PN2907A PZT2907A MMBT2907A C C E E C B TO-92 B B SOT-23 E C SOT-223 Mark: 2F NMT2907 MMPQ2907 E B E B E B SOIC-16 B E C2 E1 C1 C C C C C C C C B2 E2 SOT-6 B1 Mark: 200 PNP General Purpose Amplifier This device is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. Sourced from Process 63. Absolute Maximum Ratings* Symbol TA = 25C unless otherwise noted Parameter Value Units VCEO Collector-Emitter Voltage 60 V VCBO Collector-Base Voltage 60 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current - Continuous 800 mA TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES : 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. PN2907A / MMBT2907A / MMPQ2907 / NMT2907 / PZT2907A N Discrete POWER & Signal Technologies (continued) Electrical Characteristics Symbol TA = 25C unless otherwise noted Parameter Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO Collector-Emitter Breakdown Voltage* IC = 10 mA, IB = 0 60 V V(BR)CBO Collector-Base Breakdown Voltage IC = 10 A, IE = 0 60 V V(BR)EBO Emitter-Base Breakdown Voltage IE = 10 A, IC = 0 5.0 IB Base Cutoff Current VCB = 30 V, VEB = 0.5 V 50 nA ICEX Collector Cutoff Current VCE = 30 V, VBE = 0.5 V 50 nA ICBO Collector Cutoff Current VCB = 50 V, IE = 0 VCB = 50 V, IE = 0, TA = 150C 0.02 20 A A V ON CHARACTERISTICS hFE DC Current Gain VCE(sat) Collector-Emitter Saturation Voltage* VBE(sat) Base-Emitter Saturation Voltage SMALL SIGNAL CHARACTERISTICS fT Current Gain - Bandwidth Product Cobo Output Capacitance Cibo Input Capacitance SWITCHING CHARACTERISTICS IC = 0.1 mA, VCE = 10 V IC = 1.0 mA, VCE = 10 V IC = 10 mA, VCE = 10 V IC = 150 mA, VCE = 10 V* IC = 500 mA, VCE = 10 V* IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA IC = 150 mA, IB = 15 mA* IC = 500 mA, IB = 50 mA 75 100 100 100 50 300 0.4 1.6 1.3 2.6 V V V V (except MMPQ2907 and NMT2222) IC = 50 mA, VCE = 20 V, f = 100 MHz VCB = 10 V, IE = 0, f = 100 kHz VEB = 2.0 V, IC = 0, f = 100 kHz 200 MHz 8.0 pF 30 pF ns (except MMPQ2907 and NMT2222) ton Turn-on Time VCC = 30 V, IC = 150 mA, 45 td Delay Time IB1 = 15 mA 10 ns tr Rise Time 40 ns toff Turn-off Time VCC = 6.0 V, IC = 150 mA 100 ns ts Storage Time IB1 = IB2 = 15 mA 80 ns tf Fall Time 30 ns *Pulse Test: Pulse Width 300 s, Duty Cycle 2.0% Spice Model PNP (Is=650.6E-18 Xti=3 Eg=1.11 Vaf=115.7 Bf=231.7 Ne=1.829 Ise=54.81f Ikf=1.079 Xtb=1.5 Br=3.563 Nc=2 Isc=0 Ikr=0 Rc=.715 Cjc=14.76p Mjc=.5383 Vjc=.75 Fc=.5 Cje=19.82p Mje=.3357 Vje=.75 Tr=111.3n Tf=603.7p Itf=.65 Vtf=5 Xtf=1.7 Rb=10) PN2907A / MMBT2907A / MMPQ2907 / NMT2907 / PZT2907A PNP General Purpose Amplifier (continued) Thermal Characteristics Symbol PD TA = 25C unless otherwise noted Characteristic Max RJC Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Case RJA Thermal Resistance, Junction to Ambient Symbol PD PN2907A 625 5.0 83.3 *PZT2907A 1,000 8.0 200 125 Characteristic mW mW/C C/W C/W Max **MMBT2907A 350 2.8 357 Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Ambient Effective 4 Die Each Die RJA Units Units MMPQ2907 1,000 8.0 mW mW/C C/W C/W C/W 125 240 2 *Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm . **Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." Typical Pulsed Current Gain vs Collector Current Collector-Emitter Saturation Voltage vs Collector Current 0.5 500 = 10 V CE = 5V 400 0.4 125 C 0.3 300 25 C 200 100 0 0.1 25 C 0.2 0.3 1 3 10 30 100 I C - COLLECTOR CURRENT (mA) 125 C 0.1 - 40 C 300 CESAT h FE - TYPICAL PULSED CURRENT GAIN Typical Characteristics 0 - 40 C 1 10 100 I C - COLLECTOR CURRENT (mA) Pr63 500 PN2907A / MMBT2907A / MMPQ2907 / NMT2907 / PZT2907A PNP General Purpose Amplifier (continued) (continued) Base-Emitter Saturation Voltage vs Collector Current 1 - 40 C 0.8 25 C 0.6 125 C 0.4 = 10 0.2 0 1 10 100 I C- COLLECTOR CURRENT (mA) 500 VBEON - BASE EMITTER ON VOLTAGE (V) VBESAT- BASE EMITTER VOLTAGE (V) Typical Characteristics Base Emitter ON Voltage vs Collector Current 1 0.8 - 40 C 25 C 0.6 125 C 0.4 V CE = 5V 0.2 0 0.1 1 10 I C - COLLECTOR CURRENT (mA) 25 Pr63 Input and Output Capacitance vs Reverse Bias Voltage 100 20 V CB= 35V CAPACITANCE (pF) ICBO- COLLECTOR CURRENT (nA) Collector-Cutoff Current vs. Ambient Temperature 10 1 0.1 0.01 25 50 75 100 T A- AMBIENT TEMPERATURE ( C) 16 12 C ib 8 4 0 0.1 125 Pr63 Switching Times vs Collector Current 250 I B1= I B2= 500 Ic I B1= I B2= 10 400 V cc = 15 V ts 150 100 tr tf 50 50 Ic 10 V cc = 15 V 300 200 t off 100 td 0 10 1 10 REVERSE BIAS VOLTAGE (V) Turn On and Turn Off Times vs Collector Current TIME (nS) TIME (nS) 200 C ob t on 100 I C - COLLECTOR CURRENT (mA) Pr63 1000 0 10 100 I C - COLLECTOR CURRENT (mA) 1000 PN2907A / MMBT2907A / MMPQ2907 / NMT2907 / PZT2907A PNP General Purpose Amplifier (continued) (continued) Rise Time vs Collector and Turn On Base Currents Power Dissipation vs Ambient Temperature 1 50 PD - POWER DISSIPATION (W) I B1 - TURN 0N BASE CURRENT (mA) Typical Characteristics 20 SOT-223 0.75 10 t r = 15 V 5 30 ns 0.5 SOT-23 0.25 2 60 ns 1 10 TO-92 100 I C - COLLECTOR CURRENT (mA) 0 500 0 25 Pr63 50 75 100 o TEMPERATURE ( C) Test Circuits 30 V 200 1.0 K 0 - 16 V 50 200ns FIGURE 1: Saturated Turn-On Switching Time Test Circuit - 6.0 V 15 V 1 K 37 1.0 K 0 - 30 V 50 200ns FIGURE 2: Saturated Turn-Off Switching Time Test Circuit 125 150 PN2907A / MMBT2907A / MMPQ2907 / NMT2907 / PZT2907A PNP General Purpose Amplifier