Advance Product Information October 5, 2004 32 - 47 GHz Wide Band Driver Amplifier TGA4521-EPU Key Features * * * * * * * * The TriQuint TGA4521-EPU is a compact Driver Amplifier MMIC for Ka-band and Q-band applications. The part is designed using TriQuint's proven standard 0.25um power pHEMT production process. The TGA4521-EPU nominally provides 24 dBm saturated output power, and 23 dBm output power at 1dB Gain compression @ 38 GHz. It also has typical gain of 15 dB. The part is ideally suited for low cost emerging markets such as Digital Radio, Point-to-Point Radio and Point-to-Multi Point Communications. The TGA4521-EPU is 100% DC and RF tested onwafer to ensure performance compliance. Primary Applications * * * * Digital Radio Point-to-Point Radio Point-to-Multipoint Communications Military SAT-COM Measured Fixtured Data Bias Conditions: Vd = 6 V, Idq = 200 mA 20 Gain 15 S-parameter (dB) Product Description Frequency Range: 32 - 47 GHz 24 dBm Nominal Psat @ 38 GHz 23 dBm P1dB @ 38 GHz 15 dB Nominal Gain @ 38 GHz 32 dBm OTOI @ 16dBm/Tone Bias: 5-6 V @ 200 mA Idq 0.25 um 3MI pHEMT Technology Chip Dimensions 1.60 x 0.75 x 0.10 mm (0.063 x 0.030 x 0.004 in) 10 5 0 ORL -5 -10 IRL -15 -20 32 34 36 38 40 42 44 46 48 Frequency (GHz) Output Power (dBm) 28 26 Psat 24 22 20 P1dB 18 16 32 34 36 38 40 42 44 46 48 Frequency (GHz) Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice 1 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com Advance Product Information October 5, 2004 TGA4521-EPU TABLE I MAXIMUM RATINGS 1/ SYMBOL PARAMETER VALUE NOTES 8V 2/ Vd Drain Voltage Vg Gate Voltage Range Id Drain Current 350 mA 2/ 3/ Ig Gate Current 9 mA 3/ PIN Input Continuous Wave Power PD Power Dissipation -2 TO 0 V 20 dBm See note 4/ 0 TCH Operating Channel Temperature 150 C TM Mounting Temperature (30 Seconds) 320 0C TSTG Storage Temperature 2/ 5/ 6/ -65 to 150 0C 1/ These ratings represent the maximum operable values for this device. 2/ Combinations of supply voltage, supply current, input power, and output power shall not exceed PD. 3/ Total current for the entire MMIC. 4/ For a median life time of 1E+6 hrs, Power dissipation is limited to: PD(max) = (150 0C - TBASE 0C) / 70 (0C/W) Where TBASE is the base plate temperature. 5/ Junction operating temperature will directly affect the device median time to failure (MTTF). For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. 6/ These ratings apply to each individual FET. Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice 2 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com Advance Product Information October 5, 2004 TGA4521-EPU TABLE II ELECTRICAL CHARACTERISTICS (Ta = 25 0C Nominal) PARAMETER TYPICAL UNITS Frequency Range 33 - 47 GHz Drain Voltage, Vd 6.0 V Drain Current, Id 200 mA Gate Voltage, Vg -0.5 V Small Signal Gain, S21 12 dB Input Return Loss, S11 7 dB Output Return Loss, S22 7 dB Output Power @ 1dB Gain Compression, P1dB 23 dBm Saturated Power, Psat 25 dBm TABLE III THERMAL INFORMATION PARAMETER RJC Thermal Resistance (channel to Case) TEST CONDITIONS Vd = 5 V Id = 200 mA Pdiss = 1.0 W TCH O ( C) RTJC (qC/W) TM (HRS) 140 70 2.4E+6 Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20 mil CuMo o Carrier at 70 C baseplate temperature. Worst case condition with no RF applied, 100% of DC power is dissipated. Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice 3 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com Advance Product Information October 5, 2004 TGA4521-EPU Preliminary Measured Data Bias Conditions: Vd = 5 - 6 V, Idq = 200 mA 20 18 5V 16 Gain (dB) 14 12 10 6V 8 6 4 2 0 30 32 34 36 38 40 42 44 46 48 50 Frequency (GHz) Bias Conditions: Vd = 6 V, Idq = 200 mA 20 15 Return Loss (dB) 10 5 0 -5 ORL -10 IRL -15 -20 30 32 34 36 38 40 42 44 46 48 50 Frequency (GHz) Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice 4 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com Advance Product Information October 5, 2004 TGA4521-EPU Preliminary Measured Data Bias Conditions: Vd = 4 - 6 V, Idq = 200 mA 26 Vd=6V 25 Vd=5V 24 Vd=4V P1dB (dBm) 23 22 21 20 19 18 17 16 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 Frequency (GHz) 26 Vd=6V 25 Vd=5V 24 Vd=4V Psat (dBm) 23 22 21 20 19 18 17 16 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 Frequency (GHz) Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice 5 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com Advance Product Information October 5, 2004 TGA4521-EPU Preliminary Measured Data 26 500 Pout 22 Pout (dBm) & Gain (dB) 450 Gain 400 Id 20 350 18 300 16 250 14 200 12 150 10 100 8 50 6 0 -8 -6 -4 -2 0 2 4 6 8 10 12 14 16 Id (mA) 24 Bias Conditions: Vd = 6 V, Idq = 200 mA, Freq = 38 GHz 18 Pin (dBm) 26 500 Bias Conditions: Vd = 5V, Idq = 200 mA, Freq = 38 GHz 24 Gain 22 400 Id 20 350 18 300 16 250 14 200 12 150 10 100 8 50 6 0 -8 -6 -4 -2 0 2 4 6 8 10 12 14 16 Id (mA) Pout (dBm) & Gain (dB) 450 Pout 18 Pin (dBm) Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice 6 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com Advance Product Information October 5, 2004 TGA4521-EPU Preliminary Measured Data Bias Conditions: Vd = 6 V, Idq = 200 mA, f=10MHz 36 35 OTOI (dBm) & IMD3 (dBc) 34 33 32 31 30 29 28 IMD3@16dBm/tone 27 OTOI@ 16dBm/tone 26 35.0 35.5 36.0 36.5 37.0 37.5 38.0 38.5 39.0 39.5 40.0 20 21 22 Frequency (GHz) 44 42 40 38 36 IMD3 (dBc) 34 32 30 28 26 24 37GHz 22 38GHz 20 39GHz 18 40GHz 16 6 7 8 9 10 11 12 13 14 15 16 17 18 19 Output Power / Tone (dBm) Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice 7 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com Advance Product Information October 5, 2004 TGA4521-EPU Mechanical Drawing 0.086 0.267 (0.003) (0.011) 0.346 (0.014) 1.167 (0.046) 1.316 (0.052) 5 6 1.490 (0.059) 0.750 (0.030) 0.651 (0.026) 3 4 0.651 (0.026) 7 NE 2 1 0.353 (0.014) RC B RC B 8 0.217 (0.009) 9 0 0 0.113 (0.004) 0.793 (0.031) 1.485 1.599 (0.058) (0.063) Units: millimeters (inches) Thickness: 0.100 (0.004) Chip edge to bond pad dimensions are shown to center of bond pad Chip size tolerance: +/- 0.051 (0.002) GND is back side of MMIC Bond pad #1 Bond pad #2 Bond pad #3, 9 Bond pad #4, 5, 7 Bond pad #6 Bond pad #8 (RF In) (N/C) (Vg) (Vd) (N/C) (RF Out) 0.100 x 0.120 0.081 x 0.100 0.108 x 0.108 0.108 x 0.108 0.091 x 0.084 0.100 x 0.120 (0.004 x 0.005) (0.003 x 0.004) (0.004 x 0.004) (0.004 x 0.004) (0.004 x 0.003) (0.004 x 0.005) GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice 8 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com Advance Product Information October 5, 2004 TGA4521-EPU Recommended Chip Assembly Diagram Vd Vg 0.01 F 0.01 F 100pF 15 15 100pF 1.0 F 1.0 F TFN (10mil Alumina) TFN (10mil Alumina) 450um 180um 180 x 200um Pad 100pF (Alternative Vg) Vg 0.01 F 15 1.0 F Bias Conditions: Vd = 4 - 6 V Vg = ~ -0.5 V to get 200mA Id GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice 9 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com Advance Product Information October 5, 2004 TGA4521-EPU Assembly Process Notes Reflow process assembly notes: * * * * * 0 Use AuSn (80/20) solder with limited exposure to temperatures at or above 300 C (30 seconds max). An alloy station or conveyor furnace with reducing atmosphere should be used. No fluxes should be utilized. Coefficient of thermal expansion matching is critical for long-term reliability. Devices must be stored in a dry nitrogen atmosphere. Component placement and adhesive attachment assembly notes: * * * * * * * Vacuum pencils and/or vacuum collets are the preferred method of pick up. Air bridges must be avoided during placement. The force impact is critical during auto placement. Organic attachment can be used in low-power applications. Curing should be done in a convection oven; proper exhaust is a safety concern. Microwave or radiant curing should not be used because of differential heating. Coefficient of thermal expansion matching is critical. Interconnect process assembly notes: * * * * Thermosonic ball bonding is the preferred interconnect technique. Force, time, and ultrasonics are critical parameters. Aluminum wire should not be used. 0 Maximum stage temperature is 200 C. GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice 10 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com