2A DDR TERMINATION REGULATOR AP2302L
Preliminary Datasheet
1
Nov. 2005 Rev. 1. 1 BCD Semiconductor Manufacturing Limited
Figure 1. Package Types of AP2302L
General Description
The AP2302L linear regulator is designed to meet the
JEDEC specification SSTL-2 and SSTL-18 for termi-
nation of DDR-SDRAM. The regulator can sink or
source up to 2A current continuously, providing
enough current for most DDR applications. VOUT is
designed to track the VREF voltage within a ± 20mV
tolerance over the entire current range while prevent-
ing shooting through on the output stage. On-chip ther-
mal limiting provides protection against a combin ation
of high current and ambient temperature which would
create an excessive junction temperature.
The AP2302L, used in conjunction with series termi-
nation resistors, provides an excellent voltage source
for active termination schemes of hig h speed tran smis-
sion lines as those seen in high speed memory buses
and distributed backplane designs.
The AP2302L is available in SOIC-8 and TO-252-5
packages.
Features
·Support Both DDR I (1.25VTT) and DDR II
(0.9VTT) Requirements
·Source and Sink Current up to 2A
·High Accuracy Output Voltage at Full-load
·Adjustable VOUT by External Resistors
·Shutdown for Standby or Suspend Mode
Operation with High-impedance Output
Applications
·DDR-SDRAM Termination
·DDR-II Termination
·SSTL-2 Te rm ination
SOIC-8 TO-252-5
2A DDR TERMINATION REGULATOR AP2302L
Preliminary Datasheet
2
Nov. 2005 Rev. 1. 1 BCD Semiconductor Manufacturing Limited
Pin Description
Pin Number Pin Name Function
SOIC-8 TO-252-5
11 VIN Power Input.
2 2 GND Ground.
3 4 REFEN Reference Voltage Input and Chip Enable.
45VOUT Output Voltage.
5, 6, 7, 8 3 VCNTL Supply Voltage for Internal Circuit (Internally Connected for SOIC-8),
(TAB for TO-252-5).
Pin Configuration
Figure 2. Pin Configuration of AP2302L (Top View)
M Package
7 VCNTL
6 VCNTL
5 VCNTL
1
2
3
4
VIN
GND REFEN
VOUT
(SOIC-8) (TO-252-5)
D Package
VIN
GND
VCNTL (TAB)
REFEN
VOUT
8 VCNTL
1
2
3
4
5
2A DDR TERMINATION REGULATOR AP2302L
Preliminary Datasheet
3
Nov. 2005 Rev. 1. 1 BCD Semiconductor Manufacturing Limited
Functional Block Diagram
Figure 3. Functional Bloc k Diagram of AP2302L
Package Temperature
Range
Part Number Marking ID Packing
Type
Tin Lead Lead Free Tin Lead Lead Free
SOIC-8 0 to 125oCAP2302LM-E1 2302LM-E1 Tube
AP2302LMTR-E1 2302LM-E1 Tape ＆Reel
TO-252-5 0 to 125oCAP2302LD-E1 AP2302LD-E1 Tube
AP2302LDTR-E1 AP2302LD-E1 Tape ＆Reel
Ordering Information
BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant.
Circuit Type
Package
BANDGAP
START UP
CURRENT
LIMIT
THERMAL
PROTECT
OUTPUT
CONTROL
REFEN
VIN
VCNTL(TAB)
GND
VOUT
1 (1)
2 (2)
5,6,7, 8 (3 )
3 (4) 4 (5)
A(B)
A for SOIC-8
B for TO-252-5
M: SOIC-8
D: TO-252-5
AP2302L -
E1: Lead Free
Blank: Tin Lead
TR: Tape and Reel
Blank: Tube
2A DDR TERMINATION REGULATOR AP2302L
Preliminary Datasheet
4
Nov. 2005 Rev. 1. 1 BCD Semiconductor Manufacturing Limited
Absolute Maximum Ratings (Note 1)
Recommended Operating Conditions
Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device.
These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated
under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods
may affect device reliability.
Parameter Symbol Value Unit
Supply Voltage for Internal Circuit VCNTL 7V
Power Dissipation PDInternally Limited W
ESD (Human Body Model) ESD 2 KV
Stora ge Temperature Range TSTG -65 to 150 oC
Lead Temperature (Solderi ng, 5sec) TLEAD 260 oC
Package Thermal Resistance (Free Air) θJC
SOIC-8 28 oC/W
TO-252-5 13
Parameter Symbol Min Typ Max Unit
Supply Voltage for Internal Circuit VCNTL (Note 2, 3) 3.36V
Power Input DDR I VIN 1.6 2.5 VCNTL V
DDR II 1.8
Junction Temperature TJ0 125 oC
Note 2: Keep VCNTL ≥VIN in operation power on and power off sequences.
Note 3: For safe operation, VCNTL MUST be tied to 3.3V rather than 5V.
2A DDR TERMINATION REGULATOR AP2302L
Preliminary Datasheet
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Nov. 2005 Rev. 1. 1 BCD Semiconductor Manufacturing Limited
Parameter Symbol Conditions M in Typ Max Unit
Output Of fs et Voltage VOS ΙL=0Α (Note 4) -20 0 20 mV
Load
Regulation
DDR I
∆VOUT
IL=0 to 2A -20 0 20 mV
IL=0 to -2A
DDR II IL=0 to 2A -20 0 20
IL=0 to -2A
Quiescent Current of V CNTL IQNo Load 3 5 mA
Leakage Current in S hutdown Mode ISHDN VREFEN<0.2V, RL=180Ω36
µA
Protection
Current Limit ILIMIT 2.6 A
Thermal Shutdown Temperature TSHDN 3.3V ≤VCNTL ≤5V 150 oC
Thermal Shutdown Hysteresis 50 oC
Shutdown Function
Shutdown Threshold Trigger Output=High 0.8 V
Output=Low 0.2
Electrical Characteristics
(TA=25oC, VIN=2.5V, VCNTL=3.3V, VREFEN=1.25V, COUT=10µF (Ceramic), unless otherwise specified.)
Note 4: VOS is the voltage measurement defined as VOUT subtracted from VREFEN.
2A DDR TERMINATION REGULATOR AP2302L
Preliminary Datasheet
6
Nov. 2005 Rev. 1. 1 BCD Semiconductor Manufacturing Limited
-40-200 20406080100120
2
4
6
VCNTL=3.3V
VIN=2.5V
VOUT=1.25V
Sourcing Current (A)
Ambient Temperature (oC)
Typical Performance Characteristics
Figure 6. Threshold Voltage vs. Ambient Temperature Figure 7. Threshold Voltage vs. Ambient Temperature
Figure 4. Sourcing Current vs. Ambient Temperature Figure 5. Sinki n g C urrent vs. Ambient Temperature
-40-200 20406080100120
2
4
6
VCNTL=3.3V
VIN=2.5V
VOUT=1.25V
Sinking Current (A)
Ambient Temperature (oC)
-40-200 20406080100120
500
550
600
650
VCNTL=3.3V
VIN=2.5V
Threshold Voltage (mV)
Ambient Temperature (oC)
-40-200 20406080100120
500
550
600
650
VCNTL=5.0V
VIN=2.5V
Threshold Voltage (mV)
Ambient Temperature (oC)
2A DDR TERMINATION REGULATOR AP2302L
Preliminary Datasheet
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Nov. 2005 Rev. 1. 1 BCD Semiconductor Manufacturing Limited
25 50 75 100 125
0.16
0.18
0.20
0.22
0.24
0.26
0.28
0.30
VCNTL=5V
VREFEN=1.0V
RDS(ON) ( )
Ambient Temperature (oC)
VIN=0.9V
VIN=0.85V
VIN=0.8V
25 50 75 100 125
0.16
0.18
0.20
0.22
0.24
0.26
0.28
0.30
VCNTL=3.3V
VREFEN=1.0V
RDS(ON) ( )
Ambient Temperature (oC)
VIN=0.9V
VIN=0.85V
VIN=0.8V
Typical Performance Characteristics (Continued)
Figure 10. RDS(on) vs. Ambient Temperature Figure 11. RDS(on) vs. Ambient Temperature
Figure 8. 0.9VTT at 2A Transient Response Figure 9. 1.25VTT at 2A Tra nsient Response
Time (
µ
s) Time (
µ
s)
Ω
Ω
Output Transient
Voltage
20mV
-20mV
2A
-2A
20mV
-20mV
2A
-2A
Output Transient
Voltage
Output Current
Output Current
2A DDR TERMINATION REGULATOR AP2302L
Preliminary Datasheet
8
Nov. 2005 Rev. 1. 1 BCD Semiconductor Manufacturing Limited
Typical Performance Characteristics (Continued)
Figure 12. Copper Area vs. Power Dissipation
4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0
100
150
200
250
300
350
Copper Area (mm2)
Power Dissipation (W)
TA=25oC
TA=50oC
TA=65oC
(For SOIC-8) Figure 13. Copper Area vs. Power Dissipation
6.06.57.07.58.08.59.09.510.0
100
150
200
250
300
350
Copper Area (mm2)
Power Dissipation (W)
TA=25oC
TA=50oC
TA=65oC
(For TO-252-5)
2A DDR TERMINATION REGULATOR AP2302L
Preliminary Datasheet
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Nov. 2005 Rev. 1. 1 BCD Semiconductor Manufacturing Limited
Typical Application
Figure 14. Typical Application of AP2302L
R1 = R2 = 100KΩ, RTT = 50Ω / 33Ω / 25Ω
RDUMMY = 1KΩ, as for VOUT discharge when VIN is not present but VCNTL is present
CSS = 1µF, CIN = 470µF, CCNTL = 47µF, COUT =470µF
VIN VCNTL
REFEN AP2302L VOUT
GND
RTT
RDUMMY
COUT
VCNTL= 3.3V
EN
R1
R2CSS
CCNTL
CIN
VIN = 2.5V
2A DDR TERMINATION REGULATOR AP2302L
Preliminary Datasheet
10
Nov. 2005 Rev. 1. 1 BCD Semiconductor Manufacturing Limited
Mechanical Dimensions
SOIC-8 Unit: mm(inch)
0°
8°
1°
5°
R0.150(0.006)
R0.150(0.006)
1.000(0.039)
0.330(0.013)
0.510(0.020)
4.800(0.189)
5.000(0.197) 1.350(0.053)
1.750(0.069)
0.100(0.004)
0.300(0.012)
0.900(0.035)
0.800(0.031)
0.200(0.008)
3.800(0.150)
4.000(0.157)
7°
7°
20:1
D
1.270(0.050)
TYP
0.190(0.007)
0.250(0.010)
8°
D
5.800(0.228)
6.200(0.244)
0.675(0.027)
0.725(0.029)
0.320(0.013)
8°
φ
2A DDR TERMINATION REGULATOR AP2302L
Preliminary Datasheet
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Nov. 2005 Rev. 1. 1 BCD Semiconductor Manufacturing Limited
Mechanical Dimensions (Continued)
9.500(0.374)
9.900(0.390)
5.200(0.205)
5.400(0.213)
6.350(0.250)
6.650(0.262)
0.400(0.016)
0.600(0.024)
1.270(0.050)
TYP
2.540(0.100)
TYP
2.200(0.087)
2.400(0.094)
0.430(0.017)
0.580(0.023)
5.400(0.213)
5.700(0.224)
0.000(0.000)
0.127(0.005)
0.430(0.017)
0.580(0.023)
2.550(0.100)
2.900(0.114)
3.800(0.150)
REF
1.400(0.055)
1.780(0.070)
TO-252-5 Unit: mm(inch)
IMPORTANT NOTICE
BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifi-
cations herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility fo r use of any its products for any
particular purpose, nor does BCD Semiconductor Man ufacturing Limited assume any liability arising out of the application or use
of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or
other rights nor the rights of others.
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Shanghai SIM-BCD Semiconductor Manufacturing Limited
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Tel: +86-21-6485 1491, Fax: +86-21-5450 0008
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