOT-143R 4
BFP 182 W N12 35 250 8.00 1.9 3 8 1800 15.5 10 81800 SOT-343 4
BFP 183 N 12 65 250 8.00 2.0 5 8 1800 14.0 15 8 1800 SOT-143 5
BFP 183 R N12 65 250 8.00 2.0 5 8 1800 14.0 15 81800 SOT-143R 5
BFP 183 W N 12 65 450 8.00 2.0 5 8 1800 14.5 15 8 1800 SOT-343 5
BFP 193 N12 80 580 8.00 2.1 10 81800 11.5 30 81800 SOT-143 6
BFP 193 W N 12 80 580 8.00 2.1 10 8 1800 13.0 30 8 1800 SOT-343 6
BFP 194 P15 100 700 5.00 2.8 20 8900 12.0 70 8900 SOT-143 22
BFP 196 N 12 100 700 7.50 2.5 20 8 1800 10.0 50 8 1800 SOT-143 7
BFP 196 W N12 100 700 7.50 2.5 20 81800 11.5 50 81800 SOT-343 7
BFP 280 N 8 10 80 7.50 2.0 1.5 5 1800 15.0 3 5 1800 SOT-143 2
BFP 280 W N810 80 7.50 2.0 1.5 51800 15.0 3 5 1800 SOT-343 2
Not for new design
RF Transistors (cont’d)
Type
N = NPN
P = PNP
Maximum
Ratings Characteristics (TA = 25 °C) Package Chip
Code
VCE0
VIC
mA Ptot
mW fT
GHz F
dB IC
mA VCE
Vf
MHz
Gma
Gms
dB IC
mA VCE
Vf
MHz
Selection Guide
Semiconductor Group 8 1998-11-01
BFQ 19S N15 75 1000 5.50 2.5 20 8900 11.5 70 8900 SOT-89 16
BFQ 81 N 16 30 280 5.80 1.45 5 8 900 16.0 15 8 900 SOT-23 14
BFQ 193 N12 80 600 7.50 1.3 10 8900 14.0 30 8900 SOT-89 6
BFR 35AP N 15 30 280 5.00 1.8 2 6 900 15.0 15 8 900 SOT-23 13
BFR 92P N15 30 280 5.00 1.8 2 6 900 15.0 15 8900 SOT-23 13
BFR 92W N 15 30 280 5.00 1.8 2 6 900 15.5 15 8 900 SOT-323 13
BFR 93A N12 50 300 6.00 2.0 5 8 900 13.5 30 8900 SOT-23 15
BFR 93AW N 12 50 300 6.00 2.0 5 8 900 15.0 30 8 900 SOT-323 15
BFR 106 N15 100 700 5.00 2.5 20 8900 12.5 70 8900 SOT-23 16
BFR 180 N 8 4 30 7.00 2.1 1 5 900 13.5 1 5 900 SOT-23 1
BFR 180W N8430 7.00 2.1 1 5 900 13.5 1 5 900 SOT-323 1
BFR 181 N 12 20 175 8.00 1.45 2 8 900 18.0 5 8 900 SOT-23 3
BFR 181W N12 20 175 8.00 1.45 2 8 900 18.5 5 8 900 SOT-323 3
BFR 182 N 12 35 250 8.00 1.2 3 8 900 17.5 10 8 900 SOT-23 4
BFR 182W N12 35 250 8.00 1.2 3 8 900 19.0 10 8900 SOT-323 4
BFR 183 N 12 65 450 8.00 1.2 5 8 900 16.5 15 8 900 SOT-23 5
BFR 183W N12 65 450 8.00 1.2 5 8 900 18.0 15 8900 SOT-323 5
BFR 193 N 12 80 580 8.00 1.3 10 8 900 14.5 30 8 900 SOT-23 6
BFR 193W N12 80 580 8.00 1.3 10 8900 15.5 30 8900 SOT-323 6
BFR 194 P 15 100 700 5.00 2.8 20 8 900 10.0 70 8 900 SOT-23 22
BFR 280 N810 80 7.50 1.5 1.5 5900 17.0 3 5 900 SOT-23 2
BFR 280W N 8 10 80 7.50 1.5 1.5 5 900 17.0 3 5 900 SOT-323 2
BFS 17P N15 25 280 2.50 3.5 2 5 800 11.0 14 5800 SOT-23 17
BFS 17W N 15 25 280 2.50 3.5 2 5 800 11.0 14 5 800 SOT-323 17
BFT 92 P15 25 200 5.00 2.0 2 8 900 13.5 15 8900 SOT-23 20
BFT 92W P 15 25 200 5.00 2.0 2 8 900 14.0 15 8 900 SOT-323 20
BFT 93 P12 35 300 5.50 2.7 2 8 900 11.5 30 8900 SOT-23 21
Not for new design
RF Transistors (cont’d)
Type
N = NPN
P = PNP
Maximum
Ratings Characteristics (TA = 25 °C) Package Chip
Code
VCE0
VIC
mA Ptot
mW fT
GHz F
dB IC
mA VCE
Vf
MHz
Gma
Gms
dB IC
mA VCE
Vf
MHz
Selection Guide
Semiconductor Group 9 1998-11-01
SIEGET®25-RF-BIPOLAR-Transistors
Type
N = NPN
P = PNP
Maximu m
Ratings Characteristics (TA = 25 °C) Package Chip
Code
VCE0
VIC
mA Ptot
mW fT
GHz Fmin
dB IC
mA VCE
Vf
MHz
Gma
Gms
dB IC
mA VCE
Vf
MHz
BFP 405 N 4.5 12 55 25 1.15 22 1800 22 5 21800 SOT-343 10
BFP 420 N 4.5 35 160 25 1.05 5 2 1800 20 20 2 1800 SOT-343 11
BFP 450 N 4.5 100 450 24 1.25 10 2 1800 14 50 21800 SOT-343 12
New type
BFP 490 N 4.5 600 1000 17.5 –––18009.520021800SCT-595
SIEGET®45-RF-BIPOLAR-Transistors
Type
N = NPN
P = PNP
Maximu m
Ratings Characteristics (TA = 25 °C) Package Chip
Code
VCE0
VIC
mA Ptot
mW fT
GHz Fmin
dB IC
mA VCE
Vf
MHz
Gma
Gms
dB IC
mA VCE
Vf
MHz
New type
BFP 520 N 2.5 40 100 45 0.95 22 1800 23 20 21800 SOT-343
RF-Dual Transistor Arrays
Type
N = NPN
P = PNP
Maximu m
Ratings Characteristics (TA = 25 °C) Package Chip
Code
VCE0
VIC
mA Ptot
mW fT
GHz Fmin
dB IC
mA VCE
Vf
MHz
Gma
Gms
dB IC
mA VCE
Vf
MHz
BFS 480 N 810 80 7.50 1.5 1.5 5900 18 35900 SOT-363 2
BFS 481 N 12 20 175 8.00 1.45 2 8 900 19 5 8 900 SOT-363 3
BFS 482 N 12 20 250 8.00 1.2 38900 19.5 10 8900 SOT-363 4
BFS 483 N 12 65 450 8.00 1.2 5 8 900 19 15 8 900 SOT-363 5
BFS 17S N 15 25 280 2.50 3.5 25800 11.0 14 5800 SOT-363 17
Selection Guide
Semiconductor Group 10 1998-11-01
Si MMlCs Broadband Amplifiers
Type Maximum
Ratings Characteristics (TA = 25 °C; VD = 4.7 V; ZO = 50 )Package
ID
mA Ptot
mW Gain
dB NF
dB f
MHz Gain
dB NF
dB f
MHz
BGA 310 60 250 10 6.0 100 96.5 1000 SOT-143
BGA 312 60 250 12 5.5 100 11 6.0 1000 SOT-143
BGA 318 60 250 18 3.5 100 16 4.0 1000 SOT-143
Si MMICs in SIEGET®25 Technology
Type
N = NPN
P = PNP
Maximu m
Ratings Characteristics (TA = 25 °C; VD = 3.0 V; ZO = 50 )Package
ID
mA Ptot
mW Gain
dB NF
dB f
MHz Gain
dB NF
dB f
MHz
BGA 420 15 90 19 1.9 100 13 2.2 1800 SOT-343
BGA 425 25 150 27 1.9 100 18.5 2.2 1800 SOT-363
New type
BGA 427 25 150 27 1.9 100 18.5 2.2 1800 SOT-343
Active Bias Controller
Stabilizing bias current for RF tr ans is t ors , NPN t rans is t ors (IC up t o 250 mA) and FETs
Type Maximum
Ratings DC Characteristics with stabilized NPN transistors:
Relative Ch ange of IC / IC
Package
VCC
Vvs hFE vs VSIC / IC vs TA
BCR 400R 15 0.08 × ∆hFE / hFE 0.15 × VS / VS0.2% / K SOT-143
BCR 400W 15 0.08 × ∆hFE / hFE 0. 15 × VS / VS0.2% / K SOT-343
Selection Guide
Semiconductor Group 11 1998-11-01
Bipolar-Transistor Characteristic Curves
The curve numbers refer to the chip codes in the preceding tables.
Transition frequency fT vs. collector current IC
NPN Types
Selection Guide
Semiconductor Group 12 1998-11-01
NPN Types
PNP Types
Selection Guide
Semiconductor Group 13 1998-11-01
AF-Transistors
General Purpose Transistors
Type
N = NPN
P = PNP
Maximu m
Ratings Characteristics (TA = 25 °C) Package
VCE0
VICM
mA Ptot
mW fT
MHz ICB0
nA VCB0
VhFE IC
mA VCE
VVCEsat
VIC
mA IB
mA
BC 807 P45 1000 330 200 100 25 100 - 630 * 100 1 0.70 500 50 SOT-23
BC 807W P 45 1000 250 200 100 25 100 - 630 * 100 1 0.70 500 50 SOT-323
BC 808 P25 1000 330 200 100 25 100 - 630 * 100 1 0.70 500 50 SOT-23
BC 808W P 25 1000 250 200 100 25 100 - 630 * 100 1 0.70 500 50 SOT-323
BC 817 N45 1000 330 170 100 25 100 - 630 * 100 1 0.70 500 50 SOT-23
BC 817W N 45 1000 250 170 100 25 100 - 630* 100 1 0.70 500 50 SOT-323
BC 818 N25 1000 330 170 100 25 100 - 630 * 100 1 0.70 500 50 SOT-23
BC 818W N 25 1000 250 170 100 25 100 - 630* 100 1 0.70 500 50 SOT-323
BC 846 N65 200 330 250 15 30 110 - 450* 2 5 0.60 100 5SOT-23
BC 846W N 65 200 250 250 15 30 110 - 450 * 2 5 0.60 100 5 SOT-32 3
BC 847 N45 200 330 250 15 30 110 - 800* 2 5 0.60 100 5SOT-23
BC 847W N 45 200 250 250 15 30 110 - 800 * 2 5 0.60 100 5 SOT-32 3
BC 848 N30 200 330 250 15 30 110 - 800* 2 5 0.60 100 5SOT-23
BC 848W N 30 200 250 250 15 30 110 - 800 * 2 5 0.60 100 5 SOT-32 3
BC 856 P65 200 330 250 15 30 125 - 475* 2 5 0.60 100 5SOT-23
BC 856W P 65 200 250 250 15 30 125 - 475* 2 5 0.60 100 5 SOT-323
BC 857 P45 200 330 250 15 30 125 - 800* 2 5 0.60 100 5SOT-23
BC 857W P 45 200 250 250 15 30 125 - 800* 2 5 0.60 100 5 SOT-323
BC 858 P30 200 330 250 15 30 125 - 800* 2 5 0.60 100 5SOT-23
BC 858W P 30 200 250 250 15 30 125 - 800* 2 5 0.60 100 5 SOT-323
BCP 51 P45 1500 1500 125 100 30 40 - 250* 150 2 0.50 500 50 SOT-223
BCP 51M P 45 15 00 1000 125 < 100 30 40 - 250* 150 2 < 0.5 0 500 50 SCT-595
BCP 52 P60 1500 1500 125 100 30 40 - 250* 150 2 0.50 500 50 SOT-223
BCP 52M P 60 1500 1000 125 < 100 30 40 - 250* 150 2 < 0.50 500 50 SCT-595
BCP 53 P80 1500 1500 125 100 30 40 - 250* 150 2 0.50 500 50 SOT-223
BCP 53M P 80 1500 1000 125 < 100 30 40 - 250* 150 2 < 0.50 500 50 SCT-595
BCP 54 N45 1500 1500 100 100 30 40 - 250* 150 2 0.50 500 50 SOT-223
BCP 54M N 45 1700 1000 100 < 100 30 40 - 250* 150 2 < 0.50 500 50 SCT-595
BCP 55 N60 1500 1500 100 100 30 40 - 250* 150 2 0.50 500 50 SOT-223
BCP 55M N 60 1700 1500 100 < 100 30 40 - 250* 150 2 < 0.50 500 50 SCT-595
BCP 56 N80 1500 1500 100 100 30 40 - 250* 150 2 0.50 500 50 SOT-223
BCP 56M N 80 1700 1500 100 < 100 30 40 - 250* 150 2 < 0.50 500 50 SCT-595
New type
Selection Guide
Semiconductor Group 14 1998-11-01
BCP 68 N 20 2000 1500 100 100 25 85 - 400* 500 1 0.50 1000 100 SOT-223
BCP 69 P20 2000 1500 100 100 25 85 - 400* 500 1 0.50 1000 10 0 SOT-223
BCP 70M P 32 3000 1700 100 100 30 85 - 475* 500 1 0.4 2000 200 SCT-595
BCP 71M P3000 1700 SCT-595
BCP 72M P 10 3000 1700 100 100 8 85 - 475* 500 1 0.3 2000 200 SCT-595
BCW 60 N32 200 330 250 20 32 120 - 630* 2 5 0.25 10 0.25 SOT-23
BCW 61 P 32 200 330 250 20 32 120 - 630* 2 5 0. 25 10 0.25 S OT-23
BCW 65 N32 1000 330 170 20 32 100 - 630* 100 1 0.70 500 50 SOT-23
BCW 66 N 45 1000 330 170 20 45 100 - 630* 1 00 1 0.70 500 50 S OT -23
BCW 67 P32 1000 330 200 20 32 100 - 630* 100 1 0.70 500 50 SOT-23
BCW 68 P 45 1000 330 200 20 45 100 - 630* 100 1 0.70 500 50 SOT-23
BCX 41 N125 1000 330 100 100 100 63 100 1 0.90 300 30 SOT-23
BCX 42 P 125 1000 330 150 100 100 63 100 1 0.90 300 30 SOT-23
BCX 51 P45 1500 1000 125 100 30 40 - 250* 150 2 0.50 500 50 SOT-89
BCX 52 P 60 1500 1000 125 100 30 40 - 250* 150 2 0.50 500 50 SOT-89
BCX 53 P80 1500 1000 125 100 30 40 - 250* 150 2 0.50 500 50 SOT-89
BCX 54 N 45 1500 1000 100 100 30 40 - 250* 150 2 0.50 500 50 SOT-89
BCX 55 N60 1500 1000 100 100 30 40 - 250* 150 2 0.50 500 50 SOT-89
BCX 56 N 80 1500 1000 100 100 30 40 - 250* 150 2 0.50 500 50 SOT-89
BCX 68 N20 2000 1000 100 100 25 85 - 400* 500 1 0.50 1000 10 0 SOT-89
BCX 69 P 20 2000 1000 100 100 25 85 - 400* 500 1 0.50 1000 10 0 SOT-89
BCX 70 N45 200 330 250 20 45 120 - 630* 2 5 0.25 10 0.25 SOT-23
BCX 71 P 45 200 330 250 20 45 120 - 630* 2 5 0.25 10 0.25 S OT - 23
BDP 947 N45 5000 1500 100 100 45 40 - 475 500 1 0.8 2000 200 SOT-223
BDP 948 P 45 5000 1500 100 100 45 40 - 475 500 1 0.8 2 000 200 S OT -223
BDP 949 N60 5000 1500 100 100 60 40 - 475 500 1 0.8 2000 200 SOT-223
BDP 950 P 60 5000 1500 100 100 60 40 - 475 500 1 0.8 2 000 200 S OT -223
BDP 951 N80 5000 1500 100 100 80 40 - 475 500 1 0.8 2000 200 SOT-223
BDP 952 P 80 5000 1500 100 100 80 40 - 475 500 1 0.8 2 000 200 S OT -223
BDP 953 N100 5000 1500 100 100 100 40 - 475 500 1 0.8 2 000 200 SOT-223
BDP 954 P 10 0 5000 1500 100 100 10 0 40 - 475 500 1 0.8 2 000 200 SOT -223
BDP 955 N120 5000 1500 100 100 120 40 - 475 500 1 0.8 2 000 200 SOT-223
BDP 956 P 12 0 5000 1500 100 100 12 0 40 - 475 500 1 0.8 2 000 200 SOT -223
SMBTA 05 N60 500 330 100 100 60 10 0 100 1 0.25 100 10 SOT-23
New type
General Purpose Transistors (cont’d)
Type
N = NPN
P = PNP
Maximu m
Ratings Characteristics (TA = 25 °C) Package
VCE0
VICM
mA Ptot
mW fT
MHz ICB0
nA VCB0
VhFE IC
mA VCE
VVCEsat
VIC
mA IB
mA
Selection Guide
Semiconductor Group 15 1998-11-01
SMBTA 06 N80 500 330 100 100 80 10 0 100 1 0.25 100 10 SOT-23
SMBTA 06M N 80 500 330 100 100 80 100 100 1 0.25 100 10 SCT-595
SMBTA 20 N40 200 330 125 100 30 40 - 400 510 0.25 10 1SOT-23
SMBTA 55 P 60 500 330 100 100 60 100 100 1 0.25 100 10 SOT-23
SMBTA 56 P80 500 330 100 100 80 10 0 100 1 0.25 100 10 SOT-23
SMBTA 56M P 80 500 330 100 100 80 100 10 0 1 0.25 100 10 SCT-595
SMBTA 70 P40 200 330 125 100 30 40 - 400 510 0.25 10 1SOT-23
* Available in
hFE subgroups
New type
Type
N = NPN
P = PNP
Maximum
Ratings Characterist ic s (TA = 25 °C) Package
VCE0
VICM
mA Ptot
mW fT
MHz ICB0
nA VCB0
VhFE IC
mA VCE
VVCEsat
VIC
mA IB
mA
Double Transistor Arrays
BC 846PN N/P 65 200 330 250 15 30 110 - 450* 2 5 0.60 100 5SOT-363
BC 846S N 65 200 330 250 15 3 0 110 - 45 0* 2 5 0.60 100 5 SOT-363
BC 847PN N/P 45 200 250 250 15 30 290 2 5 0.60 100 5SOT-363
BC 847S N 45 200 250 250 15 30 290 2 5 0.60 100 5 SOT-363
BC 856S P65 200 330 250 15 30 125 - 475* 2 5 0.60 100 5SOT-363
BC 857S P 45 200 250 250 15 30 290 2 5 0.60 100 5 SOT-363
SMBT
3904S N40 200 250 300 50 30 100 - 300 10 1 0.30 50 5SOT-363
SMBT
3904PN N/P 40 200 250 250 50 30 100 - 300 10 1 0. 4 50 5 SOT-36 3
New type
SMBT
3906S P40 200 250 250 50 30 100 - 300 10 1 0.4 50 5SOT-363
General Purpose Transistors (cont’d)
Type
N = NPN
P = PNP
Maximu m
Ratings Characteristics (TA = 25 °C) Package
VCE0
VICM
mA Ptot
mW fT
MHz ICB0
nA VCB0
VhFE IC
mA VCE
VVCEsat
VIC
mA IB
mA
Selection Guide
Semiconductor Group 16 1998-11-01
* Available in hFE subgroups
Type
N = NPN
P = PNP
Maximum
Ratings Characteri sti cs (TA = 25 °C) Package
VCE0
VICM
mA Ptot
mW fT
MHz ICB0
nA VCB0
VhFE IC
mA VCE
VVCEsat
VIC
mA IB
mA
Double Transistors
BCV 61 N30 200 300 250 15 30 110 - 800* 2 5 0.60 100 5SOT-143
BCV 62 P 30 200 300 250 15 30 125 - 800 * 2 5 0.65 100 5 SOT-143
Low-Noise Transistors
BC 849 N30 200 330 250 15 30 200 - 800* 2 5 0.25 10 0.5 SOT-23
BC 849W N 30 200 250 250 15 30 200 - 800* 2 5 0 25 10 0.5 SOT-3 23
BC 850 N45 200 330 250 15 30 200 - 800* 2 5 0.25 10 0.5 SOT-23
BC 850W N 45 200 250 250 15 30 200 - 800* 2 5 0.25 10 0.5 SOT-323
BC 859 P30 200 330 250 15 30 125 - 800* 2 5 0.3 10 0.5 SOT -23
BC 859W P 30 200 250 250 15 30 125 - 800 * 2 5 0.3 10 0.5 SOT-323
BC 860 P45 200 330 250 15 30 220 - 800* 2 5 0.3 10 0.5 SOT -23
BC 860W P 45 200 250 250 15 30 220 - 800 * 2 5 0.3 10 0.5 SOT-323
BCW 60FF,FN
N32 200 330 250 20 32 250 - 630* 2 5 0.25 10 0.25 SOT-2 3
BCW 61FF,FN
P32 200 330 250 20 32 250 - 630 * 2 5 0.25 10 0.25 SOT-2 3
SMBT 5086 P50 50 330 40 50 35 150 10 5 0.30 10 1SOT-23
SMBT 5087 P 50 50 330 40 50 35 250 10 5 0.30 10 1 SOT-23
SMBT 6428 N50 200 330 100 10 30 250 10 5 0.2 10 0.5 SOT-2 3
SMBT 6429 N 45 200 330 100 10 30 500 10 5 0.2 10 0.5 SOT-23
Selection Guide
Semiconductor Group 17 1998-11-01
Digital Transistors
Type
N = NPN
P = PNP
Maximum Ratings Resistance
Value Characteristics (TA = 25 °C) Package
VCE0
V
Vi (on)
V
IC
mA
Ptot
mW
R1
k
R2
k
fT
MHz
10 mA/5 V
hFE (min.)
IC = 5 mA
VCE = 5 V
Vi (on) min
2 mA/
0.3 V
Vi (off) max
100 mA/
5 V
BCR 108 N50 10 100 200 2.2 47.0 170 70 0.5 0.8 SOT-23
BCR 108W N 50 10 100 250 2.2 47.0 170 70 0.5 0.8 SOT-323
BCR 112 N50 15 100 200 4.7 4.7 140 20 1.0 1.5 SOT-23
BCR 116 N 50 15 100 200 4.7 47.0 160 70 0.5 0.8 SOT-23
BCR 116 W N50 15 100 250 4.7 47.0 160 70 0.5 0.8 SOT-323
BCR 119 N 50 15 100 200 4.7 150 120 0.5 0.8 SOT-23
BCR 133 N50 20 100 330 10.0 10.0 130 30 1.0 1.5 SOT-23
BCR 133W N 50 20 100 250 10.0 10.0 130 30 1.0 1.5 SOT-323
BCR 135 N50 20 100 200 10.0 47.0 150 70 0.5 1.0 SOT -23
BCR 135W N 50 20 100 250 10.0 47.0 150 70 0.5 1.0 SOT-323
BCR 141 N50 30 100 200 22.0 22.0 130 50 1.0 1.5 SOT-23
BCR 141W N 50 30 100 250 22.0 22.0 130 50 1.0 1.5 SOT-323
BCR 142 N50 30 100 200 22.0 47.0 150 70 1.5 1.2 SOT-23
BCR 142W N 50 30 100 250 22.0 47.0 150 70 1.5 1.2 SOT-323
BCR 146 N50 50 70 200 47.0 22.0 150 50 1.5 2.6 SOT-23
BCR 146W N 50 50 70 250 47.0 22.0 150 50 1.5 2.6 SOT-323
BCR 148 N50 50 70 200 47.0 47.0 100 70 1.0 1.5 SOT-23
BCR 148W N 50 50 70 250 47.0 47.0 100 70 1.0 1.5 SOT-323
BCR 158 P50 10 100 200 2.2 47.0 200 70 0.5 0.8 SOT-23
BCR 158W P 50 10 100 250 2.2 47.0 200 70 0.5 0.8 SOT-323
BCR 162 P50 15 100 200 4.7 4.7 200 20 1.0 1.5 SOT-23
BCR 166 P 50 15 100 200 4.7 47.0 160 70 0.5 0.8 SOT-23
BCR 166W P50 15 100 250 4.7 47.0 160 70 0.5 0.8 SOT-323
BCR 169 P 50 15 100 200 4.7 200 120 0.5 0.8 SOT-23
BCR 183 P50 20 100 200 10.0 10.0 200 30 1.0 1.5 SOT-23
BCR 185 P 50 20 100 200 10.0 47.0 200 70 0.5 1.0 SOT-23
BCR 185W P50 20 100 250 10.0 47.0 200 70 0.5 1.0 SOT-323
BCR 191 P 50 30 100 200 22.0 22.0 200 50 1.0 1.5 SOT-23
BCR 192 P50 30 100 330 22.0 47.0 200 70 1.5 1.2 SOT-23
BCR 196 P 50 50 70 200 47.0 22.0 150 50 1.5 2.6 SOT-23
BCR 196W P50 50 70 200 47.0 22.0 150 50 1.5 2.6 SOT-323
BCR 198 P 50 50 70 200 47.0 47.0 190 70 1.0 1.5 SOT-23
BCR 198W P50 50 70 250 47.0 47.0 190 70 1.0 1.5 SOT-323
BCR 503 N 50 12 500 330 2.2 2.2 100 40 1.0 1.5 SOT-23
Selection Guide
Semiconductor Group 18 1998-11-01
BCR 505 N50 12 500 330 2.2 10.0 100 70 0.5 1.0 SOT-23
BCR 512 N 50 30 500 330 4.7 4.7 100 60 1.0 1.5 SOT-23
BCR 519 N50 30 500 330 4.7 100 120 0.5 0.8 SOT-23
BCR 521 N 50 10 500 330 1.0 1.0 100 20 1.0 1.5 SOT-23
BCR 523 N50 12 500 330 1.0 10.0 100 70 0.4 1.0 SOT-23
BCR 533 N 50 40 500 330 10.0 10.0 100 70 1.1 1.5 SOT-23
BCR 553 P50 12 500 330 2.2 2.2 150 40 1.0 1.5 SOT-23
BCR 555 P 50 12 500 330 2.2 10.0 100 70 0.5 1.0 SOT-23
BCR 562 P50 30 500 330 4.7 4.7 150 60 1.0 1.5 SOT-23
BCR 569 P 50 30 500 330 4.7 150 120 0.5 0.8 SOT-23
BCR 571 P50 10 500 330 1.0 1.0 150 20 11.5 SOT-23
BCR 573 P 50 12 500 330 1.0 10.0 100 70 0.7 1.0 SOT-23
BCR 583 P50 40 500 330 10.0 10.0 150 70 1.1 1.5 SOT-23
Digital Transistors (cont’d)
Type
N = NPN
P = PNP
Maximum Ratings Resistance
Value Characteristics (TA = 25 °C) Package
VCE0
V
Vi (on)
V
IC
mA
Ptot
mW
R1
k
R2
k
fT
MHz
10 mA/5 V
hFE (min.)
IC = 5 mA
VCE = 5 V
Vi (on) min
2 mA/
0.3 V
Vi (off) max
100 mA/
5 V
Selection Guide
Semiconductor Group 19 1998-11-01
Double Digital Transistors Array
Type
N = NPN
P = PNP
Maximu m Ratings Resis tan ce
Value Characteristics (TA = 25 °C) Package
VCE0
V
Vi (on)
V
IC
mA
Ptot
mW
R1
k
R2
k
fT/MHz
10 mA
/5 V
hFE (min.)
IC = 5 mA
VCE = 5 V
Vi (on) min
2 mA/
0.3 V
Vi (off) max
100 µA/
5 V
BCR 08 PN N/P 50 10 100 250 2.2 47.0 170 70 0.5 0.8 SOT-363
BCR 10 PN N/P 50 25 100 250 10.0 10.0 130 30 1.0 1.5 SOT-363
BCR 22 PN N/P 50 30 100 250 22.0 22.0 130 50 1.0 1.5 SOT-363
BCR 35 PN N/P 50 20 100 250 10 47.0 150 70 0.5 1.0 SOT-363
BCR 48 PN N/P 50 50/10 100 250 2.2/47 47/47 100 70 11.5 SOT-363
BCR 108 S N 50 10 100 250 2.2 47.0 170 70 0.5 0.8 SOT-363
BCR 119 S N50 15 100 250 4.7 150 120 0.5 0.8 SOT-363
BCR 133 S N 50 20 100 250 10.0 10.0 130 30 1.0 1.5 SOT-363
BCR 135 S N50 20 100 250 10.0 47.0 150 70 0.5 1.0 SOT-363
BCR 141 S N 50 30 100 250 22.0 22.0 130 50 1.0 1.5 SOT-363
BCR 148 S N50 50 100 250 47.0 47.0 100 70 1.0 1.5 SOT-363
BCR 169 S P 50 15 100 250 4.7 200 120 0.5 0.8 SOT-363
BCR 183 S P50 20 100 250 10.0 10.0 200 30 1.0 1.5 SOT-363
BCR 185 S P 50 20 100 250 10.0 47.0 200 70 0.5 1.0 SOT-363
BCR 191S P50 30 100 250 22.0 22.0 200 50 1.0 1.5 SOT-363
BCR 198 S P 50 50 100 250 47.0 47.0 190 70 1.0 1.5 SOT-363
Selection Guide
Semiconductor Group 20 1998-11-01
Switching Trans istors
Type
N = NPN
P = PNP
Maximu m
Ratings Characteristics (TA = 25 °C) Package
VCE0
VICM
mA Ptot
mW fT
MHz ICB0
nA VCB0
VhFE IC
mA VCE
VVCEsat
VIC
mA IB
mA
BSS 63 P100 1000 330 150 100 80 30 10 5 0.25 25 2.50 SOT-23
BSS 64 N 80 1000 330 100 100 80 80 10 1 0.70 4 0.40 SOT -23
BSS 79 N40 1000 330 250 10 60 40 - 300* 150 10 1.30 500 50 SOT-23
BSS 80 P 40 1000 330 250 10 50 40 - 300* 150 10 1.60 500 50 SOT -23
BSS 81 N35 1000 330 250 10 60 40 - 300* 150 10 1.30 500 50 SOT-23
BSS 82 P 60 1000 330 250 10 50 40 - 300* 150 10 1.60 500 50 SOT -23
PZT 2222 N30 600 1500 200 20 50 100 - 300 150 10 0.40 150 15 SOT-223
PZT 2222A N 40 600 1500 200 10 50 100 - 300 1 50 10 0.30 150 15 S OT -223
PZT 2907 P40 600 1500 200 20 50 100 - 300 150 10 0.40 150 15 SOT-223
PZT 2907A P 60 600 1500 200 10 50 100 - 300 1 50 10 0.40 150 15 S OT -223
PZT 3904 N40 200 1500 300 50 30 100 - 300 10 1 0.30 50 5SOT-223
PZT 3906 P 40 200 1500 250 50 30 100 - 300 10 1 0.40 50 5 SOT-223
SMBT 2222 N30 600 330 250 10 50 100 - 300 150 10 0.40 150 15 SOT-23
SMBT 2222A N 40 600 330 300 10 60 100 - 300 150 10 0.30 150 15 SOT-23
SMBT 2907 P40 600 330 200 20 50 100 - 300 150 10 0.40 150 15 SOT-23
SMBT 2907A P 60 600 330 200 10 50 100 - 300 150 10 0.40 150 15 SOT -23
SMBT 3904 N40 200 330 300 50 30 100 - 300 10 1 0.30 50 5SOT-23
SMBT 3906 P 40 200 330 250 50 30 100 - 300 10 1 0.40 50 5 SOT-23
SMBT 4124 N25 200 330 300 50 20 120 - 360 2 1 0.30 50 5SOT-23
SMBT 4126 P 25 200 330 250 50 20 120 - 360 2 1 0.40 50 5 SOT-23
SXT 2222A N40 600 1000 300 10 60 100 - 300 150 10 0.30 150 15 SOT-89
SXT 2907A P 60 600 1000 200 10 60 100 - 300 1 50 10 0.40 150 15 S OT -89
SXT 3904 N40 200 1000 300 50 30 100 - 300 10 1 0. 30 50 5SOT-89
SXT 3906 P 40 200 1000 250 50 30 100 - 300 10 1 0.40 50 5 SOT-89
Selection Guide
Semiconductor Group 21 1998-11-01
Darlington Transistors
Type
N = NPN
P = PNP
Maximum
Ratings Char ac ter is ti cs (TA = 25 °C) Package
VCE0
VICM
mA Ptot
mW fT
MHz ICB0
nA VCB0
VhFE IC
mA VCE
VVCEsat
VIC
mA IB
mA
BCP 28 P30 800 1500 200 100 30 20000 100 5 1.0 100 0.1 SOT-223
BCP 29 N 30 800 1500 200 100 30 20000 100 5 1.0 100 0.1 SOT-223
BCP 48 P60 800 1500 200 100 60 10000 100 5 1.0 100 0.1 SOT-223
BCP 49 N 60 800 1500 200 100 60 10000 100 5 1.0 100 0.1 SOT-223
BCV 26 P30 800 360 200 100 30 20000 100 5 1.0 100 0.1 SOT-23
BCV 27 N 30 800 360 170 100 30 2000 0 100 5 1.0 100 0.1 SOT-23
BCV 28 P30 800 1000 200 100 30 20000 100 5 1.0 100 0.1 SOT-89
BCV 29 N 30 800 1000 150 100 30 20000 100 5 1.0 100 0.1 SOT89
BCV 46 P60 800 360 200 100 60 10000 100 5 1.0 100 0.1 SOT-23
BCV 47 N 60 800 360 170 100 60 1000 0 100 5 1.0 100 0.1 SOT23
BCV 48 P60 800 1000 200 100 60 10000 100 5 1.0 100 0.1 SOT-89
BCV 49 N 60 800 1000 150 100 60 10000 100 5 1.0 100 0.1 SOT-89
BSP 50 N45 2000 1500 200 10 0 60 2000 500 10 1.8 1000 1.0 SOT-223
BSP 51 N 60 2000 1500 200 10 0 80 2000 500 10 1.8 1000 1 0 SOT-223
BSP 52 N80 2000 1500 200 10 0 90 2000 500 10 1.8 1000 1.0 SOT-223
BSP 60 P 45 2000 1500 200 100 60 2000 500 10 1.8 1000 1.0 SOT-223
BSP 61 P60 2000 1500 200 10 0 80 2000 500 10 1.8 1000 1.0 SOT-223
BSP 62 P 80 2000 1500 200 100 90 2000 500 10 1.8 1000 1.0 SOT223
PZTA 13 N30 500 1500 125 100 30 10000 100 5 1.5 100 0.1 SOT-223
PZTA 14 N 30 500 1500 125 100 30 20000 1 00 5 1.5 100 0.1 SOT223
PZTA 63 P30 800 1500 125 100 30 10000 100 5 1.5 100 0.1 SOT-223
PZTA 64 P 30 800 1500 125 10 0 30 20000 1 00 5 1.5 100 0.1 SOT-223
SMBTA 13 N30 500 330 125 100 30 10000 100 5 1.5 100 0.1 SOT-23
SMBTA 14 N 30 500 330 12 5 100 30 20000 100 5 1.5 100 0.1 SOT-23
SMBTA 63 P30 800 330 125 100 30 10000 100 5 1.5 100 0.1 SOT-23
SMBTA 64 P 30 800 330 125 100 30 2000 0 100 5 1.5 100 0.1 SOT-23
SMBT 6427 N40 800 360 130 50 30 20000 100 5 1.5 500 0.5 SOT-23
Selection Guide
Semiconductor Group 22 1998-11-01
High-Voltage Transistors
Type
N = NPN
P = PNP
Maximum Ratings Characteristics (TA = 25 °C) Package
VCE0
VICM
mA Ptot
mW fT
MHz ICB0
nA VCB0
VhFE IC
mA VCE
VVCEsat
VIC
mA IB
mA
BF 622 N250 100 1000 100 100 200 50 25 20 0. 5 10 1SOT-89
BF 623 P 250 100 1000 100 100 200 50 25 20 0.5 10 1 SOT-89
BF 720 N300 100 1500 100 10 200 50 25 20 0.6 30 5SOT-223
BF 721 P 300 100 1500 100 10 200 50 25 20 0.6 30 5 SOT-223
BF 722 N250 100 1500 100 10 200 50 25 20 0.6 30 5SOT-223
BF 723 P 250 100 1500 100 10 200 50 25 20 0.6 30 5 SOT-223
BFN 16 N250 500 1000 70 100 200 40 30 10 0.4 20 2SOT-89
BFN 17 P 250 500 1000 100 100 200 40 30 10 0.4 20 2 SOT-89
BFN 18 N300 500 1000 70 100 250 30 30 10 0.5 20 2SOT-89
BFN 19 P 300 500 1000 100 100 250 30 30 10 0.5 20 2 SOT-89
BFN 20 N300 100 1000 100 10 0 250 40 25 20 0.5 10 1SOT-89
BFN 21 P 300 100 1000 100 100 250 40 25 20 0.5 10 1 SOT-89
BFN 22 N250 100 360 100 10 0 200 50 25 20 0.5 10 1SOT-23
BFN 23 P 250 100 360 100 100 200 50 25 20 0.5 10 1 SOT-23
BFN 24 N250 500 360 70 100 200 40 30 10 0.4 20 2SOT-23
BFN 25 P 250 500 360 100 100 200 40 30 10 0.4 20 2 SOT-23
BFN 26 N300 500 360 70 100 250 30 30 10 0.5 20 2SOT-23
BFN 27 P 300 500 360 100 100 250 30 30 10 0.5 20 2 SOT-23
BFN 36 N250 500 1500 70 100 200 40 30 10 0.4 20 2SOT-223
BFN 37 P 250 500 1500 100 100 200 40 30 10 0.4 20 2 SOT-223
BFN 38 N300 500 1500 70 100 250 30 30 10 0.5 20 2SOT-223
BFN 39 P 300 500 1500 100 100 250 30 30 10 0.5 20 2 SOT-223
PZTA 42 N300 500 1500 70 100 200 40 30 10 0.5 20 2SOT-223
PZTA 43 N 200 500 1500 70 100 160 40 30 10 0.4 20 2 SOT-223
PZTA 92 P300 500 1500 100 250 200 25 30 10 0.5 20 2SOT-223
PZTA 93 P 200 500 1500 100 250 160 25 30 10 0.4 20 2 SOT-223
SMBTA 42 N300 500 360 70 100 200 40 30 10 0. 5 20 2SOT-23
SMBTA
42M N300 500 1000 70 100 200 40 30 10 0.5 20 2 SCT-595
SMBTA 43 N200 500 360 70 100 160 40 30 10 0. 4 20 2SOT-23
SMBTA 92 P 300 500 360 100 250 200 25 30 10 0.5 20 2 SOT-23
SMBTA
92M P300 500 1000 100 25 0 200 25 30 10 0.5 20 2SCT-595
New type
Selection Guide
Semiconductor Group 23 1998-11-01
SMBTA 93 P200 500 360 100 250 160 25 30 10 0.4 20 2SOT-23
SXTA 42 N 300 500 1000 70 100 200 40 30 10 0.5 20 2 SOT-89
SXTA 43 N200 500 1000 70 100 160 40 30 10 0.4 20 2SOT-89
SXTA 92 P 300 500 1000 100 25 0 200 25 30 10 0.5 20 2 SOT-89
SXTA 93 P200 500 1000 100 250 160 25 30 10 0. 4 20 2SOT-89
New type
High-Voltage Transistors (cont’d)
Type
N = NPN
P = PNP
Maximum Ratings Characteristics (TA = 25 °C) Package
VCE0
VICM
mA Ptot
mW fT
MHz ICB0
nA VCB0
VhFE IC
mA VCE
VVCEsat
VIC
mA IB
mA
Selection Guide
Semiconductor Group 24 1998-11-01
RF-Diodes
Varactor (Tuning) Diodes
Type Maximum
Ratings Characteristics (TA = 25 °C) Package Chip
Code
(see
below)
VR
VIF
mA CT at
pF VR
VCT
pF VR
VCRatio IR
nA VR
V
BB 439 30 20 29 35.0 25 5.8 20 28 SOD- 323 Q
BB 535 30 20 18.7 1 2.1 28 8.9 10 30 SOD-323 A
BB 545 30 20 20 12.0 28 10.0 10 30 SOD-323 C
BB 555 30 20 18.7 1 2.1 28 8.9 10 30 SCD -80 A
BB 565 30 20 20 12.0 28 10.0 10 30 SCD-80 C
BB 639 30 20 38.3 1 2.65 28 14.5 10 30 SOD -323 K
BB 639 C 30 20 39 12.55 28 15.3 10 30 SOD-323 B
BB 644 30 20 41.8 1 2.55 28 16.4 10 30 SOD -323
BB 659 30 20 38.3 12.65 28 14.5 10 30 SCD-80 K
BB 659C 30 20 39 1 2.55 28 15.3 10 30 SC D -80 B
BB 640 30 20 69 13.05 28 22.6 10 30 SOD-323 N
BB 664 30 20 41.8 1 2.55 28 16.4 10 30 SC D -80
BB 669 30 20 56.5 12.7 28 20.9 10 30 SOD-323
BB 689 30 20 56.5 1 2.7 28 20.9 10 30 SCD-80
BB 804 (Dual) 20 50 44.75 226.15 81.71 20 16 SOT-23 E
BB 814 (Dual) 20 50 44.75 2 20.8 8 2.15 20 16 SOT -23 O
BB 833 30 20 9.3 10.75 28 12.4 20 30 SOD-323 F
BB 835 30 20 9.1 1 0.62 28 14.7 10 30 SOD-323 G
BB 857 30 20 6.6 10.54 28 12.2 10 30 SCD-80
BB 914 (Dual) 20 50 43.75 2 18.7 8 2.34 20 16 SOT -23 P
BBY 51 (Dual) 720 5.30 13.10 41.75 10 6SOT-23 H
BBY 51- 02W 7 20 5.30 1 3.10 4 1.75 10 6 S C D -80 H
BBY 51- 03 W 720 5.30 13.10 41.75 10 6SOD-323 H
BBY 51- 07 (D u al ) 7 20 5.30 1 3.10 4 1.75 10 6 SOT -143 H
BBY 52 (Dual) 720 1.75 11.25 41.40 10 6SOT-23 I
BBY 52- 02W 7 20 1.75 1 1.25 4 1.40 10 6 S C D -80 I
BBY 52- 03 W 720 1.75 11.25 41.40 10 6SOD-323 I
BBY 53 (Dual) 6 20 5.30 1 2.40 3 2.20 10 4 SOT-23 L
BBY 53- 02W 620 5.30 12.40 32.20 10 4SCD-80 L
BBY 53- 03 W 6 20 5.30 1 2.40 3 2.20 10 4 SOD -323 L
BBY 55- 02W 16 20 15 2 6 10 2.5 3 15 SCD-80 H
BBY 55- 03W 16 20 15 2 6 10 2.5 3 15 SOD- 323 H
New type
Selection Guide
Semiconductor Group 25 1998-11-01
Varactor (Tuning) Diodes Characteristic Curves
The curve numbers refer to the chip codes in the preceding table.
Diodes Capacitance CT vs. Reverse Voltage VR
BBY 56- 02W 82041117.532.34 10 8 SCD-80 H
BBY 56- 03W 820 41 117.5 32.34 10 8SOD-323 H
BBY 57- 02W 16 20 17.5 1 4.73 4 3.7 10 16 SCD-80 H
BBY 57- 03W 16 20 17.5 14.73 43.7 10 16 SOD- 323 H
BBY 58- 02W 16 20 18.3 1 6.0 4 3.0 10 16 SCD-80 H
BBY 58- 03W 16 20 18.3 16.0 43.0 10 16 SOD- 323 H
New type
Varactor (Tuning) Diodes
Type Maximum
Ratings Characteristics (TA = 25 °C) Package Chip
Code
(see
below)
VR
VIF
mA CT at
pF VR
VCT
pF VR
VCRatio IR
nA VR
V
Selection Guide
Semiconductor Group 26 1998-11-01
PIN Diodes (General Purpose, Switching)
Type Maximum
Ratings Characteristics (TA = 25 °C) Package Chip
Code
VR
V
IF
mA
rf
IF = 10 µA
f = 100 MHz
rf
IF = 10 mA
f = 100 MHz
CT
VR = 0 V
f = 100 MH z
τL
IF = 10 mA
IR = 6/3 mA
BA 592 35 100 10 0.4 1.20 pF 120 ns SOD-323 P1
BA 595 50 50 1.5 k4.5 0.23 pF 1.6 µsSOD-323P9
BA 597 50 100 2.3 k 4.5 0.32 pF 2.3 µsSOD-323 P5
BA 885 50 50 1,5 4.5 0.23 pF 1,6 µsSOT-23P9
BA 892 35 100 10 0.4 1.20 pF 120 ns SCD-80 P1
BAR 14-1 (Dual) 100 100 2. 5 k 8 0.2 pF 1 µsSOT-23P4
BAR 15-1 (Dual) 100 100 2.5 k8 0.2 pF 1 µsSOT-23 P4
BAR 16-1 (Dual) 100 100 2. 5 k 8 0.2 pF 1 µsSOT-23P4
BAR 17 100 100 1 k 3.5 0.37 pF 3.3 µsSOT-23 P6
B AR 60 (Triple) 100 100 2.5 k7 0.2 pF 1 µsSOT-143P4
B AR 61 (Triple) 100 100 2.5 k7 0. 2 pF 1 µsSOT-143 P4
BAR 63 35 100 70 1 0.3 pF 100 ns SOT-23 P2
BAR 63-04 (Dual ) 35 100 70 1 0.3 pF 100 ns SOT-23 P2
BAR 63-05 (Dual ) 35 100 70 1 0.3 pF 100 ns SOT-23 P2
BAR 63-06 (Dual ) 35 100 70 1 0.3 pF 100 ns SOT-23 P2
BAR 63 -02W 35 100 70 1 0.3 pF 100 ns SC D -80 P2
BAR 63 -03W 35 100 70 1 0.3 pF 100 ns SOD-323 P2
BAR 63-04W (Dual) 35 100 70 1 0.3 pF 100 ns SOT-323 P 2
BAR 63-05W (Dual) 35 100 70 10.3 pF 100 ns SOT-323 P2
BAR 63-06W (Dual) 35 100 70 1 0.3 pF 100 ns SOT-323 P 2
BAR 64 200 100 600 2 0.3 pF 1.4 µsSOT-23 P7
BAR 64-04 (Dual ) 200 100 600 2 0.3 pF 1.4 µsSOT-23P7
BAR 64-05 (Dual ) 200 100 600 2 0.3 pF 1,4 µsSOT-23 P7
BAR 64-06 (Dual ) 200 100 600 2 0.3 pF 1.4 µsSOT-23P7
BAR 64-07 (Dual ) 200 100 600 2 0.3 pF 1.4 µsSOT-143 P7
BAR 64 -02W 200 100 600 2 0.3 pF 1.4 µs SCD-80 P7
BAR 64 -03W 200 100 600 2 0.3 pF 1.4 µsSOD-323 P7
BAR 64-04W (Dual) 200 100 600 2 0.3 pF 1.4 µsSOT-323P7
BAR 64-05W (Dual) 200 100 600 20. 3 pF 1,4 µsSOT-323 P7
BAR 64-06W (Dual) 200 100 600 2 0.3 pF 1.4 µsSOT-323P7
BAR 65 -02W 30 100 6 0.56 0. 6 pF 80 ns SCD-80 P3
BAR 65 -03W 30 100 6 0.56 0.6 pF 80 ns SOD-323 P3
BAR 65-07 30 100 6 0.56 0.6 pF 80 ns SOT-143 P3
New typ e
Selection Guide
Semiconductor Group 27 1998-11-01
BAR 80 35 100 10 0.4 1.2 pF 120 ns MW-4 P1
BAR 81 30 100 6 0.56 0.6 pF 80 ns M W -4 P3
BAR 81W 30 100 6 0.56 0.6 pF 80 ns SOT-343 P3
BAT 18 35 10 0 10 0.4 1.2 pF 120 ns SOT-23 P1
B AT 18-04 (Dual) 35 100 10 0.4 1.2 pF 120 ns SOT-23 P1
B AT 18-05 (Dual) 35 100 10 0.4 1.2 pF 120 ns SOT-23 P1
B AT 18-06 (Dual) 35 100 10 0.4 1.2 pF 120 ns SOT-23 P1
New type
Electrostatic-Discharge-Protection Diode
Type Maximum
Ratings Characteristics (TA = 25 °C) Package Chip
Code
VR
V
IF
mA
rf
IF = 10 µA
f = 100 MH z
rf
IF = 10 mA
f = 100 MH z
CT
VR = 0 V
f = 100 MH z
τL
IF = 10 mA
IR = 6/3 mA
BAR 66 (Dual) 150 200 85 0.95 0.3 pF 700 ns SOT-23
PIN Diodes (General Purpose, Switching)
Type Maximum
Ratings Characteristics (TA = 25 °C) Package Chip
Code
VR
V
IF
mA
rf
IF = 10 µA
f = 100 MHz
rf
IF = 10 mA
f = 100 MHz
CT
VR = 0 V
f = 100 MH z
τL
IF = 10 mA
IR = 6/3 mA
Selection Guide
Semiconductor Group 28 1998-11-01
PIN Diodes Characteristic Curves
The curve numbers refer to the chip codes in the preceding tables.
Forward Re sista n ce rf vs. Forward Current If
Selection Guide
Semiconductor Group 29 1998-11-01
AF-Schottky Diodes/RF-Schottky Diodes
Type Maximum
Ratings Characteristics (TA = 25 °C) Package Chip
Code
VR
VIF
mA CT
pF VF at
mV IF
mA VF at
mV IF
mA
BAS 40 40 120 3.2 310 1720 40 SOT-23 S9
BAS 40-04 (Dual) 40 120 3.2 310 1 720 40 SOT-23 S9
BAS 40-04W (Dual) 40 120 3.2 310 1720 40 SOT-323 S9
BAS 40-05 (Dual) 40 120 3.2 310 1 720 40 SOT-23 S9
BAS 40-05W (Dual) 40 120 3.2 310 1720 40 SOT-323 S9
BAS 40-06 (Dual) 40 120 3.2 310 1 720 40 SOT-23 S9
BAS 40-06W (Dual) 40 120 3.2 310 1720 40 SOT-323 S9
BAS 40-07 (Dual) 40 120 3.2 310 1 720 40 SOT-143 S9
BAS 40-07W (Dual) 40 120 3.2 310 1720 40 SOT-343 S9
BAS 70 70 70 1.5 380 1 690 10 SOT-23 S10
BAS 70-04 (Dual) 70 70 1.5 380 1690 10 SOT-23 S10
B AS 70-04S (Quad) 70 70 1.5 380 1 690 10 SOT-363 S10
BAS 70-04W (Dual) 70 70 1.5 380 1690 10 SOT-323 S10
BAS 70-05 (Dual) 70 70 1.5 380 1 690 10 SOT-23 S10
BAS 70-05W (Dual) 70 70 1.5 380 1690 10 SOT-323 S10
BAS 70-06 (Dual) 70 70 1.5 380 1 690 10 SOT-23 S10
BAS 70-06S (Quad) 70 70 1.5 380 1690 10 SOT-363 S10
B AS 70-06W (Dual) 70 70 1.5 380 1 690 10 SOT-323 S10
BAS 70-07 (Dual) 70 70 1.5 380 1690 10 SOT-143 S10
B AS 70-07W (Dual) 70 70 1.5 380 1 690 10 SOT-343 S10
BAS 125 25 100 0.95 385 1800 35 SOT-23 S11
B AS 125-04 (Dual) 25 100 0.95 385 1 800 35 SOT-23 S11
B AS 125-05 (Dual) 25 100 0.95 385 1800 35 SOT-23 S11
B AS 125-06 (Dual) 25 100 0.95 385 1 800 35 SOT-23 S11
B AS 125-07 (Dual) 25 100 0.95 385 1800 35 SOT-143 S11
B AS 125W 25 100 0.95 385 1 800 35 SOT-323 S11
B AS 125-04W (Dual) 25 100 0.95 385 1800 35 SOT-323 S11
B AS 125-05W (Dual) 25 100 0.95 385 1 800 35 SOT-323 S11
B AS 125-06W (Dual) 25 100 0.95 385 1800 35 SOT-323 S11
B AS 125-07W (Dual) 25 100 0.95 385 1 800 35 SOT-343 S11
B AS 140W 40 120 3.2 385 1800 35 SOD-323 S9
New typ e
Selection Guide
Semiconductor Group 30 1998-11-01
B AS 170W 70 70 1.5 385 1800 35 SOD-323 S10
BAT 14-03W 4 90 0.22 430 1 550 10 SOD-323 S1
BAT 14-099 (Dual) 490 0.22 430 1550 10 SOT-143 S1
B AT 14-099R (Quad) 90 0.38 400 1 480 10 SOT-143 S1
BAT 15-03W 4110 0.21 230 1320 10 SOD-323 S2
B AT 15-099 (Dual) 4 110 0.21 230 1 320 10 SOT-143 S2
B AT 15-099R (Quad) 110 0.37 230 1320 10 SOT-143 S2
BAT 17 4 130 0.55 340 1 425 10 SOT-23 S3
BAT 17W 4130 0.55 340 1425 10 SOT-323 S3
BAT 17-04 (Dual) 4 130 0.55 340 1 425 10 SOT-23 S3
BAT 17-04W (Dual) 4130 0.55 340 1425 10 SOT-323 S3
B AT 17-05W (Dual) 4 130 0.55 340 1 425 10 SOT-323 S3
BAT 17-06 (Dual) 4130 0.55 340 1425 10 SOT-23 S3
B AT 17-06W (Dual) 4 130 0.55 340 1 425 10 SOT-323 S3
BAT 17-07 (Dual) 4130 0.55 340 1425 10 SOT-143 S3
BAT 60A 10 3000 20 120 10 300 1000 SOD-323
BAT 60B 10 3000 20 240 10 400 1000 SOD-323
BAT 64 30 250 4.0 385 10 570 100 SOT-23 S6
BAT 64-04 (Dual) 30 250 4.0 385 10 570 100 SOT-23 S6
B AT 64-04W (Dual) 30 250 4.0 385 10 570 100 SOT-323 S6
BAT 64-05 (Dual) 30 250 4.0 385 10 570 100 SOT-23 S6
B AT 64-05W (Dual) 30 250 4.0 385 10 570 100 SOT-323 S6
BAT 64-06 (Dual) 30 250 4.0 385 10 570 100 SOT-23 S6
B AT 64-06W (Dual) 30 250 4.0 385 10 570 100 SOT-323 S6
BAT 64-07 (Dual) 30 250 4.0 385 10 570 100 SOT-143 S6
B AT 64-07W (Dual) 30 250 4.0 385 10 570 100 SOT-343 S6
BAT 66-05 (Dual) 40 2000 33.0 280 10 470 1000 SOT-223
BAT 68 8 130 0.75 320 1 395 10 SOT-23 S7
New typ e
AF-Schottky Diodes/RF-Schottky Diodes (cont’d)
Type Maximum
Ratings Characteristics (TA = 25 °C) Package Chip
Code
VR
VIF
mA CT
pF VF at
mV IF
mA VF at
mV IF
mA
Selection Guide
Semiconductor Group 31 1998-11-01
BAT 68W 8 130 0.75 320 1 395 10 SOT-323 S7
BAT 68-03W 8130 0.75 320 1395 10 SOD-323 S7
BAT 68-04 (Dual) 8 130 0.75 320 1 395 10 SOT-23 S7
BAT 68-04W (Dual) 8130 0.75 320 1395 10 SOT-323 S7
BAT 68-05 (Dual) 8 130 0.75 320 1 395 10 SOT-23 S7
BAT 68-05W (Dual) 8130 0.75 320 1395 10 SOT-323 S7
BAT 68-06 (Dual) 8 130 0.75 320 1 395 10 SOT-23 S7
BAT 68-06W (Dual) 8130 0.75 320 1395 10 SOT-323 S7
BAT 68-07 (Dual) 8 130 0.75 320 1 395 10 SOT-143 S7
BAT 68-07W (Dual) 8130 0.75 320 1395 10 SOT-343 S7
BAT 70-05 (Dual) 70 1500 48.8 260 10 520 1500 SOT-223
B AT 114-099 (Dual) 490 0.22 580 1680 10 SOT-143 S8
B AT 114-099R (Quad) 90 0.22 580 1 680 10 SOT-143 S8
BAT 165 40 750 8.0 320 10 460 250 SOD-323
BAT 240A (Dual) 240 400 11.5 325 10 470 50 SOT-23
New type
AF-Schottky Diodes/RF-Schottky Diodes (cont’d)
Type Maximum
Ratings Characteristics (TA = 25 °C) Package Chip
Code
VR
VIF
mA CT
pF VF at
mV IF
mA VF at
mV IF
mA
Selection Guide
Semiconductor Group 32 1998-11-01
Schottky-Diodes Characteristic Curves
The curve numbers refer to the chip codes in the preceding tables.
Forward Current If vs. Forward Voltage Vf
Schottky Detector Diodes
Type Maximum
Ratings Characteristics (TA = 25 °C) Package Chip
Code
VR
VIF
mA CT at
pF VR
VVF at
VIF
mA RO at
kVF
VIR at
nA VR
V
BAT 62 40 20 0.4 00.53 2160 0 10 40 SOT-143 S4
BAT 62-02W 40 20 0.4 0 580 2 225 0 10 40 SCD-8 0 S4
BAT 62-03W 40 20 0.4 00.53 2160 0 10 40 SOD-323 S4
New type
BAT 62-07W 40 20 0.4 0 580 2 225 0 10 40 SOT-343 S4
BAT 63 3100 0.65 0.2 0.19 130 0 10 3SOT-143 S5
Selection Guide
Semiconductor Group 33 1998-11-01
AF-Diodes
General Purpose, Switching and Rectifier Diodes
Type Maximum
Ratings Characteri stics (TA = 25 °C) Package
VR
VIF
mA VBR
VIR at
µAVR
VVF at
VIF
mA trr
ns
BAL 74 50 250 50 0. 10 50 1.00 100 4.0 SOT-23
BAL 99 70 250 70 2.50 70 1.25 150 6.0 SO T- 23
BAR 74 50 250 50 0. 10 50 1.00 100 4.0 SOT-23
BAR 99 70 250 70 2.50 70 1.25 150 6.0 SO T- 23
BAS 16 75 250 75 1.00 75 1.25 150 6.0 SOT-23
BAS 16-02W 75 250 75 1.00 75 1.25 150 6.0 SCD - 80
BAS 16-03W 75 250 75 1. 00 75 1.25 150 6.0 SOD-323
BAS 16W 75 250 75 1.00 75 1.25 150 6.0 SOT-323
BAS 19 100 250 120 0.10 120 1.25 200 50.0 SOT-23
BAS 20 150 250 200 0.10 20 0 1.25 200 50.0 SOT-23
BAS 21 200 250 250 0.10 250 1.25 200 50.0 SOT-23
BAS 28 (Dual) 75 200 85 1.00 75 1. 25 150 6.0 SO T- 143
BAS 28W (Dual) 75 200 85 1.00 75 1.25 150 6.0 SOT-343
BAS 78A 50 1000 50 1.00 50 2.00 2000 1.0 µs SOT-223
BAS 78B 100 1000 100 1. 00 100 2.00 2000 1.0 µsSOT-223
BAS 78C 200 1000 200 1. 00 20 0 2.00 2000 1.0 µs SOT-223
BAS 78D 400 1000 400 1. 00 400 2.00 2000 1.0 µsSOT-223
BAS 79A (Dual) 50 1000 50 1. 00 50 2.00 2000 1.0 µs SOT-223
BAS 79B (Dual) 100 1000 100 1.00 100 2. 00 2000 1.0 µsSOT-223
BAS 79C (Dual) 200 1000 200 1.00 20 0 2.00 2000 1.0 µs SOT-223
BAS 79D (Dual) 400 1000 400 1.00 400 2. 00 2000 1.0 µsSOT-223
BAV 70 (D ual) 70 200 70 2. 50 70 1.25 150 6.0 SOT-23
BAV 70W (Dual) 70 200 70 2.50 70 1.25 150 6.0 SOT- 323
BAV 74 (D ual) 50 200 50 0. 10 50 1.00 100 4.0 SOT-23
BAV 99 (Dual) 70 200 70 2.50 70 1.25 150 6.0 SOT- 23
BAV 99W (Dual) 70 200 70 2.50 70 1.25 1 50 6.0 SOT-323
BAW 56 (Dual) 70 200 70 2.50 70 1.25 150 6.0 SOT-23
BAW 56W (Dual) 70 200 70 2.50 7 0 1. 25 150 6.0 SOT-323
BAW 78A 50 1000 50 1.00 50 2.00 2000 1.0 µsSOT-89
BAW 78B 100 1000 100 1.00 100 2.00 2000 1 .0 µsSOT-89
BAW 78C 200 1000 200 1.00 200 2.00 2000 1.0 µsSOT-89
BAW 78D 400 1000 400 1.00 400 2.00 2000 1 .0 µsSOT-89
New typ e
Selection Guide
Semiconductor Group 34 1998-11-01
BAW 78M 400 1000 400 1. 00 40 0 2.00 2000 1.0 µsSCT-595
BAW 79A (Dual) 50 1000 50 1.00 50 2.00 2000 1.0 µsSOT-89
BAW 79B (Dual ) 100 1000 100 1.00 10 0 2.00 2000 1.0 µsSOT-89
BAW 79C (Dual) 200 1000 200 1.00 200 2.00 2000 1.0 µsSOT-89
BAW 79D (Dual ) 400 1000 400 1.00 40 0 2.00 2000 1.0 µsSOT-89
BAW 100 (Dual) 75 200 70 2.50 70 1.25 150 6.0 SOT-143
BAW 101 (Dual) 300 250 300 0.15 250 1.30 1 00 1.0 µs SOT-143
SMBD 914 70 200 100 5.00 75 1.00 100 4.0 SOT-23
SMBD 2835 (Dual) 30 200 75 0.10 30 1.20 100 6.0 SOT-23
SMBD 2836 (Dual) 50 200 75 0.10 50 1.20 100 6.0 SOT-23
SMBD 2837 (Dual) 30 200 75 0.10 30 1.20 100 6.0 SOT-23
SMBD 2838 (Dual) 50 200 75 0.10 50 1.20 100 6.0 SOT-23
SMBD 6050 70 250 70 0.10 50 1.10 100 10.0 SOT-23
SMBD 6100 (Dual) 70 200 70 0.10 50 1.10 100 15.0 SOT-23
SMBD 7000 (Dual) 100 200 100 0. 50 100 1.10 100 15.0 SOT-23
New type
Diode Arrays
BAS 16S (Triple) 75 250 75 1. 00 75 1.25 150 6.0 SOT-363
BAV 70 S (Quad) 70 200 1.5 2.5 70 1.25 150 6.0 SOT-363
BAV 99S (Quad) 70 200 70 2.50 70 1.25 150 6.0 SOT-363
BAW 56S (Quad) 70 200 70 2. 50 70 1. 25 150 6.0 SOT-3 63
New typ e
Low Leakage Diodes
BAS 116 75 250 75 5 (nA ) 75 1.25 150 3.0 µsSOT-23
BAW 156 (Dual ) 70 200 70 5 (nA) 70 1.25 150 3.0 µsSOT-23
BAV 170 (Dual) 70 200 70 5 ( nA) 70 1.25 150 3.0 µsSOT-23
BAV 199 (Dual) 70 200 70 5 (nA) 70 1.25 150 3.0 µsSOT-23
Bridge Rectifier
BGX 50A (Bridge) 50 140 50 0.20 50 2.60 100 6.0SOT-143
AF-Diodes
General Purpose, Switching and Rectifier Diodes (cont’d)
Type Maximum
Ratings Characteri stics (TA = 25 °C) Package
VR
VIF
mA VBR
VIR at
µAVR
VVF at
VIF
mA trr
ns
Selection Guide
Semiconductor Group 35 1998-11-01
For complete information and data sheets please contact us on our internet homepage
http://www.siemens.de/semiconductor/products/35/35.htm
Leaded Components
Varactor Diodes (leaded)
Type Maximum
Ratings Characteristics (TA = 25 °C) Package
VR
VIF
mA CT at
pF VR
VCT at
pF VR
VCRatio IRat
nA VR
V
BB 112 12 50 440 - 520 116.50 - 29.00 8.5 18.00 50 10 TO-92a
Not for new design
BB 304 32 50 42 - 47.5 2 25.00 8.0 1.65 - 1.75 20 30 TO-92b
Transistors (leaded)
Type
N = NPN
P = PNP
Maximum
Ratings Characteristics (TA = 25 °C) Package
VCE0
VIC
mA Ptot
mW fT
MHz ICB0 at
nA VCB0
VhFE at IC
mA VCE
VVCEsat at
VIC
mA IB
mA
High-Voltage Transistors
BF 420 N300 50 830 100 10 200 50 25 20 20.0 25 TO-92d
BF 421 P 300 50 830 100 10 200 50 25 20 20.0 25 TO-92d
BF 422 N250 50 830 100 10 200 50 25 20 20.0 25 TO-92d
BF 423 P 250 50 830 100 10 200 50 25 20 20.0 25 TO-92d
BFP 22 N200 200 625 70 100 160 50 30 10 0.5 20 2TO-92c
BFP 23 P 200 200 625 70 100 160 50 30 10 0.4 20 2 TO-92c
BFP 25 N300 200 625 70 100 250 40 30 10 0.4 20 2TO-92c
BFP 26 P 300 200 625 70 100 250 40 30 10 0.5 20 2 TO-92c
MPSA 42 N300 500 625 70 100 200 40 30 10 0. 5 20 2TO-92c
MPSA 43 N 200 500 625 70 100 160 40 30 10 0.4 20 2 TO-92c
MPSA 92 P300 500 625 70 100 200 25 30 10 0. 5 20 2TO-92c
MPSA 93 P 200 500 625 70 100 160 30 30 10 0.4 20 2 TO-92c
Not for new design
Selection Guide
Semiconductor Group 36 1998-11-01
Not for new design
Not for new design
Darlington Transistors
BC 516 P30 500 625 200 100 30 30000 20 2 1.0 100 0.1 TO-92d
BC 517 N 30 500 625 150 100 30 30000 20 2 1.0 100 0.1 TO-92d
BC 617 N40 500 625 150 100 40 20000 200 5 1.1 200 0.2 TO-92d
BC 618 N 55 500 625 150 100 60 10000 200 5 1.1 200 0.2 TO-92d
BC 875 N45 1000 800 150 100 60 2000 500 10 1.3 500 0.5 TO-92d
BC 876 P 45 1000 800 150 100 60 20 00 500 10 1.3 500 0.5 TO-92d
BC 877 N60 1000 800 150 100 80 2000 500 10 1.3 500 0.5 TO-92d
BC 878 P 60 1000 800 150 100 80 20 00 500 10 1.3 500 0.5 TO-92d
BC 879 N80 1000 800 150 100 90 2000 500 10 1.3 500 0.5 TO-92d
BC 880 P 80 1000 800 150 100 90 20 00 500 10 1.3 500 0.5 T O-92d
RF-Transistors
Type
N = NPN
P = PNP
Maximum Ratings Char acteristics (TA = 25 °C) Package
VCE0
VIC
mA Ptot
mW fT
GHz F
dB IC
mA VCE
Vf
MHz GPC
dB IC
mA VCE
Vf
MHz
BF 414 P30 25 300 0.56 3.0 510 100 TO-92d
BF 506 P 35 30 300 0.55 3.0 2 10 200 TO-92d
BF 959 N20 100 500 1.10 4.0 20 10 200 TO-92d
Transistors (leaded) (cont’d)
Type
N = NPN
P = PNP
Maximum
Ratings Characteristics (TA = 25 °C) Package
VCE0
VIC
mA Ptot
mW fT
MHz ICB0 at
nA VCB0
VhFE at IC
mA VCE
VVCEsat at
VIC
mA IB
mA
Selection Guide
Semiconductor Group 37 1998-11-01
For complete information and data sheets please contact us on our internet homepage
http://www.siemens.de/semiconductor/products/35/35.htm
Not for new design
* Available in
hFE subgroups.
General Purpose and Switching Transistors
Type
N = NPN
P = PNP
Maximu m
Ratings Characteristics (TA = 25 °C) Package
VCB0
VIC
mA Ptot
mW fT
MHz ICB0 at
nA VCB0
VhFE at IC
mA VCE
VVCEsat at
VIC
mA IB
mA
BC 327 P50 800 625 200 100 45 100 630* 100 1 0.70 500 50.0 TO-92d
BC 328 P 30 800 625 200 100 25 100 630* 100 1 0.70 500 50.0 TO-92d
BC 337 N50 800 625 170 100 45 100 630* 100 1 0.70 500 50.0 TO-92d
BC 338 N 30 800 625 170 100 25 100 630* 100 1 0.70 500 5 0. 0 TO-92d
BC 368 N25 1000 800 100 100 25 85 375 500 1 0.50 1000 100.0 TO-92d
BC 369 P 25 1000 800 100 100 25 85 375 500 1 0.50 100 0 100.0 TO-92 d
BC 635 N45 1000 800 100 100 30 40 250 150 2 0.50 500 50.0 TO-92d
BC 636 P 45 1000 800 100 100 30 40 250 150 2 0.50 500 50.0 TO-92 d
BC 637 N60 1000 800 100 100 30 40 160 150 2 0.50 500 50.0 TO-92d
BC 638 P 60 1000 800 100 100 30 40 160 150 2 0.50 500 50.0 TO-92 d
BC 639 N100 1000 800 100 100 30 40 160 150 2 0. 50 500 50.0 TO-92d
BC 640 P 100 1000 800 100 100 30 40 160 150 2 0.50 500 5 0. 0 TO-92d
BCX 12 N125 800 625 100 100 100 63 100 1 1.00 500 50.0 TO-92d
BCX 13 P 125 800 625 120 100 100 63 100 1 1.00 500 5 0. 0 TO-92d
BCX 58 N32 100 500 200 20 32 120 63 0* 2 5 0.50 100 2.50 TO-92d
BCX 59 N 45 100 500 200 20 45 120 630* 2 5 0.50 100 2.50 TO -92d
BCX 78 P32 100 500 250 20 32 120 63 0* 2 5 0.60 100 2.50 TO-92d
BCX 79 P 45 100 500 250 20 45 120 63 0* 2 5 0.60 100 2.50 TO-92d