Document Number: 93037 For technical questions, contact: diodes-tech@vishay.com www.vishay.com
Revision: 30-Jul-08 1
HEXFRED®
Ultrafast Soft Recovery Diode, 8 A
HFA08PB120
Vishay High Power Products
FEATURES
• Ultrafast recovery
• Ultrasoft recovery
• Very low IRRM
• Very low Qrr
• Specified at operating conditions
• Designed and qualified for industrial level
BENEFITS
• Reduced RFI and EMI
• Reduced power loss in diode and switching transistor
• Higher frequency operation
• Reduced snubbing
• Reduced parts count
DESCRIPTION
HFA08PB120 is a state of the art ultrafast recovery diode.
Employing the latest in epitaxial construction and advanced
processing techniques it features a superb combination of
characteristics which result in performance which is
unsurpassed by any rectifier previously available. With basic
ratings of 1200 V and 8 A continuous current, the
HFA08PB120 is especially well suited for use as the
companion diode for IGBTs and MOSFETs. In addition to
ultrafast recovery time, the HEXFRED® product line features
extremely low values of peak recovery current (IRRM) and
does not exhibit any tendency to “snap-off” during the
tb portion of recovery. The HEXFRED features combine to
offer designers a rectifier with lower noise and significantly
lower switching losses in both the diode and the switching
transistor. These HEXFRED advantages can help to
significantly reduce snubbing, component count and
heatsink sizes. The HEXFRED HFA08PB120 is ideally
suited for applications in power supplies and power
conversion systems (such as inverters), motor drives, and
many other similar applications where high speed, high
efficiency is needed.
PRODUCT SUMMARY
VR1200 V
VF at 8 A at 25 °C 3.3 V
IF(AV) 8 A
trr (typical) 28 ns
TJ (maximum) 150 °C
Qrr (typical) 140 nC
dI(rec)M/dt (typical) at 125 °C 85 A/µs
IRRM (typical) 4.5 A
TO-247AC modified
Cathode
to base
13
Anode
1
Anode
2
2
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Cathode to anode voltage VR1200 V
Maximum continuous forward current IFTC = 100 °C 8
ASingle pulse forward current IFSM 130
Maximum repetitive forward current IFRM 32
Maximum power dissipation PD
TC = 25 °C 73.5 W
TC = 100 °C 29
Operating junction and storage temperature range TJ, TStg - 55 to + 150 °C
www.vishay.com For technical questions, contact: diodes-tech@vishay.com Document Number: 93037
2Revision: 30-Jul-08
HFA08PB120
Vishay High Power Products HEXFRED®
Ultrafast Soft Recovery Diode, 8 A
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Cathode to anode
breakdown voltage VBR IR = 100 µA 1200 - -
V
Maximum forward voltage VFM
IF = 8.0 A
See fig. 1
-2.63.3
IF = 16 A - 3.4 4.3
IF = 8.0 A, TJ = 125 °C - 2.4 3.1
Maximum reverse
leakage current IRM
VR = VR rated See fig. 2 -0.3110µA
TJ = 125 °C, VR = 0.8 x VR rated - 135 1000
Junction capacitance CTVR = 200 V See fig. 3 - 11 20 pF
Series inductance LSMeasured lead to lead 5 mm from package body - 8.0 - nH
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Reverse recovery time
See fig. 5, 10
trr IF = 1.0 A, dIF/dt = 200 A/µs, VR = 30 V - 28 -
nstrr1 TJ = 25 °C
IF = 8.0 A
dIF/dt = 200 A/µs
VR = 200 V
-6395
trr2 TJ = 125 °C - 106 160
Peak recovery current
See fig. 6
IRRM1 TJ = 25 °C - 4.5 8.0 A
IRRM2 TJ = 125 °C - 6.2 11
Reverse recovery charge
See fig. 7
Qrr1 TJ = 25 °C - 140 380 nC
Qrr2 TJ = 125 °C - 335 880
Peak rate of recovery
current during tb
See fig. 8
dI(rec)M/dt1 TJ = 25 °C - 133 -
A/µs
dI(rec)M/dt2 TJ = 125 °C - 85 -
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Lead temperature Tlead 0.063" from case (1.6 mm) for 10 s - - 300 °C
Thermal resistance,
junction to case RthJC --1.7
K/W
Thermal resistance,
junction to ambient RthJA Typical socket mount - - 40
Thermal resistance,
case to heatsink RthCS Mounting surface, flat, smooth and greased - 0.25 -
Weight -6.0- g
-0.21- oz.
Mounting torque 6.0
(5.0) -12
(10)
kgf · cm
(lbf · in)
Marking device Case style TO-247AC modified (JEDEC) HFA08PB120
Document Number: 93037 For technical questions, contact: diodes-tech@vishay.com www.vishay.com
Revision: 30-Jul-08 3
HFA08PB120
HEXFRED®
Ultrafast Soft Recovery Diode, 8 A
Vishay High Power Products
Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
1
10
TJ = 150 °C
TJ = 125 °C
TJ = 25 °C
01046
IF - Instantaneous
Forward Current (A)
100
28
VFM - Forward Voltage Drop (V)
0.01
0.1
1
10
100
0 300 600
V
R
- Reverse Voltage (V)
I
R
- Reverse Current (µA)
TJ = 150 °C
TJ = 125 °C
TJ = 25 °C
1000
900 1200
TJ = 100 °C
10
100
1 10 100 1000
1
V
R
- Reverse Voltage (V)
C
T
- Junction Capacitance (pF)
TJ = 25 °C
10 000
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1
t1 - Rectangular Pulse Duration (s)
ZthJC - Thermal Impedance (°C/W)
Single pulse
(thermal resistance)
PDM
t1
t2
Notes:
1. Duty factor D = t1/t2
2. Peak TJ = PDM x ZthJC + TC
10
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
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4Revision: 30-Jul-08
HFA08PB120
Vishay High Power Products HEXFRED®
Ultrafast Soft Recovery Diode, 8 A
Fig. 5 - Typical Reverse Recovery Time vs. dIF/dt
Fig. 6 - Typical Recovery Current vs. dIF/dt
Fig. 7 - Typical Stored Charge vs. dIF/dt
Fig. 8 - Typical dI(rec)M/dt vs. dIF/dt
160
20
100 1000
dI
F
/dt (A/µs)
t
rr
(ns)
100
VR = 160 V
TJ = 125 °C
TJ = 25 °C
140
60
40
80
120
IF = 8 A
IF = 4 A
20
16
0
100 1000
dI
F
/dt (A/µs)
I
rr
(A)
8
IF = 8 A
IF = 4 A
VR = 160 V
TJ = 125 °C
TJ = 25 °C
4
12
1200
800
100 1000
dI
F
/dt (A/µs)
Q
rr
(nC)
IF = 8 A
IF = 4 A
VR = 160 V
TJ = 125 °C
TJ = 25 °C
400
200
600
0
1000
1000
100
100 1000
dIF/dt (A/µs)
dI(rec)M/dt (A/µs)
VR = 160 V
TJ = 125 °C
TJ = 25 °C
IF = 8 A
IF = 4 A
10
Document Number: 93037 For technical questions, contact: diodes-tech@vishay.com www.vishay.com
Revision: 30-Jul-08 5
HFA08PB120
HEXFRED®
Ultrafast Soft Recovery Diode, 8 A
Vishay High Power Products
Fig. 9 - Reverse Recovery Parameter Test Circuit
Fig. 10 - Reverse Recovery Waveform and Definitions
IRFP250
D.U.T.
L = 70 µH
V
R
= 200 V
0.01 Ω
G
D
S
dI
F
/dt
adjust
Q
rr
0.5 I
RRM
dI
(rec)M
/dt
0.75 I
RRM
I
RRM
t
rr
t
b
t
a
I
F
dI
F
/dt
0
(1)
(2)
(3)
(4)
(5)
(1) dIF/dt - rate of change of current
through zero crossing
(2) IRRM - peak reverse recovery current
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
(4) Qrr - area under curve defined by trr
and IRRM
trr x IRRM
2
Qrr =
(5) dI(rec)M/dt - peak rate of change of
current during tb portion of trr
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6Revision: 30-Jul-08
HFA08PB120
Vishay High Power Products HEXFRED®
Ultrafast Soft Recovery Diode, 8 A
ORDERING INFORMATION TABLE
1- HEXFRED® family
2- Process designator: A = Electron irradiated
B = Platinum diffused
3-Current rating (08 = 8 A)
4-Package outline (PB = TO-247, 2 pins)
5- Voltage rating (120 = 1200 V)
6- None = Standard production
PbF = Lead (Pb)-free
Device code
51324
6
HF A 08 PB 120 -
LINKS TO RELATED DOCUMENTS
Dimensions http://www.vishay.com/doc?95253
Part marking information http://www.vishay.com/doc?95255
Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1
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