1. COLLECTOR
2. BASE
3. EMITTER
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage VCBO -40 V
Collector-Emitter Voltage VCEO -30 V
Emitter-Base Voltage VEBO -10 V
Collector Current IC-500 mA
Collector Power Dissipation PC625 mW
Junction Temperature Tj150
Storage Temperature Tstg -55 150
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector-Base Breakdown Voltage V(BR)CBO IC=-0.1mA, IE=0 -40 -- V
Collector-Emitter Breakdown Voltage V(BR)CEO IC=-10mA, IB=0 -30 - - V
Emitter-Base Breakdown Voltage V(BR)EBO IE=-1.0mA, IC=0 -10 - - V
Collector Cut-off Current ICBO VCB=-40V, IE=0 - - -1.0 A
Emitter Cut-off Current IEBO VEB=-10V, IC=0 - - -1.0 A
DC Current Gain hFE IC=-100mA, VCE=-2V 30k - -
Collector-Emitter Saturation Voltage VCE(sat) IC=-100mA, IB=-1mA - - -1.0 V
Base-Emitter Saturation Voltage VBE(sat) IC=-100mA, IB=-1mA - -1.5 -2.0 V
Current Gain Bandwidth Product fTIC=-100mA, VCE=-2V, f=100MHz - 220 - MHz
Collector Output Capacitance Cob VCB=-10V, f=1MHz, IE=0 - 5.0 - pF