7MBR50SA060 IGBT Modules IGBT MODULE (S series) 600V / 50A / PIM Features * Low VCE(sat) * Compact package * P.C. board mount * Converter diode bridge, Dynamic brake circuit Applications * Inverter for motor drive * AC and DC servo drive amplifier * Uninterruptible power supply Maximum ratings and characteristics Absolute maximum ratings (Tc=25C unless without specified) Item Symbol Collector-Emitter voltage Gate-Emitter voltage Converter Brake Inverter VCES VGES IC Collector current ICP -IC Collector power dissipation PC Collector-Emitter voltage VCES Gate-Emitter voltage VGES Collector current IC ICP Collector power dissipation PC Repetitive peak reverse voltage VRRM Repetitive peak reverse voltage VRRM Average output current IO Surge current (Non-Repetitive) IFSM I 2t (Non-Repetitive) I2 t Operating junction temperature Tj Storage temperature Tstg Isolation between terminal and copper base *2 Viso voltage between thermistor and others *3 Mounting screw torque Condition t No 600 20 50 100 50 200 600 20 30 60 120 600 800 50 350 613 +150 -40 to +125 AC 2500 AC 2500 3.5 *1 ew n for Continuous 1ms nd e mm o c e r de Rat ing 1 device Continuous 1ms 1 device 50Hz/60Hz sine wave Tj=150C, 10ms half sine wave AC : 1 minute *1 Recommendable value : 2.5 to 3.5 N*m (M5) *2 All terminals should be connected together when isolation test will be done. *3 Terminal 8 and 9 should be connected together. Terminal 1 to 7 and 10 to 24 should be connected together and shorted to copper base. http://store.iiic.cc/ . n sig Unit V V A A A W V V A A W V V A A A 2s C C V V N*m 7MBR50SA060 IGBT Modules Electrical characteristics (Tj=25C unless otherwise specified) Item Symbol Condition Characteristics Typ. Max. 1.0 0.2 5.5 7.8 8.5 1.8 1.95 2.4 5000 Unit Inverter Min. Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage ICES IGES VGE(th) VCE(sat) Input capacitance Turn-on time Cies ton tr tr(i) toff tf VF Turn-off Brake Forward on voltage Reverse recovery time of FRD Zero gate voltage collector current Gate-Emitter leakage current Collector-Emitter saturation voltage trr ICES IGES VCE(sat) Turn-on time Reverse current Forward on voltage ton tr toff tf IRRM VFM Reverse current Resistance IRRM R B value B Thermistor Converter Turn-off time VCE=600V, VGE=0V VCE=0V, VGE=20V VCE=20V, IC=50mA VGE=15V, Ic=50A chip terminal VGE=0V, VCE=10V, f=1MHz VCC=300V IC=50A VGE=15V RG=51 IF=50A chip terminal IF=50A VCES=600V, VGE=0V VCE=0V, VGE=20V IC=30A, VGE=15V chip terminal VCC=300V IC=30A VGE=15V RG=82 VR=600V IF=50A chip terminal VR=800V T=25C T=100C T=25/50C for nd e mm Symbol ot Thermal resistance ( 1 device ) N Contact thermal resistance o c e r Rth(j-c) * Rth(c-f) 1.0 0.35 V 2.6 0.3 1.0 0.2 465 3305 w ne Condition Min. s mA A V 2.4 1.2 0.6 1.0 0.35 1.0 1.1 1.2 n. sig 5000 495 3375 pF s 1.2 0.6 1.8 1.95 0.45 0.25 0.40 0.05 de Thermal resistance Characteristics Item 0.45 0.25 0.08 0.40 0.05 1.75 1.9 mA A V V 1.5 1.0 520 3450 K Unit 0.63 1.33 1.04 0.90 0.05 * This is the value which is defined mounting on the additional cooling fin with thermal compound Equivalent Circuit Schematic [Converter] 21(P) [B ra k e ] [Thermistor] [In v er ter ] 2 2 (P 1 ) 8 2 0 (G u) 1(R) 2(S) 3(T) 1 8 (G v) 1 7 (E v ) 1 9 (E u ) 7 (B ) 1 4 (G b) 4 (U ) 1 3 (G x) 1 6 (G w ) 1 5 (E w ) 5 (V ) 1 2 (G y) 6 (W ) 1 1 (G z) 1 0 (E n ) 23(N) 2 4 (N 1 ) http://store.iiic.cc/ mA V mA Characteristics Typ. Max. Inverter IGBT Inverter FWD Brake IGBT Converter Diode With thermal compound s 9 C/W 7MBR50SA060 IGBT Modules Characteristics (Representative) [ Inverter ] Collector current vs. Collector-Emitter voltage [ Inverter ] Collector current vs. Collector-Emitter voltage o o Tj= 25 C (typ.) 120 15V 12V 100 100 80 80 Collector current : Ic [ A ] Collector current : Ic [ A ] VGE= 20V Tj= 125 C (typ.) 120 60 40 10V 20 15V VGE= 20V 12V 60 40 10V 20 0 0 0 1 2 3 4 5 0 1 Collector - Emitter voltage : VCE [ V ] 2 [ Inverter ] Collector current vs. Collector-Emitter voltage VGE=15V (typ.) 5 o Tj= 25 C (typ.) 10 o 4 [ Inverter ] Collector-Emitter voltage vs. Gate-Emitter voltage 120 o Tj= 25 C 100 3 Collector - Emitter voltage : VCE [ V ] Tj= 125 C 80 Collector - Emitter voltage : VCE [ V ] Collector current : Ic [ A ] 8 n sig ew n for 60 40 e m m . de 6 4 nd 20 0 0 1 2 eco 3 r 5 10 Ic= 25A 15 20 25 Gate - Emitter voltage : VGE [ V ] [ Inverter ] Dynamic Gate charge (typ.) [ Inverter ] Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f= 1MHz, Tj= 25 Ic= 50A 0 4 Collector - Emitter voltage : VCE [ V ] t No Ic=100A 2 o Vcc=300V, Ic=50A, Tj= 25 C 20000 o C 500 25 400 20 300 15 200 10 100 5 Cies 1000 Coes Cres 100 0 0 5 10 15 20 25 30 35 0 Collector - Emitter voltage : VCE [ V ] 50 100 150 200 Gate charge : Qg [ nC ] http://store.iiic.cc/ 250 0 300 Gate - Emitter voltage : VGE [ V ] Collector - Emitter voltage : VCE [ V ] Capacitance : Cies, Coes, Cres [ pF ] 10000 7MBR50SA060 IGBT Modules [ Inverter ] Switching time vs. Collector current (typ.) Vcc=300V, VGE=15V, Rg=51, Tj=125C [ Inverter ] Switching time vs. Collector current (typ.) Vcc=300V, VGE=15V, Rg=51, Tj=25C 1000 1000 toff toff Switching time : ton, tr, toff, tf [ nsec ] Switching time : ton, tr, toff, tf [ nsec ] ton tr 100 tf ton tr tf 100 10 10 0 20 40 60 80 0 20 Collector current : Ic [ A ] 40 60 80 Collector current : Ic [ A ] [ Inverter ] Switching time vs. Gate resistance (typ.) [ Inverter ] Switching loss vs. Collector current (typ.) Vcc=300V, VGE=15V, Rg=51 Vcc=300V, Ic=50A, VGE=15V, Tj=25C 5 5000 ton e m m nd 10 10 50 o c e r 100 Gate resistance : Rg [ t No Eon(125 C) 4 o Eoff(125 C) . n g i s e d 3 ew n for tf 100 Switching loss : Eon, Eoff, Err [ mJ/pulse ] 1000 2 o Eon(25 C) o Eoff(25 C) 1 o Err(125 C) o Err(25 C) 0 500 0 20 40 ] 60 80 100 Collector current : Ic [ A ] [ Inverter ] Switching loss vs. Gate resistance (typ.) Vcc=300V, Ic=50A, VGE=15V, Tj=125C [ Inverter ] Reverse bias safe operating area +VGE=15V, -VGE<15V, Rg>51, Tj<125C = = = 120 10 Eon 100 8 Collector current : Ic [ A ] Switching loss : Eon, Eoff, Err [ mJ/pulse ] Switching time : ton, tr, toff, tf [ nsec ] o toff tr 6 Eoff 4 80 60 40 2 20 Err 0 0 10 50 100 Gate resistance : Rg [ 500 ] 0 200 400 600 Collector - Emitter voltage : VCE [ V ] http://store.iiic.cc/ 800 IGBT Modules 7MBR50SA060 [ Inverter ] Reverse recovery characteristics (typ.) Vcc=300V, VGE=15V, Rg=51 [ Inverter ] Forward current vs. Forward on voltage (typ.) 120 300 100 o o Reverse recovery current : Irr [ A ] Forward current : IF [ A ] Tj=25 C 80 60 40 Reverse recovery time : trr [ nsec ] Tj=125 C 100 o trr(125 C) o trr(25 C) o Irr(125 C) 20 o Irr(25 C) 0 10 0 1 2 3 0 20 Forward on voltage : VF [ V ] 40 60 80 Forward current : IF [ A ] [ Converter ] Forward current vs. Forward on voltage (typ.) 120 Forward current : IF [ A ] o o Tj= 125 C Tj= 25 C 100 60 n sig ew n for 40 20 0 0.0 . de 80 0.4 0.8 nd e mm eco 1.2 1.6 2.0 r Forward on voltage : VFM [ V ] t No [ Thermistor ] Temperature characteristic (typ.) Transient thermal resistance 200 5 FWD[Inverter] IGBT[Brake] 1 Conv. Diode Resistance : R [ k ] o Thermal resistanse : Rth(j-c) [ C/W ] 100 IGBT[Inverter] 0.1 10 1 0.01 0.001 0.01 0.1 1 0.1 -60 Pulse width : Pw [ sec ] -40 -20 0 20 40 60 Temperature [ http://store.iiic.cc/ 80 o C] 100 120 140 160 180 7MBR50SA060 IGBT Modules [ Brake ] Collector current vs. Collector-Emitter voltage [ Brake ] Collector current vs. Collector-Emitter voltage o o Tj= 25 C (typ.) 70 12V 15V 60 60 50 50 Collector current : Ic [ A ] Collector current : Ic [ A ] VGE= 20V Tj= 125 C (typ.) 70 40 30 20 12V 15V VGE= 20V 40 30 10V 20 10V 10 10 0 0 0 1 2 3 4 5 0 Collector - Emitter voltage : VCE [ V ] 1 2 [ Brake ] Collector current vs. Collector-Emitter voltage VGE=15V (typ.) 4 5 [ Brake ] Collector-Emitter voltage vs. Gate-Emitter voltage o 70 Tj= 25 C (typ.) 10 o 3 Collector - Emitter voltage : VCE [ V ] o Tj= 25 C Tj= 125 C 60 Collector - Emitter voltage : VCE [ V ] 8 40 20 10 0 0 1 2 4 nd e mm eco t No 4 5 10 Ic= 15A 15 20 25 Gate - Emitter voltage : VGE [ V ] [ Brake ] Dynamic Gate charge (typ.) [ Brake ] Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f= 1MHz, Tj= 25 Ic= 30A 0 3 r Ic= 60A 2 Collector - Emitter voltage : VCE [ V ] o Vcc=300V, Ic=30A, Tj= 25 C Collector - Emitter voltage : VCE [ V ] 10000 Capacitance : Cies, Coes, Cres [ pF ] n sig ew n for 30 . de 6 Cies 1000 Coes o C 500 25 400 20 300 15 200 10 100 5 Cres 100 0 0 5 10 15 20 25 30 35 0 Collector - Emitter voltage : VCE [ V ] 50 100 Gate charge : Qg [ nC ] http://store.iiic.cc/ 150 0 200 Gate - Emitter voltage : VGE [ V ] Collector current : Ic [ A ] 50 IGBT Modules 7MBR50SA060 Outline Drawings, mm de ew n for nd e mm t No o c e r http://store.iiic.cc/ . n sig