BC856ALT1G Series, SBC856ALT1G Series General Purpose Transistors PNP Silicon http://onsemi.com Features * AEC-Q101 Qualified and PPAP Capable * S and NSV Prefix for Automotive and Other Applications Requiring * Unique Site and Control Change Requirements These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant COLLECTOR 3 1 BASE 2 EMITTER 3 MAXIMUM RATINGS (TA = 25C unless otherwise noted) Rating Symbol Collector-Emitter Voltage BC856, SBC856 BC857, SBC857 BC858, NSVBC858, BC859 VCEO Collector-Base Voltage BC856, SBC856 BC857, SBC857 BC858, NSVBC858, BC859 VCBO Emitter-Base Voltage VEBO -5.0 V IC -100 mAdc Characteristic Symbol Max Unit Total Device Dissipation FR- 5 Board, (Note 1) TA = 25C Derate above 25C PD 225 1.8 mW mW/C 556 C/W Collector Current - Continuous Value Unit 1 V 2 -65 -45 -30 SOT-23 (TO-236AB) CASE 318 STYLE 6 V -80 -50 -30 MARKING DIAGRAM xx M G G THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient Total Device Dissipation Alumina Substrate, (Note 2) TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient Junction and Storage Temperature RqJA PD RqJA TJ, Tstg 300 2.4 mW mW/C 417 C/W -55 to +150 C 1 xx M G = Device Code xx = (Refer to page 6) = Date Code* = Pb-Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet. Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR-5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in 99.5% alumina. (c) Semiconductor Components Industries, LLC, 2011 November, 2011 - Rev. 12 1 Publication Order Number: BC856ALT1/D BC856ALT1G Series, SBC856ALT1G Series ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Symbol Min Typ Max Unit BC856, SBC856 Series BC857, SBC857 Series BC858, NSBVC858 BC859 Series V(BR)CEO -65 -45 -30 - - - - - - V Collector -Emitter Breakdown Voltage BC856 S, SBC856eries (IC = -10 mA, VEB = 0) BC857A, SBC857A, BC857B, SBC857B Only BC858, NSVB858, BC859 Series V(BR)CES -80 -50 -30 - - - - - - V Collector -Base Breakdown Voltage (IC = -10 mA) BC856, SBC856 Series BC857, SBC857 Series BC858, NSVBC858, BC859 Series V(BR)CBO -80 -50 -30 - - - - - - V Emitter -Base Breakdown Voltage (IE = -1.0 mA) BC856, SBC856 Series BC857, SBC857 Series BC858, NSVBC858, BC859 Series V(BR)EBO -5.0 -5.0 -5.0 - - - - - - V ICBO - - - - -15 -4.0 nA mA hFE - - 90 150 - - - - 270 - 125 180 250 220 290 475 420 520 800 - - - - -0.3 -0.65 - - -0.7 -0.9 - - -0.6 - - - -0.75 -0.82 fT 100 - - MHz Output Capacitance (VCB = -10 V, f = 1.0 MHz) Cob - - 4.5 pF Noise Figure (IC = -0.2 mA, VCE = -5.0 Vdc, RS = 2.0 kW, f = 1.0 kHz, BW = 200 Hz) BC856, SBC856, BC857, SBC857, BC858, NSVBC858 Series BC859 Series NF Characteristic OFF CHARACTERISTICS Collector -Emitter Breakdown Voltage (IC = -10 mA) Collector Cutoff Current (VCB = -30 V) Collector Cutoff Current (VCB = -30 V, TA = 150C) ON CHARACTERISTICS DC Current Gain BC856A, SBC856A, BC857A, SBC857A, BC858A (IC = -10 mA, VCE = -5.0 V) BC856B, SBC856B, BC857B, SBC857B, BC858B, NSVBC858B BC857C, SBC857C BC858C (IC = -2.0 mA, VCE = -5.0 V) BC856A, SBC856A, BC857A, SBC857A, BC858A BC856B, SBC856B, BC857B, SBC857B, BC858B, NSVBC858B, BC859B BC857C, SBC857C, BC858C, BC859C Collector -Emitter Saturation Voltage (IC = -10 mA, IB = -0.5 mA) (IC = -100 mA, IB = -5.0 mA) VCE(sat) Base -Emitter Saturation Voltage (IC = -10 mA, IB = -0.5 mA) (IC = -100 mA, IB = -5.0 mA) VBE(sat) Base -Emitter On Voltage (IC = -2.0 mA, VCE = -5.0 V) (IC = -10 mA, VCE = -5.0 V) VBE(on) V V V SMALL-SIGNAL CHARACTERISTICS Current -Gain - Bandwidth Product (IC = -10 mA, VCE = -5.0 Vdc, f = 100 MHz) http://onsemi.com 2 dB - - - - 10 4.0 BC856ALT1G Series, SBC856ALT1G Series BC857/BC858/BC859/SBC857/NSVBC858 -1.0 1.5 TA = 25C -0.9 VCE = -10 V TA = 25C VBE(sat) @ IC/IB = 10 -0.8 V, VOLTAGE (VOLTS) hFE , NORMALIZED DC CURRENT GAIN 2.0 1.0 0.7 0.5 -0.7 VBE(on) @ VCE = -10 V -0.6 -0.5 -0.4 -0.3 -0.2 0.3 VCE(sat) @ IC/IB = 10 -0.1 0.2 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 IC, COLLECTOR CURRENT (mAdc) 0 -0.1 -0.2 -100 -200 Figure 1. Normalized DC Current Gain 1.0 VB , TEMPERATURE COEFFICIENT (mV/ C) VCE , COLLECTOR-EMITTER VOLTAGE (V) TA = 25C -1.6 -1.2 IC = -10 mA IC = -50 mA IC = -200 mA IC = -100 mA IC = -20 mA -0.4 0 -0.02 -55C to +125C 1.2 1.6 2.0 2.4 2.8 -10 -20 -0.1 -1.0 IB, BASE CURRENT (mA) -0.2 10 Cib 7.0 TA = 25C 5.0 Cob 3.0 2.0 1.0 -0.4 -0.6 -1.0 -2.0 -4.0 -6.0 -10 -10 -1.0 IC, COLLECTOR CURRENT (mA) -100 Figure 4. Base-Emitter Temperature Coefficient f, T CURRENT-GAIN - BANDWIDTH PRODUCT (MHz) Figure 3. Collector Saturation Region C, CAPACITANCE (pF) -100 -50 Figure 2. "Saturation" and "On" Voltages -2.0 -0.8 -0.5 -1.0 -2.0 -5.0 -10 -20 IC, COLLECTOR CURRENT (mAdc) -20 -30 -40 400 300 200 150 VCE = -10 V TA = 25C 100 80 60 40 30 20 -0.5 -1.0 -2.0 -3.0 -5.0 -10 -20 -30 -50 VR, REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mAdc) Figure 5. Capacitances Figure 6. Current-Gain - Bandwidth Product http://onsemi.com 3 BC856ALT1G Series, SBC856ALT1G Series BC856/SBC856 TJ = 25C VCE = -5.0 V TA = 25C -0.8 V, VOLTAGE (VOLTS) hFE , DC CURRENT GAIN (NORMALIZED) -1.0 2.0 1.0 0.5 VBE(sat) @ IC/IB = 10 -0.6 VBE @ VCE = -5.0 V -0.4 -0.2 0.2 VCE(sat) @ IC/IB = 10 0 -0.2 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 IC, COLLECTOR CURRENT (mA) -0.1 -0.2 -0.5 -50 -100 -200 -5.0 -10 -20 -1.0 -2.0 IC, COLLECTOR CURRENT (mA) Figure 8. "On" Voltage -2.0 -1.0 -1.6 -1.2 IC = -10 mA -20 mA -50 mA -100 mA -200 mA -0.8 -0.4 TJ = 25C 0 -0.02 -0.05 -0.1 -0.2 -0.5 -1.0 -2.0 IB, BASE CURRENT (mA) -5.0 -10 VB, TEMPERATURE COEFFICIENT (mV/ C) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 7. DC Current Gain -20 -1.4 -1.8 -2.6 -3.0 -0.2 f, T CURRENT-GAIN - BANDWIDTH PRODUCT C, CAPACITANCE (pF) TJ = 25C Cib 10 8.0 Cob 4.0 2.0 -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 VR, REVERSE VOLTAGE (VOLTS) -0.5 -1.0 -50 -2.0 -5.0 -10 -20 IC, COLLECTOR CURRENT (mA) -100 -200 Figure 10. Base-Emitter Temperature Coefficient 40 6.0 -55C to 125C -2.2 Figure 9. Collector Saturation Region 20 qVB for VBE VCE = -5.0 V 500 200 100 50 20 -100 -1.0 -10 IC, COLLECTOR CURRENT (mA) -50 -100 Figure 11. Capacitance Figure 12. Current-Gain - Bandwidth Product http://onsemi.com 4 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) BC856ALT1G Series, SBC856ALT1G Series 1.0 0.7 0.5 D = 0.5 0.2 0.3 0.2 0.1 0.05 SINGLE PULSE 0.1 0.07 0.05 SINGLE PULSE t1 t2 0.03 DUTY CYCLE, D = t1/t2 0.02 0.01 0.1 ZqJC(t) = r(t) RqJC RqJC = 83.3C/W MAX ZqJA(t) = r(t) RqJA RqJA = 200C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) RqJC(t) P(pk) 0.2 0.5 1.0 2.0 10 5.0 20 t, TIME (ms) 50 100 200 500 1.0k 2.0k 5.0k 10k Figure 13. Thermal Response The safe operating area curves indicate IC-VCE limits of the transistor that must be observed for reliable operation. Collector load lines for specific circuits must fall below the limits indicated by the applicable curve. The data of Figure 14 is based upon TJ(pk) = 150C; TC or TA is variable depending upon conditions. Pulse curves are valid for duty cycles to 10% provided TJ(pk) 150C. TJ(pk) may be calculated from the data in Figure 13. At high case or ambient temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by the secondary breakdown. -200 IC, COLLECTOR CURRENT (mA) 1s 3 ms -100 -50 -10 -5.0 -2.0 -1.0 TA = 25C TJ = 25C BC558, BC559 BC557 BC556 BONDING WIRE LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT -5.0 -10 -30 -45 -65 -100 VCE, COLLECTOR-EMITTER VOLTAGE (V) Figure 14. Active Region Safe Operating Area http://onsemi.com 5 BC856ALT1G Series, SBC856ALT1G Series ORDERING INFORMATION Device Marking BC856ALT1G SBC856ALT1G 3A Package Shipping SOT-23 (Pb-Free) 3,000 / Tape & Reel BC856ALT3G 10,000 / Tape & Reel SOT-23 (Pb-Free) BC856BLT1G SBC856BLT1G BC856BLT3G 3B 10,000 / Tape & Reel SBC856BLT3G BC857ALT1G SBC857ALT1G 3E BC857BLT1G SBC857BLT1G 3F SOT-23 (Pb-Free) 3,000 / Tape & Reel SOT-23 (Pb-Free) 3,000 / Tape & Reel BC857BLT3G 10,000 / Tape & Reel SOT-23 (Pb-Free) BC857CLT1G SBC857CLT1G 3G BC857CLT3G BC858ALT1G BC858BLT1G NSVBC858BLT1G 3,000 / Tape & Reel 3,000 / Tape & Reel 10,000 / Tape & Reel SOT-23 (Pb-Free) 3J SOT-23 (Pb-Free) 3K BC858BLT3G 3,000 / Tape & Reel SOT-23 (Pb-Free) 10,000 / Tape & Reel SOT-23 (Pb-Free) 3,000 / Tape & Reel BC858CLT3G SOT-23 (Pb-Free) 10,000 / Tape & Reel BC859BLT1G SOT-23 (Pb-Free) 3,000 / Tape & Reel SOT-23 (Pb-Free) 10,000 / Tape & Reel SOT-23 (Pb-Free) 3,000 / Tape & Reel SOT-23 (Pb-Free) 10,000 / Tape & Reel BC858CLT1G BC859BLT3G 3L 4B BC859CLT1G BC859CLT3G 4C For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 6 BC856ALT1G Series, SBC856ALT1G Series PACKAGE DIMENSIONS SOT-23 (TO-236) CASE 318-08 ISSUE AP NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. D SEE VIEW C 3 HE E DIM A A1 b c D E e L L1 HE q c 1 2 e b 0.25 q A L A1 MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 0 MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 --- 10 MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 0 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 --- MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 10 STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR L1 VIEW C SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 SCALE 10:1 0.8 0.031 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5817-1050 http://onsemi.com 7 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative BC856ALT/D