Dual Pico Amp Diodes
DP AD1 / DP AD2 / DP AD5 / DP AD10 / DPAD20 / DPAD50 / DPAD100
SSTDP AD5 / SSTDP AD10 / SSTDP AD20 / SSTDPAD50 / SSTDP AD100
FEATURES
••High OFF Isolation. . . . . . . . . . . . . . . . . 1 pA max DPAD1
••Excellent Isolation between diodes. . . . . . Typical 20 fA
••Matche d Capacitanc e
APPLICATIONS
••Op Amp Protection Devices
••Diode Switching
••High I m peda nce Protection
DESCRIPTION
Calogic’s ultra l ow leakage dual pi co amp diodes out pe rform
conventional diodes for applications where reverse current
(leakage) is critical and must be kept at a minimum. The
devices have very low capacitance and are also fast
sw itc hing. Housed in a compact dual hermetic package and a
plastic surface mount SO-8 this product is also available in
chip f orm for h ybrid us es .
ORDERING INFORMATI ON
Part Pac ka ge T em perature Range
DPAD1 Hermetic T O-78 -55 to +150oC
DPAD2 /50 Hermetic T O-71 -55 to +150oC
SSTDPAD5/100 Plastic SO-8 -55 to +150oC
XDPAD5/100 Sorted Chips in Carriers -55 to +150oC
CORPORATION
SCHEMATIC DIAGRAM
TO-71
(MODIFIED)
(PINS 2 AND
6 REMOVED)
A
1
A
2
C
2
C
1
CC
1
C
2
A
1
A
2
TO-78
(MODIFIED)
(DPAD1 ONLY)
A
CA
C
BOTTOM VIEW
(ALTERNATE)
1
A
1
C
1
A
2
C
2
23
4
1
A
1
C
1
A
2
C
2
C
BOTTOM VIEW
CASE
2
5
4
3
PIN CONFI G U RAT ION
SO-8
C1
A1 N/C
C2
A2
C1
N/C
C2
CJ1, CJ2, CJ4
DPAD1 / DPAD2 / DPAD5 / DPAD10 / DPAD20 / DPAD50 / DPAD100
SSTDPAD5 / SSTDPAD10 / SSTDPAD20 / SSTDPAD50 / SSTDPAD100
CORPORATION
ABSOLUTE M AXIMUM R ATI NGS (25oC)
Forward Gate Current, Each Side. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA
Total D e vice D issipation @ TA = 25oC
Derate 4.0 mW/
oC to 125oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400 mW
Stor age Temperat ur e Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . - 55 to +125oC
Lead Tem per atur e (1/1 6" from cas e f or 10 sec onds ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300oC
ELECTRICAL CHARACTERISTICS (25oC un less other wise noted )
SYMBOL CHARACTERISTICS MIN TYP MAX UNIT TEST CONDITIONS
STATIC
IRReverse Current
-1
pA VR = -20 V
DPAD1
-2 DPAD2
-5 DPAD5
-10 DPAD10
-20 DPAD20
-50 DPAD50
-100 DPAD100
BVRBreakdown Voltage (Reverse) -45 -120
VIR = -1µADPAD1, 2, 5
-35 DPAD10, 20, 50, 100
VFForward Voltage Drop 0.8 1.5 IF = 5 mA DPAD1, 2, 5, 10, 20, 50, 100
DYNAMIC
CRCapacitance 0.8 pF VR = -5 V, f = 1 MHz DPAD1, 2, 5
2.0 DPAD10, 20, 50, 100
| CR1 - CR2 | Differenti al Capacita nce 0 .1 0.2 pF VR1 = VR2 = -5 V, f = 1 MHz DPAD1, 2, 5, 10, 20, 50, 100
APPLICATION
Operati onal Amplifier Protecti on. Input Di fferential Voltage
limited to 0.8 V (typ) by DPADS D1 and D2 Common mode
input v olt age limit ed by DPADS D3 and D4 to ±15V.
Typical sample and hold circuit with clipping, DPAD diodes
reduce offset voltages fed capacitively from the FET switch
gate.
DPAD10
D
1
D
4
+1
-15V
+15V
_
D
2
D
3
I < 1 pA
R
+V -V
DPAD1
V
OUT
C
CONTROL SIGNAL
e
in
+
DPAD1
J110
J210
