1N5624GP thru 1N5627GP
Document Number 88524
14-Oct-05
Vishay General Semiconductor
www.vishay.com
1
DO-201AD
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t
e
n
t
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d
*
®
* Glass-plastic encapsulation
technique is covered by
Patent No. 3,996,602, and
brazed-lead assembly by
Patent No. 3,930,306
Glass Passivated Junction Rectifier
Major Ratings and Characteristics
IF(AV) 3.0 A
VRRM 200 V to 800 V
IFSM 125 A
IR5.0 µA
VF0.95 V
Tj max. 175 °C
Features
• Superectifier structure for High Reliability
application
• Cavity-free glass-passivated junction
• Low forward voltage drop
• Low leakage current
• High forward surge capability
• Meets environmental standard MIL-S-19500
• Solder Dip 260 °C, 40 seconds
Typical Applications
For use in general purpose rectification of power sup-
plies, inverters, converters and freewheeling diodes
application
Mechanical Data
Case: DO-201AD, molded epoxy over glass body
Epoxy meets UL-94V-0 Flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade, HE3 suffix for high
reliability grade (AEC Q101 qualified)
Polarity: Color band denotes cathode end
Maximum Ratings
(TA = 25 °C unless otherwise noted)
Parameter Symbol 1N5624GP 1N5625GP 1N5626GP 1N5627GP Unit
* Maximum repetitive peak reverse voltage VRRM 200 400 600 800 V
* Maximum DC blocking voltage VDC 200 400 600 800 V
* Maximum average forward rectified current
0.375” (9.5 mm) lead length at TA = 70 °C
IF(AV) 3.0 A
* Peak forward surge current 8.3 ms single half sine-
wave superimposed on rated load
IFSM 125 A
Maximum full load reverse current, full cycle average
0.375” (9.5 mm) lead length at TA = 70 °C
IR(AV) 200 µA
* Operating junction and storage temperature range TJ, TSTG - 65 to + 175 °C