MOTOROLA
SEMICONDUCTOR TECHNICAL DATA Order this document
by PBF259RStD
High Voltage
@NPN Silicon Wansistors
PBF259RS
COLLECTOR
1
2
@
BASE
3
EMl~ER
M~lMUM RATINGS
IRating ISymbol IValue IUnit I
ICollector-Emitier ”oltage Iv~~~ I300 IVdc I:\.>,.
I\~,;~.
Collector–Base Voltage ITO-92 (TO-226AA)
VCBO 300 Vdc .J!j$,::,,.:,\:\:,,.
.. .$~.
Emitter-Base Voltage VEBO 5.0 Vdq:; “~~ “’” I
Collector Current —Continuous Ic 500 &F
Total Device Dissipation @TA =25°C pD 625 ,$ ~:x mti
Derate above 25°C 5.0 *\*:h*;. ,tww/oc
Total Device Dissipation @Tc =25°C PD 1.%ti>*.;f Watts
Derate above 25°C ,:$g~$ mW/OC
.,,
Operating and Storage Junction TJ, Tstg *-59.to +150 ‘c
Temperature Range ,>+.}:>~.
>::*A
,, .
r.
THERMAL CHARACTERISTICS ,,,,
~,,!~’%i
.t’ir.~..*,..;,\.,
Thermal Resistance, Junction to Casa~ “’\, >“ROJC 83.3 I‘cm I
.~-..,
ELECTRICAL CHARACTERIS$lC$”~~ =25°C unless othemise noted)
.,>i, .,!
Coiiector-Emitter ~~~kdo$fi Voltage (1) V(BR)CEO 300 —Vdc
(1c =3.0 mAd~~&f,,~
Collector- B~~+kdown Voltage V(BR)CBO 300 —Vdc
(1c =:.$’@~?~E =O)
Emi@~-~& Breakdown Voltage V(BR)EBO so —Vdc
,,@~~~:{j@ wAdc, IC =0)
,/~$f$&orCutoff Current
,F@CB =250 Vdc, IE =O)
ICBO —50 nAdc
‘$Emitter Cutoff Current lEBO —20 nAdc
(VEB =3.0 Vdc)
Collector Cutoff Current ICEO —50 nAdc
(VCE =10 Vdc)
@MOTOROLA
@Motorola, Inc. 1997
PBF259RS
ELECTRICAL CHARACTERISTICS (TA =25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS(1)
DC Current Gain(l )hFE
(1c=20 mAdc, VCE =10 Vdc)
(1c=1.0 mAdc, VCE =10 Vdc)
(1c=30 mAdc, VCE =10 Vdc)
Collector–Emifler Saturation Voltage VCE(sat)
([c =30 mAdc, IB =1.5 mAdc)
(1c=30 mAdc, IB =60 mAdc
Base– Emitier Saturation Voltage IVBE(sat)
([c =20 mAdc, IB =2.0 mAdc)
60 —
25 —
25 —
-I0.5 1
—e
2Motorola Small–Signal Transistors, FETs and Diodes Device Data
PBF259RS
Figure 4. “On” Voltages
-P :1,0 -2,0 -5.0 -10 -20 -50 -100
Ic, COLLECTOR CURRENT (mA)
Figure 3. Current-Gain —Bandwidth Product
“.” -3.0 -5.0 -lo -20 -30 -50 -100 -200-300
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 5. Active Region —Safe Operating Area
Motorola Small–Signal Transistors, FETs an! Diodes Device Data 3
PACWGE DIMENSIONS
NOTES
B
SEATIN
PLANE
2.
3.
4
SECTION X-X
DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982,
CONTROLLING DIMENSION INCH
CONTOUR OF PACWGE BEYOND DIMENSION R
[S UNCONTROLLED,
OIMENSION FAPPLIES BETWEEN PANO L.
DIMENSION OANO JAPPLY B~EEN LAND K
MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN PAND BEYONOOIMENSION KMINIMUM. .
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