4PS2090E 11/16/09
PI74LCX16374
3.3V 16-BIT REGISTER (3-STATE)
Capacitance
Parameters Description Test Conditions Typ. Units
CIN Input Capacitance VDD = Open, VI = 0V or VDD 3
pFCOUT Output Capacitance VDD = 3.3V, VI = 0V or VDD 3
CPD Power Dissipation Capacitance VDD = 3.3V, VI = 0V or VDD, F = 10 MHz 20
DC Electrical Characteristics (Over the Operating Range, TA = –40°C to +85°C, VDD = 2.7V to 3.6V)
Parameters Description Test Conditions(1) Min. Typ.(2) Max. Units
VIH Input HIGH Voltage Guaranteed Logic HIGH Level 2.0
V
VIL Input LOW Voltage Guaranteed Logic LOWLevel 0.8
VOH Output HIGH Voltage
VDD = 2.7 - 3.6 IOH = -0.1mA VDD -0.2
VDD = 2.7 IOH = -12mA 2.2
VDD = 3.0 IOH = -18mA 2.4
IOH = -24mA 2.2
VOL Output LOW Voltage
VDD =2.7 - 3.6 IOL = 0.1mA 0.2
VDD = 2.7 IOL = 12mA 0.4
VDD = 3.0 IOL = 16mA 0.4
IOL = 24mA 0.55
VIK Clamp Dioide Voltage VDD = Min., IIN = -18mA -0.7 -1.2
IIInput Leakage Current 0 ≤ VI ≤ 5.5V VDD = 2.7 -3.6 ±5
μA
IOZ Tri-State Output Leakage 0 ≤ VO ≤ 5.5V
VI = VIH or VIL
VDD = 2.7 -3.6 ±5
IOFF Power Down Disable VDD = 0V, VIN or VOUT ≤ 5.5V 10
IDD Quiescent Power supply current VDD = Max. VIN = GND or VDD 0.1 10
∆IDD
Quiescent Power supply current
TTL Inputs High VDD = Max. VIN = VDD =0.6V(3) 500
Notes:
1. For Max. or Min. conditions, use appropriate value specifi ed under Electrical Characteristics for the applicable device type.
2. Typical values are at VDD = 3.3V, +25°C ambient.
3. Per TTL driven input; all other inputs at VDD or GND.