2N2405 Silicon NPN Transistor General Purpose, Medium Power TO-39 Type Package Description: The 2N2405 is a silicon NPN transistor in a TO-39 type package designed for use in high current, fast switching applications and for power amplifiers. Features: D For Operation at Junction Temperature up to +200C D Planar Construction fo Low Noise and Low Leakage D Low Output Capacitance Absolute Maximum Ratings: Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90V Emitter-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V Collector-Emitter Sustaining Voltage, VCER . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 140V Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A Total Power Dissipation, PT TC +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5W TA +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +200C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +200C Thermal Resistance, Junction-to-Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35C/W Thermal Resistance, Junction-to-Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 175C/W Electrical Characteristics: (TC = +25C unless otherwise specified) Parameter Collector-Emitter Sustaining Voltage Symbol Test Conditions VCEO(sus) IC = 30mA, IB = 0 IC = 100mA, IB = 0 VCER(sus) IC = 100mA, RBE = 10, Note 1 IC = 100mA, RBE = 500, Note 1 Min Typ Max Unit 90 - - V 90 - - V 140 - - V 120 - - V Collector-Base Breakdown Voltage V(BR)CBO IC = 0.1mA, IE = 0, Note 1 120 - - V Emitter-Base Breakdown Voltage V(BR)EBO IC = 0.1mA, IC = 0, Note 1 7 - - V VCB = 90V, IE = 0 - - 0.01 A VCB = 90V, IE = 0, TC = +150C - - 10 A VBE = -5V, IC = 0 - - 0.01 A IC = 150mA, IB = 15mA - - 0.5 V IC = 50mA, IB = 5mA, - - 0.2 V IC = 150mA, IB = 15mA - - 1.1 V IC = 50mA, IB = 5mA - - 0.9 V Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage ICBO IEBO VCE(sat) VBE(sat) Note 1. Pulse Test: Pulse Duration = 300s, Duty Cycle 2%. Electrical Characteristics (Cont'd): (TC = +25C unless otherwise specified) Parameter Symbol DC Current Gain hFE Test Conditions Min Typ Max Unit IC = 10mA, VCE = 10V, Note 1 35 - - IC = 150mA, VCE = 10V, Note 1 60 - 200 IC = 10mA, VCE = 10V, TC = -55C, Note 1 20 - - VCE = 5V, IC = 5mA, f = 1kHz 50 275 - VCE = 10V, IC = 50mA, f = 20MHz 6 - - VCB = 5V, IC = 1mA, f = 1KHz 24 34 - VCB = 10V, IC = 5mA, f = 1KHz 4 8 - Dynamic Characteristics Small-Signal Current Gain hfe hib hrb hob Output Capacitance Cobo Cib VCB = 5V, IC = 1mA, f = 1KHz - - 3x104 VCB = 10V, IC = 5mA, f = 1KHz - - 3x104 VCB = 5V, IC = 1mA, f = 1KHz - - 0.5 mho VCB = 10V, IC = 5mA, f = 1KHz - - 0.5 mho VCB = 10V, IE = 0 - - 15 pF VBE = -0.5V, IC = 0 - - 80 pF Note 1. Pulse Test: Pulse Duration = 300s, Duty Cycle 2%. .370 (9.39) Dia Max .355 (9.03) Dia Max .260 (6.6) Max .500 (12.7) Min .018 (0.45) Base Emitter Collector/Case 45 .031 (.793)