© Semiconductor Components Industries, LLC, 2011
November, 2011 Rev. 12
Publication Order Number:
BC856ALT1/D
1
BC856ALT1G Series,
SBC856ALT1G Series
General Purpose
Transistors
PNP Silicon
Features
AECQ101 Qualified and PPAP Capable
S and NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating Symbol Value Unit
Collector-Emitter Voltage
BC856, SBC856
BC857, SBC857
BC858, NSVBC858, BC859
VCEO
65
45
30
V
Collector-Base Voltage
BC856, SBC856
BC857, SBC857
BC858, NSVBC858, BC859
VCBO
80
50
30
V
EmitterBase Voltage VEBO 5.0 V
Collector Current Continuous IC100 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR5 Board,
(Note 1) TA = 25°C
Derate above 25°C
PD
225
1.8
mW
mW/°C
Thermal Resistance,
JunctiontoAmbient
RqJA 556 °C/W
Total Device Dissipation Alumina
Substrate, (Note 2) TA = 25°C
Derate above 25°C
PD
300
2.4
mW
mW/°C
Thermal Resistance,
JunctiontoAmbient
RqJA 417 °C/W
Junction and Storage Temperature TJ, Tstg 55 to +150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in 99.5% alumina.
SOT23 (TO236AB)
CASE 318
STYLE 6
1
2
3
COLLECTOR
3
1
BASE
2
EMITTER
http://onsemi.com
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
ORDERING INFORMATION
MARKING DIAGRAM
xx M G
G
xx = Device Code
xx = (Refer to page 6)
M = Date Code*
G=PbFree Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
1
BC856ALT1G Series, SBC856ALT1G Series
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage BC856, SBC856 Series
(IC = 10 mA) BC857, SBC857 Series
BC858, NSBVC858 BC859 Series
V(BR)CEO 65
45
30
V
CollectorEmitter Breakdown Voltage BC856 S, SBC856eries
(IC = 10 mA, VEB = 0) BC857A, SBC857A, BC857B, SBC857B Only
BC858, NSVB858, BC859 Series
V(BR)CES 80
50
30
V
CollectorBase Breakdown Voltage BC856, SBC856 Series
(IC = 10 mA) BC857, SBC857 Series
BC858, NSVBC858, BC859 Series
V(BR)CBO 80
50
30
V
EmitterBase Breakdown Voltage BC856, SBC856 Series
(IE = 1.0 mA) BC857, SBC857 Series
BC858, NSVBC858, BC859 Series
V(BR)EBO 5.0
5.0
5.0
V
Collector Cutoff Current (VCB = 30 V)
Collector Cutoff Current (VCB = 30 V, TA = 150°C)
ICBO
15
4.0
nA
mA
ON CHARACTERISTICS
DC Current Gain BC856A, SBC856A, BC857A, SBC857A, BC858A
(IC = 10 mA, VCE = 5.0 V) BC856B, SBC856B, BC857B, SBC857B,
BC858B, NSVBC858B
BC857C, SBC857C BC858C
(IC = 2.0 mA, VCE = 5.0 V) BC856A, SBC856A, BC857A,
SBC857A, BC858A
BC856B, SBC856B, BC857B, SBC857B, BC858B,
NSVBC858B, BC859B
BC857C, SBC857C, BC858C, BC859C
hFE
125
220
420
90
150
270
180
290
520
250
475
800
CollectorEmitter Saturation Voltage
(IC = 10 mA, IB = 0.5 mA)
(IC = 100 mA, IB = 5.0 mA)
VCE(sat)
0.3
0.65
V
Base Emitter Saturation Voltage
(IC = 10 mA, IB = 0.5 mA)
(IC = 100 mA, IB = 5.0 mA)
VBE(sat)
0.7
0.9
V
Base Emitter On Voltage
(IC = 2.0 mA, VCE = 5.0 V)
(IC = 10 mA, VCE = 5.0 V)
VBE(on)
0.6
0.75
0.82
V
SMALLSIGNAL CHARACTERISTICS
CurrentGain Bandwidth Product
(IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz)
fT100 MHz
Output Capacitance
(VCB = 10 V, f = 1.0 MHz)
Cob 4.5 pF
Noise Figure
(IC = 0.2 mA, VCE = 5.0 Vdc, RS = 2.0 kW, f = 1.0 kHz, BW = 200 Hz)
BC856, SBC856, BC857, SBC857, BC858, NSVBC858 Series
BC859 Series
NF
10
4.0
dB
BC856ALT1G Series, SBC856ALT1G Series
http://onsemi.com
3
BC857/BC858/BC859/SBC857/NSVBC858
Figure 1. Normalized DC Current Gain
IC, COLLECTOR CURRENT (mAdc)
2.0
Figure 2. “Saturation” and “On” Voltages
IC, COLLECTOR CURRENT (mAdc)
-0.2
0.2
Figure 3. Collector Saturation Region
IB, BASE CURRENT (mA)
Figure 4. BaseEmitter Temperature Coefficient
IC, COLLECTOR CURRENT (mA)
-0.6
-0.7
-0.8
-0.9
-1.0
-0.5
0
-0.2
-0.4
-0.1
-0.3
1.6
1.2
2.0
2.8
2.4
-1.2
-1.6
-2.0
-0.02 -1.0 -10
0-20
-0.1
-0.4
-0.8
hFE, NORMALIZED DC CURRENT GAIN
V, VOLTAGE (VOLTS)
VCE, COLLECTOR-EMITTER VOLTAGE (V)
VB, TEMPERATURE COEFFICIENT (mV/ C)°θ
1.5
1.0
0.7
0.5
0.3
-0.2 -10 -100
-1.0
TA = 25°C
VBE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
VBE(on) @ VCE = -10 V
VCE = -10 V
TA = 25°C
-55°C to +125°C
IC = -100 mA
IC = -20 mA
-0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100
IC = -200 mAIC = -50 mAIC =
-10 mA
Figure 5. Capacitances
VR, REVERSE VOLTAGE (VOLTS)
10
Figure 6. CurrentGain Bandwidth Product
IC, COLLECTOR CURRENT (mAdc)
-0.4
1.0
80
100
200
300
400
60
20
40
30
7.0
5.0
3.0
2.0
-0.5
C, CAPACITANCE (pF)
f, CURRENT-GAIN - BANDWIDTH PRODUCT (MHz)
T
TA = 25°C
Cob
Cib
-0.6 -1.0 -2.0 -4.0 -6.0 -10 -20 -30 -40
150
-1.0 -2.0 -3.0 -5.0 -10 -20 -30 -50
VCE = -10 V
TA = 25°C
TA = 25°C
1.0
BC856ALT1G Series, SBC856ALT1G Series
http://onsemi.com
4
BC856/SBC856
Figure 7. DC Current Gain
IC, COLLECTOR CURRENT (mA)
Figure 8. “On” Voltage
IC, COLLECTOR CURRENT (mA)
-0.8
-1.0
-0.6
-0.2
-0.4
1.0
2.0
-0.1 -1.0 -10 -200
-0.2
0.2
0.5
-0.2 -1.0 -10 -200
TJ = 25°C
VBE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
VBE @ VCE = -5.0 V
Figure 9. Collector Saturation Region
IB, BASE CURRENT (mA)
Figure 10. BaseEmitter Temperature Coefficient
IC, COLLECTOR CURRENT (mA)
-1.0
-1.2
-1.6
-2.0
-0.02 -1.0 -10
0-20
-0.1
-0.4
-0.8
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
VB, TEMPERATURE COEFFICIENT (mV/ C)°θ
-0.2 -2.0 -10 -200
-1.0
TJ = 25°C
IC =
-10 mA
hFE, DC CURRENT GAIN (NORMALIZED)
V, VOLTAGE (VOLTS)
VCE = -5.0 V
TA = 25°C
0-0.5 -2.0 -5.0 -20 -50 -100
-0.05 -0.2 -0.5 -2.0 -5.0
-100 mA
-20 mA
-1.4
-1.8
-2.2
-2.6
-3.0
-0.5 -5.0 -20 -50 -100
-55°C to 125°C
qVB for VBE
-2.0 -5.0 -20 -50 -100
Figure 11. Capacitance
VR, REVERSE VOLTAGE (VOLTS)
40
Figure 12. CurrentGain Bandwidth Product
IC, COLLECTOR CURRENT (mA)
-0.1 -0.2 -1.0 -50
2.0 -2.0 -10 -100
100
200
500
50
20
20
10
6.0
4.0
-1.0 -10 -100
VCE = -5.0 V
C, CAPACITANCE (pF)
f, CURRENT-GAIN - BANDWIDTH PRODUCT
T
-0.5 -5.0 -20
TJ = 25°C
Cob
Cib
8.0
-50 mA -200 mA
BC856ALT1G Series, SBC856ALT1G Series
http://onsemi.com
5
Figure 13. Thermal Response
t, TIME (ms)
1.0
r(t), TRANSIENT THERMAL
2.0 5.01.00.50.20.1
RESISTANCE (NORMALIZED)
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.01
20 5010 200 500100 1.0k 2.0k 5.0k 10k
Figure 14. Active Region Safe Operating Area
VCE, COLLECTOR-EMITTER VOLTAGE (V)
-200
-1.0
IC, COLLECTOR CURRENT (mA)
TA = 25°C
D = 0.5
0.2
0.1 0.05 SINGLE PULSE
SINGLE PULSE
BONDING WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
3 ms
TJ = 25°C
ZqJC(t) = r(t) RqJC
RqJC = 83.3°C/W MAX
ZqJA(t) = r(t) RqJA
RqJA = 200°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) RqJC(t)
t1
t2
P(pk)
DUTY CYCLE, D = t1/t2
-100
-50
-10
-5.0
-2.0
-5.0 -10 -30 -45 -65 -100
1 s
BC558, BC559
BC557
BC556
The safe operating area curves indicate ICVCE limits of
the transistor that must be observed for reliable operation.
Collector load lines for specific circuits must fall below the
limits indicated by the applicable curve.
The data of Figure 14 is based upon TJ(pk) = 150°C; TC or
TA is variable depending upon conditions. Pulse curves are
valid for duty cycles to 10% provided TJ(pk) 150°C. TJ(pk)
may be calculated from the data in Figure 13. At high case or
ambient temperatures, thermal limitations will reduce the
power that can be handled to values less than the limitations
imposed by the secondary breakdown.
BC856ALT1G Series, SBC856ALT1G Series
http://onsemi.com
6
ORDERING INFORMATION
Device Marking Package Shipping
BC856ALT1G
3A
SOT23
(PbFree) 3,000 / Tape & Reel
SBC856ALT1G
BC856ALT3G 10,000 / Tape & Reel
BC856BLT1G
3B
SOT23
(PbFree) 3,000 / Tape & Reel
SBC856BLT1G
BC856BLT3G
10,000 / Tape & Reel
SBC856BLT3G
BC857ALT1G
3E
SOT23
(PbFree) 3,000 / Tape & Reel
SBC857ALT1G
BC857BLT1G
3F
SOT23
(PbFree) 3,000 / Tape & Reel
SBC857BLT1G
BC857BLT3G 10,000 / Tape & Reel
BC857CLT1G
3G
SOT23
(PbFree) 3,000 / Tape & Reel
SBC857CLT1G
BC857CLT3G 10,000 / Tape & Reel
BC858ALT1G 3J SOT23
(PbFree)
3,000 / Tape & Reel
BC858BLT1G
3K
SOT23
(PbFree)
NSVBC858BLT1G
BC858BLT3G
3L
SOT23
(PbFree) 10,000 / Tape & Reel
BC858CLT1G SOT23
(PbFree) 3,000 / Tape & Reel
BC858CLT3G SOT23
(PbFree) 10,000 / Tape & Reel
BC859BLT1G
4B
SOT23
(PbFree) 3,000 / Tape & Reel
BC859BLT3G SOT23
(PbFree) 10,000 / Tape & Reel
BC859CLT1G
4C
SOT23
(PbFree) 3,000 / Tape & Reel
BC859CLT3G SOT23
(PbFree) 10,000 / Tape & Reel
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
BC856ALT1G Series, SBC856ALT1G Series
http://onsemi.com
7
PACKAGE DIMENSIONS
SOT23 (TO236)
CASE 31808
ISSUE AP
D
A1
3
12
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
ǒmm
inchesǓ
SCALE 10:1
0.8
0.031
0.9
0.035
0.95
0.037
0.95
0.037
2.0
0.079
VIEW C
L
0.25
L1
q
e
EE
b
A
SEE VIEW C
DIM
A
MIN NOM MAX MIN
MILLIMETERS
0.89 1.00 1.11 0.035
INCHES
A1 0.01 0.06 0.10 0.001
b0.37 0.44 0.50 0.015
c0.09 0.13 0.18 0.003
D2.80 2.90 3.04 0.110
E1.20 1.30 1.40 0.047
e1.78 1.90 2.04 0.070
L0.10 0.20 0.30 0.004
0.040 0.044
0.002 0.004
0.018 0.020
0.005 0.007
0.114 0.120
0.051 0.055
0.075 0.081
0.008 0.012
NOM MAX
L1
H
2.10 2.40 2.64 0.083 0.094 0.104
HE
0.35 0.54 0.69 0.014 0.021 0.029
c
0−−− 10 0 −−− 10
q°°°°
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
*For additional information on our PbFree strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
N. American Technical Support: 8002829855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81358171050
BC856ALT/D
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 3036752175 or 8003443860 Toll Free USA/Canada
Fax: 3036752176 or 8003443867 Toll Free USA/Canada
Email: orderlit@onsemi.com
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative