© Semiconductor Components Industries, LLC, 2009
August, 2009 Rev. 5
1Publication Order Number:
BCW65ALT1/D
BCW65ALT1G,
BCW65CLT1G
General Purpose Transistor
NPN Silicon
Features
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector Emitter Voltage VCEO 32 Vdc
Collector Base Voltage VCBO 60 Vdc
Emitter Base Voltage VEBO 5.0 Vdc
Collector Current Continuous IC800 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR5 Board
(Note 1), TA = 25°C
Derate above 25°C
PD225
1.8
mW
mW/°C
Thermal Resistance,
JunctiontoAmbient RqJA 556 °C/W
Total Device Dissipation Alumina
Substrate, (Note 2) TA = 25°C
Derate above 25°C
PD
300
2.4
mW
mW/°C
Thermal Resistance,
JunctiontoAmbient RqJA 417 °C/W
Junction and Storage Temperature TJ, Tstg 55 to +150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in 99.5% alumina.
SOT23
CASE 318
STYLE 6
http://onsemi.com
Ex = Device Code
x = A or C
M = Date Code*
G=PbFree Package
MARKING DIAGRAMS
1
2
3
Device Package Shipping
ORDERING INFORMATION
BCW65ALT1G SOT23
(PbFree)
3000/Tape & Reel
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Ex M G
G
COLLECTOR
3
1
BASE
2
EMITTER
BCW65CLT1G SOT23
(PbFree)
3000/Tape & Reel
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
BCW65ALT1G, BCW65CLT1G
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage
(IC = 10 mAdc, IB = 0)
V(BR)CEO 32 Vdc
Collector Emitter Breakdown Voltage
(IC = 10 mAdc, VEB = 0)
V(BR)CES 60 Vdc
EmitterBase Breakdown Voltage
(IE = 10 mAdc, IC = 0)
V(BR)EBO 5.0 Vdc
Collector Cutoff Current
(VCE = 32 Vdc, IE = 0)
(VCE = 32 Vdc, IE = 0, TA = 150°C)
ICES
20
20
nAdc
mAdc
Emitter Cutoff Current
(VEB = 4.0 Vdc, IC = 0)
IEBO 20 nAdc
ON CHARACTERISTICS
DC Current Gain BCW65ALT1
(IC = 100 mAdc, VCE = 10 Vdc)
(IC = 10 mAdc, VCE = 1.0 Vdc)
(IC = 100 mAdc, VCE = 1.0 Vdc)
(IC = 500 mAdc, VCE = 2.0 Vdc)
hFE
35
75
100
35
250
DC Current Gain BCW65CLT1
(IC = 100 mAdc, VCE = 10 Vdc)
(IC = 10 mAdc, VCE = 1.0 Vdc)
(IC = 100 mAdc, VCE = 1.0 Vdc)
(IC = 500 mAdc, VCE = 2.0 Vdc)
hFE
80
180
250
100
630
Collector Emitter Saturation Voltage
(IC = 500 mAdc, IB = 50 mAdc)
(IC = 100 mAdc, IB = 10 mAdc)
VCE(sat)
0.7
0.3
Vdc
Base Emitter Saturation Voltage
(IC = 500 mAdc, IB = 50 mAdc)
VBE(sat)
2.0
Vdc
SMALLSIGNAL CHARACTERISTICS
CurrentGain — Bandwidth Product
(IC = 20 mAdc, VCE = 10 Vdc, f = 100 MHz)
fT100 MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Cobo 12 pF
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Cibo 80 pF
Noise Figure
(VCE = 5.0 Vdc, IC = 0.2 mAdc, RS = 1.0 kW, f = 1.0 kHz, BW = 200 Hz)
NF 10 dB
SWITCHING CHARACTERISTICS
TurnOn Time
(IB1 = IB2 = 15 mAdc)
ton 100 ns
TurnOff Time
(IC = 150 mAdc, RL = 150 W)
toff 400 ns
BCW65ALT1G, BCW65CLT1G
http://onsemi.com
3
PACKAGE DIMENSIONS
SOT23 (TO236)
CASE 31808
ISSUE AN
D
A1
3
12
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. 31801 THRU 07 AND 09 OBSOLETE, NEW
STANDARD 31808.
ǒmm
inchesǓ
SCALE 10:1
0.8
0.031
0.9
0.035
0.95
0.037
0.95
0.037
2.0
0.079
VIEW C
L
0.25
L1
q
e
EE
b
A
SEE VIEW C
DIM
A
MIN NOM MAX MIN
MILLIMETERS
0.89 1.00 1.11 0.035
INCHES
A1 0.01 0.06 0.10 0.001
b0.37 0.44 0.50 0.015
c0.09 0.13 0.18 0.003
D2.80 2.90 3.04 0.110
E1.20 1.30 1.40 0.047
e1.78 1.90 2.04 0.070
L0.10 0.20 0.30 0.004
0.040 0.044
0.002 0.004
0.018 0.020
0.005 0.007
0.114 0.120
0.051 0.055
0.075 0.081
0.008 0.012
NOM MAX
L1
H
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
2.10 2.40 2.64 0.083 0.094 0.104
HE
0.35 0.54 0.69 0.014 0.021 0.029
c
*For additional information on our PbFree strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
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BCW65ALT1/D
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