2N2405
Silicon NPN Transistor
General Purpose, Medium Power
TO−39 Type Package
Description:
The 2N2405 is a silicon NPN transistor in a TO−39 type package designed for use in high current,
fast switching applications and for power amplifiers.
Features:
DFor Operation at Junction Temperature up to +200C
DPlanar Construction fo Low Noise and Low Leakage
DLow Output Capacitance
Absolute Maximum Ratings:
Collector−Base Voltage, VCBO 120V......................................................
Collector−Emitter Voltage, VCEO 90V......................................................
Emitter−Base Voltage, VEBO 7V..........................................................
Collector−Emitter Sustaining Voltage, VCER 140V...........................................
Collector Current, IC1A.................................................................
Total Power Dissipation, PT
TC +25C 5W..................................................................
TA +25C 1W..................................................................
Operating Junction Temperature Range, TJ−65 to +200C..................................
Storage Temperature Range, Tstg −65 to +200C..........................................
Thermal Resistance, Junction−to−Case, RthJC 35C/W.....................................
Thermal Resistance, Junction−to−Ambient, RthJA 175C/W..................................
Electrical Characteristics: (TC = +25C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Collector−Emitter Sustaining Voltage VCEO(sus) IC = 30mA, IB = 0 90 − − V
IC = 100mA, IB = 0 90 − − V
VCER(sus) IC = 100mA, RBE = 10, Note 1 140 − − V
IC = 100mA, RBE = 500, Note 1 120 − − V
Collector−Base Breakdown Voltage V(BR)CBO IC = 0.1mA, IE = 0, Note 1 120 − − V
Emitter−Base Breakdown Voltage V(BR)EBO IC = 0.1mA, IC = 0, Note 1 7− − V
Collector Cutoff Current ICBO VCB = 90V, IE = 0 − − 0.01 A
VCB = 90V, IE = 0, TC = +150C− − 10 A
Emitter Cutoff Current IEBO VBE = −5V, IC = 0 − − 0.01 A
Collector−Emitter Saturation Voltage VCE(sat) IC = 150mA, IB = 15mA − − 0.5 V
IC = 50mA, IB = 5mA, − − 0.2 V
Base−Emitter Saturation Voltage VBE(sat) IC = 150mA, IB = 15mA − − 1.1 V
IC = 50mA, IB = 5mA − − 0.9 V
Note 1. Pulse Test: Pulse Duration = 300s, Duty Cycle 2%.
Electrical Characteristics (Cont’d): (TC = +25C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
DC Current Gain hFE IC = 10mA, VCE = 10V, Note 1 35 − −
IC = 150mA, VCE = 10V, Note 1 60 −200
IC = 10mA, VCE = 10V, TC = −55C,
Note 1
20 − −
Dynamic Characteristics
Small−Signal Current Gain hfe VCE = 5V, IC = 5mA, f = 1kHz 50 275 −
VCE = 10V, IC = 50mA, f = 20MHz 6− −
hib VCB = 5V, IC = 1mA, f = 1KHz 24 34 −
VCB = 10V, IC = 5mA, f = 1KHz 4 8 −
hrb VCB = 5V, IC = 1mA, f = 1KHz − − 3x104
VCB = 10V, IC = 5mA, f = 1KHz − − 3x104
hob VCB = 5V, IC = 1mA, f = 1KHz − − 0.5 mho
VCB = 10V, IC = 5mA, f = 1KHz − − 0.5 mho
Output Capacitance Cobo VCB = 10V, IE = 0 − − 15 pF
Cib VBE = −0.5V, IC = 0 − − 80 pF
Note 1. Pulse Test: Pulse Duration = 300s, Duty Cycle 2%.
.260
(6.6)
Max
.500
(12.7)
Min
.370 (9.39) Dia Max
.355 (9.03) Dia Max
45
.031 (.793)
Emitter
Base
Collector/Case
.018 (0.45)
