PNP SILICON PLANAR MEDIUM POWER
HIGH GAIN TRANSISTOR
ISSUE 2  APRIL 94
FEATURES
* 40 Volt VCEO
* Gain of 200 at IC=1 Amps
* Very low saturation voltage
APPLICATIONS
* Darlington replacement
* Siren driver
* Battery powered circuits
* Motor drivers
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage VCBO -50 V
Collector-Emitter Voltage VCEO -40 V
Emitter-Base Voltage VEBO -5 V
Peak Pulse Current ICM -6 A
Continuous Collector Current IC-2 A
Practical Power Dissipation* Ptotp 1.5 W
Power Dissipation at Tamb
=25°C
derate above 25°C
Ptot 1
5.7
W
mW/°C
Operating and Storage Temperature Range Tj:Tstg -55 to +200 °C
*The power which can be dissipated assuming the device is mounted in a typical manner on a
P.C.B. with copper equal to 1 inch square minimum
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C)
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage
V(BR)CBO -50 V IC
=-100µA
Collector-Emitter Breakdown
Voltage
V(BR)CEO -40 V IC
=-10mA*
Emitter-Base Breakdown
Voltage
V(BR)EBO -5 V IE=-100µA
Collector Cut-Off Current ICBO -0.1 µAVCB=-30V
Emitter Cut-Off Current IEBO -0.1 µAVEB
=-4V
Collector-Emitter Saturation
Voltage
VCE(sat) -0.25
-0.45
-0.75
V
V
V
IC
=-500mA, IB
=-5mA*
IC
=-1A, IB
=-10mA*
IC
=-2A, IB
=-50mA*
Base-Emitter
Saturation Voltage
VBE(sat) -1.0 V IC
=-1A, IB
=-10mA*
Base-Emitter
Turn-On Voltage
VBE(on) -0.75 V IC=-1A, VCE
=-2V*
Static Forward Current
Transfer Ratio
hFE 300
250
200
150
800 IC
=-10mA, VCE=-2V
IC
=-500mA, VCE=-2V*
IC
=-1A, VCE=-2V*
IC
=-2A, VCE=-2V*
E-Line
TO92 Compatible
ZTX790A
3-279
C
B
E
ELECTRICAL CHARACTERISTICS (at Tamb
= 25°C)
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Transition Frequency fT100 MHz IC
=-50mA, VCE
=-5V
f=50MHz
Input Capacitance Cibo 225 pF VEB
=-0.5V, f=1MHz
Output Capacitance Cobo 24 pF VCB
=-10V, f=1MHz
Switching Times ton
toff
35
600
ns
ns
IC
=-500mA, IB1=-50mA
IB2=-50mA, VCC
=-10V
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle 2%
THERMAL CHARACTERISTICS
PARAMETER SYMBOL MAX. UNIT
Thermal Resistance: Junction to Ambient1
Junction to Ambient2
Junction to Case
Rth(j-amb)1
Rth(j-amb)2
Rth(j-case)
175
116
70
°C/W
°C/W
°C/W
Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum.
ZTX790A
-40 0.0001
Derating curve
T -Temperature (°C)
Max Power Dissipation
- (Watts)
Maximum transient thermal impedance
Pulse Width (seconds)
Thermal Resistance (°C/W)
10 10010.10.01-20 0 20 40 60 80 100 120 200180160140 0.001
0
100
200
D=0.2
D=0.1
Single Pul se
D=0.5
t
1
t
P
D=t
1
/t
P
1.0
0.5
2.0
1.5
Case temperature
2.5
Ambient temperature
0
D=1 (D.C.)
3-280
PNP SILICON PLANAR MEDIUM POWER
HIGH GAIN TRANSISTOR
ISSUE 2  APRIL 94
FEATURES
* 40 Volt VCEO
* Gain of 200 at IC=1 Amps
* Very low saturation voltage
APPLICATIONS
* Darlington replacement
* Siren driver
* Battery powered circuits
* Motor drivers
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage VCBO -50 V
Collector-Emitter Voltage VCEO -40 V
Emitter-Base Voltage VEBO -5 V
Peak Pulse Current ICM -6 A
Continuous Collector Current IC-2 A
Practical Power Dissipation* Ptotp 1.5 W
Power Dissipation at Tamb
=25°C
derate above 25°C
Ptot 1
5.7
W
mW/°C
Operating and Storage Temperature Range Tj:Tstg -55 to +200 °C
*The power which can be dissipated assuming the device is mounted in a typical manner on a
P.C.B. with copper equal to 1 inch square minimum
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C)
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage
V(BR)CBO -50 V IC
=-100µA
Collector-Emitter Breakdown
Voltage
V(BR)CEO -40 V IC
=-10mA*
Emitter-Base Breakdown
Voltage
V(BR)EBO -5 V IE=-100µA
Collector Cut-Off Current ICBO -0.1 µAVCB=-30V
Emitter Cut-Off Current IEBO -0.1 µAVEB
=-4V
Collector-Emitter Saturation
Voltage
VCE(sat) -0.25
-0.45
-0.75
V
V
V
IC
=-500mA, IB
=-5mA*
IC
=-1A, IB
=-10mA*
IC
=-2A, IB
=-50mA*
Base-Emitter
Saturation Voltage
VBE(sat) -1.0 V IC
=-1A, IB
=-10mA*
Base-Emitter
Turn-On Voltage
VBE(on) -0.75 V IC=-1A, VCE
=-2V*
Static Forward Current
Transfer Ratio
hFE 300
250
200
150
800 IC
=-10mA, VCE=-2V
IC
=-500mA, VCE=-2V*
IC
=-1A, VCE=-2V*
IC
=-2A, VCE=-2V*
E-Line
TO92 Compatible
ZTX790A
3-279
C
B
E
ELECTRICAL CHARACTERISTICS (at Tamb
= 25°C)
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Transition Frequency fT100 MHz IC
=-50mA, VCE
=-5V
f=50MHz
Input Capacitance Cibo 225 pF VEB
=-0.5V, f=1MHz
Output Capacitance Cobo 24 pF VCB
=-10V, f=1MHz
Switching Times ton
toff
35
600
ns
ns
IC
=-500mA, IB1=-50mA
IB2=-50mA, VCC
=-10V
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle 2%
THERMAL CHARACTERISTICS
PARAMETER SYMBOL MAX. UNIT
Thermal Resistance: Junction to Ambient1
Junction to Ambient2
Junction to Case
Rth(j-amb)1
Rth(j-amb)2
Rth(j-case)
175
116
70
°C/W
°C/W
°C/W
 Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum.
ZTX790A
-40 0.0001
Derating curve
T -Temperature (°C)
Max Power Dissipation
- (Watts)
Maximum transient thermal impedance
Pulse Width (seconds)
Thermal Resistance (°C/W)
10 10010.10.01-20 0 20 40 60 80 100 120 200180160140 0.001
0
100
200
D=0.2
D=0.1
Single Pul se
D=0.5
t
1
t
P
D=t
1
/t
P
1.0
0.5
2.0
1.5
Case temperature
2.5
Ambient temperature
0
D=1 (D.C.)
3-280
ZTX790A
D.C.
1s
100ms
10ms
1.0ms
0.1ms
0.01 0.1 1 10
0.8
0.6
0
1.6
0.01 0.1 1 10
0.01 0.1 1 10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
0.01 0.1 110
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
TYPICA L CHA RACTERISTICS
VCE(sat) v IC
IC - Collector Current (Amps)
V
CE(sat)
- (Volts)
VCE(sat) v IC
IC - Collector Current (Amps)
V
CE(sat)
- (Volts)
IC - Collector Current (Amps) IC - Collector Current (Amps)
hFE v IC V
BE(sat) v IC
IC - Collector Current (Amps)
VBE(on) v IC
h
FE
- Normalised Gain
V
BE
- (Volts)
I
C
- Collector Current (Amps)
750
500
250
h
FE
- Typical Gain
VCE - Collector Voltage (Volts)
Safe Ope r ating Area
0.1 100 1 10
0.01
0.1
1
10 Single Pulse Test at Tamb=25°C
Tamb=25°C -55°C
+25°C
+100°C
+175°C
0
0.01 0.1 1 10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
V
BE(sat)
- (Volts)
-55°C
+25°C
+100°C
+175°C
1.8
1.4
1.2
1.0
0.4
0.2
0.8
0.6
0
1.6
1.8
1.4
1.2
1.0
0.4
0.2
IC/IB=10
IC/IB=100
IC/IB=40 IC/IB=100
VCE=2V IC/IB=100
VCE=2V
-55°C
+25°C
+100°C
+100°C
+25°C
-55°C
3-281