2SD1410A
2009-12-21
1
TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington)
2SD1410A
High Voltage Switching Applications
High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 2 A)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Symbol Rating Unit
Collector-base voltage VCBO 300 V
Collector-emitter voltage VCEO 250 V
Emitter-base voltage VEBO 5 V
Collector current IC 6 A
Base current IB 1 A
Ta = 25°C 2.0
Collector power
dissipation Tc = 25°C
PC
25
W
Junction temperature Tj 150 °C
Storage temperature range Tstg 55 to 150 °C
Note1: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Equivalent Circuit
Unit: mm
JEDEC
JEITA
TOSHIBA 2-10R1A
Weight: 1.7 g (typ.)
Base
Emitter
Collecto
r
Industrial Applications
≈ 4 kΩ
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2SD1410A
2009-12-21
2
Electrical Characteristics (Ta = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Collector cut-off current ICBO V
CB = 300 V, IE = 0 0.5 mA
Emitter cut-off current IEBO V
EB = 5 V, IC = 0 0.5 mA
Collector-emitter breakdown voltage V (BR) CEO IC = 10 mA, IB = 0 250 V
hFE (1) V
CE = 2 V, IC = 2 A 2000
DC current gain
hFE (2) V
CE = 2 V, IC = 4 A 200
Collector-emitter saturation voltage VCE (sat) IC = 4 A, IB = 0.04 A 2.0 V
Base-emitter saturation voltage VBE (sat) I
C = 4 A, IB = 0.04 A 2.5 V
Collector output capacitance Cob V
CB = 50 V, IE = 0, f = 1 MHz 30 pF
Turn-on time ton 1
Storage time tstg 8
Switching time
Fall time tf
IB1 = 0.04 A,IB2 = 0.04 A
duty cycle 1%
5
μs
Marking
Note2: A line under a Lot No. identifies the indication of product Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS
compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27
January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment.
Lot No.
Note2
D1410A
Part No. (or abbreviation code)
IB1
20 μs
VCC = 100 V
Output
25 Ω
IB2
IB1
Input
IB2
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2SD1410A
2009-12-21
3
Collector
emitter voltage VCE (V)
Collectoremitter voltage VCE (V)
IC – VCE
Collector current IC (A)
Collector current IC (A)
hFE – IC
DC current gain hFE
Safe operating area
Collector current IC (A)
10000
0.03 0.3 1 10
300
3000
5000
0.1
500
Common emitter
VCE = 2 V
1000
100
25
55
Tc = 100°C
3
Collector current IC (A)
VBE (sat) – IC
Baseemitter saturation voltage
VBE (sat) (V)
Collector current IC (A)
VCE (sat) – IC
Collectoremitter saturation voltage
VCE (sat) (V)
0.05
10
Common emitter
IC/IB = 100
1 10
5
0.2
1
25
100
Tc = 55°C
3
0.5
0.1 0.3 3
0
0
Common emitter
Tc = 2 5 ° C
IB = 0.2 mA
6
2
3
4
5
1 2 3 4 8
1
20 10
0.5
2
1
0
5 6 7
7
5
3
0.05
3 10 30 100
0.01
IC max (Pulse)*
IC max
DC operation
(Tc = 25°C)
500 μs*
1 ms*
VCEO max
300
0.3
0.5
1
5
10
20
0.03
0.1
(Continuous)
10 ms*
100 ms*
0.05
10
Common emitter
IC/IB = 100
1 10
5
0.2
1
25
100
Tc = 55°C
3
0.5
0.1 0.3 3
*: Single nonrepetitive pulse
Tc = 2 5 ° C
Curves must be derated linearly
with increase in temperature.
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2SD1410A
2009-12-21
4
RESTRICTIONS ON PRODUCT USE
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all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes
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