7MBR50SA060 - Fuji Electric - Datasheet.Directory

7MBR50SA060 IGBT Modules

Applications

· Inverter for motor drive

· AC and DC servo drive amplifier

· Uninterruptible power supply

Maximum ratings and characteristics

Absolute maximum ratings (Tc=25°C unless without specified)

Item Symbol Condition Rating Unit

Collector-Emitter voltage

Gate-Emitter voltage

Collector current

Collector power dissipation

Collector-Emitter voltage

Gate-Emitter voltage

Collector current

Collector power dissipation

Repetitive peak reverse voltage

Average output current

Surge current (Non-Repetitive)

I2t (Non-Repetitive)

Converter Brake Inverter

Operating junction temperature

Storage temperature

Isolation between terminal and copper base *2

voltage between thermistor and others *3

Mounting screw torque

VCES

VGES

IC

ICP

-IC

PC

VCES

VGES

IC

ICP

PC

VRRM

IO

IFSM

I2t

Tj

Tstg

Viso

Continuous

1ms

1 device

Continuous

1ms

1 device

50Hz/60Hz sine wave

Tj=150°C, 10ms

half sine wave

AC : 1 minute

600

±20

50

100

50

200

600

±20

30

60

120

600

800

50

350

613

+150

-40 to +125

AC 2500

3.5 *1

V

A

W

V

A

W

V

A

A2s

°C

V

N·m

*1 Recommendable value : 2.5 to 3.5 N·m (M5)

*2 All terminals should be connected together when isolation test will be done.

*3 Terminal 8 and 9 should be connected together. Terminal 1 to 7 and 10 to 24

should be connected together and shorted to copper base.

IGBT MODULE (S series)

600V / 50A / PIM

Features

· Low VCE(sat)

· Compact package

· P.C. board mount

· Converter diode bridge, Dynamic brake circuit

保守移行機種

Not recommend for new design.

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Electrical characteristics (Tj=25°C unless otherwise specified)

Item Symbol Condition Characteristics Unit

Min. Typ. Max.

Zero gate voltage collector current

Gate-Emitter leakage current

Gate-Emitter threshold voltage

Collector-Emitter saturation voltage

Input capacitance

Turn-on time

Turn-off

Forward on voltage

Reverse recovery time of FRD

Zero gate voltage collector current

Gate-Emitter leakage current

Collector-Emitter saturation voltage

Turn-on time

Turn-off time

Reverse current

Forward on voltage

Reverse current

Resistance

B value

Thermistor Converter Brake Inverter

ICES

IGES

VGE(th)

VCE(sat)

Cies

ton

tr

tr(i)

toff

tf

VF

trr

ICES

IGES

VCE(sat)

ton

tr

toff

tf

IRRM

VFM

IRRM

R

B

VCE=600V, VGE=0V

VCE=0V, VGE=±20V

VCE=20V, IC=50mA

VGE=15V, Ic=50A chip

terminal

VGE=0V, VCE=10V, f=1MHz

VCC=300V

IC=50A

VGE=±15V

RG=51Ω

IF=50A chip

terminal

IF=50A

VCES=600V, VGE=0V

VCE=0V, VGE=±20V

IC=30A, VGE=15V chip

terminal

VCC=300V

IC=30A

VGE=±15V

RG=82Ω

VR=600V

IF=50A chip

terminal

VR=800V

T=25°C

T=100°C

T=25/50°C

1.0

0.2

8.5

2.4

1.2

0.6

1.0

0.35

2.6

0.3

1.0

0.2

2.4

1.2

0.6

1.0

0.35

1.0

1.5

1.0

5000

5.5 7.8

mA

µA

V

pF

µs

V

µs

mA

µA

V

µs

mA

V

mA

Ω

K

Item Symbol Condition Characteristics Unit

Min. Typ. Max.

Inverter IGBT

Inverter FWD

Brake IGBT

Converter Diode

With thermal compound

0.63

1.33

1.04 °C/W

0.90

0.05

Thermal resistance ( 1 device ) Rth(j-c)

Contact thermal resistance * Rth(c-f)

Thermal resistance Characteristics

IGBT Modules 7MBR50SA060

* This is the value which is defined mounting on the additional cooling fin with thermal compound

Equivalent Circuit Schematic

1.8

1.95

0.45

0.25

0.08

0.40

0.05

1.75

1.9

1.8

1.95

0.45

0.25

0.40

0.05

1.1

1.2

5000

465 495 520

3305 3375 3450

89

[Thermistor]

[Converter] 21(P)

23(N)

1(R) 2(S) 3(T)

[Brake] [Inverter]

22(P1)

7(B)

14(Gb)

24(N1)

20(Gu)

19(Eu)

13(Gx)

18(Gv)

17(Ev)

4(U)

12(Gy)

5(V) 6(W)

16(Gw)

11(Gz) 10(En)

15(Ew)

保守移行機種

Not recommend for new design.

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IGBT Modules 7MBR50SA060

Characteristics (Representative)

012345

0

20

40

60

80

100

120

10V

12V

15VVGE= 20V

[ Inverter ]

Collector current vs. Collector-Emitter voltage

Tj= 25 oC (typ.)

Collector current : Ic [ A ]

Collector - Emitter voltage : VCE [ V ]

012345

0

20

40

60

80

100

120

10V

12V

15V

VGE= 20V

[ Inverter ]

Collector current vs. Collector-Emitter voltage

Tj= 125 oC (typ.)

Collector - Emitter voltage : VCE [ V ]

Collector current : Ic [ A ]

01234

0

20

40

60

80

100

120

Tj= 25oCTj= 125oC

[ Inverter ]

Collector current vs. Collector-Emitter voltage

VGE=15V (typ.)

Collector - Emitter voltage : VCE [ V ]

Collector current : Ic [ A ]

5 10152025

0

2

4

6

8

10

Ic= 25A

Ic= 50A

Ic=100A

[ Inverter ]

Collector-Emitter voltage vs. Gate-Emitter voltage

Tj= 25oC (typ.)

Collector - Emitter voltage : VCE [ V ]

Gate - Emitter voltage : VGE [ V ]

0 5 10 15 20 25 30 35

100

1000

10000

20000

[ Inverter ]

Capacitance vs. Collector-Emitter voltage (typ.)

VGE=0V, f= 1MHz, Tj= 25 oC

Capacitance : Cies, Coes, Cres [ pF ]

Collector - Emitter voltage : VCE [ V ]

Coes

Cres

Cies

0 50 100 150 200 250 300

0

100

200

300

400

500

[ Inverter ]

Dynamic Gate charge (typ.)

Vcc=300V, Ic=50A, Tj= 25 oC

Gate charge : Qg [ nC ]

Collector - Emitter voltage : VCE [ V ]

0

5

10

15

20

25

Gate - Emitter voltage : VGE [ V ]

保守移行機種

Not recommend for new design.

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IGBT Modules 7MBR50SA060

Vcc=300V, VGE=±15V, Rg=51Ω, Tj=25°C Vcc=300V, VGE=±15V, Rg=51Ω, Tj=125°C

Vcc=300V, Ic=50A, VGE=±15V, Tj=25°C Vcc=300V, VGE=±15V, Rg=51Ω

Vcc=300V, Ic=50A, VGE=±15V, Tj=125°C +VGE=15V , -VGE<15V, Rg>51Ω, Tj<125°C

===

0 20406080

10

100

1000

ton

tr

toff

tf

[ Inverter ]

Switching time vs. Collector current (typ.)

Switching time : ton, tr, toff, tf [ nsec ]

Collector current : Ic [ A ]

0 20406080

10

100

1000

tf

tr

ton

toff

[ Inverter ]

Switching time vs. Collector current (typ.)

Collector current : Ic [ A ]

Switching time : ton, tr, toff, tf [ nsec ]

10 50 100 500

10

100

1000

5000

toff

ton

tr

tf

[ Inverter ]

Switching time vs. Gate resistance (typ.)

Gate resistance : Rg [ Ω ]

Switching time : ton, tr, toff, tf [ nsec ]

0 20406080100

0

1

2

3

4

5

Err(25 oC)

Eoff(25 oC)

Eon(25 oC)

Err(125 oC)

Eoff(125 oC)

Eon(125 oC)

[ Inverter ]

Switching loss vs. Collector current (typ.)

Switching loss : Eon, Eoff, Err [ mJ/pulse ]

Collector current : Ic [ A ]

10 50 100 500

0

2

4

6

8

10

[ Inverter ]

Switching loss vs. Gate resistance (typ.)

Switching loss : Eon, Eoff, Err [ mJ/pulse ]

Gate resistance : Rg [ Ω ]

Eon

Err

Eoff

0 200 400 600 800

0

20

40

60

80

100

120

[ Inverter ]

Reverse bias safe operating area

Collector - Emitter voltage : VCE [ V ]

Collector current : Ic [ A ]

保守移行機種

Not recommend for new design.

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IGBT Modules 7MBR50SA060

0123

0

20

40

60

80

100

120

Tj=25oC

Tj=125 oC

[ Inverter ]

Forward current vs. Forward on voltage (typ.)

Forward current : IF [ A ]

Forward on voltage : VF [ V ]

0 20406080

10

100

300

Irr(125 oC)

Irr(25oC)

trr(25oC)

trr(125 oC)

[ Inverter ]

Reverse recovery characteristics (typ.)

Forward current : IF [ A ]

Reverse recovery current : Irr [ A ]

Reverse recovery time : trr [ nsec ]

0.0 0.4 0.8 1.2 1.6 2.0

0

20

40

60

80

100

120

Tj= 25 oCTj= 125 oC

[ Converter ]

Forward current vs. Forward on voltage (typ.)

Forward on voltage : VFM [ V ]

Forward current : IF [ A ]

0.001 0.01 0.1 1

0.01

0.1

1

5

IGBT[Brake]

Transient thermal resistance

Thermal resistanse : Rth(j-c) [

oC/W ]

Pulse width : Pw [ sec ]

FWD[Inverter]

Conv. Diode

IGBT[Inverter]

-60 -40 -20 0 20 40 60 80 100 120 140 160 180

0.1

1

10

100

200

[ Thermistor ]

Temperature characteristic (typ.)

Temperature [ oC ]

Resistance : R [ k Ω ]

Vcc=300V, VGE=±15V, Rg=51Ω

保守移行機種

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IGBT Modules 7MBR50SA060

012345

0

10

20

30

40

50

60

70

10V

12V

15VVGE= 20V

[ Brake ]

Collector current vs. Collector-Emitter voltage

Tj= 25 oC (typ.)

Collector current : Ic [ A ]

Collector - Emitter voltage : VCE [ V ]

012345

0

10

20

30

40

50

60

70

10V

12V

15V

VGE= 20V

[ Brake ]

Collector current vs. Collector-Emitter voltage

Tj= 125 oC (typ.)

Collector - Emitter voltage : VCE [ V ]

Collector current : Ic [ A ]

01234

0

10

20

30

40

50

60

70

Tj= 25oCTj= 125oC

[ Brake ]

Collector current vs. Collector-Emitter voltage

VGE=15V (typ.)

Collector - Emitter voltage : VCE [ V ]

Collector current : Ic [ A ]

5 10152025

0

2

4

6

8

10

Ic= 15A

Ic= 30A

Ic= 60A

[ Brake ]

Collector-Emitter voltage vs. Gate-Emitter voltage

Tj= 25oC (typ.)

Collector - Emitter voltage : VCE [ V ]

Gate - Emitter voltage : VGE [ V ]

0 5 10 15 20 25 30 35

100

1000

10000

[ Brake ]

Capacitance vs. Collector-Emitter voltage (typ.)

VGE=0V, f= 1MHz, Tj= 25 oC

Capacitance : Cies, Coes, Cres [ pF ]

Collector - Emitter voltage : VCE [ V ]

Coes

Cres

Cies

0 50 100 150 200

0

100

200

300

400

500

[ Brake ]

Dynamic Gate charge (typ.)

Vcc=300V, Ic=30A, Tj= 25 oC

Gate charge : Qg [ nC ]

Collector - Emitter voltage : VCE [ V ]

0

5

10

15

20

25

Gate - Emitter voltage : VGE [ V ]

保守移行機種

Not recommend for new design.

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IGBT Modules 7MBR50SA060

Outline Drawings, mm

保守移行機種

Not recommend for new design.

http://store.iiic.cc/