TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
October 5, 2004
1
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifica tions.
Specifications are subject to change without notice
16
18
20
22
24
26
28
32 34 36 38 40 42 44 46 48
Frequency (GHz)
Output Power (dBm)
-20
-15
-10
-5
0
5
10
15
20
32 34 36 38 40 42 44 46 48
Fr eque nc y (GHz)
S-param eter (dB)
32 - 47 GHz Wide Band Driver Amplifier TGA4521-EPU
Key Features
• Frequency Range: 32 - 47 GHz
• 24 dBm Nominal Psat @ 38 G Hz
• 23 dBm P1dB @ 38 GHz
• 15 dB No minal Gain @ 38 GHz
• 32 dBm OTOI @ 16dBm/Ton e
• Bias: 5-6 V @ 200 mA Idq
• 0.25 um 3MI pHEMT Technolog y
• Chip Dimensions 1.60 x 0.75 x 0.10 mm
(0.063 x 0.030 x 0.004 in)
Primary Applications
• Digital Radio
• Point-to-Point Radio
• Point-to-Multipoint Communicati ons
• Military SAT-COM
Measured Fixtured Data
Bias Conditions: Vd = 6 V, Idq = 200 mA
Psat
P1dB
Product Description
The TriQuint TGA4521-EPU is a compact Driver
Amplifier MMIC for Ka-band and Q-band
applications. The part is designed using TriQuint’s
proven standard 0.25um power pHEMT production
process.
The TGA4521-EPU nominally provides 24 dBm
saturated output power, and 23 dBm output power
at 1dB Gain compression @ 38 GHz. It also has
typical gain of 15 dB.
The part is ideally suited for low cost emerging
markets such as Digital Radio, Point-to-Point
Radio and Point-to-Multi Point Communications.
The TGA4521-EPU is 100% DC and RF tested on-
wafer to ensure performance compliance.
Gain
IRL
ORL
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
October 5, 2004
2
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifica tions.
Specifications are subject to change without notice
TABLE I
MAXIMUM RAT INGS 1/
SYMBOL PARAMETER VALUE NOTES
Vd Drain Voltage 8 V 2/
Vg Gate Voltage Range -2 TO 0 V
Id Drain C urrent 350 mA 2/ 3/
IgGate Current 9 mA 3/
PIN Input Continuou s Wave Power 20 dBm
PDPower Dissipation See n ote 4/ 2/
TCH Ope rating Cha nnel Tempera ture 150 0C5/ 6/
TMMounting Temperature (30 Seconds) 320 0C
TSTG Storage Te m perature -65 to 150 0C
1/ These ra tings repres en t the ma ximum operable value s for this device.
2/ Com binations of supply voltage, supply current, input power, and output pow er shall not exceed PD
.
3/ Total current for the entire MMIC.
4/ For a me dian life time of 1E+6 hrs, Power dissipation is limited to:
PD(max) = (150 0C – TBASE 0C) / 70 ( 0C/W)
Where T BASE is the base plate tem perature.
5/ Junction operating tem pe rature will directly affect the device m edian time to failure (MTT F ). For
maximum life, it is recom m ended that junction tempe ratures b e maintained at the lowest possible
levels.
6/ These ra tings apply to eac h individual FET .
TGA4521-EPU
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
October 5, 2004
3
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifica tions.
Specifications are subject to change without notice
TABLE II
ELECTRICAL CHA RACTERIST ICS
(Ta = 25 0C Nominal)
TGA4521-EPU
PARAMETER TYPICAL UNITS
Frequency Range 33 - 47 GH z
Drain Voltage, Vd 6.0 V
Drain Current, Id 200 m A
Gate Voltage, Vg -0.5 V
Small Signal G ain, S21 12 dB
Input R eturn Loss, S11 7 dB
Output Return Loss, S22 7 dB
Output Power @ 1dB Gain Compression, P1dB 23 dBm
Saturated Power, Psat 25 dB m
TABLE III
THERMAL INFORMATION
PARAMETER TEST CONDITIONS TCH
(OC) R
T
JC
(qC/W) TM
(HRS)
RθJC Thermal Re sistance
(channel to Case)
Vd = 5 V
Id = 200 mA
Pdiss = 1. 0 W 140 70 2.4E+6
Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20 mil CuMo
Carrier at 70 oC b aseplat e temp erature. Worst case condition with no RF applied, 100%
of DC p ower is dissi pated.
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
October 5, 2004
4
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifica tions.
Specifications are subject to change without notice
-20
-15
-10
-5
0
5
10
15
20
30 32 34 36 38 40 42 44 46 48 50
Frequency (GHz)
Return L o ss (dB)
0
2
4
6
8
10
12
14
16
18
20
30 32 34 36 38 40 42 44 46 48 50
Fr equency ( G Hz)
G ain (dB)
TGA4521-EPU
Prelimi nary Measured Data
Bias Conditions: Vd = 5 - 6 V, Idq = 200 mA
6V
5V
Bias Conditions: Vd = 6 V, Idq = 200 mA
ORL
IRL
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
October 5, 2004
5
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifica tions.
Specifications are subject to change without notice
16
17
18
19
20
21
22
23
24
25
26
32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47
Frequency (GHz)
P1dB (dBm)
Vd=6V
Vd=5V
Vd=4V
TGA4521-EPU
Prelimi nary Measured Data
Bias Conditions: Vd = 4 - 6 V, Idq = 200 mA
16
17
18
19
20
21
22
23
24
25
26
32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47
Frequency (GHz)
Psat (dBm)
Vd=6V
Vd=5V
Vd=4V
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
October 5, 2004
6
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifica tions.
Specifications are subject to change without notice
6
8
10
12
14
16
18
20
22
24
26
-8 -6 -4 -2 0 2 4 6 8 1012141618
Pin (dBm)
Pout (dBm) & Ga in (d B)
0
50
100
150
200
250
300
350
400
450
500
Id (mA)
Pout
Gain
Id
6
8
10
12
14
16
18
20
22
24
26
-8 -6 -4 -2 0 2 4 6 8 10 12 14 16 18
Pin (dBm)
Po ut (dBm) & Gain (d B)
0
50
100
150
200
250
300
350
400
450
500
Id (mA)
Pout
Gain
Id
TGA4521-EPU
Prelimi nary Measured Data
Bias Conditions: Vd = 5V, Idq = 200 mA, Freq = 38 GHz
Bias Conditions: Vd = 6 V, Idq = 200 mA, Freq = 38 GHz
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
October 5, 2004
7
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifica tions.
Specifications are subject to change without notice
TGA4521-EPU
26
27
28
29
30
31
32
33
34
35
36
35.0 35.5 36.0 36.5 37.0 37.5 38.0 38.5 39.0 39.5 40.0
Fre quency (GHz)
OTOI (dBm) & IM D3 (dBc)
IMD3@16dBm/tone
OT OI@ 16dBm /ton e
Prelimi nary Measured Data
Bias Conditions: Vd = 6 V, Idq = 200 mA, f=10MHz
16
18
20
22
24
26
28
30
32
34
36
38
40
42
44
6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22
O utp u t P o wer / T o n e (d Bm)
IMD3 (dBc)
37GHz
38GHz
39GHz
40GHz
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
October 5, 2004
8
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifica tions.
Specifications are subject to change without notice
Mechanical Drawing
TGA4521-EPU
GaAs MMIC devices are susceptible to damage from Elec trostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
NE
Units: millimeters (inches)
Thickness: 0.100 (0.004)
Chip edge to bond pad dimensions are shown to center of bond pad
Chip size tolerance: +/- 0.051 (0.002)
GND is back side of MMIC
Bond pad #1
Bond pad #2
Bond pad #3, 9
Bond pad #4, 5, 7
Bond pad #6
(RF In)
(N/C)
(Vg)
(Vd)
(N/C)
0.100 x 0.120
0.081 x 0.100
0.108 x 0.108
0.108 x 0.108
0.091 x 0.084
Bond pad #8 (RF Out) 0.100 x 0.120
(0.004 x 0.005)
(0.003 x 0.004)
(0.004 x 0.004)
(0.004 x 0.004)
(0.004 x 0.003)
(0.004 x 0.005)
1
234567
8
9
0
0
0.113
(0.004) 0.793
(0.031) 1.485
(0.058) 1.599
(0.063)
0.217
(0.009)
0.651
(0.026)
1.490
(0.059)
1.316
(0.052)
1.167
(0.046)
0.346
(0.014)
0.267
(0.011)
0.086
(0.003)
0.750
(0.030)
0.651
(0.026)
0.353
(0.014)
RCRC B B
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
October 5, 2004
9
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifica tions.
Specifications are subject to change without notice
Recommended Chip Assembly Diagram
TGA4521-EPU
GaAs MMIC devices are susceptible to damage from Elec trostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
Bias Co nditions: Vd = 4 - 6 V
Vg = ~ -0.5 V to get 200mA Id
100pF
100pF
100pF
0.01 F
Vg
(Alternative Vg)
Vd
1.0 F
15
0.01 F
1.0 F
1.0 F
15
0.01 F
TFN (10mil Alumina)
180 x 200um Pad
Vg
15
TFN (10mil Alumina)
450um
180um
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
Advance Product Information
October 5, 2004
10
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifica tions.
Specifications are subject to change without notice
Assembly Process Notes
GaAs MMIC devices are susceptible to damage from Elec trostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
TGA4521-EPU
Reflow process assembly notes:
• Use AuSn (80/20) solder with limited exposure to temperatures at or above 300 0C (30 se conds max).
• An alloy station or convey or furnace with reducing atmosphere should be used.
• No flux es should be utilized.
• Co efficient of thermal exp ansion matching is critical for long-term reliability.
• Devices must be stored in a dry nitrogen atmosphere.
Component placement and adhesive attachment assembly notes:
• Vacuum pencils and/or vacuum collets are the preferred method of pick up.
• Air bridges must be avoided during placement.
• The force impact is critical during auto placement.
• Organic attachment can be used in low- power applications.
• Cu ring should be done in a convection oven; proper exhaust is a safety concern.
• Microwave or radiant curing should not be used b ecause of differential heating.
• Co efficient of thermal exp ansion matching is critical.
Interconnect proce ss assemb ly notes:
• Thermosonic ball bonding is the preferred interconnect technique.
• Force, time, and ultrasonics are critical parameters.
• Aluminum wire should not be used.
• Maximum stage temperature is 2000C.
