SFH4750-EA - OSRAM Opto Semiconductors

SFH 4750

OSTAR® - Lighting IR 6-fold with Optics (850nm)

Lead (Pb) Free Product - RoHS Compliant

2010-02-09 1

Wesentliche Merkmale

•3.5 W optische Leistung bei IF=1A

• Aktive Chipfläche 2.1 x 3.2 mm2

• max. Gleichstrom 1 A

• niedriger Wärmewiderstand (3 K/W)

• Emissionswellenlänge 850 nm

•ESD-sicher bis 2 kV nach JESD22-A114-B

Anwendungen

• Infrarotbeleuchtung für Kameras

• Überwachungssysteme

• IR-Datenübertragung

• Verkehrsüberwachungssysteme

• Beleuchtung für Bilderkennungssysteme

• Nicht für Anwendungen im Automobilbereich

Sicherheitshinweise

Je nach Betriebsart emittieren diese Bauteile

hochkonzentrierte, nicht sichtbare Infrarot-

Strahlung, die gefährlich für das menschliche

Auge sein kann. Produkte, die diese Bauteile

enthalten, müssen gemäß den Sicherheits-

richtlinien der IEC-Normen 60825-1 und 62471

behandelt werden.

Typ

Type

Bestellnummer

Ordering Code

Strahlstärke1) (IF = 1A, tp = 20 ms)

Radiant intensity1) Ιe (mW/sr)

1) gemessen bei einem Raumwinkel Ω = 0.01 sr / measured at a solid angle of Ω = 0.01 sr.

SFH 4750 Q65110A8280 > 630 (typ. 1000)

Features

•3.5 W optical power at IF=1A

• Active chip area 2.1 x 3.2 mm2

• max. DC-current 1 A

• Low thermal resistance (3 K/W)

• Spectral emission at 850 nm

• ESD save up to 2 kV acc. to JESD22-A114-B

Applications

• Infrared Illumination for cameras

• Surveillance systems

• IR Data Transmission

• Intelligent Transportation Systems

• Machine vision systems

• Not released for automotive applications

Safety Advices

Depending on the mode of operation, these

devices emit highly concentrated non visible

infrared light which can be hazardous to the

human eye. Products which incorporate these

devices have to follow the safety precautions

given in IEC 60825-1 and IEC 62471.

2010-02-09 2

SFH 4750

Grenzwerte TB1) = 25 °C

Maximum Ratings

Bezeichnung

Parameter

Symbol

Wert

Value

Einheit

Unit

Betriebs- und Lagertemperatur

Operating and storage temperature range

TB, op , TB, stg – 40 … + 100 °C

Sperrschichttemperatur

Junction temperature

TJ+ 145 °C

Sperrspannung

Reverse voltage

VR0.5 V

Vorwärtsgleichstrom

Forward current

IF1 A

Stoßstrom, tp = 100 µs, D = 0

Surge current

IFSM 5 A

Leistungsaufnahme,

Power consumption

Ptot 12 W

Thermische Verlustleistung

Thermal power-dissipation

Pth 9.8 W

Wärmewiderstand Sperrschicht / Bodenplatte

Thermal resistance Junction / Base plate

RthJB 3K/W

1) TB = Temperatur auf der Rückseite der Metallkernplatine / Temperature at the backside of the base plate.

Kennwerte (TB = 25 °C)

Characteristics

Bezeichnung

Parameter

Symbol

Wert

Value

Einheit

Unit

Wellenlänge der Strahlung

Wavelength at peak emission

IF = 1 A, tp = 10 ms

λpeak 860 nm

Schwerpunkts-Wellenlänge der Strahlung

Centroid wavelength

IF = 1 A, tp = 10 ms

λcentroid 850 nm

Spektrale Bandbreite bei 50% von Imax

Spectral bandwidth at 50% of Imax

IF = 1 A, tp = 10 ms

Δλ 30 nm

Abstrahlwinkel

Half angle

ϕ± 70 Grad

deg.

SFH 4750

2010-02-09 3

Abmessungen der aktiven Chipfläche1)

Dimension of the active chip area

L × B

L × W

2.1 × 3.2 mm²

Schaltzeiten, Ie von 10% auf 90% und von 90%

auf 10%, IF = 5 A, RL = 50 Ω

Switching times, Ιe from 10% to 90% and from

90% to 10%, IF = 5 A, RL = 50 Ω

tr, tf10, 10 ns

Durchlassspannung

Forward voltage

IF = 1 A, tp = 100 µs

VF9.5 (< 12) V

Gesamtstrahlungsfluss

Total radiant flux

IF = 1 A, tp = 100 μs

Φe3.5 W

Temperaturkoeffizient von Ie bzw. Φe

Temperature coefficient of Ie or Φe

IF = 1 A, tp = 10 ms

TCI– 0.3 %/K

Temperaturkoeffizient von VF

Temperature coefficient of VF

IF = 1 A, tp = 10 ms

TCV– 6 mV/K

Temperaturkoeffizient von λ

Temperature coefficient of λ

IF = 1 A, tp = 10 ms

TCλ,centroid + 0.3 nm/K

1) Die aktive Chipfläche besteht aus 6 einzelnen Chips mit je 1 x 1 mm².

The active chip area consists of 6 single chips with 1 x 1 mm² each.

Kennwerte (TB = 25 °C)

Characteristics (cont’d)

Bezeichnung

Parameter

Symbol

Wert

Value

Einheit

Unit

2010-02-09 4

SFH 4750

Strahlstärke1) Ιe

Radiant Intensity1) Ιe

1) Nur eine Gruppe in einer Verpackungseinheit (Streuung kleiner 1.6:1)

Only one group in one packing unit (variation lower 1.6:1)

Bezeichnung

Parameter

Symbol Werte

Values

Einheit

Unit

SFH 4750 -EA SFH 4750 -EB

Strahlstärke

Radiant Intensity

IF = 1 A, tp = 20 ms

Ιe min

Ιe max

630

1000

800

1250

mW/sr

Abstrahlcharakteristik

Radiation Characteristics Irel = f (ϕ)

OHF04180

0˚ 20˚ 40˚ 60˚ 80˚ 100˚ 120˚0.40.60.81.0

100˚

90˚

80˚

70˚

60˚

50˚

0˚10˚20˚30˚40˚

0.2

0.4

0.6

0.8

1.0

SFH 4750

2010-02-09 5

Relative spektrale Emission

Relative Spectral Emission

Irel = f (λ), TB = 25 °C

Max. zulässiger Durchlassstrom

Max. Permissible Forward Current

IF = f (TB), RthJB = 3 K/W

700

0nm

OHF04132

100

950750 800 850

rel

0˚C

OHF04168

0.2

0.4

0.6

0.8

1.0

1.2

20 40 60 80 120

Durchlassstrom

Forward Current

IF = f (VF), TB = 25 °C,

Single pulse, tp = 100 μs

Zulässige Impulsbelastbarkeit

Permissible Pulse Handling

Capability IF = f (tp), TB = 85 °C,

Duty cycle D = parameter

OHF04166

-2

-1

7 9 11 13 15

-5

OHF04167

-4

-3

-2

-1

1010

DTT

0.01

0.33

0.5

0.2

0.1

0.02

0.005

0.05

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.5

Relativer Gesamtstrahlungsfluss

Relative Total Radiant Flux

Φe/Φe(1A) = f (IF), TB = 25 °C,

Single pulse, tp = 100 μs

OHF03848

10-3

101

10-1

-2

10 10 0

10 1

1055

-2 -1

Φ(1 A)

Φe

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SFH 4750

Anschlusskontaktierung

Contacting

Drahttyp

Wire type

Durchmesser

Diameter

Lötspitze

Solder Tip

Temperatur

Temperature

Lötzeit

Solder Time

AWG 18 ~0.8 mm

(Litze;

flexible wire)

3.2 mm

(Meisel;

Chisel)

250 °C

350 °C

16 sec.

6 sec

AWG 20 ~0.5 mm

(Litze;

flexible wire)

3.2 mm

(Meisel;

Chisel)

250 °C

350 °C

14 sec.

5 sec

AWG 22 ~0.3 mm

(Litze;

flexible wire)

3.2 mm

(Meisel;

Chisel)

250 °C

350 °C

9 sec.

3 sec

SFH 4750

2010-02-09 7

Maßzeichnung und Ersatzschaltbild

Package Outlines and equivalent circuit diagram

Maße in mm (inch) / Dimensions in mm (inch).

Published by OSRAM Opto Semiconductors GmbH

Leibnizstraße 4, D-93055 Regensburg

www.osram-os.com

The information describes the type of component and shall not be considered as assured characteristics.

Terms of delivery and rights to change design reserved. Due to technical requirements components may contain

dangerous substances. For information on the types in question please contact our Sales Organization.

Packing

Please use the recycling operators known to you. We can also help you – get in touch with your nearest sales office.

By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing

material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs

incurred.

Components used in life-support devices or systems must be expressly authorized for such purpose! Critical

components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS.

1 A critical component is a component usedin a life-support device or system whose failure can reasonably be expected

to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system.

2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain

and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered.