© 2010 IXYS CORPORATION, All Rights Reserved
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 150°C 250 V
VDGR TJ= 25°C to 150°C, RGS = 1MΩ250 V
VGSM Transient ± 30 V
ID25 TC= 25°C50A
IDM TC= 25°C, Pulse Width Limited by TJM 130 A
IATC= 25°C 5 A
EAS TC= 25°C 1.5 J
PDTC= 25°C 400 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
TL1.6mm (0.062in.) from Case for 10s 300 °C
Plastic Body for 10 s 260 °C
MdMounting Torque (TO-220, TO-3P &TO-247) 1.13 / 10 Nmlb.in.
FCMounting Force (TO-263) 10..65 / 2.2..14.6 N/lb.
Weight TO-263 2.5 g
TO-220 3.0 g
TO-3P 5.5 g
TO-247 6.0 g
Symbol Test Conditions Characteristic Values
(TJ = 25°C Unless Otherwise Specified) Min. Typ . Max.
BVDSS VGS = 0V, ID = 1mA 250 V
VGS(th) VDS = VGS, ID = 1mA 3.0 5.0 V
IGSS VGS = ± 20V, VDS = 0V ± 100 nA
IDSS VDS = VDSS, VGS = 0V 1 μA
TJ = 125°C 150 μA
RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 60 mΩ
Trench Gate
Power MOSFET
N-Channel Enhancement Mode
Features
zAvalanche Rated
zHigh Current Handling Capability
z Fast Intrinsic Rectifier
zLow RDS(on)
Advantages
zHigh Power Density
zEasy to Mount
zSpace Savings
Applications
z
DC-DC Coverters
z
Battery Chargers
zSwitch-Mode and Resonant-Mode
Power Supplies
zDC Choppers
z AC and DC Motor Drives
z
Uninterrupted Power Supplies
z
High Speed Power Switching
Applications
VDSS = 250V
ID25 = 50A
RDS(on) ≤≤
≤≤
≤ 60mΩΩ
ΩΩ
Ω
DS99346B(01/10)
IXTA50N25T IXTQ50N25T
IXTP50N25T IXTH50N25T
GDS
TO-220AB (IXTP)
D (Tab)
TO-263 AA (IXTA)
G
S
D (Tab)
G = Gate D = Drain
S = Source Tab = Drain
TO-3P (IXTQ)
G
D
SD (Tab)
TO-247 (IXTH)
GDSD (Tab)
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTA50N25T IXTQ50N25T
IXTP50N25T IXTH50N25T
Symbol Test Conditions Characteristic Values
(TJ = 25°C Unless Otherwise Specified) Min. Typ . Max.
gfs VDS= 10V, ID = 0.5 • ID25, Note 1 35 58 S
Ciss 4000 pF
Coss VGS = 0V, VDS = 25V, f = 1MHz 410 pF
Crss 60 pF
td(on) 14 ns
tr 25 ns
td(off) 47 ns
tf 25 ns
Qg(on) 78 nC
Qgs VGS= 10V, VDS = 0.5 • VDSS , ID = 0.5 • ID25 19 nC
Qgd 22 nC
RthJC 0.31 °C/W
RthCH (TO-220) 0.50 °C/W
(TO-3P & TO-247) 0.25 °C/W
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(TJ = 25°C Unless Otherwise Specified) Min. Typ . Max.
ISVGS = 0V 50 A
ISM Repetitive, Pulse Width Limited by TJM 200 A
VSD IF = IS, VGS = 0V, Note 1 1.5 V
trr 166 ns
IRM 23 A
QRM 1.9 μC
Note: 1. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Resistive Switching Times
VGS = 15V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 3.3Ω (External)
IF = 25A, -di/dt = 250A/μs
VR = 100V, VGS = 0V
© 2010 IXYS CORPORATION, All Rights Reserved
TO-263 (IXTA) Outline
e
∅ P
TO-247 (IXTH) Outline
1 2 3
Terminals: 1 - Gate 2 - Drain
3 - Source
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A12.2 2.54 .087 .102
A22.2 2.6 .059 .098
b 1.0 1.4 .040 .055
b11.65 2.13 .065 .084
b22.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
TO-3P (IXTQ) Outline
Pins: 1 - Gate 2 - Drain
3 - Source
TO-220 (IXTP) Outline
IXTA50N25T IXTQ50N25T
IXTP50N25T IXTH50N25T
Terminals: 1 - Gate
2 - Drain
3 - Source
Terminals: 1 - Gate 2 - Drain
3 - Source
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTA50N25T IXTQ50N25T
IXTP50N25T IXTH50N25T
Fi g . 1. Ou tp u t C h ar acter i sti cs @ TJ = 25ºC
0
5
10
15
20
25
30
35
40
45
50
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
7V
6V
5V
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
0
20
40
60
80
100
120
140
160
0 4 8 1216202428
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
8V
7V
5V
6V
Fi g . 3. Ou tp u t C h ar acter i sti cs @ TJ = 125ºC
0
5
10
15
20
25
30
35
40
45
50
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
7V
5V
6V
Fig. 4. RDS(on) Norm alized to ID = 25A Value vs.
Junction Tem perature
0.4
0.8
1.2
1.6
2
2.4
2.8
3.2
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
R
DS(on)
- Normalized
V
GS
= 10V
I
D
= 50A
I
D
= 25A
Fig. 5. RDS(on) Norm alized to ID = 25A Value vs.
Drain Current
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0 20 40 60 80 100 120 140
I
D
- Amperes
R
DS(on)
- Normalized
V
GS
= 10V
T
J
= 125ºC
T
J
= 25ºC
Fi g . 6. Maximum D r ai n C u r r ent vs.
Case Temp er atu r e
0
5
10
15
20
25
30
35
40
45
50
55
-50 -25 0 25 50 75 100 125 150
T
C
- Degrees Centigrade
I
D
- Amperes
© 2010 IXYS CORPORATION, All Rights Reserved
IXTA50N25T IXTQ50N25T
IXTP50N25T IXTH50N25T
Fig. 7. Input Adm ittance
0
10
20
30
40
50
60
70
80
90
100
3.6 4.0 4.4 4.8 5.2 5.6 6.0 6.4
VGS - Volts
ID - Amperes
T
J
= 125ºC
25ºC
- 40ºC
Fig. 8. Transconductance
0
10
20
30
40
50
60
70
80
90
100
0 102030405060708090100
ID - Amperes
g
f s
- Siemens
T
J
= - 40ºC
25ºC
125ºC
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
0
20
40
60
80
100
120
140
160
180
0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
VSD - Volts
IS - Amperes
T
J
= 125ºC
T
J
= 25ºC
Fi g . 10. Gate C h ar ge
0
1
2
3
4
5
6
7
8
9
10
0 1020304050607080
QG - NanoCoulombs
VGS - Volts
V
DS
= 125V
I
D
= 25A
I
G
= 10mA
Fig. 11. Capacitance
10
100
1,000
10,000
0 5 10 15 20 25 30 35 40
VDS - Volts
Capacitance - PicoFarads
f
= 1 MHz
Ciss
Crss
Coss
Fi g . 12. Maximum Tr an si en t Ther mal I mped an ce
0.01
0.10
1.00
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse W idth - Seconds
Z(th)JC - ºC / W
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTA50N25T IXTQ50N25T
IXTP50N25T IXTH50N25T
IXYS REF: T_50N25T(5G)01-26-10-A
Fi g . 14. R esi sti ve Tu r n -o n
Ri se Ti me vs. Dr ai n C ur r e n t
20
21
22
23
24
25
26
15 20 25 30 35 40 45 50
I
D
- Amperes
t
r
- Nanoseconds
R
G
= 3.3 , V
GS
= 15V
V
DS
= 125V
T
J
= 125ºC
T
J
= 25ºC
Fi g . 1 5. Resi st i ve Tu rn -o n
Switc h i ng Ti mes vs. Gate R es i stance
14
18
22
26
30
34
38
2468101214161820
R
G
- Ohms
t
r
- Nanoseconds
13
15
17
19
21
23
25
t
d
(
o n
)
- Nanoseconds
t
r
t
d(on)
- - - -
T
J
= 125ºC, V
GS
= 15V
V
DS
= 125V
I
D
= 25A, 50A
Fi g. 16. Resi st i ve Tur n-o ff
Switch i n g Ti mes vs. Ju n cti o n Temper atu r e
18
19
20
21
22
23
24
25
26
27
28
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
f
- Nanoseconds
42
44
46
48
50
52
54
56
58
60
62
t
d
(
o f f
)
- Nanoseconds
t
f
t
d(off)
- - - -
R
G
= 3.3, V
GS
= 15V
V
DS
= 125V
I
D
= 25A
I
D
= 50A
Fig . 17. R esisti ve Tu rn -off
Switc h i ng Ti mes vs. Dr ai n Cu r ren t
16
18
20
22
24
26
28
30
15 20 25 30 35 40 45 50
I
D
- Amperes
t f
- Nanoseconds
38
42
46
50
54
58
62
66
t d
(
o f f
)
- Nanoseconds
t
f
t
d(off)
- - - -
R
G
= 3.3, V
GS
= 15V
V
DS
= 125V
T
J
= 125ºC
T
J
= 25ºC
T
J
= 25ºC
T
J
= 125ºC
Fi g . 13. R esi sti ve Tu r n -o n
Ri se Ti me vs. Ju n cti o n Tempe rat u re
19
20
21
22
23
24
25
26
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
r
- Nanoseconds
R
G
= 3.3 , V
GS
= 15V
V
DS
= 125V
I
D
= 50A
I
D
= 25A
Fi g . 18. R esi sti ve Tu r n -o ff
Switch i n g Ti mes vs. Gate R esi sta n ce
10
20
30
40
50
60
70
80
90
100
2 4 6 8 101214161820
R
G
- Ohms
t
f
- Nanoseconds
40
60
80
100
120
140
160
180
200
220
t
d
(
o f f
)
- Nanoseconds
t
f
t
d(off)
- - - -
T
J
= 125ºC, V
GS
= 15V
V
DS
= 125V
I
D
= 25A, 50A
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