Absolute Maximum Ratings ( TJ = 25°C unless otherwise specified )
Symbol Parameter Condition Ratings Units
VDRM Repetitive Peak Off-State Voltage 600 V
IT(AV) Average On-State Current Half Sine Wave : TC = 45 °C 1.0 A
IT(RMS) R.M.S On-State Current All Conduction Angle 1.5 A
ITSM Surge On-State Current 1/2 Cycle, 60Hz, Sine Wave
Non-Repetitive 15 A
I2tI2t for Fusing t = 8.3ms 0.9 A2s
PGM Forward Peak Gate Power Dissipation TA=25°C, Pulse Width ≤ 1.0㎲0.5 W
PG(AV) Forward Average Gate Power Dissipation TA=25°C, t = 8.3ms 0.1 W
IFGM Forward Peak Gate Current 0.2 A
VRGM Reverse Peak Gate Voltage 5.0 V
TJOperating Junction Temperature - 40 ~ 125 °C
TSTG Storage Temperature - 40 ~ 150 °C
MCR22-8
Nov, 2003. Rev. 0
Features
◆ Repetitive Peak Off-State Voltage : 600V
◆ R.M.S On-State Current ( IT(RMS)= 1.5 A )
◆ Low On-State Voltage (1.2V(Typ.)@ITM)
General Description
Sensitive triggering SCR is suitable for the application where
gate current limited such as small motor control, gate driver
for large SCR, sensing and detecting circuits.
2. Gate
1. Cathode
Symbol
○
○
▼
1/5
SemiWell Semiconductor
Sensitive Gate
Silicon Controlled Rectifiers
TO-92
○
3. Anode
Copyright@SemiWell Semiconductor Co., Ltd., All rights are reserved.
Preliminary
Electrical Characteristics ( TC = 25 °C unless otherwise noted )
Symbol Items Conditions
Ratings
Unit
Min. Typ. Max.
IDRM Repetitive Peak Off-State
Current
VAK = VDRM or VRRM ; RGK = 1000 Ω
TC = 25 °C
TC = 125 °C ─
─
─
─
10
200 ㎂
VTM Peak On-State Voltage (1) ( ITM =3 A, Peak ) ─1.2 1.7 V
IGT Gate Trigger Current (2) VAK = 6 V, RL=100 Ω
TC = 25 °C
TC = - 40 °C ─
─
─
─
200
500 ㎂
VGT Gate Trigger Voltage (2) VD = 7 V, RL=100 Ω
TC = 25 °C
TC = - 40 °C ─
─
─
─
0.8
1.2 V
VGD Non-Trigger Gate Voltage (1) VAK = 12 V, RL=100 Ω TC = 125 °C 0.2 ── V
dv/dt Critical Rate of Rise Off-State
Voltage
VGM = 0.67VDRM,
Exponential waveform , RGK = 1000 Ω
TJ = 125 °C 200 ──
V/㎲
di/dt Critical Rate of Rise On-State
Current ITM = 3A, Ig = 10mA 50 A/㎲
IHHolding Current VAK = 12 V, Gate Open
TC = 25 °C
TC = - 40 °C ─
─
2
─
5.0
10 mA
Rth(j-c) Thermal Impedance Junction to case ──
50 °C/W
Rth(j-a) Thermal Im pedance Junction to Ambient ──
160 °C/W
MCR22-8
2/5
※ Notes :
1. Pulse Width ≤ 1.0 ms , Duty cycle ≤ 1%
2. Does not include RGK in measurement.
-50 0 50 100 150
0.3
0.6
0.9
1.2
1.5
VGT (t oC)
VGT (25 oC)
Junction Temperature [ oC]
-50 0 50 100 150
0.0
0.5
1.0
1.5
2.0
IGT (t oC)
IGT (25 oC)
Junction Temperature [ oC]
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
0
20
40
60
80
100
120
140
θ= 180
o
Max. Allowable Case Temperature [ oC]
Average On-State Current [A]
10-1 100101102103
10-1
100
101
VGD(0.2V)
25 ℃
IGM (0.2A)
PG(AV) (0.1W)
PGM (0.5W)
VGM (5V)
Gate Voltag e [ V]
G ate C urren t [mA ]
0.1 1 10 100 1000 10000
0.01
0.1
1
Transient Thermal Impedance [Normalized]
Time (sec)
0.4 0.8 1.2 1.6 2.0 2.4
0.01
0.1
1
10
100
TJ = 25 oC
TJ = 125 oC
Instantaneous On-State Current [A]
Instantaneous On-State Voltage [V]
MCR22-8
3/5
Fig 1. Gate Characteristics Fig 2. Maximum Case Temperature
Fig 3. Typical Forward Voltage Fig 4. Thermal Response
θ
: Conduction Angle
360°
θ
2
ππ
Fig 6. Typical Gate Trigger Current vs.
Junction Temperature
Fig 5. Typical Gate Trigger Voltage vs.
Junction Temperature
0.0 0.2 0.4 0.6 0.8 1.0 1.2
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
θ= 30
o
θ= 90
o
θ= 60
o
θ= 180
o
θ= 120
o
Max. Average Power Dissipation [W]
Average On-S tate Current [A]
-40 -20 0 20 40 60 80 100 120 140
1
2
3
4
5
6
7
8
9
10
Holding Current [m A]
Junction Temperature [ ]℃
4/5
MCR22-8
Fig 8. Power Dissipation
Fig 7. Typical Holding Current
Dim. mm Inch
Min. Typ. Max. Min. Typ. Max.
A 4.2 0.165
B 3.7 0.146
C 4.43 4.83 0.174 0.190
D 14.07 14.87 0.554 0.585
E 0.4 0.016
F 4.43 4.83 0.174 0.190
G 0.45 0.017
H2.54 0.100
I2.54 0.100
J 0.33 0.48 0.013 0.019
TO-92 Package Dimension
1. Cathode
2. Gate
3. Anode
A
B
C
G
E
F
D
5/5
MCR22-8
HJ
1
2
3
I
