e
1
PTB 20082
15 Watts, 1.8–2.0 GHz
Cellular Radio RF Power Transistor
0
4
8
12
16
20
01234
Input Power (Watts)
Output Power (Watts)
VCC = 26 V
ICQ = 70 mA
f = 2.0 GH z
T
yp
ical Out
p
ut Pow er vs. In
p
ut Power
Package 20209
20082
LOT CODE
Description
The 20082 is a class AB, NPN, common emitter RF power transistor
intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 15 watts
output power, it may be used for both CW and PEP applications. Ion
implantation, nitride surface passivation and gold metallization ensure
excellent device reliability. 100% lot traceability is standard.
10 Watts Linear Power
Output Power at 1 dB Compressed = 15 W
Class AB Characteristics
30% Collector Efficiency at 7.5 Watts
Gold Metallization
Silicon Nitride Passivated
Maximum Ratings
Parameter Symbol Value Unit
Collector-Emitter Voltage VCER 50 Vdc
Collector-Base Voltage VCBO 50 Vdc
Emitter-Base Voltage (collector open) VEBO 4.0 Vdc
Collector Current (continuous) IC1.4 Adc
Total Device Dissipation at Tflange = 25°C PD52 Watts
Above 25°C derate by 0.29 W/°C
Storage Temperature Range TSTG –40 to +150 °C
Thermal Resistance (Tflange = 70°C) RθJC 3.4 °C/W
9/28/98
PTB 20082
2
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Electrical Characteristics (100% Tested)
Characteristic Conditions Symbol Min Typ Max Units
Breakdown Voltage C to E IB = 0 A, IC = 5 mA, RBE = 22 ΩV(BR)CER 50 — — Volts
Breakdown Voltage C to E VBE = 0 V, IC = 5 mA V(BR)CES 50 — — Volts
Breakdown Voltage E to B IC = 0 A, IE = 5 mA V(BR)EBO 4 5 — Volts
DC Current Gain VCE = 5 V, IC = 250 mA hFE 20 — — —
RF Specifications (100% Tested)
Characteristic Symbol Min Typ Max Units
Gain
(VCC = 26 Vdc, POUT = 7.5 W, ICQ = 70 mA, f = 2.0 GHz) Gpe 89—dB
Output Power at 1 dB Compression
(VCC = 26 Vdc, ICQ = 70 mA, f = 2.0 GHz) P-1dB 15 — — Watts
Collector Efficiency
(VCC = 26 Vdc, POUT = 7.5 W, ICQ = 70 mA, f = 2.0 GHz) ηC30 — — %
Load Mismatch Tolerance
(VCC = 26 Vdc, POUT = 7.5 W, ICQ = 70 mA, Ψ— — 5:1 —
f = 2.0 GHz—all phase angles at frequency of test)
Typical Performance
5
6
7
8
9
10
1750 1800 1850 1900 1950 2000 2050
Frequency (MHz)
Gain
10
20
30
40
50
60
Output Power & Efficiency
VCC = 26 V
ICQ = 70 mA
POUT, G ain & Efficiency (a t P-1dB) vs. Frequency
Output Powe r (W)
Efficiency (%)
Gain (dB)
Broadband Test Fixture Performance
4
8
12
16
20
1900 1925 1950 1975 2000
Frequency (MHz)
Gain
0
10
20
30
40
50
60
VCC = 26 V
ICQ = 70 mA
POUT = 7.5 W
Gain (dB)
Return Loss (dB)
Efficiency (%)
Efficiency
Return Los
s
-15
-25
-35
5
/11/98
PTB 20082
3
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Z Source Z Load
Frequency Z Source Z Load
GHz R jX R jX
1.75 5.8 -12.7 9.29 -0.6
1.80 5.8 -11.9 10.15 -0.9
1.85 5.8 -11.4 9.80 -1.3
1.90 5.8 -10.2 9.58 -1.5
1.95 6.0 -8.8 8.83 -1.5
2.00 7.1 -5.9 8.23 -1.3
2.05 7.7 -4.9 8.79 -0.7
Power Gain vs. Out put Power
5
6
7
8
9
10
0.1 1.0 10.0 100.0
Output Power (Watts)
Power Gain (d B)
VCC = 26 V
f = 2.0 GH z
ICQ = 70 m A
ICQ = 35 m A
ICQ = 18 m A
Output Pow er vs. Supply Volt age
10
12
14
16
18
20
22 23 24 25 26 27
Supply Voltage (Volts)
Output Power (Watts)
ICQ = 70 mA
f = 2.0 GH z
-70
-60
-50
-40
-30
-20
1 3 5 7 9 11 13 15
Output Power (Watts-PEP)
IMD (dBc)
VCC = 28 V
ICQ = 40 mA
f1 = 1999.9 MHz
f2 = 2000.0 MHz
Int ermodulat ion Dist ortion vs. O utput Power
Impedance Data
VCC = 26 Vdc, POUT = 7.5 W, ICQ = 70 mA
Z0 = 50 Ω
5
/6/98
PTB 20082
4
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Typical Scattering Parameters
(VCE = 26 V, IC = 0.5 A)
f S11 S21 S12 S22
(MHz) Mag Ang Mag Ang Mag Ang Mag Ang
100 0.855 -176 4.80 82 0.008 -24 0.776 -172
200 0.879 -176 3.55 75 0.007 -27 0.821 -172
300 0.931 -176 1.36 40 0.003 -29 0.911 -174
400 0.961 -178 0.558 22 0.002 31 0.962 -177
500 0.977 -179 0.157 19 0.004 78 0.985 180
600 0.984 180 0.103 145 0.006 84 1.00 177
700 0.989 178 0.263 149 0.009 81 0.998 173
800 0.992 177 0.380 142 0.012 76 0.962 170
900 0.998 176 0.476 134 0.015 72 0.931 168
1000 0.998 175 0.563 125 0.018 66 0.896 166
1100 0.997 173 0.650 116 0.021 60 0.868 165
1200 0.991 172 0.740 107 0.023 54 0.833 164
1300 0.987 170 0.847 98 0.026 50 0.791 162
1400 0.974 168 0.978 87 0.030 44 0.738 161
1500 0.950 165 1.15 75 0.035 35 0.674 161
1600 0.905 163 1.39 59 0.041 24 0.594 164
1700 0.824 160 1.67 39 0.047 7 0.523 173
1800 0.708 163 1.86 12 0.050 -18 0.552 -172
1900 0.659 173 1.83 -17 0.044 -45 0.702 -167
2000 0.731 -178 1.57 -46 0.033 -69 0.839 -171
2100 0.827 -178 1.22 -69 0.023 -91 0.892 -178
2200 0.889 -180 0.919 -85 0.016 -114 0.894 178
Ericsson Components
RF Power Products
675 Jarvis Drive
Morgan Hill, CA 95037 USA
Telephone: 408-778-9434
Specifications subject to change without notice.
L1
© Ericsson Inc. Components AB 1995
EUS/KR 1301-PTB 20082 Uen Rev. D 09-28-98
1-877-GOLDMOS
(1-877-465-3667)
e-mail: rfpower@ericsson.com
www.ericsson.com/rfpower