© 2013 IXYS All rights reserved 1 - 5
MCC 225
MCD 225
IXYS reserves the right to change limits, test conditions and dimensions. 20130813c
ITRMS = 2x 400 A
ITAVM = 2x 221 A
VRRM = 1200-1800 V
Thyristor Modules
Thyristor/Diode Modules
Features
• International standard package
• Direct Copper Bonded Al2O3-ceramic
with copper base plate
• Planar passivated chips
• Isolation voltage 3600 V~
• UL registered, E 72873
• Keyed gate/cathode twin pins
Applications
• Motor control, softstarter
• Power converter
• Heat and temperature control for
industrial furnaces and chemical
processes
• Lighting control
• Solid state switches
Advantages
• Simple mounting
• Improved temperature and power
cycling
• Reduced protection circuits
Symbol Conditions Maximum Ratings
ITRMS, IFRMS
ITAVM, IFAVM
TVJ = TVJM
TC = 85°C; 180° sine
400
221
A
A
ITSM, IFSM TVJ = 45°C; t = 10 ms (50 Hz)
VR = 0 t = 8.3 ms (60 Hz)
8000
8500
A
A
TVJ = TVJM; t = 10 ms (50 Hz)
VR = 0 t = 8.3 ms (60 Hz)
7000
7500
A
A
I2tTVJ = 45°C; t = 10 ms (50 Hz)
VR = 0 t = 8.3 ms (60 Hz)
320 000
300 000
A2s
A2s
TVJ = TVJM; t = 10 ms (50 Hz)
VR = 0 t = 8.3 ms (60 Hz)
245 000
246 000
A2s
A2s
(di/dt)cr TVJ = TVJM;
f = 50 Hz; tp = 200 µs;
repetitive, IT = 750 A 100 A/µs
VD = 2/3 VDRM;
IG = 1 A;
diG /dt = 1 A/µs
non repetitive, IT = ITAVM 500 A/µs
(dv/dt)cr TVJ = TVJM; VD = 2/3 VDRM;
RGK = ∞; method 1 (linear voltage rise)
1000 V/µs
PGM
PGAV
TVJ = TVJM; tp = 30 µs
IT = IT(AV)M; tp = 500 µs
120
60
20
W
W
W
VRGM 10 V
TVJ
TVJM
Tstg
-40...+130
130
-40...+125
°C
°C
°C
VISOL 50/60 Hz, RMS t = 1 min
IISOL < 1 mA t = 1 s
3000
3600
V~
V~
MdMounting torque (M6)
Terminal connection torque (M8)
4.5 - 7
11 - 13
Nm
Nm
Weight Typical including screws 750 g
VRSM VRRM Type
VDSM VDRM
V V
1300 1200 MCC 225-12io1 MCD 225-12io1
1500 1400 MCC 225-14io1 MCD 225-14io1
1700 1600 MCC 225-16io1 MCD 225-16io1
1900 1800 MCC 225-18io1 MCD 225-18io1
Data according to IEC 60747 and refer to a single diode unless otherwise stated.
1
3
26
7
5
4
3 6 7 1 5 4 2
3 1 5 4 2
MCC
MCD
E72873
© 2013 IXYS All rights reserved 2 - 5
MCC 225
MCD 225
IXYS reserves the right to change limits, test conditions and dimensions. 20130813c
Symbol Conditions Characteristic Values
typ. max.
IRRM, IDRM VR / VD = VRRM / VDRM TVJ = TVJM 40 mA
VT, VFIT; IF = 600 A TVJ = 25°C 1.4 V
VT0
rt
For power-loss calculations only
TVJ = TVJM
0.8
0.76
V
mW
VGT
IGT
VD = 6 V TVJ = 25°C
TVJ = -40°C
VD = 6 V TVJ = 25°C
TVJ = -40°C
2
3
150
220
V
V
mA
mA
VGD
IGD
VD = 2/3 VDRM; TVJ = TVJM 0.25
10
V
mA
ILtp = 30 µs; VD = 6 V TVJ = 25°C
IG = 0.45 A; diG /dt = 0.45 A/µs
200 mA
IHVD = 6 V; RGK = ∞; TVJ = 25°C 150 mA
tgd VD = ½VDRM TVJ = 25°C
IG = 1 A; diG /dt = 1 A/µs
2 µs
tqVD = 2/3 VDRM TVJ = TVJM
dv/dt = 50 V/µs; -di/dt = 10 A/µs
IT = 300 A; VR = 100 V; tp = 200 µs
200 µs
QS
IRM
IT = 300 A; -di/dt = 50 A/µs TVJ = TVJM 760
275
µC
A
RthJC
RthJK
per thyristor; DC current
per module
per thyristor; DC current
per module
0.157
0.079
0.197
0.099
K/W
K/W
K/W
K/W
dS
dA
a
Creeping distance on surface
Creepage distance in air
Maximum allowable acceleration
12.7
9.6
50
mm
mm
m/s2
6
5
4
3
1
limit
typ.
IG
10-3 10-2 10-1 100101102
0.1
1
10
1
10
100
2
0.01 0.1 1
IGD, TVJ = 130°C
A
3: IGT, TVJ = -40°C
2: IGT, T4 = 25°C
1: IGT, TVJ = 130°C
4: PGM = 20 W
5: PGM = 60 W
6: PGM = 120 W
TVJ = 25°C
VG
[V]
IG [A]
tgd
[μs]
IG [A]
Fig. 2 Gate trigger characteristics
Fig. 3 Gate trigger delay time
Fig. 1 Forward characteristics
0
100
200
300
400
500
600
700
800
900
0 0.5 1 1.5 2
V_T [V]
I_T [A]
Fig. 2a Forward voltage drop
IT
[A]
VT [V]
© 2013 IXYS All rights reserved 3 - 5
MCC 225
MCD 225
IXYS reserves the right to change limits, test conditions and dimensions. 20130813c
Dimensions in mm (1 mm = 0.0394“)
Optional accessories for modules
Keyed gate/cathode twin plugs with wire length = 350 mm, gate = white, cathode = red
Type ZY 180L (L = Left for pin pair 4/5)
Type ZY 180R (R = Right for pin pair 6/7)
2.8 x 0.8
SW 13
M8 x 20
10 2
49
45
43
1
2 3
7654
80
92
115
6.2
20 22.5 35 28.5
50
38
5
18
UL 758, style 3751
52
+0
-1,4
32 +0
-1,9
© 2013 IXYS All rights reserved 4 - 5
MCC 225
MCD 225
IXYS reserves the right to change limits, test conditions and dimensions. 20130813c
0.001 0.01 0.1 1
0
2000
4000
6000
8000
1 10
104
105
106
0 25 50 75 100 125 150
0
100
200
300
400
0 25 50 75 100 125 1500 100 200 300
0
100
200
300
400
0 25 50 75 100 125 1500 200 400 600
0
500
1000
1500
2000
80 % VRRM
TVJ = 45°C
50 Hz
TVJ = 130°C
TVJ = 45°C
TVJ = 130°C
180° sin
120°
60°
30°
DC
TC [°C]
ITAVM
IFAVM
[A]
t [ms]
I2dt
[A2s]
t [s]
ITSM
IFSM
[A]
ITAM/FAM [A] TA [°C]
Ptot
[W] 180° sin
120°
60°
30°
DC
Ptot
[W]
IdAM [A] TA [°C]
Circuit
B6
3xMCD225
3xMCC225
0.2
0.15
RthKA K/W
0.3
0.03
0.05
0.08
0.1
RthKA K/W
0.1
0.2
0.3
0.4
0.6
0.8
1.0
Fig. 3 Surge overload current
ITSM/FSM: Crest value, t: duration
Fig. 4 I2dt versus time Fig. 4a Max. forward current
at case temperature
Fig. 5 Power dissipation versus on-state current and
ambient temperature (per thyristor or diode)
Fig. 6 Three phase rectifier bridge: Power dissipation versus direct
output current and ambient temperature
© 2013 IXYS All rights reserved 5 - 5
MCC 225
MCD 225
IXYS reserves the right to change limits, test conditions and dimensions. 20130813c
t [s]
10-3 10-2 10-1 100101102
0.00
0.05
0.10
0.15
0.20
0.25
0.30
ZthJC
[K/W]
0 25 50 75 100 125 1500 100 200 300 400
0
500
1000
1500
2000
10-3 10-2 10-1 100101102
0.00
0.05
0.10
0.15
0.20
0.25
Circuit
W3
3xMCD225
3xMCC225 or
IRMS [A] TA [°C]
Ptot
[W]
0.2
0.15
0.1
RthKA K/W
0.3
0.03
0.05
0.08
DC
180°
120°
60°
30°
t [s]
ZthJK
[K/W]
DC
180°
120°
60°
30°
Fig. 7 Three phase AC-controller: Power dissipation versus
RMS output current and ambient temperature
Fig. 8 Transient thermal impedance junction to case (per thyristor/diode)
Fig. 9 Transient thermal impedance junction to heatsink (per thyristor/diode)
RthJC for various conduct. angles d:
d RthJC (K/W)
DC 0.157
180° 0.168
120° 0.177
60° 0.200
30° 0.243
Constants for ZthJC calculation:
i Rthi (K/W) ti (s)
1 0.0076 0.00054
2 0.0406 0.098
3 0.0944 0.54
4 0.0147 12
RthJK for various conduct. angles d:
d RthJK (K/W)
DC 0.197
180° 0.208
120° 0.217
60° 0.240
30° 0.283
Constants for ZthJK calculation:
i Rthi (K/W) ti (s)
1 0.0076 0.00054
2 0.0406 0.0980
3 0.0944 0.540
4 0.0147 1200
5 0.0400 12
