S-8213 Series
www.sii-ic.com
BATTERY PROTECTION IC FOR 2-SERIAL / 3-SERIAL CELL PACK
(SECONDARY PROTECTION)
© Seiko Instruments Inc., 2012-2013 Rev.1.1_00
Seiko Instruments Inc. 1
The S-8213 Series is used for secondary protection of lithium-ion rechargeable batteries, and incorporates a high-accuracy
voltage detection circuit and a delay circuit. Short-circuits between VC3 to VSS accommodate serial connection of two cells or
three cells.
Features
• High-accuracy voltage detection circuit for each cell
Overcharge detection voltage n (n = 1 to 3)
4.10 V to 4.50 V (in 50 mV steps)
Accuracy: ±25 mV (Ta = +25°C)
Accuracy: ±30 mV (Ta = 0°C to +60°C)
Overcharge hysteresis voltage n (n = 1 to 3)
0 V ± 25 mV, −0.05 V ± 25 mV, −0.40 V ± 80 mV
• Delay times for overcharge detection can be set by an internal circuit only (external capacitors are unnecessary)
• Output logic is selectable: Active "H", Active "L"
• High withstand voltage devices: Absolute maximum rating 26 V
• Wide operating voltage range: 3.6 V to 24 V
• Wide operating temperature range: Ta = −40°C to +85°C
• Low current consumption
At VCUn − 1.0 V for each cell: 2.0 μA max. (Ta = +25°C)
At 2.0 V for each cell: 0.3 μA max. (Ta = +25°C)
• Lead-free (Sn 100%), halogen-free*1
*1. Refer to " Product Name Structure" for details.
Application
• Lithium-ion rechargeable battery pack (for secondary protection)
Packages
• SOT-23-6
• SNT-6A
BATTERY PROTECTION IC FOR 2-SERIAL / 3-SERIAL CELL PACK
(SECONDARY PROTECTION)
S-8213 Series Rev.1.1_00
Seiko Instruments Inc.
2
Block Diagram
VSS
VC3
VC2
−
+
CO
−
+
−
+
VC1
VDD
Overcharge
detection
com
p
arator 1
Overcharge
detection
com
p
arator 2
Overcharge
detection
comparator 3
Reference voltage 1
Reference voltage 2
Reference voltage 3
Oscillator
Overcharge
detection
/
release
delay circuit
Control
logic
Remark The diodes in the figure are parasitic diodes.
Figure 1
BATTERY PROTECTION IC FOR 2-SERIAL / 3-SERIAL CELL PACK
(SECONDARY PROTECTION)
Rev.1.1_00 S-8213 Series
Seiko Instruments Inc. 3
Product Name Structure
1. Product Name
S-8213 xxx - xxxx U
Package abbreviation and IC packing specifications*1
M6T1: SOT-23-6, Tape
I6T1: SNT-6A, Tape
Serial code*2
Sequentially set from AAA to AAZ
Environmental code
U: Lead-free (Sn 100%), halogen-free
*1. Refer to the tape drawing.
*2. Refer to "3. Product Name List".
2. Packages
Table 1 Package Drawing Codes
Package Name Dimension Tape Reel Land
SOT-23-6 MP006-A-P-SD MP006-A-C-SD MP006-A-R-SD −
SNT-6A PG006-A-P-SD PG006-A-C-SD PG006-A-R-SD PG006-A-L-SD
3. Product Name List
3. 1 SNT-6A
Table 2
Product Name
Overcharge
Detection
Voltage [VCU]
Overcharge
Hysteresis
Voltage [VHC]
Overcharge
Detection
Delay Time [tCU]
Output Logic
S-8213AAB-I6T1U 4.300 V −0.40 V 2.0 s Active "H"
S-8213AAC-I6T1U 4.350 V −0.40 V 2.0 s Active "H"
S-8213AAD-I6T1U 4.400 V −0.40 V 2.0 s Active "H"
S-8213AAE-I6T1U 4.450 V −0.40 V 2.0 s Active "H"
S-8213AAF-I6T1U 4.500 V −0.40 V 2.0 s Active "H"
S-8213AAG-I6T1U 4.300 V −0.40 V 4.0 s Active "H"
S-8213AAH-I6T1U 4.350 V −0.40 V 4.0 s Active "H"
S-8213AAI-I6T1U 4.400 V −0.40 V 4.0 s Active "H"
S-8213AAJ-I6T1U 4.450 V −0.40 V 4.0 s Active "H"
S-8213AAK-I6T1U 4.500 V −0.40 V 4.0 s Active "H"
S-8213AAL-I6T1U 4.300 V −0.40 V 8.0 s Active "H"
S-8213AAM-I6T1U 4.350 V −0.40 V 8.0 s Active "H"
S-8213AAN-I6T1U 4.400 V −0.40 V 8.0 s Active "H"
S-8213AAO-I6T1U 4.450 V −0.40 V 8.0 s Active "H"
S-8213AAP-I6T1U 4.500 V −0.40 V 8.0 s Active "H"
Remark Please contact our sales department for the products with detection voltage value other than those specified
above.
BATTERY PROTECTION IC FOR 2-SERIAL / 3-SERIAL CELL PACK
(SECONDARY PROTECTION)
S-8213 Series Rev.1.1_00
Seiko Instruments Inc.
4
Pin Configurations
1. SOT-23-6
Table 3
Pin No. Symbol Description
1 VSS Input pin for negative power supply,
connection pin for negative voltage of battery 3
2 VC3 Connection pin for negative voltage of battery 2,
connection pin for positive voltage of battery 3
3 VC2 Connection pin for negative voltage of battery 1,
connection pin for positive voltage of battery 2
4 VC1 Connection pin for positive voltage of battery 1
5 VDD Input pin for positive power supply
132
546
Top view
Figure 2
6 CO Connection pin of charge control FET gate
2. SNT-6A
Table 4
Pin No. Symbol Description
1 CO Connection pin of charge control FET gate
2 VDD Input pin for positive power supply
3 VC1 Connection pin for positive voltage of battery 1
4 VC2 Connection pin for negative voltage of battery 1,
connection pin for positive voltage of battery 2
5 VC3 Connection pin for negative voltage of battery 2,
connection pin for positive voltage of battery 3
5
4
6
2
3
1
Top view
Figure 3
6 VSS Input pin for negative power supply,
connection pin for negative voltage of battery 3
BATTERY PROTECTION IC FOR 2-SERIAL / 3-SERIAL CELL PACK
(SECONDARY PROTECTION)
Rev.1.1_00 S-8213 Series
Seiko Instruments Inc. 5
Absolute Maximum Ratings
Table 5
(Ta = +25°C unless otherwise specified)
Item Symbol Applied Pin Absolute Maximum Rating Unit
Input voltage between VDD and VSS VDS VDD VSS − 0.3 to VSS + 26 V
Input pin voltage VIN VC1, VC2, VC3 VSS − 0.3 to VDD + 0.3 V
CO output pin voltage VCO CO VSS − 0.3 to VDD + 0.3 V
SOT-23-6 650*1 mW
Power dissipation
SNT-6A PD − 400*1 mW
Operation ambient temperature Topr − −40 to +85 °C
Storage temperature Tstg − −40 to +125 °C
*1. When mounted on board
[Mounted board]
(1) Board size: 114.3 mm × 76.2 mm × t1.6 mm
(2) Name: JEDEC STANDARD51-7
Caution The absolute maximum ratings are rated values exceeding which the product could suffer physical
damage. These values must therefore not be exceeded under any conditions.
0 50 100 150
800
0
Power Dissipation (PD) [mW]
Ambient Temperature (Ta) [°C]
SOT-23-6
400
600
200
SNT-6A
Figure 4 Power Dissipation of Package (When Mounted on Board)
BATTERY PROTECTION IC FOR 2-SERIAL / 3-SERIAL CELL PACK
(SECONDARY PROTECTION)
S-8213 Series Rev.1.1_00
Seiko Instruments Inc.
6
Electrical Characteristics
Table 6
(Ta = +25°C unless otherwise specified)
Item Symbol Condition Min. Typ. Max. Unit
Test
Circuit
DETECTION VOLTAGE
− VCU
− 0.025 VCU VCU
+ 0.025 V 1
Overcharge detection
voltage n (n = 1, 2, 3) VCUn
Ta = 0°C to +60°C*1 VCU
− 0.030 VCU VCU
+ 0.030 V 1
VHC = −0.40 V VHC
− 0.080 VHC VHC
+ 0.080 V 1
Overcharge hysteresis
voltage n (n = 1, 2, 3) VHCn
VHC = 0 V, −0.05 V VHC
− 0.025 VHC VHC
+ 0.025 V 1
INPUT VOLTAGE
Operating voltage between
VDD and VSS VDSOP − 3.6 − 24 V
−
INPUT CURRENT
Current consumption during
operation IOPE V1 = V2 = V3 = VCU − 1.0 V − − 2.0 μA 3
Current consumption during
overdischarge IPDN V1 = V2 = V3 = 2.0 V − − 0.3 μA 3
VC1 pin current IVC1 V1 = V2 = V3 = VCU − 1.0 V − − 0.3 μA 4
VC2 pin, VC3 pin current IVC2, IVC3 V1 = V2 = V3 = VCU − 1.0 V −0.3 0 0.3 μA 4
OUTPUT CURRENT
CO pin sink current ICOL −
0.4 − − mA 5
CO pin source current ICOH −
20 − − μA 5
DELAY TIME
Overcharge detection delay
time tCU −
tCU × 0.8 tCU tCU × 1.2 s 1
Transition time to test mode tTST −
− − 20 ms 2
*1. Since products are not screened at high and low temperature, the specification for this temperature range is guaranteed
by design, not tested in production.
BATTERY PROTECTION IC FOR 2-SERIAL / 3-SERIAL CELL PACK
(SECONDARY PROTECTION)
Rev.1.1_00 S-8213 Series
Seiko Instruments Inc. 7
Test Circuits
1. Overcharge detection voltage, overcharge hysteresis voltage
(Test circuit 1)
1. 1 Overcharge detection voltage n (VCUn)
Set V1 = V2 = V3 = VCU − 0.05 V. The Overcharge detection voltage 1 (VCU1) is the V1 voltage when the CO pin’s
output changes after the voltage of V1 has been gradually increased.
Overcharge detection voltage VCUn (n = 2, 3) can be determined in the same way as when n = 1.
1. 2 Overcharge hysteresis voltage n (VHCn)
Set V1 = VCU + 0.05 V, V2 = V3 = 2.5 V. The overcharge hysteresis voltage 1 (VHC1) is the difference between V1
voltage and VCU1 when the CO pin’s output changes after the V1 voltage has been gradually decreased.
Overcharge hysteresis voltage VHCn (n = 2, 3) can be determined in the same way as when n = 1.
2. Output current
(Test circuit 5)
Set SW1 and SW2 to OFF.
2. 1 Active "H"
2. 1. 1 CO pin source current (ICOH)
Set SW1 to ON after setting V1 = 5.5 V, V2 =V3 = 3.0 V, V4 = 0.5 V. I1 is the CO pin source current (ICOH) at that
time.
2. 1. 2 CO pin sink current (ICOL)
Set SW2 to ON after setting V1 to V3 = 3.5 V, V5 = 0.5 V. I2 is the CO pin sink current (ICOL) at that time.
2. 2 Active "L"
2. 2. 1 CO pin source current (ICOH)
Set SW1 to ON after setting V1 to V3 = 3.5 V, V4 = 0.5 V. I1 is the CO pin source current (ICOH) at that time.
2. 2. 2 CO pin sink current (ICOL)
Set SW2 to ON after setting V1 = 5.0 V, V2 = V3 = 3.0 V, V5 = 0.5 V. I2 is the CO pin sink current (ICOL) at that
time.
3. Overcharge detection delay time (tCU)
(Test circuit 1)
Increase V1 up to 5.0 V after setting V1 = V2 = V3 = 3.5 V. The overcharge detection delay time (tCU) is the time period
until the CO pin output changes.
4. Transition time to test mode (tTST)
(Test circuit 2)
Increase V4 up to 4.0 V, and decrease V4 again to 0 V after setting V1 = V2 = V3 = 3.5 V, and V4 = 0 V.
When the period from when V4 was raised to when it has fallen is short, if an overcharge detection operation is
performed subsequently, the delay time is tCU. However, when the period from when V4 is raised to when it has fallen is
gradually made longer, the delay time during the subsequent overcharge detection operation is shorter than tCU. The
transition time to test mode (tTST) is the period from when V4 was raised to when it has fallen at that time.
BATTERY PROTECTION IC FOR 2-SERIAL / 3-SERIAL CELL PACK
(SECONDARY PROTECTION)
S-8213 Series Rev.1.1_00
Seiko Instruments Inc.
8
V3
V1
V2
S-8213 Series
VDD
VC1
VC2
CO
VSS
VC3
V
V3
V1
V2
S-8213 Series
VDD
VC1
VC2
CO
VSS
VC3
V
V4
Figure 5 Test Circuit 1 Figure 6 Test Circuit 2
V3
V1
V2
VDD
VC1
VC2
CO
VSS
VC3
A
S-8213 Series
I
PDN
I
OPE
V1
V2
VDD
VC1
VC2
CO
VSS
VC3
A
I
VC1
A
A
S-8213 Series
V3
I
VC2
I
VC3
Figure 7 Test Circuit 3 Figure 8 Test Circuit 4
V4
V1
V2
SW2
SW1
VDD
VC1
VC2
CO
VSS
VC3
V5
V
A I1
A I2
S-8213 Series
V3
Figure 9 Test Circuit 5
BATTERY PROTECTION IC FOR 2-SERIAL / 3-SERIAL CELL PACK
(SECONDARY PROTECTION)
Rev.1.1_00 S-8213 Series
Seiko Instruments Inc. 9
Operation
Remark Refer to " Battery Protection IC Connection Examples".
1. Normal status
If the voltage of all the batteries is lower than "the overcharge detection voltage (VCUn) + the overcharge hysteresis
voltage (VHCn)", CO pin output changes to "L" (Active "H") or "H" (Active "L"). This is called normal status.
2. Overcharge status
When the voltage of one of the batteries exceeds VCUn during charging under normal conditions and the status is
retained for the overcharge detection delay time (tCU) or longer, CO pin output changes. This is called overcharge
status. Connecting FET to the CO pin provides charge control and a second protection.
If the voltage of all the batteries is lower than VCUn + VHCn and the status is retained for 2.0 ms typ. or longer, the S-8213
Series changes to normal status.
BATTERY PROTECTION IC FOR 2-SERIAL / 3-SERIAL CELL PACK
(SECONDARY PROTECTION)
S-8213 Series Rev.1.1_00
Seiko Instruments Inc.
10
3. Test mode
The overcharge detection delay time (tCU) can be shortened by entering the test mode.
The test mode can be set by retaining the VDD pin voltage 4.0 V or more higher than the VC1 pin voltage for 20 ms or
longer. The status is retained by the internal latch and the test mode is retained even if the VDD pin voltage is
decreased to the same voltage as that of the VC1 pin voltage.
After that, the latch for retaining the test mode is reset and the S-8213 Series exits from test mode under the overcharge
state.
VCUn
Pin voltage
CO pin
(Active "H")
Test mode
VDD pin voltage
4.0 V o
r
more
Battery voltage
VHCn
tTST = 20 ms max.
VC1 pin voltage
(n = 1 to 3)
32 ms typ.
CO pin
(Active "L")
2.0 ms typ.
Figure 10
BATTERY PROTECTION IC FOR 2-SERIAL / 3-SERIAL CELL PACK
(SECONDARY PROTECTION)
Rev.1.1_00 S-8213 Series
Seiko Instruments Inc. 11
Timing Charts
1. Overcharge detection operation
VCUn
Battery voltage
CO pin
(Active "H")
VHCn
(n = 1 to 3)
tCU
tCU or shorter
CO pin
(Active "L")
2.0 ms typ.
Figure 11
BATTERY PROTECTION IC FOR 2-SERIAL / 3-SERIAL CELL PACK
(SECONDARY PROTECTION)
S-8213 Series Rev.1.1_00
Seiko Instruments Inc.
12
Battery Protection IC Connection Examples
1. 3-serial cell
SC PROTECTOR
EB−
C1
C2
C3
EB+
R1
R2
R3
BAT1
BAT2
BAT3
FET
CVDD
RVDD
DP
VC1
VC2
VC3
VSS CO
VDD
S-8213
Series
Figure 12
Table 7 Constants for External Components
No. Part Min. Typ. Max. Unit
1 R1 to R3 0.2 1 2 kΩ
2 C1 to C3, CVDD 0.01 0.1 1 μF
3 RVDD 50 100 500 Ω
Caution 1. The above constants are subject to change without prior notice.
2. It has not been confirmed whether the operation is normal or not in circuits other than the above
example of connection. In addition, the example of connection shown above and the constant
will not guarantee successful operation. Perform thorough evaluation using the actual
application to set the constant.
3. Set the same constants to R1 to R3 and to C1 to C3 and CVDD.
4. Set RVDD, C1 to C3, and CVDD so that the condition (RVDD) × (C1 to C3, CVDD) ≥ 5 × 10−6 is satisfied.
5. Set R1 to R3, C1 to C3, and CVDD so that the condition (R1 to R3) × (C1 to C3, CVDD) ≥ 1 × 10−4 is
satisfied.
6. Since CO pin may become detection status transiently when the battery is being connected,
connect the positive terminal of BAT1 last in order to prevent the three terminal protection fuse
from cutoff.
BATTERY PROTECTION IC FOR 2-SERIAL / 3-SERIAL CELL PACK
(SECONDARY PROTECTION)
Rev.1.1_00 S-8213 Series
Seiko Instruments Inc. 13
2. 2-serial cell
SC PROTECTOR
EB−
C1
C2
EB+
R1
R2
BAT1
BAT2
FET
CVDD
RVDD
DP
VC3
VC1
VC2
CO
VDD
S-8213
Series
VSS
Figure 13
Table 8 Constants for External Components
No. Part Min. Typ. Max. Unit
1 R1, R2 0.2 1 2 kΩ
2 C1, C2, CVDD 0.01 0.1 1 μF
3 RVDD 50 100 500 Ω
Caution 1. The above constants are subject to change without prior notice.
2. It has not been confirmed whether the operation is normal or not in circuits other than the above
example of connection. In addition, the example of connection shown above and the constant
will not guarantee successful operation. Perform thorough evaluation using the actual
application to set the constant.
3. Set the same constants to R1, R2 and to C1, C2 and CVDD.
4. Set RVDD, C1, C2, and CVDD so that the condition (RVDD) × (C1, C2, CVDD) ≥ 5 × 10−6 is satisfied.
5. Set R1, R2, C1, C2, and CVDD so that the condition (R1, R2) × (C1, C2, CVDD) ≥ 1 × 10−4 is satisfied.
6. Since CO pin may become detection status transiently when the battery is being connected,
connect the positive terminal of BAT1 last in order to prevent the three terminal protection fuse
from cutoff.
BATTERY PROTECTION IC FOR 2-SERIAL / 3-SERIAL CELL PACK
(SECONDARY PROTECTION)
S-8213 Series Rev.1.1_00
Seiko Instruments Inc.
14
[For SC PROTECTOR, contact]
Advanced Device Sales Dept., Global Sales & Marketing Div., Dexerials Corporation
Gate City Osaki East Tower 8F, 1-11-2
Osaki, Shinagawa-ku, Tokyo, 141-0032 Japan
TEL +81-3-5435-3946
Contact Us: http://www.dexerials.jp/en/
Precautions
• Do not connect batteries charged with VCUn + VHCn or higher. If the connected batteries include a battery charged with
VCUn + VHCn or more, the S-8213 series may become overcharge status after all pins are connected.
• In some application circuits, even if an overcharged battery is not included, the order of connecting batteries may be
restricted to prevent transient output of CO detection pulses when the batteries are connected. Perform thorough
evaluation with the actual application circuit.
• Before the battery connection, short-circuit the battery side pins RVDD and R1, shown in the figure in " Battery
Protection IC Connection Examples".
• The application conditions for the input voltage, output voltage, and load current should not exceed the package power
dissipation.
• Do not apply to this IC an electrostatic discharge that exceeds the performance ratings of the built-in electrostatic
protection circuit.
• SII claims no responsibility for any disputes arising out of or in connection with any infringement of patents owned by a
third party by products including this IC.
BATTERY PROTECTION IC FOR 2-SERIAL / 3-SERIAL CELL PACK
(SECONDARY PROTECTION)
Rev.1.1_00 S-8213 Series
Seiko Instruments Inc. 15
Characteristics (Typical Data)
1. Detection voltage
1. 1 VCU vs. Ta
VCU = 4.3 V
1. 2 VCU + VHC vs. Ta
VHC = −0.4 V
Ta [°C]
4.40
4.20
4.25
4.30
4.35
−40 0 25 50−25 8575
VCU [V]
Ta [°C]
4.00
3.80
3.85
3.90
3.95
−40 0 25 50−25 8575
VCU
+
VHC [V]
2. Current consumption
2. 1 IOPE vs. Ta
VDD = 9.9 V
2. 2 IPDN vs. Ta
VDD = 6.0 V
Ta [°C]
2.0
0
0.5
1.0
1.5
−40 0 25 50−25 8575
IOPE [μA]
Ta [°C]
0.3
0
−40 0 25 50−25 8575
IPDN [μA]
0.2
0.1
2. 3 IOPE vs. VDD
Ta = +25°C
60
0
I
OPE
[μA]
40
20
030
5 10152025
V
DD
[V]
BATTERY PROTECTION IC FOR 2-SERIAL / 3-SERIAL CELL PACK
(SECONDARY PROTECTION)
S-8213 Series Rev.1.1_00
Seiko Instruments Inc.
16
3. Delay time
3. 1 tCU vs. Ta
VDD = 12 V
Ta [°C]
3.0
1.0
1.5
2.0
2.5
−40 0 25 50−25 8575
tCU [s]
4. Output current
4. 1 ICOL vs. VDD
Ta = +25°C
4. 2 ICOH vs. VDD
Ta = +25°C
2.0
0
I
COL
[mA]
030
5 10152025
V
DD
[V]
0.5
1.0
1.5
100
0
I
COH
[μA]
030
5 10152025
V
DD
[V]
25
50
75
BATTERY PROTECTION IC FOR 2-SERIAL / 3-SERIAL CELL PACK
(SECONDARY PROTECTION)
Rev.1.1_00 S-8213 Series
Seiko Instruments Inc. 17
Marking Specification
1. SNT-6A
(1) to (3): Product code (Refer to Product name vs. Product code)
(4) to (6): Lot number
1
3
6
4
25
Top view
(1) (2) (3)
(4) (5) (6)
Product name vs. Product code
Product Code
Product Name (1) (2) (3)
S-8213AAB-I6T1U S U B
S-8213AAC-I6T1U S U C
S-8213AAD-I6T1U S U D
S-8213AAE-I6T1U S U E
S-8213AAF-I6T1U S U F
S-8213AAG-I6T1U S U G
S-8213AAH-I6T1U S U H
S-8213AAI-I6T1U S U I
S-8213AAJ-I6T1U S U J
S-8213AAK-I6T1U S U K
S-8213AAL-I6T1U S U L
S-8213AAM-I6T1U S U M
S-8213AAN-I6T1U S U N
S-8213AAO-I6T1U S U O
S-8213AAP-I6T1U S U P
2.9±0.2
0.15
1.9±0.2
123
4
65
0.35±0.15
0.95
+0.1
-0.05
0.95
No.
TITLE
SCALE
UNIT mm
Seiko Instruments Inc.
No. MP006-A-P-SD-2.0
MP006-A-P-SD-2.0
SOT236-A-PKG Dimensions
No.
TITLE
SCALE
UNIT mm
123
45
6
ø1.5 +0.1
-0 2.0±0.05
ø1.0 +0.2
-0 4.0±0.1
1.4±0.2
0.25±0.1
3.2±0.2
Seiko Instruments Inc.
No. MP006-A-C-SD-3.1
MP006-A-C-SD-3.1
SOT236-A-Carrier Tape
Feed direction
4.0±0.1(10 pitches:40.0±0.2)
No.
TITLE
SCALE
UNIT mm
12.5max.
9.0±0.3
ø13±0.2
(60°) (60°)
QTY 3,000
Seiko Instruments Inc.
Enlarged drawing in the central part
No. MP006-A-R-SD-2.1
MP006-A-R-SD-2.1
SOT236-A-Reel
No.
TITLE
SCALE
UNIT mm
Seiko Instruments Inc.
SNT-6A-A-PKG Dimensions
PG006-A-P-SD-2.0
No. PG006-A-P-SD-2.0
0.2±0.05
0.48±0.02
0.08 +0.05
-0.02
0.5
1.57±0.03
123
45
6
Feed direction
4.0±0.1
2.0±0.05
4.0±0.1
ø1.5 +0.1
-0
ø0.5
1.85±0.05 0.65±0.05
0.25±0.05
5°
No.
TITLE
SCALE
UNIT mm
Seiko Instruments Inc.
PG006-A-C-SD-1.0
SNT-6A-A-Carrier Tape
No. PG006-A-C-SD-1.0
+0.1
-0
1
2
4
3
56
12.5max.
9.0±0.3
ø13±0.2
(60°) (60°)
QTY.
No. PG006-A-R-SD-1.0
PG006-A-R-SD-1.0
Enlarged drawing in the central part
No.
TITLE
SCALE
UNIT mm
Seiko Instruments Inc.
SNT-6A-A-Reel
5,000
No.
TITLE
SCALE
UNIT mm
SNT-6A-A-Land Recommendation
Seiko Instruments Inc.
PG006-A-L-SD-4.0
No. PG006-A-L-SD-4.0
0.3
0.2
0.52
1.36
0.52
1
2
Caution 1. Do not do silkscreen printing and solder printing under the mold resin of the package.
2. The thickness of the solder resist on the wire pattern under the package should be 0.03 mm
or less from the land pattern surface.
3. Match the mask aperture size and aperture position with the land pattern.
4. Refer to "SNT Package User's Guide" for details.
1. (0.25 mm min. / 0.30 mm typ.)
2. (1.30 mm ~ 1.40 mm)
0.03 mm
SNT
1. Pay attention to the land pattern width (0.25 mm min. / 0.30 mm typ.).
2. Do not widen the land pattern to the center of the package ( 1.30 mm ~ 1.40 mm ).
1.
2.
※1. 䇋⊼ᛣ⛞Ⲭᓣⱘᆑᑺ(0.25 mm min. / 0.30 mm typ.)DŽ
※2. 䇋࣓ᇕ㺙Ё䯈ᠽሩ⛞Ⲭᓣ (1.30 mm ~ 1.40 mm)DŽ
⊼ᛣ1. 䇋࣓㛖ൟᇕ㺙ⱘϟ䴶ࠋϱ㔥ǃ⛞䫵DŽ
2. ᇕ㺙ϟǃᏗ㒓Ϟⱘ䰏⛞㝰ᑺ (Ң⛞Ⲭᓣ㸼䴶䍋) 䇋ࠊ0.03 mmҹϟDŽ
3. 㝰ⱘᓔষሎᇌᓔষԡ㕂䇋Ϣ⛞Ⲭᓣᇍ唤DŽ
4. 䆺㒚ݙᆍ䇋খ䯙 "SNTᇕ㺙ⱘᑨ⫼ᣛ"DŽ
www.sii-ic.com
• The information described herein is subject to change without notice.
• Seiko Instruments Inc. is not responsible for any problems caused by circuits or diagrams described herein
whose related industrial properties, patents, or other rights belong to third parties. The application circuit
examples explain typical applications of the products, and do not guarantee the success of any specific
mass-production design.
• When the products described herein are regulated products subject to the Wassenaar Arrangement or other
agreements, they may not be exported without authorization from the appropriate governmental authority.
• Use of the information described herein for other purposes and/or reproduction or copying without the
express permission of Seiko Instruments Inc. is strictly prohibited.
• The products described herein cannot be used as part of any device or equipment affecting the human
body, such as exercise equipment, medical equipment, security systems, gas equipment, vehicle equipment,
in-vehicle equipment, aviation equipment, aerospace equipment, and nuclear-related equipment, without prior
written permission of Seiko Instruments Inc.
• The products described herein are not designed to be radiation-proof.
• Although Seiko Instruments Inc. exerts the greatest possible effort to ensure high quality and reliability, the
failure or malfunction of semiconductor products may occur. The user of these products should therefore
give thorough consideration to safety design, including redundancy, fire-prevention measures, and
malfunction prevention, to prevent any accidents, fires, or community damage that may ensue.
